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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

E 13003 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

E 13003 TRANSISTOR

Abstract: c s 13003 TRANSISTOR ^EBO *c ^ C M T E 13002 300 600 9 1,5 3 0.75 0.75 38 150 - 6 5 .+ 1 5 0 T E 13003 400 700 V V V A A A A W °C °C T1.2/789.0888 E 2764 a-01 243 IS I - - - . - - TELEFUNKEN ELECTRONIC 17E D ODOUEfl 3 AL(S6 T-33-11 Min. Typ. Max. TE 13002 · TE 13003 , TELEFUNKEN ELECTRONIC TIiLllFlliKiKIK] electronic Crtfuv»T e c h n o te c«5 17E D TE 13002 TE 13003 a^QO'te DDORb'S? : AL GG Silicon NPN Power Transistors Applications: Switching
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E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T-33-II 0IN41 I3-75 15A3DIN

13003 TO-92

Abstract: PC 13003 TRANSISTOR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic Package E CB , 13003 A B 15-19 CSL 13003 B TYP MAX UNIT 1.1 µs 0.7 4.0 µs µs C E F 18-22 21-25 24-30 CSL 13003 C CSL 13003 E CSL 13003 F , SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic Package E CB Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE
Continental Device India
Original
13003 TO-92 PC 13003 TRANSISTOR PC 13003 13003 TO 92 PACKAGE TRANSISTOR 318 13003 all transistor 13003 CSL13003261103E C-120

13003 TRANSISTOR

Abstract: REGULATOR 13003 . B 15 -19 C 18-22 E 21-25 F 24-30 MARKING CDB 13003 CDC 13003 CDE 13003 CDF 13003 CDA 13003 *Pulse Test:- PW=300µs, Duty Cycle=2% Continental Device India Limited , Manufacturer CD13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package EC B Applications , CD13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package EC B ELECTRICAL CHARACTERISTICS , DIM 10.8 2.4 2.7 0.7 0.9 E 1 10.5 D S 7.8 C B 7.4 B P
Continental Device India
Original
13003 TRANSISTOR REGULATOR 13003 x 13003 TRANSISTOR transistor cd 13003 13003 application notes 13003 TO 126 PACKAGE CD13003R

TR 13003 transistor

Abstract: F 13003 ship any of the groups according to production availability. MARKING C A 13003 C B 13003 µs 0.15 C 18-22 E 21-25 F 24-30 C C 13003 C E 13003 C F 13003 *Pulse Test , Manufacturer C13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package EC B Applications , SILICON POWER TRANSISTOR TO126 Plastic Package EC B ELECTRICAL CHARACTERISTICS (Ta=25 deg C , 0.7 0.9 E 1 10.5 D S 7.8 C B 7.4 B P MAX A N MIN 2.25
Continental Device India
Original
TR 13003 transistor F 13003 B 13003 TR 13003 E13003 X 13003 C13003R

X 13003

Abstract: F 13003 (off)=5V, tc tfi TC=100ºC A B C 11 -16 15 -19 18-22 0.75 0.15 E F 21-25 24-30 C A 13003 C E 13003 tsv C B 13003 C C 13003 µs µs C F 13003 *Pulse Test:- PW , C13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package Applications Suitable for Lighting , 5.0 1.0 UNIT V V mA mA mA Page 1 of 4 C13003 NPN SILICON POWER TRANSISTOR TO126 , 0.9 E 2.25 TYP. F S 1 7.8 C B 7.4 B P MAX A N MIN 0.49
Continental Device India
Original
transistor 13003 13003 13003 d g 13003 cd 13003 13003 L

W 13003 TRANSISTOR

Abstract: 13003 availability. B 15 -19 C 18-22 E 21-25 F 24-30 MARKING CDB 13003 CDC 13003 CDE 13003 CDF 13003 CDA 13003 *Pulse Test:- PW=300µs, Duty Cycle=2% Continental Device India , Certified Manufacturer CD13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package Applications , SILICON POWER TRANSISTOR TO126 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless , A C DIM 10.5 10.8 2.4 2.7 D 0.7 0.9 E 2.25 TYP. F S 1
Continental Device India
Original
13003 TRANSISTOR npn W 13003 to126

PC 13003 TRANSISTOR

Abstract: x 13003 TRANSISTOR UNIT 1.1 µs 0.7 4.0 µs µs C E F 18-22 21-25 24-30 CSL 13003 C CSL 13003 E CSL 13003 F CSL13003Rev261103E Continental Device India Limited Data Sheet , SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic Package E CB Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE , V V V V NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR
Continental Device India
Original
transistor 13003 k NPN transistor 13003 B/PC 13003 TRANSISTOR

F 13003

Abstract: TR 13003 transistor (off)=5V, tc tfi TC=100ºC A B C 11 -16 15 -19 18-22 0.75 0.15 E F 21-25 24-30 C A 13003 C E 13003 tsv C B 13003 C C 13003 µs µs C F 13003 *Pulse Test:- PW , SILICON POWER TRANSISTOR TO126 Plastic Package Applications Suitable for Lighting, Switching , 5.0 1.0 UNIT V V mA mA mA Page 1 of 4 C13003 NPN SILICON POWER TRANSISTOR TO126 , 0.9 E 2.25 TYP. F S 1 7.8 C B 7.4 B P MAX A N MIN 0.49
Continental Device India
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13003 TRANSISTOR 126 package PIN DETAILS 13003 TRANSISTOR npn TR 13003 A ISO/TS16949

x 13003 TRANSISTOR

Abstract: transistor cd 13003 =0.2A, VBE(off)=5V, tc tfi TC=100ºC A B C 11 -16 15 -19 18-22 0.75 0.15 E F 21-25 24-30 C A 13003 C E 13003 tsv C B 13003 C C 13003 µs µs C F 13003 *Pulse Test:- , C13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package Applications Suitable for Lighting , 5.0 1.0 UNIT V V mA mA mA Page 1 of 4 C13003 NPN SILICON POWER TRANSISTOR TO126 , 0.9 E S 7.8 C B 7.4 B P MAX A N MIN 2.25 TYP. F 1 0.49
Continental Device India
Original

SR 13003 b

Abstract: transistor SR 13003 availability. MARKING ton VCC=125V, IC=1A, IB1=0.2A, IB2=0.2A A 11-16 CDT 13003 A XY B 15-19 CDT 13003 B XY C 18-22 CDT 13003 C XY E 21-25 F 24-30 CDT 13003 E XY CDT 13003 F XY X= Year of Manufacturer Code Y= Month Code *Pulse Test:- PW=300µs, Duty Cycle , SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package Applications Suitable for Lighting , Sheet Page 1 of 4 NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package ELECTRICAL
Continental Device India
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SR 13003 b transistor SR 13003 SR 13003 TRANSISTOR SR 13003 SR 13003 D SR 13003 K CDT13003R 230306D

13003 TRANSISTOR

Abstract: E 13003 TRANSISTOR 13003 Transistor (NPN) www.hsin.com.sg HSiN Semiconductor Pte Ltd 13003 TO-220 TRANSISTOR NPN FEATURES Power dissipation PCM : 1.5 WTamb=25 Collector current ICM : 1.5 A , 35-40 TO-220-3L PACKAGE OUTLINE DIMENSIONS A D C1 E E1 F L1 b1 A1 L b e C e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max , 0.012 0.021 c1 1.710 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E
HSiN Semiconductor
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13003 NPN Transistor features T 13003 transistor HSiN Semiconductor Pte transistor D 1710 13003TRANSISTOR 13003 npn 100TYP 540TYP

transistor sw 13003

Abstract: sw 13003 Applications Electronic lam p ballast circuits Sw itch-m ode pow er supplies T D 1 3002 · T D 13003 1 B a s e 2 C o l le c t o r 3 E m it te r T D 1 3 0 0 2 · T D 1 3 0 0 3 -S M D 1 B a s e 2 C o l le c t o r 3 E m itte r Absolute Maximum Ratings Tease = 25°C, unless otherw ise specified Param eter C ollector-em itter voltage Test C onditions type TD 13002 TD 13003 T D 13002 TD 13003 E m itter-base voltage C , Transistor Features · · · · HIG H SPEED technology Glass passivation Very short sw itching tim es Very low
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transistor sw 13003 sw 13003 Sw 13003 c d 13003 x transistor x 13002 E 13003 b TRANSISTOR TD13002 TD13003 T0252

CDT13003

Abstract: cdt 13003 . MARKING ton VCC=125V, IC=1A, IB1=0.2A, IB2=0.2A A 11-16 CDT 13003 A XY B 15-19 CDT 13003 B XY C 18-22 CDT 13003 C XY E 21-25 F 24-30 CDT 13003 E XY CDT 13003 F , SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package Applications Suitable for Lighting , 4 NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package ELECTRICAL , -220 Plastic Package TO-220 Plastic Package B C E DIM MIN MAX 16.51 A 14.42 B 9.63 10.67 3.56
Continental Device India
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cdt 13003 13003 A 13003 h 13003A

PC 13003 TRANSISTOR

Abstract: PC 13003 TRANSISTOR circuit TRANSISTOR Applications Suitable for Lighting, Switching Regulator and Motor Control E ABSOLUTE MAXIMUM , . 10-16 MARKING CSL 13003 A B 15-19 CSL 13003 B TYP MAX UNIT 1.1 ms 0.7 4.0 ms ms C E F 18-22 21-25 24-30 CSL 13003 C CSL 13003 E CSL 13003 F TO-92 Plastic Package DIM A B C D E 1 K 2 F G H D 3 D SEC , 1.14 1.40 1.20 1.40 12.70 - K L 1.982 2.082 M 1.03 1.20 All dimensions are in mm E
Rectron Semiconductor
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PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR application 13003 F 13003 application

13003 TO-92

Abstract: PC 13003 TRANSISTOR PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic Package E , EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSL13003 TO-92 Plastic Package E CB , 13003 A B 15-19 CSL 13003 B TYP MAX UNIT 1.1 µs 0.7 4.0 µs µs C E F 18-22 21-25 24-30 CSL 13003 C CSL 13003 E CSL 13003 F , Package TO-92 Plastic Package C D E A Uncontrolled DIM A B 1 K 2 F G H D
Continental Device India
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13003F 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 transistor TO-92 CSL13003R 261103E

act30bht

Abstract: 13003 transistor power supply circuits cost transistor such as `13003 (VCBO = 700V) or `13002 (VCBO = 600V) to be used for a wide AC input , . APPLICATION INFORMATION IC EXTERNAL POWER TRANSISTOR The ACT30 allows a low-cost high voltage power NPN transistor such as `13003 or `13002 to be used safely in flyback configuration. The required , switching frequency and with 400mA or 800mA current limit. The E version (SOT23-5) can be configured for , driver outputs that can drive the emitter of an external high voltage NPN transistor or N-channel
Active-Semi
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act30bht 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor

act30bht

Abstract: 13003 transistor power supply circuits transistor or N-channel MOSFET. This emitter-drive method takes advantage of the high VCBO of the transitor, allowing a low cost transistor such as `13003 (VCBO = 700V) or `13002 (VCBO = 600V) to be used for a wide , EXTERNAL POWER TRANSISTOR The ACT30 allows a low-cost high voltage power NPN transistor such as `13003 or , switching frequency and with 400mA or 800mA current limit. The E version (SOT23-5) can be configured for , . Thus, the ACT30+'13002 or `13003 combination meet the necessary breakdown safety requirement even
Active-Semi
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act30aht flyback 13003 act30bh act30 application 13003 charger transistor TO-92 13002

13003 transistor SMD

Abstract: transistor smd XH T e m ic TELEFUNKEN Semiconductors TD13002 · TD13003 Silicon NPN High Voltage Switching Transistor Features · · · · HIGH SPEED technology Glass passivation Very short switching times Very low , Applications Electronic lamp ballast circuits Switch-mode power supplies 94 8965 TD13002 · T D 13003 1 , voltage Type TD13002 TD13003 TD 13002 TD 13003 Emitter-base voltage Collector current Collector peak , °C, unless otherwise specified Parameter Junction case Test Conditions T e m ic TELEFUNKEN Semiconductors
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13003 transistor SMD transistor smd XH d13003 al 13003 electronic ballast 13003 transistor al 13003 TD13003-SM

PC 13003 TRANSISTOR

Abstract: SH 13003 K SH 13003 NPN SILICON TRANSISTOR D-PAK High Voltage Power Transistor D-PACK For surface , Collector Dissipation (Tc=25° C) Junction Temperature Storage Temperature Symbol VCBO VCEO V e bo Rating , Saturation Voltage Symbol VCECKSUS) Iebo hFE VcE(sat) Test Condition lc=5mA, Ib =0 V e b =9V, Ic =0 V c e =5V, Ic =0.5A V c e =1V, lc=2A lc=0.5A, Ib =0.1A Ic =1A, Ib =0.25A lc=1.5A, Ib =0.5A Ic =0.5A, Ib =0.1A Ic =1A, Ib=0.25A V c b =10V, f=0.1M H z V c e =10V, lc=0.1A Vcc=125V, lc=1A Ib i =0.2A, Ib 2=-0.2A Min
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SH 13003 SH 13003 TRANSISTOR voltage REGULATOR 13003 e 13003 SH 13003 npn

transistor eb 13003

Abstract: transistor EN 13003 A K SH 13003 NPN EPITAXIAL SILICON TRAN SISTO R D-PAK HIGH VOLTAGE POW ER TRANSISTOR D-PACK , e = 5 V , Ic = 0.5A Min 400 8 5 Typ Max 10 40 0.5 1 3 1 1.2 Unit V uA hpE V CE , ELECTRONICS KSH13003 STATIC CHARACTERISTIC NPN EPITAXIAL SILICO N TRANSISTOR . D C CU RR EN T GAIN ! CURRENT 0 « % # 2* -.n f2 5 0 g y t e = l0 0 n £ " lB=50m A g W» COLLECTOR te 0m A 0 1 2 3 4 5 iE, C O L L E C T O R C U R R E N T Ves (V), C O L L E C T O R -E M IT T E R
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transistor eb 13003 transistor EN 13003 A transistor Eb 13003 A transistor EN 13003 eb 13003 st 13003 TRANSISTOR npn
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