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Part Manufacturer Description Datasheet BUY
130094 TE Connectivity (130094) PIDG RING visit TE Connectivity
130090 TE Connectivity (130090) PIDG RING TONGUE visit TE Connectivity
130098 TE Connectivity Ltd TERM PLASTI-GRIP visit Digikey
1413009-9 TE Connectivity (1413009-9) V23086C2001A403 visit TE Connectivity

E 13009 L

Catalog Datasheet MFG & Type PDF Document Tags

E 13009 2

Abstract: e 13009 l (Figs 4 and 5) lC = 8 A; VCL = 300 V; T0 = 100 °C; l Bon = 1-6 A ; V BEoff = 5 V ^ ^ J u n e 1988 619 / N AUER P H I L I P S /D IS CR ET E MJE 13008 MJE 13009 SSE D t bb53131 , mA; l B = 0 Collector cut-off current V ce = VcESMmax! V b E * -1 .5 V V c e = v CESMmax; VBE = -1 , . 4.0 MHz Collector capacitance V c b = 10 V; l E = 0 Cob typ. 100 PF ton t$ tf , specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V
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transistor E 13009

Abstract: transistor d 13009 Emitter Sustaining Voltage: KSE13008 V c e o ( S U S ) : K S E 13009 Emitter Cutoff Current Iebo *DC , CURRENT Q A IN fc(A}, C O L L E C T O R C U R R E N T lc(A), C O L L E C T O R C U R R E N T COLLECTOR OUTPUT CAPACITANCE TURN ON TIME Cos(pF), CAPACITAN CE V r-'iW C O L L E C T O R B A S E V O LT A G E lc(A). C O L L E C T O R C U R R E N T TURN O FF TIME S AFE OPERATING AREA ts, TURN OFF TIME Vc e(V), C O L L E C T O R E M IT T E R V O LT A G E 592 ELECTRONICS
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transistor E 13009 transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L KSE13008/13009 KSE13009

SR 13009

Abstract: E 13009 ' C Ic = 0.5 A; L = 125 mH; Imeasure = 100 mA V CE Type T E 13008 T E 13009 TE 13008 TE 13009 TE 13008 T E 13009 Symbol ·c e s ces Ic e s ICES V(BRICEO V(BR)CEO V(BR)EBO Min iy p Max 0.5 , Collector-emitter voltage Test Conditions Type T E 13008 TE 13009 T E 13008 TE 13009 Symbol VcEO VcEO VCES VcES V , r c o n n e c te d w ith m c la llic s u rf a c e JH D H C T O 2 2 0 170 Rev. D l: 01.05.1995 , 1Junction case Test Conditions j i Symbol R th J C Value 1.25 Unit K/W 164 Rev. D l
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SR 13009 E 13009 e13009 transistor sr 13009 13008 TRANSISTOR e 13009 f TE13008 TE13009

transistor E 13009

Abstract: D 13009 K VOLTAGE h FE, D C CURRENT G A IN lr.(A>, C O L L E C T O R C U R R E N T COLLECTOR OUTPUT CAPACITANCE TURN ON TIME C 0 B(p P )t CA P A C ITA N C E V .« (V X C O L L E C T O R B A S E V O L T A G E lc , KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for , Collector Base Voltage : K S E 1 3008 : KSE13009 Collector Emitter Voltage : KSE13008 : K S E 1 3009 Emitter
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transistor b 595 J 13009 - 2 E 13009 2 transistor j 13009 p 13009 13009 power transistor

transistor E 13009

Abstract: transistor d 13009 subject to Changs without notice. bfci53T31 Doma? 1 N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 ESE D , . MJE13008 13009 VCESM max. 600 700 V VCEO max. 300 400 V 1.5 8.0 12 24 100 A A A W MECHANICAL DATA , 13009 j / j/ J S5E D bbSB^i ooniaa 3 T-33-13 RATINGS Limiting values in accordance with the , â'¢bm IE >E ptot tot 1 stg Rth j-mb Rth j-a max. max. max. max. max. max. max. max. max. â'¢ MJE13008 13009 VCESM max. 600 700 V vCEO , max. 300 400 V 9.0 8.0 12 24 6.0 12 18 36 2 16 100 800
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tr 13009 transistor MJE 13009 13009 J 13009 13009 K 13009 H 53T31 T0-220

e 13009 d

Abstract: transistor E 13009 CURRENT GAIN 0.1 0.2 0.5 1 2 5 10 20 50 100 lc(A), C O L L E C T O R C U , 1 2 5 10 20 50 100 200 500 1000 Vrn iV), C O L L E C T O R B A SE V O L T A G E lc(A), C O L L E C T O R C U R R E N T SAFE OPERATING AREA ts, tfOiS), TURN OFF TIME TURN OFF TIME lc(A}, C O L L E C T O R C U R R E N T V ce OO. C O L L E C T O R E M IT T E R V O LT A G E 241 ELECTRONICS BO 7^4142 0020157 TAT I KSE13008/13009 NPN
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e 13009 d transistor E 13009 l

D 13009 K

Abstract: p 13009 B J±0.1 (0.2) K±0.1 (A) BFPC L±0.05 R0 0.3±0.05 E 3.3MIN( ) 2 , -1306-5- CL580-1300-9- 4 6 9 10 12 14 19 20 26 28 30 32 40 A 4.0 5.0 6.5 7.0 8.0 , -1305-2- CL580-1307-8- CL580-1306-5- CL580-1300-9- 4 6 9 10 12 14 19 20 26 28 30 32 40 , 17.9 21.9 L 02.5 03.5 05.0 05.5 06.5 07.5 10.0 10.5 13.5 14.5 15.5 16.5 20.5 103 , -1302-4- CL580-1305-2- CL580-1307-8- CL580-1306-5- CL580-1300-9- 4 6 9 10 12 14 19 20 26
Hirose Electric
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DC100V 5mm-12mm OZ63-201C-50-9 FH3305 40S05SH 201C FH330 AC50V AC150V 1055H UL94V-0

e 13009 f

Abstract: E 13009 L 12.00 12.24 D 0.990 1.000 25.15 25.40 E 1.049 1.059 26.67 26.90 F 0.164 0.174 4.16 4.42 G 0.080 0.084 2.03 2.13 H 0.372 0.378 9.45 9.60 n bl u n L M M H SOT-227 Microsemi Catalog Repetive , FAX: (480) 947-1503 www.microsemi. com 1-30-09 Rev. 3 SSPB100060 SSPB1001 20 Figure 1 Typical Forward Characteristics - Per Leg 1000 500 100 50 a. E < o -o 10 â s 1 â'"A , - Amperes 1-30-09 Rev. 3
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SSPB100120 13009 l 2500VDC

transistor E 13009

Abstract: 13009 H (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , -220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q , A 15 VCE = 5 V 31 26 Group L Group H IC = 8 A _ _ DC current gain 0.85 0.9 , L = 200 µH 110 ns see Figure 9 IC = 5 A Inductive load ts IB1 = - IB2 = 1.6 A
STMicroelectronics
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all transistor 13009 13009L transistor switch 13009 ST-13009 13009 TRANSISTOR equivalent power switching transistor 13009

transistor E 13009 l

Abstract: (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , TO-220 mechanical data Dim A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 âP Q , 60 L = 200 µH Fall time V V VCE = 5 V IC = 5 A Inductive load V V V V 1.2 1.6 IB = 1.6 A Group L Group H IC = 8 A _ _ DC current gain 0.85 0.9 1.25 2.5 IB =
STMicroelectronics
Original

transistor E 13009

Abstract: 13009 H (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L , Group L Group H IC = 8 A _ _ IC = 5 A Inductive load µA µA 400 IC = 5 A Base-emitter , -2 A 1.6 2.5 µs 60 L = 200 µH 110 ns see Figure 9 Inductive load ts
STMicroelectronics
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13009 applications
Abstract: ERIN G INFORM ATION XX-0517-90C N o . o f p in s (1 -2 5 ) A ll o i m l n s i o n s : i n < urs |m il l i m c t t r s l J I1 : C o lle t c o n t a c t s S e r ie s D i s p l a y a n g le NORTH AMERICA E L E C T R O N I C S . IN C. http://www.arieselec.com â , 65 FAX: +31 78 615 43 11 Papendrecht, Holland 13009 REV.A -
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94-HB QQ-B-626 MIL-G45204 QQ-N-290 QQ-C-533 MIL-G-45204
Abstract: L ENTI RE DO NOT L I N E S I N D I C A T I N G E V E R Y LI VE C A V I T I E S E X C E P T EN D CAVI TI ES, S T A R T I N G EROM . 4 9 5 MAX [1 2 . 5 7 ] & APVD B E R Y L L I U M C O P P E R ( b E c U ) OR C O P P E R -N IC K E L -S IL IC O N (CuNiSi). C ON T AC T EI NI SH: . 0 0 0 0 5 0 GOLD IN T I N - L E A D ON S O L D E R TAILS, OVER D D N W 21SEP09 REV , ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL -
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M55302/130-10 M55302/130-09 M55302/130-08 M55302/130-07 M55302/130-06 M55302/130-05

J 13009 - 2

Abstract: j 13009 S> 3 ^ ^ IT : » H l ^ ^ 7 ^ ^ e in . 3 /aml¿X _L , 176379-1 -0 - 29 19 CTINE P LATE) 40 NOTE: / \ \ M A T E R I A L : H 0 U 5 I NG : G L A S S 'OS . a B H J P /N ^ F I L L E D 66NYL0N CUL 9 4 V - 0 ) B L A C K . CONTACT:PHOSPHOR-BRONZE RETENTION L E G : B R A S S . F I N I S H : C O N T A C T : 0 . 3pimMIN- Au A T C O N T A C T A R E A 1 jjm MIN' T I N L E A D A T T I N E , O V E R Ni R E T E N T I O N L E G : 1 jjmMIN` T I N L E
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mj 13009 13009R J-12583 30-JAN

DO-213AA

Abstract: j 13009 9.1 5 9.1 5 9.1 5 9.1 5 8 5 8 0.02 8 1 S e c tio n O rg a n iz a tio n : Z e n e r P a ra m e tric S e c tio n is o rg a n iz e d b y a s c e n d in g P o w e r ( w a tts ), fo llo w e d by a s c e n d in g Vz {v o lts ) G e n e ra l Notes-. 1. in fo rm a tio n o n c o n ta c tin g M icroserns D iv is io n s c a n be o b ta in e d o n th e ba c k c o v e r c? th is -"atafoy 2. T y p e s p e c ifie , Spec Sheet ID (W) 11487 13008 13009 3819 3820 3821 2114 2115 5360 5361 5362 5363 8269 8270 8271 10066
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DO-213AA TA 8270 H Siemens+MTT+95+A+12+N DO-35 JANTXV1N758AUR-1 MLL75BA MLL758A-1 1N5736B
Abstract: FREQ. RANGE (MHz) Outline Drawing ISOLATION (dB) L Typ. Min. fL-fU 10-800 28 M Typ. Min. 25 26 L = low range [fL to 10 fL] INSERTION LOSS (dB) ABOVE 9.0 dB U Typ. Min. 22 25 20 PHASE UNBALANCE (Degrees) L Typ. Max. M Typ. Max. 0.6 1.0 0.9 1.5 L M U Max. Max. Max. U Typ. Max. AMPLITUDE UNBALANCE (dB) L M U Max. Max , 17.78 G .187 4.75 H 3.00 76.20 J .35 8.89 D E .250 5.75 6.35 146.05 K .660 Mini-Circuits
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ZBSC-8-82 UU1268 ZBSC-8-82-S M127604 ED-13009/2

transistor j 13009-2

Abstract: 13009-2 . Electrical Specifications ISOLATION (dB) FREQ. RANGE (MHz) Outline Drawing L Typ. Min. fL-fU 10-800 28 M Typ. Min. 25 26 L = low range [fL to 10 fL] PHASE UNBALANCE (Degrees) AMPLITUDE UNBALANCE (dB) L M U Max. Max. Max. L M U Max. Max. Max. INSERTION LOSS (dB) ABOVE 9.0 dB U Typ. Min. 22 25 20 L Typ. Max. M Typ. Max. U Typ. Max. 0.6 1.0 , 1.62 41.15 C .70 17.78 G .187 4.75 H 3.00 76.20 J .35 8.89 D E .250 5.75
Mini-Circuits
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transistor j 13009-2 13009-2 transistor 13009-2 j 13009-2 M1149 transistor j 13009-2 data sheet 2002/95/EC M114913
Abstract: is ta n c e 1 > 5GQ Quality class 2 > 5GQ Quality class 3 > 5GQ Quality class In itia l in , tu r e M o u ld in g m a te ria l C o n ta c t m a te ria l C o n ta c t fin is h S h e , ,99 Part numbers S o c k e t c o n n e c t o r t in - p la t e d - s o ld e r p in a n g le d , ABZKU N C SN 164 A 13009 X CDF 1 5 ABZKUNCSN C D F 15 A B Z K M C S N 164 A 1 2 9 7 9 X , g c o n n e c t o r t in - p la t e d w it h g r o u n d in d e n t - s o ld e r p in a n g le d -
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Abstract: federal and defense communication · communication system FREQ. RANGE (MHz) fL-fU 10-800 L Typ. Min. 28 , . 26 22 U Typ. Min. 25 20 PHASE UNBALANCE (Degrees) L M U Max. Max. Max. 2.0 4.0 9.0 AMPLITUDE UNBALANCE (dB) L M U Max. Max. Max. 0.2 0.3 0.5 L Typ. Max. 0.6 1.0 M Typ. Max. 0.9 1.5 U Typ. Max. 1.8 2.8 L = low range [fL to 10 fL] M = mid range [10 fL to fU/2] U = upper range [fU/2 to fU , 8.89 D E .250 5.75 6.35 146.05 F .810 20.57 H 3.00 76.20 K .660 16.76 wt grams 300 Mini-Circuits
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transistor j 13009-2

Abstract: ZBSC-8-82-S ) L Typ. Min. 10-800 28 M Typ. Min. 25 26 L = low range [fL to 10 fL] INSERTION LOSS (dB) ABOVE 9.0 dB U Typ. Min. 22 25 20 PHASE UNBALANCE (Degrees) L Typ. Max. M Typ. Max. 0.6 1.0 0.9 1.5 L M U Max. Max. Max. U Typ. Max. AMPLITUDE UNBALANCE (dB) L M U Max. Max. Max. 1.8 2.8 M = mid range [10 fL to fU/2] 2.0 4.0 9.0 , 76.20 J .35 8.89 D E .250 5.75 6.35 146.05 K .660 16.76 F .810 20.57 wt grams
Mini-Circuits
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Abstract: qualifications. fL-fU ISOLATION (dB) L Typ. Min. 10-800 28 M Typ. Min. 25 26 L = low , UNBALANCE (Degrees) L Typ. Max. M Typ. Max. 0.6 1.0 0.9 1.5 L M U Max. Max. Max. U Typ. Max. AMPLITUDE UNBALANCE (dB) L M U Max. Max. Max. 1.8 2.8 M = mid range [10 fL to , 4.75 H 3.00 76.20 J .35 8.89 D E .250 5.75 6.35 146.05 K .660 16.76 F .810 , -8-82+ ED-13009/2 HY/TD/AM 100615 Mini-Circuits Mini-Circuits
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Abstract: . RANGE (MHz) fL-fU 10-800 L Typ. Min. 28 25 + RoHS compliant in accordance with EU Directive (2002/95 , U Typ. Min. 25 20 Outline Drawing INSERTION LOSS (dB) ABOVE 9.0 dB L Typ. Max. 0.6 1.0 M Typ. Max. 0.9 1.5 U Typ. Max. 1.8 2.8 PHASE UNBALANCE (Degrees) L M U Max. Max. Max. 2.0 4.0 9.0 AMPLITUDE UNBALANCE (dB) L M U Max. Max. Max. 0.2 0.3 0.5 L = low range [fL to 10 fL] M = mid range , 4.75 B 1.62 41.15 H 3.00 76.20 C .70 17.78 J .35 8.89 D E .250 5.75 6.35 146.05 K .660 16.76 F .810 Mini-Circuits
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1044-06

Abstract: D E F G H J .500 .500 .180 .100 .080 .115 .060 .040 .540 12.700 12.700 4.572 2.540 2.032 2.921 1.524 1.016 13.716 K .060 1.524 L M N P Q R S T .070 1.778 .100 .135 .135 .115 .140 .070 .150 2.540 3.429 , 129.17 130.09 3.40 3.15 2.76 2.21 2.97 2.68 2.29 1.75 2.19 1.60 0.76 -0.87 -37.12 -36.84
Mini-Circuits
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1044-06 ROS-EDR5368
Abstract: Outline Drawing E 12 11 10 9 PCB Land Pattern J D TYP L K SQ TYP Demo Board MCL P/N: TB , ) DENOTES COPPER LAND PATTERN FREE OF SOLDER MASK Outline Dimensions ( inch mm ) A B C D E F G H J K L , -94.68 -96.66 -104.12 -109.81 -113.46 -117.69 -119.42 -122.16 -123.85 -125.33 -128.78 -130.09 -133.14 Mini-Circuits
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ROS-2510-219 CK605 TB-10 PL-012 100KH

12533 6

Abstract: Drawing E 12 11 10 9 PCB Land Pattern J D TYP L K SQ TYP Demo Board MCL P/N: TB-10 Suggested PCB , PATTERN FREE OF SOLDER MASK Outline Dimensions ( inch mm ) A B C D E F G H J K L M N P Q R S T wt , -117.69 -119.42 -122.16 -123.85 -125.33 -128.78 -130.09 -133.14 -134.80 -137.64 -139.36 *at 25oC unless
Mini-Circuits
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12533 6
Abstract: -08023 Barcelona 23 ® (3)2120419 + 4340566 f f l] 50467 EXI (3)2111271 SWEDEN AB E. Westerberg Spjutvagen , ASSMANN Electronic C o m p o n e n ts Vertrieb Deutschland Vertretergebiete 1,2 und 7 , Schuffel 3 58513 Ludenscheid ® (0 23 51) 5 54-118 M (0 2351)554-154 E. G. Hannemann 55 , ! Program survey 7 ASSMANN A g en ts D is trib u to rs Electronic C o m p o n e n ts AUSTRALIA , )772412 AUSTRIA ASSMANN ELECTRONIC GmbH Innerhofer Str. 2 A-8045 Graz ® 0043/316/6939140 M l 0043 -
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CH-6318 E-08940 E-08023 S-17526 CH-8010 TR-06410

P13009

Abstract: PL130-09 PACKAGE COMPLIANT) 8 PIN SOP ( dimensions in mm ) SOP-8L Symbol A A1 B C D E H L e Min. 1.47 0.10 0.33 0.19 4.80 3.80 5.80 0.38 Max. 1.73 0.25 0.51 0.25 4.95 4.00 6.20 1.27 1.27 BSC A A 1 B e C L D E H , temperature range PART NUMBER PL 130-09 X C PART NUMBER TEMPERATURE C=COMMERCIAL (0°C to 70
Micrel Semiconductor
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PL130-09 P13009 QFN16L QFN-16L PL130-09QC-R PL130-09SC PL130-09SC-R P130-09

12533 6

Abstract: ROS-2510-219 Outline Drawing E 12 11 10 9 PCB Land Pattern J D TYP L K SQ TYP Demo Board MCL P/N: TB , ) DENOTES COPPER LAND PATTERN FREE OF SOLDER MASK Outline Dimensions ( inch mm ) A B C D E F G H J K L M , -117.69 -119.42 -122.16 -123.85 -125.33 -128.78 -130.09 -133.14 -134.80 -137.64 -139.36 *at 25oC unless
Mini-Circuits
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Abstract: METALLIZATION SOLDER RESIST Outline Dimensions ( inch mm ) A B C D E F G H J K L M N P Q R S T wt. .500 .500 , -123.85 -125.33 -128.78 -130.09 -133.14 -134.80 -137.64 -139.36 *at 25oC unless mentioned otherwise Mini-Circuits
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D 13009 K

Abstract: J 13009 - 2 8 DRAWING MADE IN T H I R D ANGLE P R O JECT IO N 7 R E L E A S E D FOR P U B L I C A T I O N , . BOARD AFTER A P L L I C A T I ON DUE TO MYLAR THICKNESS. A L L P A R T S A S S E M B L E D IN M E X I C O MUST BE S T A M P E D " A S S Y IN M E X I C O " . WORD " M E X I C O " C A N B E S U B S T I T U T E D O N L Y W H E R E P A R T S I Z E P R O H I B I T S " A S S Y IN M E X I C , PART NO SECTION Z-Z DO NOT S C A L E P R I N T . UNLESS S P E C IF IE D D I M E N S I O N S
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TR 670 9509 1O-FEB-93

13005

Abstract: E 13009 L D S A1 A L L2 b e L1 C b1 Q e1 Millimeters Min Max Inches Min Max A A1 b b1 C D-8 D-14 D-16 E E1 e e1 L L1 L2 S-8 S-14 S-16 4.06 5.08 1.27 , Leads DSquare 1 L Dim b b1 e D1Square A1 A E Millimeters Min Max Inches Min Max A A1 b b1 D28 D44 D128 D144 E28 E44 e L 4.20 4.83 2.29 3.04 0.66 0.81 , Package (L Suffix), 14 & 16 Leads A A1 D c Dim A E1 E 1 2 E2 L b1 S e
Temic Semiconductors
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SSO24 13005 13001 dip40 package D-16 D-20 S-14 SSO20 SSO28 SSO44 SSO64

KSC1330

Abstract: KSC945 TRANSISTORS T O -9 2 S , T O - 9 2 & T O - 9 2 L T Y P E (C o n tin u e d ) \V C E O le FUNCTION GUIDE , KSD5041 T O -9 2 S , T O -9 2 & T O -9 2 L T y p e (VCEo: 8 0 V -4 0 0 V ) ^ \V c E O Ic 50m A 80V , KSE 13009 55 ELECTRONICS TRANSISTORS TO-220F Tÿpe \V C E O FUNCTION GUIDE Ic 1.5A , KST92 KST5550 KST5551 300V 50 ELECTRONICS TRANSISTORS TO-92S, TO-92 & TO-92L TYPE xV C E O IC 20m A (V c e o : 1 2 V - 6 0 V ) FUNCTION GUIDE 12V 15V KSC1395 20V KSK161(10mA
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KSC838 EDX53 BD53A KSE13009F KSC1330 KSC945 KSA733 KSE 13007 L BD139 KSC2223 KSC2715 KSC1623 KSC1674 KSC1674/KSC1675 KSC838/KSC1676

transistor d 13009

Abstract: transistor E 13009 °C Operating and Storage Junction Temperature Range T H E R M A L C H A R A C T E R I S T IC S , , MJE13009 T- 33 E L E C T R I C A L C H A R A C T E R I S T IC S (Tc = 25°C unless otherwise noted , , Ig = 1 Ade) (le 5 5 8 Ade, lg * 1,6 Ade) I l e * 8 Ade, le 8 5 1.6 Ade, T c - 100°C) D Y N A M IC C H , z) Output Capacitance (V c b · 10 Vdc, l£ - 0. f = 0 1 M H z) S W IT C H IN G C H A R A C T E R IS T , (Table 1, Figure 13) Voltage Storage Time Crosiovar Tim s H e " 8 A, V C| amp = 300 Vdc, l B , = 1.6 A, V
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OCR Scan
n752 E 13009 TRANSISTOR motorola e 13009 p E 13009 TRANSISTOR AN719 e8015
Abstract: D E F G H J .500 .500 .180 .100 .080 .115 .060 .040 .540 12.700 12.700 4.572 2.540 2.032 2.921 1.524 1.016 13.716 K .060 1.524 L M N P Q R S T .070 1.778 .100 .135 .135 .115 .140 .070 .150 2.540 3.429 , 114.67 118.36 121.65 124.72 127.52 130.09 132.45 134.67 136.77 138.74 140.61 142.38 144.07 145.63 147.13 Mini-Circuits
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ROS-ED9544/2

transistor d 13009

Abstract: 9622 transistor (GHz) TYPICAL SCATTERING PARAMETERS Q1 V c e = 3 V, Ic = 1 m A , Zo = 50 i l _ , TYPICAL SCATTERING PARAMETERS Q1 V c e = 3 V, Ic = 3 m A , Zo = 50 L I_ FREQUENCY (GHz , TYPICAL SCATTERING PARAMETERS Q1 V c e = 3 V, Ic = 5 m A , Zo = 50 L I_ FREQUENCY (GHz , TYPICAL SCATTERING PARAMETERS Q1 V c e = 3 V, Ic = 7 m A , Zo = 50 L I_ FREQUENCY (GHz , : |S21 e |2 = 9.0 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2: |S21 e |2 = 8.5 dB TYP at f = 2 GHz, V
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9622 transistor t 3866 power transistor UPA832TF NE856 NE685 NE85630 NE68530 UPA835TF
Abstract: -L IN E V E R T IS O C K E T S Data Sheet No. Features: â" 13009 I 5 1 3 /5 0 3 /0 5 1 3 /0 5 0 3 5 1 8 /5 0 8 /0 5 1 8 /0 5 0 8 DIP & SIP S O C K E T S DIP St S IP S O C K E T S , : +44 1908 260008 Papendrecht, Holland T E L:+31 78 615 9465 FAX:+31 786154311 , Styles: C 8 4 /C 9 3 C 81/C 91 & C 8 2 /C 9 2 DIP S O C K E T S D IP S O C K E T S 0% Data Sheet No. 12001 511/501//0501/0511 DIP & S IP S O C K E T S 5118/6008 KEYED SOCKET -
OCR Scan

transistor MJ 13009

Abstract: E13009 Page No. : 5/6 MICROELECTRONICS CORP. TO-247(TO-3P) Dimension G H A DIM A B C D E F G H I J K L M r1 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None H MJ E 13009 D B r1 Date Code Control Code Note: Green label is used for pb-free packing 1 2 3 Pin Style: 1.Base 2.Collector 3.Emitter E M L C I Material: · Lead solder
Hi-Sincerity Microelectronics
Original
HR200202 HMJE13009R transistor MJ 13009 j 13009 to247 13009 to-3p Vcc-125Vdc

E 13009

Abstract: transistor MJ 13009 Page No. : 5/6 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E MJ E 13009 C D Date Code H M I K 3 G N 2 1 Tab O P , Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J L Min. 5.58 8.38 , 3-Lead TO-220AB Plastic Package HSMC Package Code: E Important Notice: · All rights are
Hi-Sincerity Microelectronics
Original
HMJE13009 SEC 13009 tr 2 13009 HE200206

MCL 9603

Abstract: 21957 9 14 INDEX L D TYP E P 40 Operating Temperature -55°C to 85°C Storage , E F G H J K L M N P Q R S T wt. .500 .500 .180 .100 .080 .115 .060 .040 .540 .060 , -137.4 -136.5 -137.0 361.5 507.5 606.7 851.6 1000.0 -130.09 -133.14 -134.80 -137.64
Mini-Circuits
Original
MCL 9603 21957 2539

m2006

Abstract: 11791 A BSO LU T E MAXIMUM RATINGS (TA = 25°C, Z0 = 50 H unless otherwise noted) Rating Supply Voltages , V b ia s ELEC T RIC A L C H ARAC TERISTIC S (V Cc i . V c c a . Characteristics (1) Supply , 1 C2 RF OUT H f50 £2 V CC1 F Vbias + ° VCC2 +° -± '" l C1, C2 - 100 pF Chip , 21.204 20.538 19.624 19.094 18.334 17.594 16.880 16.127 15.438 14.796 14.165 13.555 13.009 12.515 12.004
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m2006 11791 ic 5772 b MRFIC2006 MRFIC2006R2 M2006 MRFIC2004

footprint 8M1-A

Abstract: Special Footprint Instructions. TOP VIEW X W V U T S R P N M L K J H G F E D C B A , 169 Pins Footprint 13001 133 Pins Footprint 13005 124 Pins Footprint 13009 121 Pins
Aries Electronics
Original
footprint 8M1-A

NEC uPA 63 H

Abstract: NEC uPA 63 . TYPICAL PERFORMANCE CURVES(Ta= 25 TO TA L POW ER DISSIPATION v s. AM BIENT T EM P ER A TU R E C) C O L LEC T O R CU R R EN T v s. DC B A S E V O LTA G E I I CL § E, IC o 03 (ft (ft Q , Voltage, V be (V) C O L LEC T O R C U R R EN T v s. EMITTER V O LTAG E DC CU R R EN T GAIN v s. C O , ) Frequency, f (GHz) F E E D B A C K C A P A C IT A N C E v s. C O L LEC T O R TO B A S E V O LTAG E , CLASSIFICATION RANK Marking h FE FB R81 70 to 140 Value E X C L U S IV E N O R T H A M E R IC A N A G
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NEC uPA 63 H NEC uPA 63 NEC uPA 63 a CL 2183 ic 4017 ic operation UPA821TF UPA821TF-T1

E 13007

Abstract: -3 _ l TO-3 _ P O W E R _T R A N S X S T O R S SW IT C H IN G TYPE $ $ $ $ $ $ $ $ , : 1.5 0.1 0.1 : 4 : 1 l 4 4 i : 4 : 1 8 2 e : 3 8 2 : 8 : 3 : 12 : 3 12 3 12 3 ! 12 , F\0 WE R T E AN S I S X O E S ? ? rsn DEISB S.A S W IT C H IN G * Pe r lim a y d ta , E 15 30 15 30 15 30 50 30 50 30 50 5 10 5 10 5 8 8 6 s 6 8 10 10 10 25 , /fi BOX 86/7 BOX 87 BOX 87/9 MJE 13004 MJE 13005 MJE 13006 MJE 13007 M JF. 13008 MJE 13009
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E 13007 84/6X 84/7X

TAG 8434

Abstract: RFIC2006 , Z0 = 50 i l unless otherw ise noted) Characteristics (1) S u pply C u rrent - Total !CC1 'C C 2 I , Isolation O utput Pow er at t .0 dB G ain C om pression 3rd O rde r Intercept Point (Out) 5th O rd e r , 21 Max 55 - - - 26 - Unit mA mA mA mA dB dB dB dB dBm dBm dB m 1. All electrica l , ~ \fr f ^ « 'T ' ^ 4 V CC2 C5 C l , C2 - 100 pF C hip C a pacitor C3, C5 - 1.0 nF C , . 0.0 6 2 " C o pper C lad 0.5 oz. C opper, e r = 10.2 Figure 1. Typical Biasing Configuration
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RFIC2006 TAG 8434

ic 5772 b

Abstract: v >TA = 25°c . , VCC1 v bias +o _L C 1 , C2 - 100 pF Chip Capacitor C3, C5 - 1.0 nF Chip Capacitor C4 - 10 , oz. Copper, e r = 10.2 Figure 1. Typical Biasing Configuration MRFIC2006 2 MOTOROLA RF DEVICE DATA Table 1. Scattering Parameters for 900 MHz T w o -S ta g e PA ( V e c i ' VCC2' V g|/\s , 21.204 20.538 19.824 19.094 18.334 17.594 16.880 16.127 15.438 14.796 14.165 13.555 13.009 12.515 12.004
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MRFIC2006/D 2PHX34801Q-0 22034E

ksd 250v 10a

Abstract: B0X34C -92 & T-92L TYPE (Continued) \y c E O lc 1A 12V 15V 20V 25V KSB564A KSB811 1.5A SS8050 SS8550 2A (10V , B0W94A BDW93B BDW93C BDW94B BDW94C KSE 13008 KSE 13009 36 ELECTRONICS TRANSISTORS T0 , 0.10 0.0 7 7 Part Number IR F Z 1 2 IR L Z 1 0 IR F Z 1 0 IR F Z 2 2 IR L Z 2 0 IR F Z 2 0 IR L Z 3 0 IR F Z 3 2 IR F Z 3 0 IR L Z 4 0 IR F Z 4 2 IR F Z 4 0 SSP60N 05 IR L Z 1 4 IR F Z 1 5 IR F Z 1 4 IR F Z 2 5 IR F Z 2 4 IR L Z 2 4 IR L Z 3 4 IR F Z 3 5 IR F Z 3 4 IR F Z 4 5 IR F Z 4 4 SSP60N 06 IR
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ksd 250v 10a B0X34C ksd 202 ksa 3.3 IR 733 sa992 812/KSC SA812/KSC KSA812/KSC1623 KSC945/KSC815 KSC1675/KSC945 KSA733/KSC945

SO8 1093

Abstract: MRFIC2004 MATERIAL CONDITION. C 8 5 0.25 H E M B M 1 4 h B X 45 _ e q A C SEATING PLANE L 0.10 A1 B 0.25 M C B S A S DIM A A1 B C D E e H h L q MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.18 0.25 4.80 , ­117.91 13.555 ­138.19 0.019 122.40 0.269 ­125.53 975 0.195 ­118.87 13.009 , TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION D AND E DO NOT INCLUDE
Motorola
Original
SO8 1093

M2006

Abstract: MRFIC2004 MAXIMUM MATERIAL CONDITION. C 5 0.25 H E M B M 1 4 h B e X 45 _ q A C SEATING PLANE L 0.10 A1 B 0.25 M C B S A S DIM A A1 B C D E e H h L q MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 , ­117.91 13.555 ­138.19 0.019 122.40 0.269 ­125.53 975 0.195 ­118.87 13.009 , AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT
Motorola
Original

8923 motorola

Abstract: e H h L MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC , 19.094 18.334 17.594 16.880 16.127 15.438 14.796 14.165 13.555 13.009 12.515 12.004 11.517 11.063 10.634 , . MOTOROLA RF DEVICE DATA MRFIC2006 7 PACKAGE DIMENSIONS A 8 D 5 C E 1 4 H 0.25 M B M h B C e A SEATING PLANE X 45 _ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4
Motorola
Original
8923 motorola

CD 5888 CB

Abstract: CD 5888 ic : Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA OUTLINE DIMENSIONS 2.1 ±0.1 - 1 .2 5 ±0.1 (Units in mm) Package O utline TS06 HIGH GAIN: Q1 : |S 21 e |2 = 9.0 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2: |S 21 e |2 = 12.0 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 m A 0.65 A_. < r\D _ 0 -2 2 - , high d yn a m ic range w ith e xce lle nt linearity fo r tw o -sta g e am plifiers. T his de vice is
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UPA831TF CD 5888 CB CD 5888 ic CD 8227 EB 13009 cd 4847 NE681 UPA831TF-T1

CD 5888 CB

Abstract: cd 4847 : Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA OUTLINE DIMENSIONS (Units in mm) Package Outline TS06 (Top View) HIGH GAIN: Q1 : |S 21 e |2 = 9.0 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2: |S 21 e |2 = 12.0 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 m A 0 22 0 05 R À II L e a d s ) 6-PIN THIN-TYPE SMALL , a m ic range w ith e xce lle nt linearity fo r tw o -sta g e am plifiers. T his de vice is also
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IC CD 3207 ha 12185 nt cd 5888 cd 5888 s CD 5888 cb ic ap 6928 NE68130

QFP-44L

Abstract: A23W8000 E1 42 1 21 E A1 A2 Base Plane Seating Plane L A C S B B1 , 44 e1 HE E ~ ~ ~ £c L 1 B 22 Detail F e1 y e A1 D S A , ~ ~ 12 GE 11 E 33 HE 1 A2 y L L1 A1 D See Detail F A GD , A A L LSB Address A-1 Data Out Hi - Z Byte I X X X Hi - Z Hi - Z , 0.590 0.600 0.610 14.99 15.24 15.49 E - 0.550 0.562 - 13.97 14.27
AMIC Technology
Original
A23W8000 QFP-44L A23W8000F A23W8000H A23W8000M A1739 O15/A-1

transistor ap 7686

Abstract: transistor d 13009 : Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA OUTLINE DIMENSIONS (Units in mm) Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 - * j HIGH GAIN: Q1 : |S 21 e |2 = 9.0 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2: |S 21 e |2 = 8.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 10 mA 5 " f l A I I Leads) 6 , T . I ni \ 'l 1 V5 JA 0 * ^ AL=*0 0.1 DESCRIPTION T he U P A 8 32
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transistor ap 7686 ic 7483 PA832TF PA832TF-T1

CD 5888 CB

Abstract: transistor BU 5027 Current at V cb = 10 V, I e = 0 Emitter Cutoff Current at V eb = 1 V, Ic = 0 DC Current Gain1at V ce = 3 V , o ro FREQUENCY _L _ l o o o C O ro IO _k O O C cn ho b C b cn o o o o o o o o o o o o o o b> cn a o o o o o o i . z C O io L o o o co N> ro _L _L ai _ l o o o cn ro b (O 00 © cn o o o o o o o o o , < £ >CO b v l O IO A o> CO ro 05 O 4*. * o o o o o o O o 3 ^ a i^ c r i4 ^ r o O ( b ( » ^ o > c r ii^ 0 3 N > * ^ rO(D*>l
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transistor BU 5027 cd 5220 buffer ic pa831 PA831TF UPA834TF

MT4C16270DJ-7

Abstract: TheO asgotoH efr-Z» W M « I«C SisH H E it M A IG . H sgotohigtvZwlM wDO n w5 got*L W drem , product» or «p»q C l $94. Micron T«cftno>oqy. m e MICRON MT4C16270 256KX 16 DRAM I u w n u n , SPEED 13009 NC CC Nccr wfcr resa: 16 NCÅ' M IX A1CZ A2CX nv« 330012 oc6cr KEY , MT4C18270 RM. 10TM b l l l S M T 0 0 1 1 1 1 2 OST Micron Toctmotogy. Inc. f«wrv«« ttwright toctM , a WRITE cycle, selectin g D Q l through DQ16. If WE goes LOW prior to CAS goin g LOW, the output
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MT4C16270DJ-7 MT4C1027Q

ic 5219 8mm

Abstract: transistor 2sc 4977 gain Q1 : |S21e|z = 9.0 dB TYP. @f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2 : |S21 e|z = 8.5 dB TYP. @f = 2 , on-chip (2SC 4226,2SC 4959) o' o o - CM C\J 1= 1 GHz, V c e = 3 V , Ic = 7 mA ! = 2 GHz, V ce = , Current Gain vs. Collector Current ¿100 e 'm O ) 1 50 o o 20 10 0.5 1 5 10 50 Collector current lc(mA) Collector current lc(mA) X (3 ? C I a. j= S s ? l JZ c ca n c , -161.35 -170.46 -178.60 174.04 167.50 161.38 156.04 150.72 146.09 141.52 137.65 133.69 130.09 126.52
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ic 5219 8mm transistor 2sc 4977 TRANSISTOR 2sC 6090 2sc 1364 transistor 2sc 6090 2sc 2706 2SC4226 2SC4959 PA835TF PA832TF-T

Leach relay M83536

Abstract: MS25271-D1 www.masterdistributors.com www.peerlesselectronics.com www.em.avnet.com Qualified Products Listing Ta b l e o f , MIL-PRF-6106 MIL-PRF-39016 E - 28 VAC, 400 Hz -002 Standard MIL part L - 3.0%/10,000 , w w w. l e a c h i n t l . c o m Leach Type Leach MIL-qualified Products MS Number Leach , 4 5 · w w w. l e a c h i n t l . c o m X-A1C-300L, M Leach MIL-qualified Products MS Number , -300L, M ( 7 1 4 ) 7 3 6 - 7 5 9 9 · F a x ( 7 1 4 ) 6 7 0 - 1 1 4 5 · w w w. l e a c h i n t l . c o m
Leach International
Original
Leach relay M83536 MS25271-D1 M83536 M83536/10-024 M39016-6-109L MS27400 F-57430 D-86738 5/2004/2K

sem 5025

Abstract: on 5297 transistor c l l o c h a n g e w il h o u l n o lic e . Docum ent No. P12690EJ1V0D S00 (1st edition) Date , a l p rop erty righ ts of th ird p a rtie s by or a risin g from use o f a device d e scrib e d , or o th e r in te lle c tu a l p ro p e rty rig h ts of NEC C o rp o ra tio n or o thers. W hile NEC , ndard", "S p e c ia l", and "S p e c ific ". The S p e c ific q u a lity grade a p p lie s only to d e , u ip m e n t, a u d io and v is u a l e q u ip m e n t, h om e e le c tro n ic a p p lia n c e s , m
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sem 5025 on 5297 transistor NEC JAPAN 2415 LA 7687 a La 7833 la 7687 PA821TF

85500 transistor

Abstract: st 85500 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · LOW C O ST · S M A LL AND U L T R A S M A LL S IZ E P A C K A G E S · LOW V O LTA G E/LO W C U R R E N T O PER A TIO N · HIGH GAIN BANDW IDTH P R O D U C T : fTof 12 GHz . N O ISE F IG U R E S O F 1.5 d B A T 2.0 GHZ . SIX P A C K A G E S T Y L E S O F F E R E D · A V A IL A B L E IN T A P E & R E E L 18 (SOT 343 STYLE) NE685 , r 0.6 2 ·0 .0 5 (A L L L E A D S ) \ \ \ 3 ï -EE 01 5 1_ )ï * Cr 0.6 \ \ \ \ l
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85500 transistor st 85500 LM 7209 P 13009 0708 P 13009 0803 0384 NE68S18 2SC5015 NE68519 2SC5010 NE68S33 2SC4955

3007W2SAM99A10X

Abstract: 007W2 styles complete the product offering. Combination D-SUB C o n n e c t o r s Industry standard , mounting Front panel mounting Shell size 6| 2 A ± 0,13 B ± 0,13 C ± 0,13 D ± 0,13 E , 15.80 Combination D-SUB C o n n e c t o r s Part Number Creator 3 003W3 S X X 6 1 A 1 O X , notice. 6| 4 Combination D-SUB C o n n e c t o r s Technical informations Skin effect , D-SUB C o n n e c t o r s Pin configuration ­ Mating side of socket connector Shell size 1
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3007W2SAM99A10X 007W2 27W2 003W3SXX99A10 13W6 017W2SAM99A10

transistor sr 13009

Abstract: sr 13009 Gain Bandwidth Product vs. Collector Current 10 V ce = 3 V f = 1 GHz ` N , -a 1 E to , 106.05 103.52 V ce = 3 V, fc = 3 mA, Zo = 50 f l S11 MAG .90 .83 .75 .70 .65 .62 .60 .59 .59 .59 , 141.52 137.65 133.69 130.09 126.52 123.26 120.27 117.15 114.27 111.71 109.21 106.70 104.47 102.28 MAG , 0 f l FREQUENCY GHz .10 .20 .30 .40 .50 .60 .70 .80 .90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 , 3-PARAMETERS Q2 V ce = 3 V, Ic = 5 mA, Zo = 50 f l FREQUENCY GHz ,10 .20 .30 ,40 .50 .60 .70 .80
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transistors W 5753 apa831 1997N 2SC4227 PA834TF PA831TF-T1 P12723EJ1VQDS00

DK 13001

Abstract: catalog 1308940 10614 24 AWG Flat Shield, Unfilled 7724 E 2664 13004 Catalog 1308940 Revised 5-03 , internal terminator Style 5 = Without eyelet 13009 Catalog 1308940 Revised 5-03 www.tycoelectronics.com , -500-0457-1 D-621-0469-L DK-602-0156-N-2 DK-602-0157-N-2 DK-621-0411-P DK-621-0412-P DK-621-0434-1P TMS-SCE , Pin Socket Pin Socket Pin Socket D-621-0453(-L) D-621-0469(-L) D-621-0477(-L) D-621-0461(-L) D-621-0457(-L) D-621-0473(-L) D-621-0481(-L) D-621-0465(-L) D-621-0454-(-L) D-621-0470-(-L) D-621-0478-(-L) D
Tyco Electronics
Original
MIL-STD-1553B DK 13001 catalog 1308940 raychem catalog termination kit MIL-STD-1553B connector DK-621 Catalog 1308940 revised 5-03 03K-P D-621-F03K-S D-621-F03K-P DK-621-E102-TS DK-621-E102-TP

014e1

Abstract: cce 7100 ._ C a l i f o r n i a E a S tC m L a b O fa tO r iC S NE685 SERIES ABSOLUTE MAXIMUM RA1'INGS1(Ta , 11.752 10.100 8.988 6.892 5.176 3.217 0.8 1.0 1.5 2.0 2.5 3.0 4.0 V c e = 2 .5 V , l c = 1 . 0 , 0.834 0.996 1.100 1.146 23.088 16.703 13.851 12.976 11.309 10.255 9.405 6.713 4.768 V c e = 3 .0 V. l , RECOMMENDED P.C.B. LAYOUT 2 9± 0 2 I 095 _ÌL 2 -t-0.1° ^ -0 0 5 ^ A L LL E A D S ) -+-EEI , 15 -01 +0 2 0 4 -0 0 5 {L E A D S 2, 3 4 ) 2 9±02 G 95 0 85 i : T' T E
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014e1 cce 7100 br 8764 bf 0252 ha 14052 NE68518 NE68533 NE68539/39R 2SC4957 NE68518-T1 NE68519-T1

ic HS 2272

Abstract: tg 56700 M§ * - T ^ C M O ) e v i IO o d tó C M O 0 0C » a 8 C M L Oh -o >o oooooo * " C M8 C Os * " in , * ^ ' 1 8 8 8 8 8 8 8 8 8 8 w ip h* n g f e n s y~ o> s o N i f l i f l w w w q II < = > d , , high gain, low voltage, and low current are prim e concerns. 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) 30 , 1000 1.08 11.0 1500 1.31 7.5 5.0 2000 1.65 Vc e = 2.5 V, Ic = 3.0 mA 500 19.3 1.05 800 15.8 1.12 1000 , 1.15 8.9 1000 1.25 7.4 Vc e = 1 V, Ic = 0.25 mA 500 1.10 9.5 800 1.20 7.1 1000 6.2 1.45 V c e = 1 V
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ic HS 2272 tg 56700 IC tt 3034 8m80 0732 gi 9405 NEG85 15-I005 NE68530-T1 NE68533-T1 NE68539-T1 NE68539R-T1

HE 85500

Abstract: st 85500 Parameters CCB CC E Lb Le CCBPKG C cepkg C b epkg Lbx Lex L ex 68530 0.13e-12 0.14e-12 0.41 e-9 1,43e-9 , · SM A LL AND ULTRA SM ALL SIZE PACKAGES · LOW VO LTA G E/LO W CU R R EN T OPERATION · HIGH GAIN , 2.4 GHz where low cost, high gain, low voltage, and low current are prim e con cerns. 30 (SOT 323 , Collector Cutoff Current at V c b = 5 V , I e = 0 mA Emitter Cutoff Current at V eb =1 V, Ic = 0 mA Feedback , opt ( t a = 25 C) Rn/50 Vc e = 1,0 V, lc = 0.25 mA (dB) Ga (dB) topt MAG ANG
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HE 85500 EN 123400 HE 85500 TRANSISTOR mje 13009 st 9535 fr 3709 z

85500 transistor

Abstract: NPN Transistor 13009 SILICON TRANSISTOR rs e b m : u t E n o DESCRIPTION T t n . e NO g par r n a g E i t s n e AS i e e E d w h L s w P llo a r e t o o n f a f r d e Th his ded fo office t from mmen sales l o l c a e c r CHARACTERISTICS ELECTRICAL e s a Ple ils: a det 8539R NE6 18 (SOT 343 STYLE) · HIGH GAIN BANDWIDTH PRODUCT: fT , 17.827 12.151 9.237 8.325 7.042 6.200 5.757 3.431 21.800 15.831 13.009 12.063 10.534 9.326 8.624 5.724
California Eastern Laboratories
Original
NPN Transistor 13009 k 13009 c 5929 transistor BR 13009 NE68518-T1-A NE68519-T1-A NE68530-T1-A NE68533-T1-A NE68539-T1-A

ntc 100-20

Abstract: NTC 2322 642 6471 H2 H1 L CCB281 d P For dimensions see Table 1. Fig.1 Component outline , (mm) H1 (mm) H2 max (mm) L (mm) P (mm) Tmax (mm) MIN. MAX. 0.6 ±0.06 - , "Steinhart and Hart"): R (T) = R ref × e 2 A+B/T+C/T +D/T then: × 100 % or Z X + Y. 3 , 235.60 3.12 2.45 -5.49 -5.28 -5.09 -4.90 -4.73 -4.57 -4.42 -4.27 91.34 73.51 130.09 , P T p D p h Od H W2 W1 W h H1 L W0 A D0 F t P0
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ntc 100-20 NTC 2322 642 6471 ntc 2322 642 104 ntc 2322 642 6472 ntc 6101 NTC 4,7 1235 Thermistors B25/85-

THERMISTORS SCK 055

Abstract: ntc 2322 642 6472 H2 H1 L CCB281 d P For dimensions see Table 1. Fig.1 Component outline , (mm) H1 (mm) H2 max (mm) L (mm) P (mm) Tmax (mm) MIN. MAX. 0.6 ±0.06 - , "Steinhart and Hart"): R (T) = R ref × e 2 A+B/T+C/T +D/T then: × 100 % or Z X + Y. 3 , 235.60 3.12 2.45 -5.49 -5.28 -5.09 -4.90 -4.73 -4.57 -4.42 -4.27 91.34 73.51 130.09 , P T p D p h Od H W2 W1 W h H1 L W0 A D0 F t P0
BC Components
Original
THERMISTORS SCK 055 2322 634 21 333 23/ntc 100-20 2322 156 321 2322 640 6.. NTC thermistors, accuracy line 2322 702 6102

6681 - 250

Abstract: ntc 2322 642 6 /4/6. B L d P For dimensions see Table 1. T H2 H1 CCB281 Fig.1 Component , ±0.5 5.0 d (mm) 0.6 ±0.06 0.6 ±0.06 H1 (mm) MIN. MAX. 2.0 ±1.0 4.0 H2 max (mm) 6.0 6.0 L (mm) 24 ±1.5 , the following interpolation laws (extended "Steinhart and Hart"): R (T) = R ref × e A+B/T+C/T +D/T 2 , 1006.93 752.69 569.05 434.80 335.56 261.41 205.46 162.84 130.09 104.70 84.87 69.26 56.88 47.00 39.06 32.64 , H1 W2 W1 W W0 L A D0 P0 P1 F t direction of unreeling detail A MSA208 1E pitch 2322
BC Components
Original
6681 - 250 ntc 2322 642 6 2322 640

THERMISTORS SCK 055

Abstract: 2322 644 , , , , , , , , , , B handbook, 4 columns T H2 H1 L CCB281 d P For dimensions see , ) MIN. L (mm) P (mm) Tmax (mm) MAX. 6.331 to 6.474 3.3 ±0.5 0.6 ±0.06 - , (extended "Steinhart and Hart"): Z = complete resistance deviation, R (T) = R ref × e 2 A+B/T+C , 569.05 434.80 335.56 261.41 205.46 162.84 130.09 104.70 84.87 69.26 56.88 47.00 39.06 32.64
BC Components
Original
2322 644 2322 731 ntc 33 747 BC 263-1 BC 2222 ntc 2622 610 1

2322 640 6 NTC

Abstract: 2322 640 6. NTC thermistors, accuracy line H1 L CCB281 d P For dimensions see Table 1. Fig.1 Component outline 2322 640 6.331 to , ) H2 max (mm) L (mm) P (mm) Tmax (mm) MIN. MAX. 0.6 ±0.06 - 2.0 ±1.0 6.0 , interpolation laws (extended "Steinhart and Hart"): R (T) = R ref × e 2 A+B/T+C/T +D/T then: × 100 , 2.45 -5.49 -5.28 -5.09 -4.90 -4.73 -4.57 -4.42 -4.27 91.34 73.51 130.09 104.70
BC Components
Original
2322 640 6 NTC 2322 640 6. NTC thermistors, accuracy line MLC380 213513-3 2322 634 4406 a

D880 voltage regulator

Abstract: B0244C KSC5039 KSC2335 KSC5337 K S E 13007 K S E 13009 KSC2751 KSC5338 KSC5020 KSC5021 KSC5321 KSC5024 KSC5025 , 50 170 130 095 1.2 1.2 6 6 10 10 50 100 110 50 30 70 100 50 30 70 100 1 1.3 (mA) (mA) V csisa t), Y*e , Polarity NPN KSA1175 KSC2785 PNP Concition V ce lc hFE Condition lc le V c e (sat , 4 *10 4 3 3 3 3 2 2 *4 *2 *2 *2 Condition V cE h f= e MAX 650 150 150 360 700 700 360 500 , ) C ob (pF) V ceo Ore (dB) MIN $12 &10 15 14 Condition V ce lc hpE NF(dB) l*oc
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OCR Scan
KSD601 B0244C BD64C D880 voltage regulator TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR KST06 KST05 BCW71 BCX70G BCX70H BCX70J

NTC 2322 642 6471

Abstract: ntc 100-20 MIN. MAX. H2 max L P Tmax H2 H1 6.338 to 6.221 6.331 to 6.474 5.0 0.6 ±0.06 1.0 - 4.0 2.0 ±1.0 6.0 6.0 24 ±1.5 24 ±1.5 2.54 2.54 4.0 3.0 L 3.3 0.6 ±0.5 ±0.06 , : D T = -TC X ^ Ê Y ^ Z = Ê 1 + - ¥ 1 + - ­1 Ë 100¯ Ë 100¯ ¥ 100 % or Z ª X + Y , and Hart"): R (T) = R ref ¥ e (A + B § T + C § T + D § T ) 2 3 (1) (2) 2 R 3 R ^ ­1 R T (R) = Ê A 1 + B 1 ln - + C 1 ln - + D 1 ln -Ë R ref R R ¯ ref ref where: A, B, C
Vishay BCcomponents
Original
239.50 02499 B25/85-VALUE JW113

transistor E 13009

Abstract: 13009 TRANSISTOR equivalent x 14 x 1.4 mm SOT407-1 c y X A 51 75 50 76 ZE e E HE A A2 (A 3) A1 w M bp Lp pin 1 index L 100 detail X 26 1 25 ZD e v M A w , 16.25 15.75 15.75 L Lp v w y 1 0.75 0.45 0.2 0.08 0.08 Z D (1) Z E (1 , brightness P2_2/PWM1 contrast P2_3/PWM2 saturation P2_4/PWM3 hue P2_5/PWM4 volume (L , SRAM. P = PSEN I = Instruction (program memory contents) L = Logic level LOW, or ALE Q =
Philips Semiconductors
Original
SAA5360 SAA5361 teletext decoder 80C51 LQFP100 PH2369 SAA5360HL SCA76 R24/03/

NTC 2322 642 6471

Abstract: 2322 156 diode Vishay 6.221 5.0 H1 6.331 to 6.474 3.3 0.6 ±0.5 ±0.06 B T L H1 d H2 L , "Steinhart and Hart"): R (T) = R ref × e 2 TC = temperature coefficient (1) 2 R 3 R ­1 R T (R , PARAMETERS FOR DETERMINING NOMINAL RESISTANCE VALUES B25/85 (K) NAME TOL. B VALU E% A B (K , = 4090K 11 mat D. with Bn = 4190K 12 mat E. with Bn = 4370K 13 mat F. with Bn = 4570K Notes , 162.84 130.09 104.70 84.87 69.26 56.88 47.00 39.06 32.64 27.42 23.16 19.65 16.74 14.33
Vishay BCcomponents
Original
2322 156 diode Vishay ntc 50/20 2381 640 6.223 105K2 2222 733 marking r25 2002/96/EC

ntc 2322 642 6472

Abstract: 2322 640 6.. NTC thermistors, accuracy line 6.221 5.0 H1 6.331 to 6.474 3.3 0.6 ±0.5 ±0.06 B T L H1 d H2 L , "Steinhart and Hart"): R (T) = R ref × e 2 TC = temperature coefficient (1) 2 R 3 R ­1 R T (R , PARAMETERS FOR DETERMINING NOMINAL RESISTANCE VALUES B25/85 (K) NAME TOL. B VALU E% A B (K , = 4090K 11 mat D. with Bn = 4190K 12 mat E. with Bn = 4370K 13 mat F. with Bn = 4570K Notes , 162.84 130.09 104.70 84.87 69.26 56.88 47.00 39.06 32.64 27.42 23.16 19.65 16.74 14.33
Vishay BCcomponents
Original
transistor 0882 AN 6682 thermistor 2322 642 0510 ntc 1,0 2381 640 6.. NTC thermistors, accuracy line Coloured band marked devices

TFK diodes BYW 76

Abstract: tfk U 264 E F f Af Fc fT G Gps bF E /B 1 /B2 /(BR | lc / /CAV /CB0 /C S E /CM la l0S' l , E O ^CB ^CE V CEO V CER ^CERM ^C Esat ^DD ^DS V EB2 v r V ,s ^RW M ^SS vz l , 55/C 13 " Q u a lifie d s e m ic o n d u c to r 0.03.0.11 BZX 55/C 12 â'¢ â'¢ A v a i l a b l e as 0.03.0.1 BZX 55/C 11 h ig h e r v o lta g e s a v a ila b le o n re q u e s t , < 5 56.0 on req u est 6 1 N 4739 A w h i l e m a i n t a i n i n g t h e le a d 5
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OCR Scan
TFK diodes BYW 76 tfk U 264 TFK diodes 148 tfk 804 byw 56 equivalent 13009 Jt 43 BYF51 BYT53C

ntc 100-20

Abstract: NTCLE T DERATING AND TEMPERATURE TOLERANCES P (%) 100 Power derating curve H2 H1 L d P , 0.5 d 0.6 ± 0.06 0.6 ± 0.06 H1 MIN. 1.0 MAX. 4.0 2.0 ± 1.0 H2 max. 6.0 6.0 L 24 ±1.5 24 ± 1.5 P 2.54 , the following interpolation laws (extended "Steinhart and Hart"): R (T) ­ R ref × e (A + B / T + B , 335.56 261.41 205.46 162.84 130.09 104.70 84.87 69.26 56.88 47.00 39.06 32.64 27.42 23.16 19.65 16.74 , d D0 L H H1 W0 W1 A W W2 P0 P1 F direction of unreeling t Taping on reel according
Vishay BCcomponents
Original
NTCLE NTCLE100 NTCLE100E3

ntc 2322 642 6472

Abstract: ntc 100-20 to 6.221 5.0 H1 6.331 to 6.474 3.3 0.6 ±0.5 ±0.06 B T L d H2 L P Tmax max MIN. 0.6 ±0.06 MAX. 1.0 4.0 6.0 24 ±1.5 2.54 4.0 , R ref × e (2) ref × 100 % or Z X + Y. TC = temperature coefficient (1) 2 R 3 R , 752.69 569.05 434.80 335.56 261.41 205.46 162.84 130.09 104.70 84.87 69.26 56.88 47.00 39.06 , D p h Od H W2 W1 W h H1 L W0 A D0 F t P0 P1
Vishay BCcomponents
Original
104K1 228599 2322 724 #2742 marking 2188 T 2109 ntc 2322 640 302

k2381

Abstract: K 3596 L 0 - 40 d 0 55 85 P 125 Tamb (°C) 2381 640 6.338 to 6.474 PHYSICAL , 3.3 ± 0.5 www.vishay.com 76 H1 d H2 MAX L P Tmax 4.0 6.0 24 ±1.5 , "): R(T) ­ R ref × e 2 3 (A + B / T + B / T + C / T ) (1) 2 R 3 R ­1 R T (R) = A 1 + , 130.09 104.70 84.87 69.26 56.88 47.00 39.06 32.64 27.42 23.16 19.65 16.74 14.33 12.32 10.64 , T p D p h Od H W2 W1 W h H1 L W0 A D0 F t P1 P0
Vishay BCcomponents
Original
k2381 K 3596 21070 NTC 503 3950 09863 B0681

B 722 P

Abstract: ntc 100-20 H1 d MIN. MAX. H2 max L P Tmax H2 H1 6.338 to 6.221 6.331 to 6.474 5.0 0.6 ±0.06 1.0 - 4.0 2.0 ±1.0 6.0 6.0 24 ±1.5 24 ±1.5 2.54 2.54 4.0 3.0 L 3.3 0.6 , ref × e (A + B / T + C / T + D / T ) 2 3 (1) (2) 2 R 3 R ­1 R T (R) = A 1 + B 1 ln - , 1006.93 752.69 569.05 434.80 335.56 261.41 205.46 162.84 130.09 104.70 84.87 69.26 56.88 47.00 39.06 32.64 , H H1 W2 W1 W W0 L A D0 P0 P1 F t direction of unreeling detail A MSA208 1E pitch
Vishay BCcomponents
Original
B 722 P K 713 04639 01677

228599

Abstract: b0333 L 0 - 40 d 0 55 85 P 125 Tamb (°C) 2381 640 6.338 to 6.474 PHYSICAL , 3.3 ± 0.5 www.vishay.com 76 H1 d H2 MAX L P Tmax 4.0 6.0 24 ±1.5 , "): R(T) ­ R ref × e 2 3 (A + B / T + B / T + C / T ) (1) 2 R 3 R ­1 R T (R) = A 1 + , 130.09 104.70 84.87 69.26 56.88 47.00 39.06 32.64 27.42 23.16 19.65 16.74 14.33 12.32 10.64 , T p D p h Od H W2 W1 W h H1 L W0 A D0 F t P1 P0
Vishay BCcomponents
Original
b0333 02645

CFS0303-SB-0G00

Abstract: celeritek LNA -105.37 -109.64 -112.87 -116.52 -120.62 -123.18 -127.79 -130.09 -134.47 -137.19 -140.44 -143.72
Mimix Broadband
Original
CFS0303-SB CF003-03 CFS0303-SB-0G00 CFS0303-SB-0G0T PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 celeritek LNA 22 GA TIN COPPER WIRE

15165

Abstract: TRANSISTOR BD 137-10 -120.62 -123.18 -127.79 -130.09 -134.47 -137.19 -140.44 -143.72 -146.74 -149.58 -152.76
Mimix Broadband
Original
PB-CFS0303-SB-00C0 15165 TRANSISTOR BD 137-10 2304 sot 353 PB-CFS0303-SB-00D0 900MH 1900MH 2400MH 3500MH

TRANSISTOR BD 137-10

Abstract: CFS0303-SB-0G0T -109.64 -112.87 -116.52 -120.62 -123.18 -127.79 -130.09 -134.47 -137.19 -140.44 -143.72 -146.74 -149.58 , the part. Mimix Broadband is a registered trademark of Mimix Broadband, Inc. Mimix is an e qual , will be used in the part number for Matte Tin finished RoHSCompliant components and "L" will be used
Mimix Broadband
Original
bd 9473 transistor 2440

celeritek LNA

Abstract: CFS0303-SB-0G00 -105.37 -109.64 -112.87 -116.52 -120.62 -123.18 -127.79 -130.09 -134.47 -137.19 -140.44 -143.72
Mimix Broadband
Original
TRANSISTOR BD 168

rotary

Abstract: Oak Grigsby L E C T R I C A L Current and Voltage M A T E R I A L Insulation - Glass , STANDARD YES STANDARD M E C H A N I C A L Stop Strength Mechanical Life Detenting , E L E C T R I C A L D Current and Voltage M A T E R I A L Insulation - , STANDARD YES STANDARD M E C H A N I C A L Stop Strength Mechanical Life Detenting , 30,31 OPEN 1.875" 2 - 12 Page Number Construction Diameter Positions E L E C T R I C
Electroswitch
Original
rotary Oak Grigsby OAK GRIGSBY rotary Electroswitch d4c-9 oak grigsby encoders Electroswitch series 24

13009 Jt 43

Abstract: pj 72 I X I E o- t>°â'"! -{>H>- £ o- lo co uj c/> 3 < â'" co 5 < < ^r io to .CO , , and U oily, ul VelTs of bottom brazed ceramic packages ( i .e. . confi gur.tion 2 of c .se outlines , range- - -65 C to +l/b t Maximum power dissipation, PD- - - - 200 mW Lead temperature (soldering , ~gToup number 40 (see MIL-M-38510 , appendix E). 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and , and II failures shall ^e cumulative for determining PDA c. The class B devices PDA shall be in
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OCR Scan
pj 72 4006A Darfon 4006a 13003 HJ TO 92 E 13007 0 13001 LZ MIL-M-38510/57D MIL-M-38510/57C 4006B 4014B 4015B 4021B

HD637B01VOP

Abstract: HD63701VOP E mail for the inquiry. The customer who uses an old version can use the onerous up-grade service , (7C245A) 12.5 1CC(7C291) 12.5 13008 12.5 1CC(7C291A) 12.5 13009 12.5 1CC(7C292) 12.5 13008 12.5 1CC(7C292A) 12.5 13009 12.5 1CC(7C293A) 12.5 13009 AF9704 21.10 21.10 21.10
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Original
HD637B01VOP HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 AF-9700 AF9706 AF9707 AF9721 AF9722 24DIP

ksd 302 250v, 10a

Abstract: irf 5630 (collector basis reverse B bias) to be quoted , or UC 0 and UC 0 (collector emitter reverse bias). E E With , , brackets. Amplification The DC current gain B (hF ) or the short-circuit current gain I3 ( h j are E , " comporte plus de 19000 differents transistors et FET qui sont tous p re s e n ts parordre alphanumerique , difference) end Etages finaux FET Transistor e effet de champ FET-depl. Transistor e effet de champ type , blocage) ou UC 0 et UC 0 (collecteur-emetteur-tension de B E blocage). Les FET sont toujours indiques en
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OCR Scan
ksd 302 250v, 10a irf 5630 transistor 2SB 367 bf199 IRF 3055 transistor ESM 2878 ZTX751 ZTX3866 2SD2182 2SD1642 2SC4489

UA78HGSC

Abstract: SL490DP tio n C L 8 960 M icro w ave In tru d er D e te c to r The CL8960 Microwave Intruder Detector (MID , T h e s e 4 B its C o n ta in th e H e x a d e c im a l C o d e o f th e K ey AO CE * D A TA A V A IL A B L E (ca n b e u se d a s IN TE R R U P T) I M R ead K e y b o a rd D a ta , In fo rm atio n IC L 7106C P L â'" (LC D ) 3 â'™/a D igit D ig ita l P an el M e te r IC antf IC , N Y O TH E R D E V IC E A P P L IC A T IO N S C A N BE F O U N D IN T H E T E C H N IC A L P U B L
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OCR Scan
UA78HGSC SL490DP TCA280A equivalent TCA280A ne5534h ML929DP LM78L05ACZ LM78L12ACZ LM78L15ACZ LM340LAZ-5 LM340LAZ-12 LM340LAZ-15

TRANSISTOR tip122 CHN 949

Abstract: 2N5157 3-48 2N 6543 3-52 3-215 3-56 A L P H A N U M E R IC IN D E X â'" C R O S S -R E F E R E N C E , 3-20 2N 3584 2NS758 3-20 3-116 A L P H A N U M E R IC IN D E X â'" C R O S S -R E F E R E N , replacem ent is necessary. 1-4 A L P H A N U M E R IC IN D E X â'" C R O S S -R E F E R E N C E (C o , necessary. 1-5 2N6043 2N6044 2N6045 A L P H A N U M E R IC IN D E X â'" C R O S S -R E F E R E N , necessary. 1-7 3-199 3-199 A L P H A N U M E R IC IN D E X â'" C R O S S -R E F E R E N C E (C o n
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OCR Scan
TRANSISTOR tip122 CHN 949 2N5157 13003 Transistor NPN Power TO 126 A/transistor Eb 13003 BM transistor Eb 13003 BM JE3300

UAA2001

Abstract: 1N9388 II, M A C R O C E L L I, M A C R O C E L L II, Macro-T, Macro-X, M A C S b u g , M A T E C , M D O S , M D TL, M ECL, M E C L 10 0 0 0 , M E C L II, M E C L III, M E C L 1 0 K H , M H T L, M ICR O , e m o ry C ir c u its C M O S L o g ic C ir c u its B I P O L A R IN T E G R A T E D C IR C U IT S L in e a r C ir c u its 6 L in e a r In te rfa ce C ir c u its LSI 8 B ip o la r M e m o rie s 9 L o g ic C ir c u it s 10 T E L E C O M M U N I C A T I O N C IR C U IT S
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OCR Scan
UAA2001 1N9388 micromodule m68mm19 74ALS643 MC8500 wiring diagram audio amplifier ic 6283 2U6545 24P2U 28R2U 30R2U 32R2RU 32R2U

M143206EVK

Abstract: hall marking code A04 Compiler and DesignWave are trademarks of Synopsys, Inc. Echelon, LON, L o n W o r k s and N e u r o n are , SGS-Thomson Microelectronics. L o n B u il d e r and L o n T a l k are trademarks of Echelon Corporation , Introduction Motorola Semiconductor Business Groups W N e t w o r k in g & C onsum er S ystem s G roup (CSG) S e m ic o n d u c t o r T RANSPORTATION C o m p u t in g S y s t e m s C o m po n en ts G roup S ystem s G roup (SCG) (TSG) G roup (NCSG) ir e l e s s S u b s c r ib
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OCR Scan
M143206EVK hall marking code A04 2N3773 audio amplifier diagram S/BIP/SCB345100/B/30/10/ferrite ei core 33A M68HC705X16 ABB inverter motor fault code 2PHX14226-31

c5088 transistor

Abstract: transistor C3207 PIC9000 CA3183E ULN-2023A ULN-2003A(S E L) MPQ2369 SL2364C M PQ6426 ULN2003D VN0106K6 M PQ7051 M , (SEL) BD435 2N6837 HXTE-102 2N3771 MRF5711 L 2N4401 MJE521K TIP122 2N5836 2SC1623 2N6259 , MMBT5551 L SSM-2210S MPS3866 M RF5943 BU505 MM3007 21\11671A 2N3436 2N2646 SFE793 21\1167113 , U1897E J270 SD213 ITS4066 J107 J112 I RF431 I RF520 2N4119A MTM15N50 M BF4416 L IRF9130 , CA3081 E CA3146E M PQ3725 AD821 (SPEC) ULN2082A CA3127E LM3018AH CA3097E ULN-2003A CA3082E
Hewlett-Packard
Original
c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A LM103-2 CA3026 CA3018 MPQ6842 CA3046 CA3045

transistors JX 6822 A

Abstract: MATSUA compressor R12 . Access Data On-Line! Use the Motorola SPS World Marketing Internet Server to a c c e s s M o t o r o l , ) . viii Chapter One Selector G u id e , . 3.0-1 Section One: Selector Guide, Section Two: Data Sheets VOLUME II D e v ic e In d e x (A lp h a n u m e ric ) . viii , SOLUTIONS DEVICE DATA < >M O T O R O L A ® Wireless Semiconductor Solutions Device Data - Vol. I and
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OCR Scan
transistors JX 6822 A MATSUA compressor R12 am/transistors JX 6822 A scf 101 saw filter gte MC145202 addendum motorola power transistor 7752 MCH12140 MCK12140 2PHX11136Q-21

JRC 45600

Abstract: YD 803 SGS Aktualisierungspaket, lose Blotter - ISBN 0 9 0 4 9 4 4 82 4 Band 3: INTEGRIERTE SC H A L T U N G E N - Ausgabe 1 4 , L A T A N N E R R ESEARCH A C C M IC R O E L E C T R O N IC S A C E R L A B O R A T O R IE S INC. A C R IA N IN C .* A C S E L E C T R O N IC S Ltd. A CT EL C O R P. ACUMOS A D A M S -R U SS E L L -SD I A D A P T E C IN C ADAPTIVE L O G IC A D V AN C E DATA T E C H N O LO G Y A D V A N C E L O G IC ADVANCED ANALO G A D V A N C E D C O N T R O L C O M P O N E N T S , INC. A D V A N C E
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OCR Scan
JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 ZOP020 ZOP021 ZOP023 ZOP022 ZOP024 ZOP025

EATON CM20A

Abstract: A5 GNE mosfet Table of Contents N E W A R K E L E C T R O N IC S â'Where serving you begins even before you , PRICES ARE NET F.O.B. SHIPPING POINT AND DO NOT IN C LU D E F E D E R A L , STATE, OR LOCAL TAXES , COMPARISON PURPOSES ONLY. W A R R A N T Y A N D D IS C L A IM E R S IN C E THE SELLER, NEWARK ELECTRONICS , ERCHANTA­ B ILITY OR O F F IT N E S S FOR ANY PARTICULAR PURPOSE. SIN CE SELLER C A N N O T C O N T R O L , ANY C O N S E Q U E N T IA L OR IN ­ D IR EC T DAM AGES. SIN CE SELLER IS ONLY A C T IN G AS A D IS
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OCR Scan
EATON CM20A A5 GNE mosfet Hall sensor 44e 402 smd transistor marking 352a FTG 1087 S TRIAC BCR 10km

h05 suppressor diode smd marking code

Abstract: ic 5304 smd 8 pin VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book NTC THERMISTORS vishay , Components V I S H AY I N T E R T E C H N O L O G Y, I N C . DATA B O O K ntc thermistors w w w , ) Bandswitching PIN P rod u ct L istings Zener and Suppressor Diodes Zener (single, dual) TVS , = NiSn E4 = AgPd 0 5 E 3 R25 VALUE 103 = 10 x 103 102 = 10 x 102 101 = 10 x 101 , =1% G=2% H=3% J=5% K = 10 % F M T B25/85 VALUE U (ultra low): B25/85 < 3000 L (low
Vishay Dale
Original
h05 suppressor diode smd marking code ic 5304 smd 8 pin 8 pin SMD ic 2068 datasheet sod80 smd zener diode color band t 3866 mosfet 4433 mosfet VSE-DB0069-0610

transistor NEC D 882 p

Abstract: nec d 882 p datasheet of CIN with wiring capacitance (estimated wire length capacitance) taken into consideration (l = 10
NEC
Original
transistor NEC D 882 p nec d 882 p datasheet SKR 50 a1275 MOS 6581 OPENCAD CMOS Block library 78K/0 V851TM V853TM V30MXTM V30MZTM NB85E

vx 1937

Abstract: LIM EMS 4.0 :()954-0633 / 5 E BFI ELECTRONICA: (091)255-9503 Twx:310-3718-717 / -478 FSCIE DIMES: 91430 Igny. Tel:(l , INDEXES PO Box 470, London, SE1 2 8AF United Kingdom Tel/fax: + 44(0)l 81 -852-2309 Semidex@aol.com , . Publie par : SEMICON INDEXES B.P. 470 Londres SE12 8AF Royaume-Uni Tel/fax: + 44(0)l 81 -852-2309 , BAUELEMENTE GmbH DIP DIONICS INC. DIN DIRECTED ENERGY INC. DIR E EBAUCHES SA, DEPT SEMICONDUCTORS* EBA ECG , FUJI ELECTRIC CO. FJI FUJITSU LTD FUJ G G E ELECTRONICS (LONDON) LTD * GEC GD RECTIFIERS Ltd. GDR
Renesas Electronics
Original
vx 1937 LIM EMS 4.0 A12745E NB85E901 mos 6550 A13761E A13195EJ5V0DM

IGBT M16 100-44

Abstract: Kt606 (414) 781-2450 Minneapolis 336 Hoover Street N E Minneapolis, Minn. 55413 (612) 331-6350 Telex 29-0682 , 2028 E 46th Street Cleveland. Ohio 44103 (216) 361-4700 Telex 98-0176 Cincinnati 9799-G Princeton Rd
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OCR Scan
IGBT M16 100-44 Kt606 transistor 8BB smd Transistor B0243C ASEA HAFO AB SEMICON INDEXES VV276

stk 412 -420

Abstract: Ignitron BK 496 /B connection cable and power supply · Dimensions (L x W x H): 125mm x 200mm x 89mm · Weight
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OCR Scan
stk 412 -420 Ignitron BK 496 CD4004AE STK 419 150 STK 419 140 STK 412 150 equivalent 2G700 018C1

NEC 720114

Abstract: mobile charger circuit using 13001 L e x iq u e d e d o n n d e s E n c ic lo p e d ia d a ti V e r g le ic h s ta b e lle C o m p a , tiv a L e x ic o n d e d a to s A n s c h lu f i P in D e s s in s d e s D esegni E squem as z e ic h n u n g e n a s s ig n m e n ts ra c c o r d e m e n ts d i te r m in a l! d e c o n e x id n P in -C o d e P in - C o d e P in - C o d e P in -C o d e P in -C o d e K la p p ta fe l , In h a lts v e r z e ic h n is T a b le o f c o n te n ts S o m m a ire In d ic e In d ic e
Digitus
Original
NEC 720114 mobile charger circuit using 13001 marvell 88sx7042 online ups service manual back-ups ES 500 RTL8111DL 88SX7042 2010-II DC-44400/ DC-45400 DC-53501/ DC-53601/ DC-53701

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SC906 performance encoders with a choice of Single-turn (-E, -S) or Multi-turn (-V, -M) high resolution feedback , counts per revolution (-E and -V) for smooth performance (MPL-A/B15xx and MPL-A/B2xx motors). ·
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OCR Scan
Transistor 2SA 2SB 2SC 2SD 2SC906 2SA1281 2SK596 bup 3130 C3885A PA63H MPA68H BD241

heidenhain rod 456

Abstract: 2090-UXPC-D09xx 325 E. Southern Tempe, AZ 85282 (602) 968-7441 4002 E. Grant Road Tucson, AZ 85712 (602) 325-1574 , 5308 W. 124th St. Alsip, IL 60658 (312) 371-9000 49 E. Downer Place Aurora, IL 60505 (312) 844-0400 , . McArthur Oklahoma, OK 73122 (405) 495-5000 8740 E. 11th St. Tulsa, OK 74112 (918) 832-7004 TEXAS (Cont , . Allentown, RA 18104 (215)434-7171 25 E. Twelfth St. Erie, RA 16501 3466 Progress Dr. Cornwells Hts., PA
Allen-Bradley
Original
heidenhain rod 456 2090-UXPC-D09xx Heidenhain ROD 456 - 2500 pin rod 323 heidenhain HEIDENHAIN rod 529 HEIDENHAIN ROD 420 GMC-SG001O-EN-P GMC-SG001N-EN-P

0608, motherboard 845 GV ML

Abstract: 240V AC/TRANSFORMER bck 2801 TABLE OF CONTENTS Effective April â'" September 1966 T E C H N I C A L D A T A S E C T I 0 N S SYMBOL/CODE EXPLANATIONS . For use if , (non-JEDEC) whose ryK L characteristics are not the same. This manufacturer-identifying symbol (assigned by , 7 5N3. 9 IRC 239 1/4A68,A,E ASC 5272b 1/4M17Z, MOTA 3002 .25N39 IRC 4438 1/4Z7 5D, DIC 5423 . 7 , 945 MOI 1AC6.8,A,E ASG 94 2s 1G8 PWC 19392 10, 5 10,5 SYL 1AC7. 5, A, E ASG 1145s 1G9.1Z,A
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OCR Scan
0608, motherboard 845 GV ML 240V AC/TRANSFORMER bck 2801 SN75512 CE100F22 relay btk 1012 SN7401

20680 JRC

Abstract: Germanium Diode aa116 INCLUDES A B C D E F G H I J SMT INCLUDES SMT INCLUDES Digital POL Converter and Chassis , INCLUDES SMT INCLUDES SMT INCLUDES SMT 0 SMT INCLUDES K L M N O 1 SMT INCLUDES
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OCR Scan
20680 JRC Germanium Diode aa116 MD1010 110B6 Germanium itt Marconi 2026 service manual