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Part Manufacturer Description Datasheet BUY
TMS28F200AFB70BDCDL Texas Instruments 256KX8 FLASH 5V PROM, 70ns, PDSO48, PLASTIC, TSOP-48 visit Texas Instruments
TMS28F200ASB Texas Instruments TMS28F200ASB 131 072 By 16-Bit, 262 144 By 8-Bit Auto-Select Boot-Block Flash Memory visit Texas Instruments
TMS28F200AZT Texas Instruments TMS28F200AZT 131 072 By 16-Bit, 262 144 By 8-Bit Auto-Select Boot-Block Memory visit Texas Instruments
TMS28F200AFB70BDBJL Texas Instruments 256KX8 FLASH 5V PROM, 70ns, PDSO44, PLASTIC, SOP-44 visit Texas Instruments
TMS28F200AMT Texas Instruments TMS28F200AMT 131 072 By 16-Bit, 262 144 By 8-Bit Auto-Select Boot-Block Flash Memory visit Texas Instruments
TMS28F200AZB80BDBJE Texas Instruments 256KX8 FLASH 12V PROM, 80ns, PDSO44, PLASTIC, SOP-44 visit Texas Instruments

Diode F200A

Catalog Datasheet MFG & Type PDF Document Tags

300lu

Abstract: diagram induction welding IGBT MODULE ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min Typ Max Units Vfm Diode Forward Voltage |f=200A Tc =25 °C - 1.9 2.8 V Tc =100°C - 1.8 - Trr Diode Reverse Recovery Time |f=200A, VR=200V di/dt= -400A/US Tc =25 °C - 90 130 nS Tc =100°C - 130 - Irr Diode Peak Reverse Recovery Current Tc =25 °C - 19 25 A Tc , If Diode Continuous Forward Current @ Tc = 25°C 200 A 'fm Diode Maximum Forward Current 400 A Pc
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300V dc dc STEP DOWN

Abstract: 3V to 300V dc dc converter Manufacturer SMBH1G200US60 Preliminary IGBT MODULE ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min Typ Max Units Vfm Diode Forward Voltage |f=200A Tc =25 °C - 1.9 2.8 V Tc =100°C - 1.8 - Trr Diode Reverse Recovery Time |f=200A , Current @ Tc = 25°C 200 A 'cm (1) Pulsed Collector Current 400 A If Diode Continuous Forward Current @ Tc = 25°C 200 A 'fm Diode Maximum Forward Current 400 A Pc Maximum Power Dissipation @Tc = 25Â
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300V dc dc STEP DOWN 3V to 300V dc dc converter igbt buck converter F200A dc to dc buck converter 200A 250AA

3V to 300V dc dc converter

Abstract: SMBL1G200US60 Diode Forward Voltage |f=200A Tc =25 °C - 1.9 2.8 V Tc =100°C - 1.8 - Trr Diode Reverse Recovery Time |f=200A, VR=200V di/dt= -400A/US Tc =25 °C - 90 130 nS Tc =100°C - 130 - Irr Diode Peak Reverse Recovery Current Tc =25 °C - 19 25 A Tc =100°C - 25 - Qrr Diode Reverse Recovery Charge , If Diode Continuous Forward Current @ Tc = 25°C 200 A 'fm Diode Maximum Forward Current 400 A Pc , Respective Manufacturer SMBL1G200US60 Preliminary IGBT MODULE ELECTRICAL CHARACTERISTICS (DIODE PART
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5V to 300V dc dc converter DC 300V to 15V converter 300V dc to dc boost converter

t3wc

Abstract: . Characteristics of reverse diode ( at Tj =25"C unless otherwise speci fird ) 1 Characteristics 1 tenis Symbols - - â'¢ â'¢ - Condi tions min. typ. max. Diode forward I F = 200A V F 2.5 on-voltage VCE-0V Reverse recovery i F=200A t r r 350 â â di/dt = G00A//ts time i , Gi'.'f Thermal - - _ _. _ - R t h (j c) 0.187 Diode. resi
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t3wc 0D02454 G00A// 0GQ24SS

t3wc

Abstract: ro (j bE â'" ° -a : .i: cu ) JZ -C REVISIONS G. Characteristics of reverse diode ( at Tj , Condi tions min. typ. max. Diode forward I F = 200A V F 2.5 on-voltage VCE-0V Reverse recovery i F=200A t r r 350 â â di/dt = G00A//ts time i , Gi'.'f Thermal - - _ _. _ - R t h (j c) 0.187 Diode. resi
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Abstract: CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) IGBT MODULE Symbol V fm Characteristics Diode Forward Voltage Test Conditions If=200A Tc =25 °C Tc =100"C Min Typ - Max 2.8 - Units V 1.9 1.8 90 130 19 25 855 1625 - Trr Diode Reverse Recovery Time |F=200A , Voltage Collector Current @ Tc = 25°C Pulsed Collector Current Diode Continuous Forward Current @ Tc Diode , nS - Irr Diode Peak Reverse Recovery Current - 25 - A - Qrr Diode Reverse -
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Abstract: 1625 - Trr Diode Reverse Recovery Time |F=200A, VR=200V Tc =25 "C di/dt= -400A/US Tc =100°C Tc =25 "C Tc =100"C Tc =25 °C Tc =100"C - 130 - nS - Irr Diode Peak Reverse , Current @ Tc = 25°C Pulsed Collector Current Diode Continuous Forward Current @ Tc = 2 5 °C Diode Maximum , - Preliminary SMBH1G200US60 ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) IGBT MODULE Symbol V fm Characteristics Diode Forward Voltage Test -
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Abstract: 1625 - Trr Diode Reverse Recovery Time |F=200A, VR=200V Tc =25 "C di/dt= -400A/US Tc =100°C , Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ Tc = 25°C Pulsed Collector Current Diode Continuous Forward Current @ Tc Diode Maximum Forward Current Maximum Power Dissipation @Tc Operating , - - Preliminary SM2G200US60 ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) IGBT MODULE Symbol V fm Characteristics Diode Forward Voltage Test -
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STK 411 230 E

Abstract: A5005 Properties] LED Light Emitting Diode LED LED [Parts Led Properties] 7 LED 7 LED 1
NEC
Original
CC78K0 STK 411 230 E A5005 e10501 CC78K0S RA78K0 78K0S U17662JJ1V0UM001 U17662JJ1V0UM M8E02 V85078K078K0S

stk 413 430 ic

Abstract: e10501 Diode LED LED LED 7 LED 7 LED 1 7 LED LED 14 LED 14 LED 1 14
NEC
Original
stk 413 430 ic IC stk 412 - 410 ic stk 442 130 tektronix 213 dmm ic stk 412 -420 IC stk 412 410 U16906JJ1V0UM001 U16906JJ1V0UM U11595J U11595E U14487J U14487E

diode SFR-136

Abstract: SFR 136 Diode LED LED [Parts Led Properties] 7 LED LED7 1 7 LED [Parts Segment LED
NEC
Original
CC78K0R diode SFR-136 SFR 136 213-DMM STK 415 90 7 segment E10501 led 7 segment 5161 78K0R U18010JJ2V0UM002 U18010JJ2V0UM V85078K0R78K078K0S U17838J

7 segment E10501

Abstract: STK 412 -430 ] A/D [Parts Level Gauge Properties] LED (Light Emitting Diode LED LED [Parts
NEC
Original
U18601JJ1V0UM STK 412 -430 stk 412 430 stk 403 - 130 3SM 49 diode RA78K0R U18601JJ1V0UM001 U17838E U17837J U17837E U17201J

v8507

Abstract: e10501 A/D LED Light Emitting Diode LED LED LED 7 LED 7 LED 1 7 LED
NEC
Original
RA78K0S v8507 tip f0401 F101B e10704 SFR 252 diode V85078K0 U17246JJ2V0UM002 U17246JJ2V0UM U17200J U17200E U17199J U17199E

msc 1697

Abstract: 486A-486B TRS-R Class H, K and R Fuse Holder Dimensions RF100A R100A F200A R200A RF400A R400A F600A
Marathon Special Products
Original
msc 1697 486A-486B nec 08f DLS FT 031 awg 1608 F60A1B 6137K/SK/7500/3-08/DBH

MT1115

Abstract: mt1039 Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering , Book TRANSISTORS AND DIODES Transistor Numerical Index Diode Numerical Index Radiation Resistant , Index Data Sheets D. Diodes Numerical Index Computer Diode Selection Guide Computer Diode Numerical Index General Purpose Diode Selection Guide General Purpose Diode Numerical Index Zener Diode
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MT1115 mt1039 2N3303 transistor bc 554 pnp FPT100 phototransistor fairchild 2N3565
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