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Part : EEEHA0J470WR Supplier : Panasonic Electronic Components Manufacturer : Schukat electronic Stock : 2,000 Best Price : €0.0534 Price Each : €0.0728
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Part : EEE-HA0J101P Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 6,000 Best Price : $0.0640 Price Each : $0.0870
Part : EEE-HA0J101WR Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 25,000 Best Price : $0.0590 Price Each : $0.08
Part : EEE-HA0J102AP Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 1,000 Best Price : $0.1650 Price Each : $0.1930
Part : EEE-HA0J102P Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 1,000 Best Price : $0.1450 Price Each : $0.1690
Part : EEE-HA0J102UP Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 3,000 Best Price : $0.1240 Price Each : $0.1450
Part : EEE-HA0J152P Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 3,000 Best Price : $0.1590 Price Each : $0.1860
Part : EEE-HA0J102UP Supplier : Panasonic Electronic Components Manufacturer : New Advantage Stock : 500 Best Price : $0.26 Price Each : $0.26
Part : EEE-HA0J221WP Supplier : Panasonic Electronic Components Manufacturer : New Advantage Stock : 2,000 Best Price : $0.1512 Price Each : $0.1512
Part : EHA.0B.304.CLN Supplier : LEMO Manufacturer : Sager Stock : - Best Price : - Price Each : -
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EHA07183

Catalog Datasheet MFG & Type PDF Document Tags

BCR158W

Abstract: VSO05561 BCR158W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=2.2k , R2=47k ) driver circuit 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR158W WIs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5
Infineon Technologies
Original

BCR183

Abstract: BCR183 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=10k , R2 =10k ) driver circuit 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR183 WMs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10
Infineon Technologies
Original

BCR196W

Abstract: VSO05561 BCR196W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=47k , R 2=22k ) driver circuit 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR196W WXs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10
Infineon Technologies
Original

158T

Abstract: SC-75 BCR 158T PNP Silicon Digital Transistor 3 · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=2.2k, R2=47k) 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type Marking BCR 158T WIs Pin Configuration 1=B 2=E Package 3=C SC-75 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5
Infineon Technologies
Original
158T

PIN CONFIGURATION IC 555

Abstract: IC 555 BCR 555 PNP Silicon Digital Transistor 3 · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=2.2k, R2=10k) 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 555 XDs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5
Infineon Technologies
Original
PIN CONFIGURATION IC 555 IC 555 Ic digital 555 14 pin ic 555 xds pnp

BCR191

Abstract: BCR191 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=22k , R 2=22k ) driver circuit 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR191 WOs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10
Infineon Technologies
Original

BCR192

Abstract: BCR192 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=22k , R 2=47k ) driver circuit 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR192 WPs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10
Infineon Technologies
Original

BCR571

Abstract: BCR571 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=1k , R2=1k ) driver circuit 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR571 XXs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5
Infineon Technologies
Original

VSO05561

Abstract: BCR 192W PNP Silicon Digital Transistor 3 · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=22k, R 2=47k) 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 192W WPs Pin Configuration 1=B 2=E Package 3=C SOT-323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10
Infineon Technologies
Original

BCR198

Abstract: MARKING WRS BCR198 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k , R 2=47k ) 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR198 WRs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO
Infineon Technologies
Original
MARKING WRS

BCR162

Abstract: BCR162 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=4.7k , R2=4.7k ) driver circuit 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10
Infineon Technologies
Original

BCR573

Abstract: BCR573 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=1k , R2=10k ) driver circuit 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR573 XHs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5
Infineon Technologies
Original
Abstract: BCR 183 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=10k , R2 =10k ) 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 183 WMs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO Infineon Technologies
Original

ic 192 d

Abstract: 1B SOT 23 BCR 192 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k , R 2=47k ) 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 192 WPs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO
Infineon Technologies
Original
ic 192 d 1B SOT 23

BCR158

Abstract: BCR158 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=2.2k , R2=47k ) driver circuit 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR158 WIs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5
Infineon Technologies
Original

BCR185

Abstract: wns marking BCR185 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=10k , R 2=47k ) 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR185 WNs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 6
Infineon Technologies
Original
wns marking DSA0011196

BCR196W

Abstract: VSO05561 BCR196W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k , R 2=22k ) 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR196W WXs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10
Infineon Technologies
Original

BCR183T

Abstract: SC75 BCR183T PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=10k , R2 =10k ) 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type Marking BCR183T WMs Pin Configuration 1=B 2=E Package 3=C SC75 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO
Infineon Technologies
Original
SC75

562 sot23

Abstract: BCR 562 PNP Silicon Digital Transistor 3 · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=4.7k, R2=4.7k) 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 562 XUs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10
Infineon Technologies
Original
562 sot23
Abstract: BCR 573 PNP Silicon Digital Transistor 3 · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=1k, R2=10k) 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 573 XHs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Infineon Technologies
Original
Abstract: BCR553 PNP Silicon Digital Transistor · Built in bias resistor (R1= 2.2 k, R2= 2.2 k) · Pb-free (RoHS compliant) package · Qualified according AEC Q101 3 1 2 C 3 R1 R2 1 B 2 E EHA07183 Type BCR553 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationTS 79 °C Junction temperature Storage temperature Thermal Resistance Parameter Marking XBs Pin Configuration 1=B 2 Infineon Technologies
Original
Abstract: BCR553 PNP Silicon Digital Transistor â'¢ Built in bias resistor (R1= 2.2 kâ"¦, R2= 2.2 kâ"¦) 2 3 â'¢ Pb-free (RoHS compliant) package 1 â'¢ Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR553 Marking XBs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 20 Input reverse voltage Vi(rev Infineon Technologies
Original
AN077
Abstract: BCR573 PNP Silicon Digital Transistor â'¢ Built in bias resistor (R1= 1 kâ"¦, R2= 10 kâ"¦) 2 3 â'¢ Pb-free (RoHS compliant) package 1 â'¢ Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR573 Marking XHs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 12 Input reverse voltage Vi(rev Infineon Technologies
Original
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