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EGP10F-E3/73 Vishay Semiconductors ULTRA FAST RECOVERY RECTFR 300V 1A 2PIN DO-204AL AMMO - Ammo Pack visit Digikey Buy
EGP10F-E3/54 Vishay Semiconductors ULTRA FAST RECOVERY RECTFR 300V 1A 2PIN DO-204AL - Tape and Reel visit Digikey Buy
EGP10F-M3/54 Vishay Semiconductors DIODE SIGNAL DIODE, Signal Diode visit Digikey Buy
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Part : EGP10F Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0629 Price Each : $0.0669
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EGP10F Datasheet

Part Manufacturer Description PDF Type
EGP10F Fagor 300 V, 1 A glass passivated avalanche ultrafast recovery rectifier Original
EGP10F Fairchild Semiconductor 1.0A Ultra Fast Recovery Rectifier Original
EGP10F Fairchild Semiconductor Fast Rectifier (Glass Passivated) Original
EGP10F Fairchild Semiconductor 1.0 Ampere Glass Passivated High Efficiency Rectifiers Original
EGP10F Fairchild Semiconductor 1.0A Ultra Fast Recovery Rectifier; Package: DO-41; No of Pins: 2; Container: Tape & Reel Original
EGP10F General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original
EGP10F General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original
EGP10F Micro Commercial Components 1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts Original
EGP10F Taiwan Semiconductor 1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers Original
EGP10F Zowie Technology SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Original
EGP10F N/A Shortform Data and Cross References (Misc Datasheets) Scan
EGP10F-E3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 300V 1A DO204AL Original
EGP10F-E3/73 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 300V 1A DO204AL Original
EGP10FHE3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 300V 1A DO204AL Original
EGP10FHE3/73 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 300V 1A DO204AL Original
EGP10FHM3/54 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 300V 50NS DO-41 Original
EGP10FHM3/73 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 300V 50NS DO-41 Original
EGP10F-M3/54 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 300V 50NS DO-41 Original
EGP10F-M3/73 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 300V 50NS DO-41 Original
EGP10F-TP Micro Commercial Components Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 300V 1A DO41 Original

EGP10F

Catalog Datasheet MFG & Type PDF Document Tags

EGP10J

Abstract: Forward Voltage EGP10A-10D EGP10F-10G EGP10J -10K Maximum DC Reverse Current At Rated DC Blocking , -10D EGP10F-10K Revision: 3 IF(AV) 1.0 A IFSM 30A 8.3ms, half sine VF 0.95V 1.25V , 0 50 75 EGP10A -EGP10D EGP10F-EGP10K 100 .4 .6 .8 1.0 150 175 C , : 50OC/W Junction to Ambient MCC Part Number EGP10A EGP10B EGP10D EGP10F EGP10G EGP10J EGP10K , -EGP10D EGP10F - EGP10K 2 1 .1 .2 .4 1 2 4 10 Volts 20 40 100 200 400
Micro Commercial Components
Original
DO-41 EGP10A-10G EGP10J-10K 125OC 150OC

egp10b

Abstract: EGP10A EGP10C EGP10D EGP10F EGP10G UNIT Maximum repetitive peak reverse voltage VRRM 50 100 , EGP10C EGP10D EGP10F EGP10G UNIT Maximum instantaneous forward voltage at 1.0 A VF , ) EGP10A EGP10B EGP10C RJA EGP10D EGP10F EGP10G 50 UNIT °C/W Note: (1) Thermal , EGP10F ­ EGP10G 0.01 0.2 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 60 Junction Capacitance (pF) Instantaneous Forward Current (A) 50 EGP10A ­ EGP10D EGP10F ­ EGP10G 0 0.4 0.6 0.8 1.0
Vishay Semiconductors
Original
DO-204AL J-STD-002B JESD22-B102D 2002/95/EC 2002/96/EC
Abstract: Voltage EGP10A-10D EGP10F-10G EGP10J -10K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time EGP10A-10G EGP10J-10K Typical Junction Capacitance EGP10A-10D EGP10F-10K IF(AV) IFSM , .06 .04 EGP10A -EGP10D EGP10F-EGP10K MCC Micro Commercial Components Figure 2 Forward Derating , 800 Volts DO-41 MCC Part Number EGP10A EGP10B EGP10D EGP10F EGP10G EGP10J EGP10K Maximum RMS , pF 10 6 4 2 1 .1 .2 .4 1 2 4 10 Volts 20 40 100 200 400 1000 EGP10A -EGP10D EGP10F - EGP10K TJ Micro Commercial Components
Original
Abstract: Forward Voltage EGP10A-10D EGP10F-10G EGP10J-10K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time EGP10A-10G EGP10J-10K Typical Junction Capacitance EGP10A-10D EGP10F-10K IF , 1 .6 .4 .2 .1 .06 .04 EGP10A -EGP10D EGP10F-EGP10K MCC Micro Commercial Components Figure 2 , 200V 300V 400V 600V 800V O MCC Part Number EGP10A EGP10B EGP10D EGP10F EGP10G EGP10J EGP10K , 20 pF 10 6 4 2 1 .1 .2 .4 1 2 4 10 Volts 20 40 100 200 400 1000 EGP10A -EGP10D EGP10F - EGP10K TJ Micro Commercial Components
Original
Abstract: EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor , 25 °C unless otherwise noted) PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F , ?91000 EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor , EGP10A EGP10B VF EGP10C EGP10D EGP10F 0.95 EGP10G 1.25 TA = 25 °C UNIT V , EGP10B EGP10C RJA (1) Typical thermal resistance EGP10D EGP10F EGP10G 50 UNIT Vishay General Semiconductor
Original
22-B106 AEC-Q101 J-STD-002 22-B102 2011/65/EU JS709A
Abstract: EGP10F EGP10G UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 , EGP10B VF EGP10C EGP10F 0.95 EGP10G 1.25 TA = 25 °C Maximum DC reverse current , (1) EGP10D EGP10F EGP10G 50 UNIT °C/W Note (1) Thermal resistance from junction , 0.1 50 40 30 20 10 EGP10A thru EGP10D EGP10F and EGP10G 0.01 0.2 TJ = 25 °C f = 1.0 , EGP10A thru EGP10D EGP10F and EGP10G 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 Vishay Semiconductors
Original

EGP10G

Abstract: DO-204AL EGP10B EGP10C EGP10D EGP10F EGP10G Parameter Unit Maximum repetitive peak reverse voltage , 25°C ambient temperature unless otherwise specified. Symbol EGP10A EGP10B EGP10C EGP10D EGP10F , TJ = 150°C 1 TJ = 25°C 0.1 EGP10A ­ EGP10D EGP10F ­ EGP10G 0.01 0.2 TJ = 150°C 10 , Peak Reverse Voltage (%) 50 40 30 20 10 0 0.1 EGP10A ­ EGP10D EGP10F ­ EGP10G 1 10
Vishay Semiconductors
Original
MIL-STD750

EGP10G

Abstract: DO-204AL otherwise specified. Symbol EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Parameter Unit Maximum , EGP10D EGP10F EGP10G Parameter Maximum instantaneous forward voltage at 1.0A 0.95 1.25 V , TJ = 150°C 1 TJ = 25°C 0.1 EGP10A ­ EGP10D EGP10F ­ EGP10G 0.01 0.2 TJ = 150°C 10 , Capacitance (pF) 100 50 40 30 20 10 0 0.1 EGP10A ­ EGP10D EGP10F ­ EGP10G 1 10 Reverse
General Semiconductor
Original

DO-204AL

Abstract: EGP10A unless otherwise noted) PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G , forward voltage SYMBOL 1.0 A EGP10A EGP10B VF EGP10C EGP10F 0.95 EGP10G 1.25 , EGP10A EGP10B EGP10C (1) EGP10D EGP10F EGP10G 50 UNIT °C/W Note (1) Thermal , EGP10F and EGP10G 0.01 0.2 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 60 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 EGP10A thru EGP10D EGP10F and EGP10G 0 0.4
Vishay Semiconductors
Original

EGP10G

Abstract: EGP10B EGP10A 50 35 50 EGP10B 100 70 100 EGP10C EGP10D EGP10F EGP10G 150 105 150 1.0 30 - 65 to + 150 200 140 , 5.0 100 50 22 15 EGP10D EGP10F EGP10G UNIT V 1.25 IR µA trr CJ ns pF THERMAL , SYMBOL RJA EGP10A EGP10B EGP10C 50 EGP10D EGP10F EGP10G UNIT °C/W ORDERING INFORMATION PREFERRED P/N , EGP10F ­ EGP10G 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 EGP10A ­ EGP10D EGP10F ­ EGP10G 0.1 1 10 100
Vishay Semiconductors
Original
Abstract: Voltage EGP10A-10D EGP10F-10G EGP10J -10K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time EGP10A-10G EGP10J-10K Typical Junction Capacitance EGP10A-10D EGP10F-10K IF(AV) IFSM , EGP10A -EGP10D EGP10F-EGP10K MCC Micro Commercial Components Figure 2 Forward Derating Curve 1.2 1.0 , 800 Volts DO-41 MCC Part Number EGP10A EGP10B EGP10D EGP10F EGP10G EGP10J EGP10K Maximum RMS , 10 Volts 20 40 100 200 400 1000 EGP10A -EGP10D EGP10F - EGP10K TJ =25OC Junction Capacitance - Micro Commercial Components
Original

High Efficient Rectifiers

Abstract: Voltage EGP10A-10D EGP10F-10G EGP10J-10K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time EGP10A-10G EGP10J-10K Typical Junction Capacitance EGP10A-10D EGP10F-10K IF(AV) 1.0 , 2 Amps 1 .6 .4 .2 .1 .06 .04 EGP10A -EGP10D EGP10F-EGP10K Micro Commercial Components MCC , Voltage EGP10A EGP10B EGP10D EGP10F EGP10G EGP10J EGP10K 35V 70V 140V 210V 280V 420V 560V 50V , Capacitance 100 60 40 20 pF 10 6 4 2 1 .1 .2 .4 1 2 4 10 Volts 20 40 100 200 400 1000 EGP10A -EGP10D EGP10F -
Micro Commercial Components
Original
High Efficient Rectifiers
Abstract: Instantaneous Forward Voltage EGP10A-10D EGP10F-10G EGP10J-10K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time EGP10A-10G EGP10J-10K Typical Junction Capacitance EGP10A-10D EGP10F-10K , 1 .6 .4 .2 .1 .06 .04 EGP10A -EGP10D EGP10F-EGP10K MCC Micro Commercial Components Figure 2 , 100V 200V 300V 400V 600V 800V O O O MCC Part Number EGP10A EGP10B EGP10D EGP10F EGP10G EGP10J , 20 pF 10 6 4 2 1 .1 .2 .4 1 2 4 10 Volts 20 40 100 200 400 1000 EGP10A -EGP10D EGP10F - EGP10K TJ Micro Commercial Components
Original

EGP10G

Abstract: EGP10B storage temperature range Symbol VRRM VRMS VDC IF(AV) IFSM TJ,TSTG EGP10A EGP10B EGP10C EGP10D EGP10F , EGP10F EGP10G Unit V µA 1.25 trr CJ ns pF Thermal Characteristics TA = 25 °C unless otherwise , EGP10B EGP10C 50 EGP10D EGP10F EGP10G Unit °C/W Ratings and Characteristics Curves (TA = , (pF) 50 40 30 20 10 0 1 TJ = 25 °C 0.1 EGP10A ­ EGP10D EGP10F ­ EGP10G 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 EGP10A ­ EGP10D EGP10F ­ EGP10G 0.1 1 10 100 Instantaneous Forward Voltage
Vishay General Semiconductor
Original
UL-94V-0

EGP10G

Abstract: DO-204AL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Parameter Unit Maximum repetitive peak reverse voltage , 25°C ambient temperature unless otherwise specified. Symbol EGP10A EGP10B EGP10C EGP10D EGP10F , TJ = 150°C 1 TJ = 25°C 0.1 EGP10A ­ EGP10D EGP10F ­ EGP10G 0.01 0.2 TJ = 150°C 10 , Peak Reverse Voltage (%) 50 40 30 20 10 0 0.1 EGP10A ­ EGP10D EGP10F ­ EGP10G 1 10
Vishay Semiconductors
Original

EGP10G

Abstract: EGP10B SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT Maximum repetitive peak , forward voltage SYMBOL 1.0 A EGP10A EGP10B VF EGP10C EGP10F 0.95 EGP10G 1.25 , EGP10A EGP10B EGP10C (1) EGP10D EGP10F EGP10G 50 UNIT °C/W Note (1) Thermal , 30 20 10 EGP10A thru EGP10D EGP10F and EGP10G 0.01 0.2 TJ = 25 °C f = 1.0 MHz Vsig = 50 , EGP10D EGP10F and EGP10G 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10
Vishay Semiconductors
Original

EGP10G

Abstract: DO-204AL PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT Maximum , EGP10D 0.95 EGP10F EGP10G 1.25 UNIT V TA = 25 °C TA = 125 °C IR 5.0 100 µA , RJA EGP10D EGP10F EGP10G 50 UNIT °C/W Note: (1) Thermal resistance from junction , 25 °C 0.1 50 40 30 20 10 EGP10A - EGP10D EGP10F - EGP10G 0.01 0.2 TJ = 25 °C f = , ) 100 EGP10A - EGP10D EGP10F - EGP10G 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Vishay Semiconductors
Original
JESD22-B102
Abstract: Current Maximum Instantaneous Forward Voltage EGP10A-10D EGP10F-10G EGP10J-10K Maximum DC Reverse , Junction Capacitance EGP10A-10D EGP10F-10K Revision: 7 D IF(AV) 1.0 A TA = 55OC IFSM , Load 0.375â'(9.5mm) Lead Length .06 0 .04 0 50 75 EGP10A -EGP10D EGP10F-EGP10K , EGP10F EGP10G EGP10J EGP10K Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 300V 400V , =25OC 60 40 20 pF 10 6 4 EGP10A -EGP10D EGP10F - EGP10K 2 1 .1 .2 .4 1 2 Micro Commercial Components
Original

HER307g

Abstract: EGP10A Surge Current Maximum Instantaneous Forward Voltage EGP10A-10D EGP10F-10G EGP10J-10K Maximum DC , -10K Typical Junction Capacitance EGP10A-10D EGP10F-10K Revision: 7 IF(AV) 1.0 A IFSM 30A , EGP10F-EGP10K 100 .4 .6 .8 1.0 150 175 C .02 .01 125 O 1.2 Average , EGP10D HER103G EGP10F HER104G EGP10G HER105G EGP10J HER106G EGP10K HER107G , EGP10B EGP10D EGP10F EGP10G EGP10J EGP10K Maximum Recurrent Peak Reverse Voltage 50V 100V
Micro Commercial Components
Original
EGP20A EGP20B EGP20D EGP20F HER307g HER101G HER102G HER201G HER202G

EGP10G

Abstract: EGP10B storage temperature range Symbol VRRM VRMS VDC IF(AV) IFSM TJ,TSTG EGP10A EGP10B EGP10C EGP10D EGP10F , = 0.25 A at 4.0 V, 1 MHz Symbol EGP10A EGP10B EGP10C EGP10D VF IR 0.95 5.0 100 50 22 15 EGP10F , EGP10B EGP10C 50 EGP10D EGP10F EGP10G Unit °C/W Ratings and Characteristics Curves (TA = , 30 20 10 0 0.1 1 TJ = 25°C 0.1 EGP10A ­ EGP10D EGP10F ­ EGP10G 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 EGP10A ­ EGP10D EGP10F ­ EGP10G 1 10 100 Instantaneous Forward Voltage (V
Vishay Semiconductors
Original

diode EGP 30

Abstract: egp 100 EGP10A - EGP10D EGP10F & EGP10G 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 20 , 70 TJ=25°C f=1.0 MHZ Vsig=50mVp-p 60 50 40 30 20 10 0 0.1 EGP10A - EGP10D EGP10F &
General Semiconductor
Original
diode EGP 30 egp 100 MIL-STD-750

EGP10A

Abstract: egp 100 ) IF(A) 10mm EGP10A thru EGP10D 2 EGP10F, EGP10G 1 0.2 Tj = 25 °C 0.1 0.01
SIYU
Original

EGP10G

Abstract: EGP10A EGP10B 100 70 100 EGP10C 150 105 150 1.0 30 - 65 to + 150 EGP10D 200 140 200 EGP10F 300 210 300 EGP10G , VF EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT V 0.95 5.0 100 50 22 15 1.25 IR µA trr CJ , ) lead length, P.C.B. mounted (1) SYMBOL RJA EGP10A EGP10B EGP10C 50 EGP10D EGP10F , Junction Capacitance (pF) 50 40 30 20 10 0 1 TJ = 25 °C 0.1 EGP10A - EGP10D EGP10F - EGP10G 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 EGP10A - EGP10D EGP10F - EGP10G 0.1 1 10 100
Vishay Semiconductors
Original
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