500 MILLION PARTS FROM 12000 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
1N5222B_T50A Fairchild Semiconductor Corporation Zener Diode ri Buy
1N5222B_T50R Fairchild Semiconductor Corporation Zener Diode ri Buy
1N5224B_T50R Fairchild Semiconductor Corporation Zener Diode ri Buy

Diode F200A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: IGBT MODULE ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min Typ Max Units Vfm Diode Forward Voltage |f=200A Tc =25 °C - 1.9 2.8 V Tc =100°C - 1.8 - Trr Diode Reverse Recovery Time |f=200A, VR=200V di/dt= -400A/US -400A/US Tc =25 °C - 90 130 nS Tc =100°C - 130 - Irr Diode Peak Reverse Recovery Current Tc =25 °C - 19 25 A Tc , If Diode Continuous Forward Current @ Tc = 25°C 200 A 'fm Diode Maximum Forward Current 400 A Pc ... OCR Scan
datasheet

9 pages,
382.04 Kb

SM2G200US60 diagram induction welding TEXT
datasheet frame
Abstract: Manufacturer SMBH1G200US60 SMBH1G200US60 Preliminary IGBT MODULE ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min Typ Max Units Vfm Diode Forward Voltage |f=200A Tc =25 °C - 1.9 2.8 V Tc =100°C - 1.8 - Trr Diode Reverse Recovery Time |f=200A , Current @ Tc = 25°C 200 A 'cm (1) Pulsed Collector Current 400 A If Diode Continuous Forward Current @ Tc = 25°C 200 A 'fm Diode Maximum Forward Current 400 A Pc Maximum Power Dissipation @Tc = 25 ... OCR Scan
datasheet

9 pages,
380.67 Kb

SMBH1G200US60 dc to dc buck converter 200A igbt buck converter 3V to 300V dc dc converter 300V dc dc STEP DOWN TEXT
datasheet frame
Abstract: Diode Forward Voltage |f=200A Tc =25 °C - 1.9 2.8 V Tc =100°C - 1.8 - Trr Diode Reverse Recovery Time |f=200A, VR=200V di/dt= -400A/US -400A/US Tc =25 °C - 90 130 nS Tc =100°C - 130 - Irr Diode Peak Reverse Recovery Current Tc =25 °C - 19 25 A Tc =100°C - 25 - Qrr Diode Reverse Recovery Charge , If Diode Continuous Forward Current @ Tc = 25°C 200 A 'fm Diode Maximum Forward Current 400 A Pc , Respective Manufacturer SMBL1G200US60 SMBL1G200US60 Preliminary IGBT MODULE ELECTRICAL CHARACTERISTICS (DIODE PART ... OCR Scan
datasheet

9 pages,
381.24 Kb

SMBL1G200US60 DC 300V to 15V converter 5V to 300V dc dc converter 300V dc to dc boost converter 3V to 300V dc dc converter TEXT
datasheet frame
Abstract: . Characteristics of reverse diode ( at Tj =25"C unless otherwise speci fird ) 1 Characteristics 1 tenis Symbols - - • • - Condi tions min. typ. max. Diode forward I F = 200A V F 2.5 on-voltage VCE-0V Reverse recovery i F=200A t r r 350 ■■di/dt = G00A//ts time i , Gi'.'f Thermal - - _ _. _ - R t h (j c) 0.187 Diode. resi ... OCR Scan
datasheet

4 pages,
163.87 Kb

TEXT
datasheet frame
Abstract: ro (j bE — ° -a : .i: cu ) JZ -C REVISIONS G. Characteristics of reverse diode ( at Tj , Condi tions min. typ. max. Diode forward I F = 200A V F 2.5 on-voltage VCE-0V Reverse recovery i F=200A t r r 350 ■■di/dt = G00A//ts time i , Gi'.'f Thermal - - _ _. _ - R t h (j c) 0.187 Diode. resi ... OCR Scan
datasheet

4 pages,
163.87 Kb

TEXT
datasheet frame
Abstract: CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) IGBT MODULE Symbol V fm Characteristics Diode Forward Voltage Test Conditions If=200A Tc =25 °C Tc =100"C Min Typ - Max 2.8 - Units V 1.9 1.8 90 130 19 25 855 1625 - Trr Diode Reverse Recovery Time |F=200A , Voltage Collector Current @ Tc = 25°C Pulsed Collector Current Diode Continuous Forward Current @ Tc Diode , nS - Irr Diode Peak Reverse Recovery Current - 25 - A - Qrr Diode Reverse ... OCR Scan
datasheet

13 pages,
292.69 Kb

SMBL1G200US60 TEXT
datasheet frame
Abstract: 1625 - Trr Diode Reverse Recovery Time |F=200A, VR=200V Tc =25 "C di/dt= -400A/US -400A/US Tc =100°C Tc =25 "C Tc =100"C Tc =25 °C Tc =100"C - 130 - nS - Irr Diode Peak Reverse , Current @ Tc = 25°C Pulsed Collector Current Diode Continuous Forward Current @ Tc = 2 5 °C Diode Maximum , - Preliminary SMBH1G200US60 SMBH1G200US60 ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) IGBT MODULE Symbol V fm Characteristics Diode Forward Voltage Test ... OCR Scan
datasheet

13 pages,
292.32 Kb

SMBH1G200US60 TEXT
datasheet frame
Abstract: 1625 - Trr Diode Reverse Recovery Time |F=200A, VR=200V Tc =25 "C di/dt= -400A/US -400A/US Tc =100°C , Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ Tc = 25°C Pulsed Collector Current Diode Continuous Forward Current @ Tc Diode Maximum Forward Current Maximum Power Dissipation @Tc Operating , - - Preliminary SM2G200US60 SM2G200US60 ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) IGBT MODULE Symbol V fm Characteristics Diode Forward Voltage Test ... OCR Scan
datasheet

13 pages,
293.17 Kb

SM2G200US60 TEXT
datasheet frame
Abstract: SM1016 A5005 Properties] LED Light Emitting Diode LED LED [Parts Led Properties] 7 LED 7 LED 1 ... NEC
Original
datasheet

452 pages,
4878.45 Kb

SM78K RA78K0S RA78K0 e10501 CC78K0S CC78K0 STK 411 230 E TEXT
datasheet frame
Abstract: e10501 Diode LED LED LED 7 LED 7 LED 1 7 LED LED 14 LED 14 LED 1 14 ... NEC
Original
datasheet

478 pages,
3606.54 Kb

digital clock with 7segment F4007 diode LED 355 IE-703002-MC led 7segment IC stk 412 410 ic stk 412 -420 IC stk 412 - 410 ic stk 442 130 tektronix 213 dmm stk 413 430 ic TEXT
datasheet frame