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EB capacitor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SP3220E/EB/EU ® +3.0V to +5.5V RS-232 RS-232 Driver/Receiver Pair Meets All EIA-232 EIA-232 and ITU V , VCC 3 14 GND 4 SP3220 SP3220 E/EB/EU 5 13 T1OUT 12 No Connect 6 11 T1IN 7 10 , VCC 6 C2- SP3220 SP3220 E/EB/EU V- 9 R1OUT R1IN SHDN + 0.1uF 13 RS-232 RS-232 OUTPUTS , : 8/22/05 Date: 8/30/05 *can be returned to either VCC or GND SP3220E/EB/EU High ESD RS-232 RS-232 Driver/Receiver SP3220E/EB/EU High ESD RS-232 RS-232 Driver/Receiver 1 © Copyright 2005 Sipex Corporation ... Sipex
Original
datasheet

21 pages,
441.29 Kb

SP3220EU IEC1000-4-2 MAX3221E SP3220 sp3220b SP3220E SP3220EB SP3220EET EIA-232 ISL3221 SP3220E/EB/EU RS-232 TEXT
datasheet frame
Abstract: : ESL: Weight: Your Source For Capacitor Solutions 65 °C 0.75 Frequency Load Life , . 204 , for cooling the capacitor and removing the heat caused by ripple current. Ripple Current Capability , Drawings Style A: Mounting Tabs Style C: No Tabs Case Code EK EB 2.096 L Length 1.50 , : cde@cornell-dubilier.com CORNELL DUBILIER Your Source For Capacitor Solutions Type MLP, 85 C Flatpack, Ultra-Long ... Cornell Dubilier
Original
datasheet

8 pages,
186.3 Kb

MLP501M150EK0A MLP112M100EK0A MLP132M150EB0A MLP133M016EK0A MLP173M010EK0A MLP193M7R5EK0A MLP272M100EB0A MLP383M016EB0A MLP433M010EB0A MLP473M7R5EB0A capacitor 220 uf 400V esr MLP442M050EK0A TEXT
datasheet frame
Abstract: 3.0V to 5.5V Charge pump Capacitor value for SP3220E/EB/EU C1 ­ C4 = 0.1uF C1 ­ C4 = 0.22uF Date: 8 , ® SP3220E/EB/EU +3.0V to +5.5V RS-232 RS-232 Driver/Receiver Pair Meets All EIA-232 EIA-232 and ITU V , Discharge +8kV IEC1000-4-2 IEC1000-4-2 Contact Discharge 1 2 3 4 5 6 7 8 SP3220 SP3220 E/EB/EU 16 SHDN 15 VCC 14 GND 13 , T1OUT R1IN 13 8 V+ 3 *C3 + 0.1uF C5 0.1uF C1 + SP3220 SP3220 E/EB/EU V- 7 C4 + 0.1uF LOGIC INPUTS LOGIC OUTPUTS RS-232 RS-232 OUTPUTS RS-232 RS-232 INPUTS Date: 8/18/05 SP3220E/EB/EU High ESD RS ... Sipex
Original
datasheet

21 pages,
159.27 Kb

SP3220E/EB/EU RS-232 EIA-232 RS232 SP3220E SP3220EB SP3220EU MAX3221E ISL3221 IEC1000-4-2 TEXT
datasheet frame
Abstract: 3.0V to 5.5V Charge pump Capacitor value for SP3220E/EB/EU C1 ­ C4 = 0.1uF C1 ­ C4 = 0.22uF Date: 8 , ® SP3220E/EB/EU +3.0V to +5.5V RS-232 RS-232 Driver/Receiver Pair Meets All EIA-232 EIA-232 and ITU V , Discharge +8kV IEC1000-4-2 IEC1000-4-2 Contact Discharge 1 2 3 4 5 6 7 8 SP3220 SP3220 E/EB/EU 16 SHDN 15 VCC 14 GND 13 , T1OUT R1IN 13 8 V+ 3 *C3 + 0.1uF C5 0.1uF C1 + SP3220 SP3220 E/EB/EU V- 7 C4 + 0.1uF LOGIC INPUTS LOGIC OUTPUTS RS-232 RS-232 OUTPUTS RS-232 RS-232 INPUTS Date: 8/22/05 SP3220E/EB/EU High ESD RS ... Sipex
Original
datasheet

21 pages,
176.61 Kb

ISL3221 SP3220E/EB/EU RS-232 EIA-232 RS232 SP3220E SP3220EB SP3220EU MAX3221E IEC1000-4-2 TEXT
datasheet frame
Abstract: EL/EB/EG Vishay Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor Style , Revision: 16-Nov-05 EL/EB/EG Aluminum Capacitors Axial and Mounting Ring Capacitor Style Vishay , www.vishay.com 179 EL/EB/EG Vishay Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor , /EB/EG Vishay Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor Style LOW , 500 4.5 × 10 - - - - - - - 4.5 × 10 - - - 6.5 × 18 - EB ... Vishay Roederstein
Original
datasheet

12 pages,
366.74 Kb

vishay EB CECC 30301 gpf 40 85 21 Vishay Roederstein EL/EB 00LG247P00B 00PH347N00B EG Roederstein 00HD247M00B Roederstein EG 2200 ROEDERSTEIN EG capacitors roederstein eb ROEderstein EG capacitor ROEderstein EB GPF capacitors Vishay Roederstein EG Roederstein EG Vishay Roederstein EB TEXT
datasheet frame
Abstract: V * inch length computergrade capacitor. Compared to strapping the computergrade to a board it saves , with rubber ring seals. The rubber limits the capacitor life because it permits drying out; electrolyte , of service in our Type 350 capacitor. Based on accelerated life tests the MLP and MLS can operate , 970 530 390 Ripple Amps 85°C Case Temp Case 120 Hz 20 kHz Code 4.2 4.5 : EK 9.1 9.8 EB 4.2 4.5 EK EB 9.0 9.6 4.1 4.4 EK EB 9.0 9.6 4.4 EK 4.0 8.7 9.6 EB 3.9 4.4 . EK EB 8.6 9.6 4.4 . : 3:4 v:;'. EK 8.4 ... OCR Scan
datasheet

5 pages,
570.43 Kb

EB 202 D lp371 TEXT
datasheet frame
Abstract: EL/EB/EG Vishay Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor Style , Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor Style UR (V) 100 V 6.3 EB 8 × 18 10 × 25 , /EB/EG Aluminum Capacitors Axial and Mounting Ring Capacitor Style ELECTRICAL DATA AND ORDERING , -Nov-05 EL/EB/EG Aluminum Capacitors Axial and Mounting Ring Capacitor Style LOW TEMPERATURE BEHAVIOUR , www.vishay.com 181 EL/EB/EG Vishay Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor Style ... Vishay Roederstein
Original
datasheet

11 pages,
336.84 Kb

ROEderstein EB GPF capacitors Roederstein EB Roederstein EG TEXT
datasheet frame
Abstract: .54 CERAMIC CAPACITOR ARRAY , without notice. Any capacitor misapplied may fail and there by damage other circuit components. Please refer to application notes and recommendations in this catalog for a complete description of capacitor , specifically for chip capacitor manufacture. The process features a high degree of mechanization as well as , parallel resistance (IR) is normally very high, the total impedance of the capacitor can be approximated ... KEMET
Original
datasheet

24 pages,
241.27 Kb

T520 B 103 K ceramic capacitor capacitor 220 micro farad 16 volts CC 0201 K R X5R CWR11 Diode EB 29 Diodes EB 29 F-2102 F-2105 T510 T496 MIL-PRF 10 micro farad 16V capacitor marking EB 202 diode kemet capacitor C0603 kc 472 821 ceramic capacitor capacitor 2200 micro farad 25V capacitor 4700 micro farad 25V TEXT
datasheet frame
Abstract: EL/EB/EG Vishay Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor Style , Revision: 24-Jun-04 EL/EB/EG Aluminum Capacitors Axial and Mounting Ring Capacitor Style Vishay , EL/EB/EG Vishay Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor Style , : 24-Jun-04 EL/EB/EG Aluminum Capacitors Axial and Mounting Ring Capacitor Style Vishay , EL/EB/EG Vishay Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor Style ... Vishay Roederstein
Original
datasheet

11 pages,
337.15 Kb

Vishay Roederstein EG vishay EB Roederstein EL/EB/EG ROEDERSTEIN EG capacitors Roederstein EG EG Roederstein 00CK222G00V Vishay Roederstein EB TEXT
datasheet frame
Abstract: EL/EB/EG Vishay Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor Style , www.vishay.com 5 EL/EB/EG Vishay Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor Style , EL/EB/EG Vishay Roederstein Aluminum Capacitors Axial and Mounting Ring Capacitor Style , -Jun-04 EL/EB/EG Aluminum Capacitors Axial and Mounting Ring Capacitor Style Vishay Roederstein TEST , 4.5 ×10 3.3 × 11 4.5 ×10 4.5 × 10 EB 100 4.5 × 10 4.5 × 10 4.5 × 10 160 6.5 × 18 8 × 18 10 × 25 12 × ... Vishay Roederstein
Original
datasheet

11 pages,
125.38 Kb

ROEderstein EG capacitor ROEderstein EB GPF capacitors Vishay Roederstein EG Roederstein EG EG Roederstein TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
0.1mF ceram- ic capacitor is used on every device between V CC and V SS . This should be a high In addition, a 4.7mF electrolytic capacitor should be used be- tween V CC and V SS for every eight devices. This capacitor should be mounted near the power sup- ply connection point. The purpose of this capacitor is to overcome the voltage drop caused by the in- ductive effects of PCB - - E1 14.50 14.90 0.571 0.587 e 2.54 - - 0.100 - - eA 14.99 - - 0.590 - - eB 16.18 18.03 0.637
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7067-v1.htm
STMicroelectronics 25/05/2000 21.8 Kb HTM 7067-v1.htm
decoupling ca- pacitors. It is recommended that a 0.1mF ceramic capacitor be used on every device between V be placed as close to the device as possible. In addi- tion, a 4.7mF bulk electrolytic capacitor should be used between V CC and V SS for every eight devic- es. The bulk capacitor should be located near the power supply connection point.The purpose of the bulk capacitor is to overcome the voltage - 0.100 - - eA 14.99 - - 0.590 - - eB 16.18 18.03 0.637 0.710 L 3.18 0.125 S 1.52 2.49 0.060 0.098 j
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4375-v1.htm
STMicroelectronics 02/04/1999 20.94 Kb HTM 4375-v1.htm
decoupling capacitors. It is recommended that a 0.1mF ceramic capacitor is used on every device between V CC as close as possible to the device. In addition, a 4.7mF electrolytic capacitor should be used between V CC and V SS for every eight devices. This capacitor should be mounted near the power supply connection point. The pur- pose of this capacitor is to overcome the voltage drop caused by the inductive eB 16.18 18.03 0.637 0.710 L 3.18 0.125 S 1.52 2.49 0.060 0.098 K 8.00 - - 0.315 - - K1 16.00 - -
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6184-v1.htm
STMicroelectronics 02/04/1999 19.46 Kb HTM 6184-v1.htm
0.1mF ceram- ic capacitor is used on every device between V CC and V SS . This should be a high In addition, a 4.7mF electrolytic capacitor should be used be- tween V CC and V SS for every eight devices. This capacitor should be mounted near the power sup- ply connection point. The purpose of this capacitor is to overcome the voltage drop caused by the in- ductive effects of PCB - 0.590 - - eB 16.18 18.03 0.637 0.710 L 3.18 4.10 0.125 0.161 S 1.52 2.49 0.060 0.098 K 8.00 -
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6184-v3.htm
STMicroelectronics 29/11/2000 21.76 Kb HTM 6184-v3.htm
decoupling capacitors. It is recommended that a 0.1mF ceram- ic capacitor is used on every device between V close as possible to the device. In addition, a 4.7mF electrolytic capacitor should be used be- tween V CC and V SS for every eight devices. This capacitor should be mounted near the power sup- ply connection point. The purpose of this capacitor is to overcome the voltage drop caused by the in- e 2.54 - - 0.100 - - eA 14.99 - - 0.590 - - eB 16.18 18.03 0.637 0.710 L 3.18 4.10 0.125 0.161 S
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6184.htm
STMicroelectronics 20/10/2000 22.96 Kb HTM 6184.htm
ceramic capacitor be used on every device between V CC and V SS . This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible. In addition, a 4.7 m F bulk electrolytic capacitor should be used between V CC and V SS for every eight devices. The bulk capacitor should be located near the power supply connection point.The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces. 4/16 M27C4002 M27C4002
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2386-v2.htm
STMicroelectronics 14/06/1999 21.61 Kb HTM 2386-v2.htm
recommended that a 0.1mF ceram- ic capacitor is used on every device between V CC and V SS . This should be a device. In addition, a 4.7mF electrolytic capacitor should be used be- tween V CC and V SS for every eight devices. This capacitor should be mounted near the power sup- ply connection point. The purpose of this capacitor is to overcome the voltage drop caused by the in- ductive effects of PCB traces. 0.571 0.587 e 2.54 - - 0.100 - - eA 14.99 - - 0.590 - - eB 16.18 18.03 0.637 0.710 L 3.18 0.125 S 1.52
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6184-v2.htm
STMicroelectronics 14/06/1999 19.51 Kb HTM 6184-v2.htm
decoupling ca- pacitors. It is recommended that a 0.1mF ceramic capacitor be used on every device between V be placed as close to the device as possible. In addi- tion, a 4.7mF bulk electrolytic capacitor should be used between V CC and V SS for every eight devic- es. The bulk capacitor should be located near the power supply connection point.The purpose of the bulk capacitor is to overcome the voltage - 0.100 - - eA 14.99 - - 0.590 - - eB 16.18 18.03 0.637 0.710 L 3.18 0.125 S 1.52 2.49 0.060 0.098 j
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4375-v2.htm
STMicroelectronics 14/06/1999 20.9 Kb HTM 4375-v2.htm
capacitor is used on every device between V CC and V SS . This should be a high frequency type of low electrolytic capacitor should be used be- tween V CC and V SS for every eight devices. This capacitor should be mounted near the power sup- ply connection point. The purpose of this capacitor is to overcome 0.600 - - E1 14.50 14.90 0.571 0.587 e 2.54 - - 0.100 - - eA 14.99 - - 0.590 - - eB 16.18 18.03 0.637 to scale. FDIPW-b A3 A1 A L B1 B e1 D S E1 E N 1 C eA D2 K K1 a eB A2 13/16 M27V800 M27V800 Table 13. PDIP42 PDIP42
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5608.htm
STMicroelectronics 20/10/2000 26.44 Kb HTM 5608.htm
decoupling ca- pacitors. It is recommended that a 0.1mF ceramic capacitor be used on every device between V be placed as close to the device as possible. In addi- tion, a 4.7mF bulk electrolytic capacitor should be used between V CC and V SS for every eight devic- es. The bulk capacitor should be located near the power supply connection point. The purpose of the bulk capacitor is to overcome the voltage e 2.54 - - 0.100 - - eA 14.99 - - 0.590 - - eB 16.18 18.03 0.637 0.710 L 3.18 4.10 0.125 0.161 S
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5858.htm
STMicroelectronics 20/10/2000 25.09 Kb HTM 5858.htm