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EGP10BE-E3/54 Vishay Semiconductors ULTRA FAST RECOVERY RECTFR 100V 1A 2PIN DO-204AL - Tape and Reel visit Digikey Buy
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EGP10BE-M3/73 Vishay Semiconductors DIODE GEN PURP 100V 1A DO204AL visit Digikey Buy
EGP10BE-M3/54 Vishay Semiconductors DIODE GEN PURP 100V 1A DO204AL visit Digikey Buy

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Part : EGP10B Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0669 Price Each : $0.0709
Part : EGP10B-E3/54 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.0699 Price Each : $0.0799
Part : EGP10B-E3/73 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.0699 Price Each : $0.0799
Part : EGP10BE-E3/54 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.1129 Price Each : $0.1279
Part : EGP10B-E3/54 Supplier : Vishay Siliconix Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.1350 Price Each : $0.1910
Part : EGP10B Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 48,433 Best Price : $0.09 Price Each : $0.09
Part : EGP10B Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 25,000 Best Price : $0.11 Price Each : $0.11
Part : EGP10B Supplier : GSI Technology Manufacturer : Bristol Electronics Stock : 11,925 Best Price : $0.0450 Price Each : $0.30
Part : EGP10B/23 Supplier : GSI Technology Manufacturer : Bristol Electronics Stock : 11,925 Best Price : $0.0450 Price Each : $0.30
Part : EGP10B-E3/54 Supplier : Vishay Intertechnology Manufacturer : RS Components Stock : 10,450 Best Price : £0.1050 Price Each : £0.13
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EGP10B Datasheet

Part Manufacturer Description PDF Type
EGP10B Fagor 100 V, 1 A glass passivated avalanche ultrafast recovery rectifier Original
EGP10B Fairchild Semiconductor 1.0A Ultra Fast Recovery Rectifier Original
EGP10B Fairchild Semiconductor Fast Rectifiers (Glass Passivated) Original
EGP10B Fairchild Semiconductor 1.0 Ampere Glass Passivated High Efficiency Rectifiers Original
EGP10B Fairchild Semiconductor 1.0A Ultra Fast Recovery Rectifier; Package: DO-41; No of Pins: 2; Container: Tape & Reel Original
EGP10B Galaxy Semi-Conductor Holdings HIGH EFFICIENCY RECTIFIER Original
EGP10B General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original
EGP10B General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original
EGP10B Micro Commercial Components 1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts Original
EGP10B Taitron Components 1.0A Sintered Glass Passivated Super Fast Recovery Rectifier Original
EGP10B Taiwan Semiconductor 1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers Original
EGP10B Taiwan Semiconductor 1.0 A Glass Passivated High Efficient Plastic Rectifier Original
EGP10B Zowie Technology SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Original
EGP10B N/A Shortform Data and Cross References (Misc Datasheets) Scan
EGP10B-E3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 100V 1A DO204AL Original
EGP10B-E3/73 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 100V 1A DO204AL Original
EGP10BE-E3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 100V 1A DO204AL Original
EGP10BEHE3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 100V 1A DO204AL Original
EGP10BEHM3/73 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 100V 50NS DO-41 Original
EGP10BE-M3/54 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 100V 50NS DO-41 Original
Showing first 20 results.

EGP10B

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor , 25 °C unless otherwise noted) PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F , ?91000 EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor , EGP10A EGP10B VF EGP10C EGP10D EGP10F 0.95 EGP10G 1.25 TA = 25 °C UNIT V , EGP10B EGP10C RJA (1) Typical thermal resistance EGP10D EGP10F EGP10G 50 UNIT Vishay General Semiconductor
Original
DO-204AL DO-41 22-B106 AEC-Q101 J-STD-002 22-B102

egp10b

Abstract: EGP10A end MAXIMUM RATINGS TA = 25 °C unless otherwise noted PARAMETER SYMBOL EGP10A EGP10B , CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL EGP10A EGP10B , ) EGP10A EGP10B EGP10C RJA EGP10D EGP10F EGP10G 50 UNIT °C/W Note: (1) Thermal
Vishay Semiconductors
Original
J-STD-002B JESD22-B102D 2002/95/EC 2002/96/EC

DO-204AL

Abstract: EGP10A unless otherwise noted) PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G , forward voltage SYMBOL 1.0 A EGP10A EGP10B VF EGP10C EGP10F 0.95 EGP10G 1.25 , EGP10A EGP10B EGP10C (1) EGP10D EGP10F EGP10G 50 UNIT °C/W Note (1) Thermal
Vishay Semiconductors
Original
Abstract: (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D , EGP10B VF EGP10C EGP10F 0.95 EGP10G 1.25 TA = 25 °C Maximum DC reverse current , otherwise noted) PARAMETER SYMBOL Typical thermal resistance RJA EGP10A EGP10B EGP10C Vishay Semiconductors
Original
2011/65/EU JS709A

EGP10G

Abstract: EGP10B EGP10A 50 35 50 EGP10B 100 70 100 EGP10C EGP10D EGP10F EGP10G 150 105 150 1.0 30 - 65 to + 150 200 140 , = 125 °C at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A at 4.0 V, 1 MHz SYMBOL VF EGP10A EGP10B EGP10C 0.95 , SYMBOL RJA EGP10A EGP10B EGP10C 50 EGP10D EGP10F EGP10G UNIT °C/W ORDERING INFORMATION PREFERRED P/N
Vishay Semiconductors
Original

EGP10G

Abstract: EGP10B storage temperature range Symbol VRRM VRMS VDC IF(AV) IFSM TJ,TSTG EGP10A EGP10B EGP10C EGP10D EGP10F , = 0.25 A at 4.0 V, 1 MHz Symbol EGP10A EGP10B EGP10C EGP10D VF IR 0.95 5.0 100 50 22 15 EGP10F , EGP10B EGP10C 50 EGP10D EGP10F EGP10G Unit °C/W Ratings and Characteristics Curves (TA =
Vishay Semiconductors
Original
UL-94V-0

EGP10G

Abstract: EGP10B storage temperature range Symbol VRRM VRMS VDC IF(AV) IFSM TJ,TSTG EGP10A EGP10B EGP10C EGP10D EGP10F , 1.0 A, Irr = 0.25 A at 4.0 V, 1 MHz Symbol EGP10A EGP10B EGP10C EGP10D VF IR 0.95 5.0 100 50 22 15 , EGP10B EGP10C 50 EGP10D EGP10F EGP10G Unit °C/W Ratings and Characteristics Curves (TA =
Vishay General Semiconductor
Original

EGP10G

Abstract: DO-204AL EGP10B EGP10C EGP10D EGP10F EGP10G Parameter Unit Maximum repetitive peak reverse voltage , 25°C ambient temperature unless otherwise specified. Symbol EGP10A EGP10B EGP10C EGP10D EGP10F
Vishay Semiconductors
Original
MIL-STD750

EGP10G

Abstract: DO-204AL otherwise specified. Symbol EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Parameter Unit Maximum , Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Symbol EGP10A EGP10B EGP10C
General Semiconductor
Original

EGP10B

Abstract: EGP10G EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Unit Maximum repetitive peak reverse voltage VRRM , Characteristics TA = 25 °C unless otherwise specified Parameter Test condition Symbol EGP10A EGP10B EGP10C , EGP10B RJA (1) EGP10C EGP10D EGP10F EGP10G 50 Unit °C/W Notes: (1) Thermal
Vishay Semiconductors
Original

EGP10G

Abstract: EGP10B SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT Maximum repetitive peak , forward voltage SYMBOL 1.0 A EGP10A EGP10B VF EGP10C EGP10F 0.95 EGP10G 1.25 , EGP10A EGP10B EGP10C (1) EGP10D EGP10F EGP10G 50 UNIT °C/W Note (1) Thermal
Vishay Semiconductors
Original

DO-204AL

Abstract: EGP10A =25ºC unless noted otherwise) Symbol Description EGP10A EGP10B EGP10D EGP10G EGP10J , Symbol Description EGP10A EGP10B EGP10D EGP10G EGP10J EGP10K Unit Conditions
Taitron Components
Original
MIL-STD-750

EGP10G

Abstract: DO-204AL PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT Maximum , Maximum DC reverse current at rated DC blocking voltage SYMBOL EGP10A EGP10B VF EGP10C , otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) EGP10A EGP10B EGP10C
Vishay Semiconductors
Original
JESD22-B102

EGP10B

Abstract: Super Fast Recovery Rectifier otherwise) Symbol Description EGP10A EGP10B EGP10D EGP10G EGP10J EGP10K Unit , Passivated Super Fast Recovery Rectifier EGP10A ­ EGP10K Symbol Description EGP10A EGP10B
Taitron Components
Original
Super Fast Recovery Rectifier

EGP10G

Abstract: EGP10A EGP10B 100 70 100 EGP10C 150 105 150 1.0 30 - 65 to + 150 EGP10D 200 140 200 EGP10F 300 210 300 EGP10G , VF EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT V 0.95 5.0 100 50 22 15 1.25 IR µA trr CJ , ) lead length, P.C.B. mounted (1) SYMBOL RJA EGP10A EGP10B EGP10C 50 EGP10D EGP10F
Vishay Semiconductors
Original

EGP10B

Abstract: , TSTG EGP10A 50 35 50 EGP10B 100 70 100 EGP10C 150 105 150 1.0 30 - 65 to + 150 EGP10D 200 140 200 , , Irr = 0.25 A 4.0 V, 1 MHz IR SYMBOL VF EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT V 0.95 5.0 , ) PARAMETER Typical thermal resistance SYMBOL RJA (1) EGP10A EGP10B EGP10C 50 EGP10D EGP10F
Vishay Semiconductors
Original

EGP10G

Abstract: DO-204AL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Parameter Unit Maximum repetitive peak reverse voltage , 25°C ambient temperature unless otherwise specified. Symbol EGP10A EGP10B EGP10C EGP10D EGP10F
Vishay Semiconductors
Original
Abstract: 50 35 50 EGP10B 100 70 100 EGP10C 150 105 150 1.0 30 - 65 to + 150 EGP10D 200 140 200 EGP10F 300 210 , 0.25 A 4.0 V, 1 MHz IR SYMBOL VF EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT V 0.95 5.0 1.25 , ) PARAMETER Typical thermal resistance SYMBOL RJA (1) EGP10A EGP10B EGP10C 50 EGP10D EGP10F Vishay Semiconductors
Original

HER307g

Abstract: EGP10A MCC TM Micro Commercial Components Micro Commercial Components Corp. Products End of Life Notification Issue date: Oct-7th-2008 Last Buy Date :N/A Description and Purpose: MCC has undergone a review of its core business and products , and determined to discontinue below products: DiscontinuedDevices Devices Possible Replacements Possible Replacements EGP10A HER101G EGP10B HER102G , EGP10B EGP10D EGP10F EGP10G EGP10J EGP10K Maximum Recurrent Peak Reverse Voltage 50V 100V
Micro Commercial Components
Original
EGP20A EGP20B EGP20D EGP20F HER307g HER103G HER104G HER105G HER106G HER107G

EGP10G

Abstract: 50 35 50 EGP10B 100 70 100 EGP10C 150 105 150 1.0 30 - 65 to + 150 EGP10D 200 140 200 EGP10F 300 210 , 0.25 A 4.0 V, 1 MHz IR SYMBOL VF EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT V 0.95 5.0 1.25 , ) PARAMETER Typical thermal resistance SYMBOL RJA (1) EGP10A EGP10B EGP10C 50 EGP10D EGP10F
Vishay Semiconductors
Original

EGP10A

Abstract: egp 100 SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT Maximum repetitive peak , forward voltage SYMBOL 1.0 A EGP10A EGP10B VF EGP10C EGP10F 0.95 EGP10G 1.25 , EGP10A EGP10B EGP10C (1) EGP10D EGP10F EGP10G 50 UNIT °C/W Note (1) Thermal
SIYU
Original
egp 100

EGP10G

Abstract: EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Unit Maximum repetitive peak reverse voltage VRRM , Characteristics TA = 25 °C unless otherwise specified Parameter Test condition Symbol EGP10A EGP10B EGP10C , EGP10B RJA (1) EGP10C EGP10D EGP10F EGP10G 50 Unit °C/W Notes: (1) Thermal
Vishay Semiconductors
Original
Showing first 20 results.