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SEP8706-003 Honeywell Sensing and Control SEP8706 Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package ri Buy
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Diode F200A

Catalog Datasheet Results Type PDF Document Tags
Abstract: Forward Voltage |f=200A Tc =25 °C - 1.9 2.8 V Tc =100°C - 1.8 - Trr Diode Reverse Recovery Time |f=200A, VR=200V di/dt= -400A/US -400A/US Tc =25 °C - 90 130 nS Tc =100°C - 130 - Irr Diode Peak Reverse , Current @ Tc = 25°C 200 A 'cm (1) Pulsed Collector Current 400 A If Diode Continuous Forward Current @ Tc = 25°C 200 A 'fm Diode Maximum Forward Current 400 A Pc Maximum Power Dissipation @Tc = 25°C 830 , Respective Manufacturer SM2G200US60 SM2G200US60 Preliminary IGBT MODULE ELECTRICAL CHARACTERISTICS (DIODE PART ... OCR Scan
datasheet

9 pages,
382.04 Kb

SM2G200US60 diagram induction welding SM2G200US60 abstract
datasheet frame
Abstract: MODULE ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min Typ Max Units Vfm Diode Forward Voltage |f=200A Tc =25 °C - 1.9 2.8 V Tc =100°C - 1.8 - Trr Diode Reverse Recovery Time |f=200A, VR=200V di/dt= -400A/US -400A/US Tc =25 °C - 90 130 nS Tc =100°C - 130 - Irr Diode Peak Reverse Recovery Current Tc =25 °C - 19 25 A Tc =100°C - 25 - , ) Pulsed Collector Current 400 A If Diode Continuous Forward Current @ Tc = 25°C 200 A 'fm Diode Maximum ... OCR Scan
datasheet

9 pages,
380.67 Kb

SMBH1G200US60 dc to dc buck converter 200A igbt buck converter 3V to 300V dc dc converter 300V dc dc STEP DOWN SMBH1G200US60 abstract
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Abstract: Manufacturer SMBL1G200US60 SMBL1G200US60 Preliminary IGBT MODULE ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min Typ Max Units Vfm Diode Forward Voltage |f=200A Tc =25 °C - 1.9 2.8 V Tc =100°C - 1.8 - Trr Diode Reverse Recovery Time |f=200A, VR=200V di , Current @ Tc = 25°C 200 A 'cm (1) Pulsed Collector Current 400 A If Diode Continuous Forward Current @ Tc = 25°C 200 A 'fm Diode Maximum Forward Current 400 A Pc Maximum Power Dissipation @Tc = 25°C 830 ... OCR Scan
datasheet

9 pages,
381.24 Kb

SMBL1G200US60 DC 300V to 15V converter 5V to 300V dc dc converter 300V dc to dc boost converter 3V to 300V dc dc converter SMBL1G200US60 abstract
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Abstract: 1625 - Trr Diode Reverse Recovery Time |F=200A, VR=200V Tc =25 "C di/dt= -400A/US -400A/US Tc =100°C , Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ Tc = 25°C Pulsed Collector Current Diode Continuous Forward Current @ Tc Diode Maximum Forward Current Maximum Power Dissipation @Tc Operating , - - Preliminary SM2G200US60 SM2G200US60 ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) IGBT MODULE Symbol V fm Characteristics Diode Forward Voltage Test ... OCR Scan
datasheet

13 pages,
293.17 Kb

SM2G200US60 SM2G200US60 abstract
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Abstract: ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) IGBT MODULE Symbol V fm Characteristics Diode Forward Voltage Test Conditions If=200A Tc =25 °C Tc =100"C Min Typ - Max 2.8 - Units V 1.9 1.8 90 130 19 25 855 1625 - Trr Diode Reverse Recovery Time |F=200A , Gate-Emitter Voltage Collector Current @ Tc = 25°C Pulsed Collector Current Diode Continuous Forward Current @ Tc Diode Maximum Forward Current Maximum Power Dissipation @Tc Operating Junction Temperature Storage ... OCR Scan
datasheet

13 pages,
292.69 Kb

SMBL1G200US60 SMBL1G200US60 abstract
datasheet frame
Abstract: 1625 - Trr Diode Reverse Recovery Time |F=200A, VR=200V Tc =25 "C di/dt= -400A/US -400A/US Tc =100°C Tc =25 "C Tc =100"C Tc =25 °C Tc =100"C - 130 - nS - Irr Diode Peak Reverse , Current @ Tc = 25°C Pulsed Collector Current Diode Continuous Forward Current @ Tc = 2 5 °C Diode Maximum , - Preliminary SMBH1G200US60 SMBH1G200US60 ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) IGBT MODULE Symbol V fm Characteristics Diode Forward Voltage Test ... OCR Scan
datasheet

13 pages,
292.32 Kb

SMBH1G200US60 SMBH1G200US60 abstract
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Abstract: : cu ) JZ -C REVISIONS G. Characteristics of reverse diode ( at Tj =25"C unless otherwise speci fird ) 1 Characteristics 1 tenis Symbols - - • • - Condi tions min. typ. max. Diode forward I F = 200A V F 2.5 on-voltage VCE-0V Reverse recovery i F=200A t r r 350 , _. _ - R t h (j c) 0.187 Diode. resi sta lice . ... OCR Scan
datasheet

4 pages,
163.87 Kb

datasheet abstract
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Abstract: REVISIONS G. Characteristics of reverse diode ( at Tj =25"C unless otherwise speci fird ) 1 Characteristics 1 tenis Symbols - - • • - Condi tions min. typ. max. Diode forward I F = 200A V F 2.5 on-voltage VCE-0V Reverse recovery i F=200A t r r 350 --di/dt = G00A , - R t h (j c) 0.187 Diode. resi sta lice . - .-. ... OCR Scan
datasheet

4 pages,
163.87 Kb

datasheet abstract
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Abstract: FPB23570CH 1433563 1432126 TRS-R Class H, K and R Fuse Holder Dimensions RF100A RF100A R100A R100A F200A R200A R200A RF400A RF400A R400A R400A F600A F600A ... Original
datasheet

154 pages,
7870.32 Kb

ul508a chart 6R30A2S MIK16 AE GP 531 RF60A2SQ 6M30A1SPQ 6J200A3B R6J60A3B 6F200A3BE 6F200A1BE Transistor NEC 05F F60A1B nec 08f awg 1608 datasheet abstract
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Abstract: e10901 e10501 A/D LED Light Emitting Diode LED LED LED 7 LED 7 LED 1 7 LED ... Original
datasheet

484 pages,
3686.07 Kb

CC78K0 CC78K0S digital clock with 7segment DIODE F4005 RA78K0 RA78K0S SFR 252 diode SM78K uart c code v850 tip f0401 v8507 datasheet abstract
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