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LT1102 Linear Technology IC INSTRUMENTATION AMPLIFIER, 500 uV OFFSET-MAX, Instrumentation Amplifier ri Buy
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EB 500

Catalog Datasheet Results Type PDF Document Tags
Abstract: ] 2000 EB 100 ER 13 0.630 [16.0] 0.472 [12.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 250 EB , 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 P09 PJ EB 100 , [12.0] 750 P09 PJ EB 100 RC3 RF ER 13 1.26 [32.0] 0.472 [12.0] 500 P09 PJ EB 100 RC4 , ] 4000 GLOBAL CODE LEAD FREE - UNITS/ BULK - EB 500 EB 500 EB 500 - - ... Original
datasheet

2 pages,
89.22 Kb

smd code rc3 smd code pj 13 SMD code PJ smd 3114 datasheet EB 500 dale 2000 ICM-0805 IHLP-2020CZ sm 1812 RC2 smd smd transistor rc4 pdf file ihlp1616 2020ab datasheet abstract
datasheet frame
Abstract: ) C IB (EB) 500 hFE 400 300 200 10 COB (EB) 100 VCE = 1V 1 0 0.01 0.1 , Collector-Base Voltage V C BO 50 v Emitter-Base Voltage V EBO 5.0 v IC 500 mA ... Original
datasheet

3 pages,
86.02 Kb

BC817-40 BC817-25 BC817-16 BC817 BC817 abstract
datasheet frame
Abstract: hFE vs. IC 100 600 Capacitance, C (pF) C IB (EB) 500 hFE 400 300 200 10 COB (EB) 100 VCE = 1V 1 0 0.01 0.1 1 10 100 Collector Current, I C (mA , Voltage V EBO 5.0 v IC 500 mA Max Power Dissipation (Note 1) PTOT 225 mW ... Original
datasheet

3 pages,
458.01 Kb

BC817-40 BC817-25 BC817-16 BC817 BC817 abstract
datasheet frame
Abstract: Il m > m L U LU o II Collector cut-off 'C E O V CE= V CE= V EB= > 500 V 550 V 10 , TIPL760C TIPL760C V CEO V EBO !c V CES V CBO SYMBOL VALUE 1100 1200 1100 1200 500 550 10 UNIT V , TEST CONDITIONS = 10m A L = 25 mH > MIN TIPL760B TIPL760B TIPL760C TIPL760C TIPL760B TIPL760B TIPL760C TIPL760C 500 550 TYP MAX , A V BE(off) - 300 -5 V lß(on) = 0 6 A (see Figures 1 and 2) 250 150 400 3 500 - -5 V T c = 100°C ... OCR Scan
datasheet

7 pages,
247.85 Kb

TIPL760B TIPL760C TIPL760B abstract
datasheet frame
Abstract: Vdc Eb = 300 lb - - 2000 /¿Adc Eel = -55 Vdc Eb = 500 lb 5 - 500 /¿Adc Accelerated Grid Current (Ef , Eb* 500 Vdc READJUST FOR MINIMUM RINGING ANO OVERSHOOT HEATER BASE DIAGRAM SPECIFIED. OUTLINE , accelerations as high as 500 G. The rugged pure Tungsten heater is supported in a high density aluminum oxide , Heater-Cathode Voltage . 100 ±500 volts Max. Grid Resistance . 1.0 megohm , . 2%" 1^6" Nom %" any 80,000 feet 300°C 500 G 50 G 5,000 hrs. chart 3 PULSE TEST CONDITIONS AND ... OCR Scan
datasheet

4 pages,
425.03 Kb

BENDIX Bendix tube Bendix tubes heavy duty induction heating high frequency induction heater 5687 general induction heater circuit diagram tubes 5687 induction heater tube 5687 EB-500 diagram induction heater 5687 tube TE-54 TE-54 abstract
datasheet frame
Abstract: 0.630 [16.0] 0.472 [12.0] 500 EB 100 ER 13 0.630 [16.0] 0.472 [12.0] 1000 EB 100 ER 13 0.630 [16.0] 0.472 [12.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 , [8.0] 2000 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 7 0.315 [8.0] 0.157 [4.0] 2000 ER 7 0.315 [8.0] 0.157 , [12.0] 750 P09 PJ EB 100 RC3 RF ER 13 1.26 [32.0] 0.472 [12.0] 500 P09 PJ EB 100 RC4 RG ER 13 1.73 [44.0 ... Original
datasheet

4 pages,
113.79 Kb

IMC-0603 IMC-0603 abstract
datasheet frame
Abstract: ER 13 0.630 [16.0] 0.472 [12.0] 500 EB 100 ER 13 0.630 [16.0] 0.472 [12.0] 1000 EB 100 ER 13 0.630 [16.0] 0.472 [12.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 250 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 250 EB 100 ER 13 , [8.0] 2000 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 7 0.315 [8.0] 0.157 [4.0] 2000 ER 7 0.315 [8.0] 0.157 ... Original
datasheet

5 pages,
116.07 Kb

IMC-0805-01 IMC-0805-01 abstract
datasheet frame
Abstract: ER 13 0.630 [16.0] 0.472 [12.0] 500 EB 100 ER 13 0.630 [16.0] 0.472 [12.0] 1000 EB 100 ER 13 0.630 [16.0] 0.472 [12.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 250 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 250 EB 100 ER 13 , [8.0] 2000 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 7 0.315 [8.0] 0.157 [4.0] 2000 ER 7 0.315 [8.0] 0.157 ... Original
datasheet

5 pages,
114.53 Kb

IMC-1812 IMC-1812 abstract
datasheet frame
Abstract: 0.630 [16.0] 0.472 [12.0] 500 EB 100 ER 13 0.630 [16.0] 0.472 [12.0] 1000 EB 100 ER 13 0.630 [16.0] 0.472 [12.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 , [8.0] 2000 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 7 0.315 [8.0] 0.157 [4.0] 2000 ER 7 0.315 [8.0] 0.157 , [12.0] 750 P09 PJ EB 100 RC3 RF ER 13 1.26 [32.0] 0.472 [12.0] 500 P09 PJ EB 100 RC4 RG ER 13 1.73 [44.0 ... Original
datasheet

7 pages,
179.07 Kb

ILBB-0603 ILBB-0603 abstract
datasheet frame
Abstract: 0.630 [16.0] 0.472 [12.0] 500 EB 100 ER 13 0.630 [16.0] 0.472 [12.0] 1000 EB 100 ER 13 0.630 [16.0] 0.472 [12.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 , [8.0] 2000 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 13 0.945 [24.0] 0.630 [16.0] 500 EB 100 ER 7 0.315 [8.0] 0.157 [4.0] 2000 ER 7 0.315 [8.0] 0.157 , [12.0] 750 P09 PJ EB 100 RC3 RF ER 13 1.26 [32.0] 0.472 [12.0] 500 P09 PJ EB 100 RC4 RG ER 13 1.73 [44.0 ... Original
datasheet

5 pages,
121.16 Kb

S51 EMI marking CODE PJ LPT-4545 LPT-4545 abstract
datasheet frame

Datasheet Content (non pdf)

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BYD33J/EB Fast soft-recovery controlled avalanche rectifiers BYD33K BYD33K BYD33K BYD33K Fast rectifiers BYD33M/EB Fast soft-recovery controlled avalanche rectifiers BYD33U BYD33U BYD33U BYD33U avalanche rectifiers BYD33V/EB Fast soft-recovery controlled avalanche rectifiers Ultra fast low-loss controlled avalanche rectifiers BYV27-500 Ultra fast low-loss BYV28-50/20 BYV28-50/20 BYV28-50/20 BYV28-50/20 Ultra fast low-loss controlled avalanche rectifiers BYV28-500 Ultra fast
www.datasheetarchive.com/files/philips/catalog/listing/31675-v3.html
Philips 30/11/2000 30.33 Kb HTML 31675-v3.html
BYD33J/EB Fast soft-recovery controlled avalanche rectifiers BYD33K BYD33K BYD33K BYD33K Fast rectifiers BYD33M/EB Fast soft-recovery controlled avalanche rectifiers BYD33U BYD33U BYD33U BYD33U avalanche rectifiers BYD33V/EB Fast soft-recovery controlled avalanche rectifiers BYT28-500 Dual rectifier diodes ultrafast BYT79-300 BYT79-300 BYT79-300 BYT79-300 Rectifier diodes ultrafast BYT79-400 BYT79-400 BYT79-400 BYT79-400 Rectifier diodes ultrafast BYT79-500 Rectifier diodes ultrafast
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Philips 30/11/2000 55.77 Kb HTML 31683-v1.html
5 m A m A I EBO Collector Cut-off Current (I C = 0) V EB = 5 V for 2N5320 2N5320 2N5320 2N5320 V EB = 4 V 2N5320 2N5320 2N5320 2N5320 for 2N5321 2N5321 2N5321 2N5321 6 5 V V V CE(sat) * Collector-Emitter Saturation Voltage I C = 500 mA I B = 50 mA for 2N5320 2N5320 2N5320 2N5320 for 2N5321 2N5321 2N5321 2N5321 0.5 0.8 V V V BE * Base-Emitter Voltage I C = 500 mA V CE = 4 V for 2N5320 2N5320 2N5320 2N5320 for 2N5321 2N5321 2N5321 2N5321 1.1 1.4 V V h FE * DC Current Gain for 2N5320 2N5320 2N5320 2N5320 I C = 500 mA V CE = 4 V I C = 1 A V CE = 2 V for 2N5321 2N5321 2N5321 2N5321 I C = 500 mA V CE = 4 V 30 10 40 130 250 f T Transition Frequency I C = 50
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3275-v1.htm
STMicroelectronics 02/04/1999 4.79 Kb HTM 3275-v1.htm
V for 2N5321 2N5321 2N5321 2N5321 0.5 5 m A m A I EBO Collector Cut-off Current (I C = 0) V EB = 5 V for 2N5320 2N5320 2N5320 2N5320 V EB = 4 V for 2N5321 2N5321 2N5321 2N5321 0.1 0.5 m A m A V (BR)CEV Collector-Emitter (sat) * Collector-Emitter Saturation Voltage I C = 500 mA I B = 50 mA for 2N5320 2N5320 2N5320 2N5320 for 2N5321 2N5321 2N5321 2N5321 0.5 0.8 V V V BE * Base-Emitter Voltage I C = 500 mA V CE = 4 V for 2N5320 2N5320 2N5320 2N5320 for 2N5321 2N5321 2N5321 2N5321 1.1 1.4 V V h FE * DC Current Gain for 2N5320 2N5320 2N5320 2N5320 I C = 500 mA V CE = 4 V I C =
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3275.htm
STMicroelectronics 20/10/2000 6.93 Kb HTM 3275.htm
5 m A m A I EBO Collector Cut-off Current (I C = 0) V EB = 5 V for 2N5320 2N5320 2N5320 2N5320 V EB = 4 V 2N5320 2N5320 2N5320 2N5320 for 2N5321 2N5321 2N5321 2N5321 6 5 V V V CE(sat) * Collector-Emitter Saturation Voltage I C = 500 mA I B = 50 mA for 2N5320 2N5320 2N5320 2N5320 for 2N5321 2N5321 2N5321 2N5321 0.5 0.8 V V V BE * Base-Emitter Voltage I C = 500 mA V CE = 4 V for 2N5320 2N5320 2N5320 2N5320 for 2N5321 2N5321 2N5321 2N5321 1.1 1.4 V V h FE * DC Current Gain for 2N5320 2N5320 2N5320 2N5320 I C = 500 mA V CE = 4 V I C = 1 A V CE = 2 V for 2N5321 2N5321 2N5321 2N5321 I C = 500 mA V CE = 4 V 30 10 40 130 250 f T Transition Frequency I C = 50
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3275-v2.htm
STMicroelectronics 14/06/1999 4.75 Kb HTM 3275-v2.htm
-0.5 -5 m A m A I EBO Collector Cut-off Current (I C = 0) V EB = -5 V for 2N5322 2N5322 2N5322 2N5322 V EB = -4 V for 2N5323 2N5323 2N5323 2N5323 -0.1 -0.5 m A m A V (BR)CEV ) * Collector-Emitter Saturation Voltage I C = -500 mA I B = -50 mA for 2N5322 2N5322 2N5322 2N5322 for 2N5323 2N5323 2N5323 2N5323 -0.7 -1.2 V V V BE * Base-Emitter Voltage I C = -500 mA V CE = -4 V for 2N5322 2N5322 2N5322 2N5322 for 2N5323 2N5323 2N5323 2N5323 -1.1 -1.4 V V h FE * DC Current Gain for 2N5322 2N5322 2N5322 2N5322 I C = -500 mA V
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3276-v3.htm
STMicroelectronics 25/05/2000 6.62 Kb HTM 3276-v3.htm
0.5 5 m A m A I EBO Collector Cut-off Current (I C = 0) V EB = 5 V for 2N5320 2N5320 2N5320 2N5320 V EB = 4 V for 2N5321 2N5321 2N5321 2N5321 0.1 0.5 m A m A V (BR)CEV ) * Collector-Emitter Saturation Voltage I C = 500 mA I B = 50 mA for 2N5320 2N5320 2N5320 2N5320 for 2N5321 2N5321 2N5321 2N5321 0.5 0.8 V V V BE * Base-Emitter Voltage I C = 500 mA V CE = 4 V for 2N5320 2N5320 2N5320 2N5320 for 2N5321 2N5321 2N5321 2N5321 1.1 1.4 V V h FE * DC Current Gain for 2N5320 2N5320 2N5320 2N5320 I C = 500 mA V CE =
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3275-v3.htm
STMicroelectronics 25/05/2000 6.57 Kb HTM 3275-v3.htm
= 0) V EB = -5 V for 2N5322 2N5322 2N5322 2N5322 V EB = -4 V for 2N5323 2N5323 2N5323 2N5323 -0.1 -0.5 m A m A V Saturation Voltage I C = -500 mA I B = -50 mA for 2N5322 2N5322 2N5322 2N5322 for 2N5323 2N5323 2N5323 2N5323 -0.7 -1.2 V V V BE * Base-Emitter Voltage I C = -500 mA V CE = -4 V for 2N5322 2N5322 2N5322 2N5322 for 2N5323 2N5323 2N5323 2N5323 -1.1 -1.4 V V h FE * DC Current Gain for 2N5322 2N5322 2N5322 2N5322 I C = -500 mA V CE = -4 V I C = -1 A V CE = -2 V for 2N5323 2N5323 2N5323 2N5323 I C = -500 mA V CE = -4 V 30 10 40 130 250 f T Transition Frequency I C = -50
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3276.htm
STMicroelectronics 20/10/2000 6.98 Kb HTM 3276.htm
-0.5 -5 m A m A I EBO Collector Cut-off Current (I C = 0) V EB = -5 V for 2N5322 2N5322 2N5322 2N5322 V EB = -4 V m A for 2N5322 2N5322 2N5322 2N5322 for 2N5323 2N5323 2N5323 2N5323 -6 -5 V V V CE(sat) * Collector-Emitter Saturation Voltage I C = -500 mA I B = -50 mA for 2N5322 2N5322 2N5322 2N5322 for 2N5323 2N5323 2N5323 2N5323 -0.7 -1.2 V V V BE * Base-Emitter Voltage I C = -500 mA V CE = -4 V for 2N5322 2N5322 2N5322 2N5322 for 2N5323 2N5323 2N5323 2N5323 -1.1 -1.4 V V h FE * DC Current Gain for 2N5322 2N5322 2N5322 2N5322 I C = -500 mA V CE = -4 V I C = -1 A V CE = -2 V for 2N5323 2N5323 2N5323 2N5323 I C = -500 mA V CE = -4 V 30 10 40 130
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3276-v1.htm
STMicroelectronics 02/04/1999 4.84 Kb HTM 3276-v1.htm
-0.5 -5 m A m A I EBO Collector Cut-off Current (I C = 0) V EB = -5 V for 2N5322 2N5322 2N5322 2N5322 V EB = -4 V m A for 2N5322 2N5322 2N5322 2N5322 for 2N5323 2N5323 2N5323 2N5323 -6 -5 V V V CE(sat) * Collector-Emitter Saturation Voltage I C = -500 mA I B = -50 mA for 2N5322 2N5322 2N5322 2N5322 for 2N5323 2N5323 2N5323 2N5323 -0.7 -1.2 V V V BE * Base-Emitter Voltage I C = -500 mA V CE = -4 V for 2N5322 2N5322 2N5322 2N5322 for 2N5323 2N5323 2N5323 2N5323 -1.1 -1.4 V V h FE * DC Current Gain for 2N5322 2N5322 2N5322 2N5322 I C = -500 mA V CE = -4 V I C = -1 A V CE = -2 V for 2N5323 2N5323 2N5323 2N5323 I C = -500 mA V CE = -4 V 30 10 40 130
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3276-v2.htm
STMicroelectronics 14/06/1999 4.8 Kb HTM 3276-v2.htm