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Part Manufacturer Description Datasheet BUY
LT3585EDDB-0#PBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3485EDD-3#TRPBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-3#TRPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-3 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-1#TRMPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3485EDD-1#TR Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

Discrete IGBTS

Catalog Datasheet MFG & Type PDF Document Tags

Discrete IGBTS

Abstract: Discrete IGBTS 900v SG75S12S Discrete IGBTs Dimensions SOT-227(ISOTOP) Dim. Millimeter Min. Max. Inches , 2500 V Isolation Voltage Viso 1min, f = 50Hz . SG75S12S Discrete IGBTs IGBT , . . 1.25 1.90 nH m SG75S12S Discrete IGBTs Diode Characteristic Values Parameter (Tj , °C/W 0.550 °C/W . SG75S12S Discrete IGBTs Fig. 1 Typ. Output Characteristics at Tvj , . 4 Typ. Gate charge Characteristi . SG75S12S Discrete IGBTs Fig. 5 Typ. Switching
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Discrete IGBTS Discrete IGBTS 900v SEMPO ELECTRONIC

Discrete IGBTS

Abstract: SOT-227 heatsink SG75S12S Discrete IGBTs Dimensions SOT-227(ISOTOP) Dim. Millimeter Min. Max. Inches , 2500 V Isolation Voltage Viso 1min, f = 50Hz SG75S12S Discrete IGBTs IGBT , °C 1.25 1.90 nH m SG75S12S Discrete IGBTs Diode Characteristic Values Parameter (Tj = 25 , SG75S12S Discrete IGBTs Fig. 5 Typ. Switching Energies per pulse vs on-state current Fig. 6 , current Fig. 8 Typ. Switching times vs gate resistor SG75S12S Discrete IGBTs Fig. 9 Fig
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SOT-227 heatsink

INDUCTION HEATING

Abstract: induction heating ic Discrete Discrete IGBTs BVCES Min (V) IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns , -220 * All specifications are measured at TC=25°C. www.fairchildsemi.com Discrete Discrete IGBTs , * All specifications are measured at TC=25°C. www.fairchildsemi.com Discrete Discrete IGBTs , specifications are measured at TC=25°C. www.fairchildsemi.com Discrete Discrete IGBTs (Continued) BVCES , =25°C. www.fairchildsemi.com Discrete Discrete IGBTs (Continued) BVCES Min (V) IC@100°C (A) VCE(sat) Typ (V
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HGT1N30N60A4D SGF5N150UF INDUCTION HEATING induction heating ic high power Induction Heating HGT1S5N120BNDS SGS5N150UF HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD

Discrete IGBTS

Abstract: RG1425 SG45N12T Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 4.7 , . 1200 o IGES typ. Unit V SG45N12T Discrete IGBTs (TJ=25oC, unless otherwise specified
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RG1425

Discrete IGBTS

Abstract: tab ic SG45N12T Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 4.7 , 2 mA ±100 nA 2.5 V SG45N12T Discrete IGBTs (TJ=25oC, unless otherwise specified
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tab ic

Discrete IGBTS

Abstract: MDA300 SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F Symbol 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Characteristic Values Test Conditions
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MDA300

SG50N06DT

Abstract: SG50N06T SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 , . Unit V 5.0 V 200 uA 1 mA ±100 nA 2.5 V SG50N06T, SG50N06DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Characteristic Values Test Conditions min
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Discrete IGBTS

Abstract: SG23N06DT SG23N06T, SG23N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F Symbol 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , SG23N06T, SG23N06DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Characteristic Values
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MJ 1505

Abstract: Discrete IGBTS SG200N06S Discrete IGBTs C E Dim. Dimensions SOT-227(ISOTOP) Millimeter Min. Max. Inches Min. Max. A B 0.161 0.161 0.169 0.169 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 11.68 8.92 12.22 , 200 TJ=25 C VCE(sat) max. 600 o IGES typ. Unit V SG200N06S Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min
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MJ 1505 PF-465 30uH

Discrete IGBTS

Abstract: SG20N12DT SG20N12T, SG20N12DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 Symbol 0.170 0.212 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , ) max. 1200 o IGES Unit nA 2.5 V SG20N12T, SG20N12DT Discrete IGBTs (TJ
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Discrete IGBTS

Abstract: Tvj-150 SG35N12T, SG35N12DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 , ±100 o uA 5 TJ=25 C V 250 o nA 3.3 V SG35N12T, SG35N12DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min
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Tvj-150

Discrete IGBTS

Abstract: SG25S12DT SG25S12T, SG25S12DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 Symbol 0.170 0.212 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values
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300UH

Abstract: Discrete IGBTS SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG12N06P SG12N06DP Symbol Test Conditions o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 , =15V . SG12N06P, SG12N06DP Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test
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300UH

Discrete IGBTS

Abstract: SG12N06DT SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 Symbol 0.170 0.212 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , o IGES typ. Unit V SG12N06T, SG12N06DT Discrete IGBTs (TJ=25oC, unless otherwise
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250NS120

Discrete IGBTS

Abstract: SG7N06DP SG7N06P, SG7N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG7N06DP SG7N06P Symbol Test Conditions o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 , ; VGE=15V Unit V uA ±100 1.5 nA 1.8 V SG7N06P, SG7N06DP Discrete IGBTs (TJ
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Discrete IGBTS

Abstract: SG12N06DT SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Min. Max. Inches Min. Max. A B E C G C(TAB) 0.780 0.819 0.800 0.845 C D G=Gate, C=Collector, E=Emitter,TAB=Collector 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 Symbol 0.170 0.212 0.216 0.244 1.65 - 2.13 4.5 0.065 - 0.084 0.177 1.0 10.8 , ±100 nA 2.1 V SG12N06T, SG12N06DT Discrete IGBTs (TJ=25oC, unless otherwise specified
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Discrete IGBTS

Abstract: SG15N12DP SG15N12P, SG15N12DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG15N12P SG15N12DP Symbol Test Conditions o Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms V ±20 ±30 VGES VGEM Unit 1200 1200 TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; V 30 15 60 ICM=40 @ 0.8 , Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values
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Discrete IGBTS

Abstract: ICM100 SG50N06S, SG50N06DS Discrete IGBTs C E Dim. Dimensions SOT-227(ISOTOP) Millimeter Min. Max. Inches Min. Max. A B 1.255 0.323 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 , 200 VCE=0.8VCES; VGE=0V; Unit V SG50N06S, SG50N06DS Discrete IGBTs (TJ=25oC, unless
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ICM100 N06DS

Discrete IGBTS

Abstract: DSA0025285 SG50N06S, SG50N06DS Discrete IGBTs C E Dim. Dimensions SOT-227(ISOTOP) Millimeter Min. Max. Inches Min. Max. A B 1.255 0.323 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 , =0V; Unit 1 uA mA ±100 nA 2.5 V SG50N06S, SG50N06DS Discrete IGBTs (TJ=25oC, unless
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DSA0025285

Discrete IGBTS

Abstract: MDA100 SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG12N06P SG12N06DP Symbol Test Conditions o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 , =15V SG12N06P, SG12N06DP Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions
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MDA100
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