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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

Diode PT 520

Catalog Datasheet MFG & Type PDF Document Tags

mj 1504 transistor equivalent

Abstract: ARF450 offered: - MOSFETs for applications not utilizing the intrinsic body drain diode - FREDFETs - for applications utilizing the intrinsic body drain diode. These MOSFETs have the body drain diode optimized for , CIRCUIT REQUIREMENT SOLUTION Ruggedness High Avalanche Energy Capability - EAS High Diode , Qgs/Qgd Ratio Fast Intrinsic Body-Drain diode - trr Reduced Power Dissipation Ease of Drive , Qgd Watts typ, nC typ, nC 465 520 735 695 465 520 735 695 465 520 735 695 380 465 520
Advanced Power Technology
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APT6015LVR

Abstract: 5020bn 2Q00 520 625 450 520 625 520 625 5000 5830 3650 5200 6200 6400 7600 190 220 145 , 1Q00 NOW 1Q00 2Q00 2Q00 T-MAXTM 21 25 37 47 58 100 100 520 625 450 520 625 520 , 34 44 53 77 450 700 450 520 700 5000 11250 5200 6200 11350 190 430 200 240 , 58 100 100 520 450 520 625 520 625 5000 4100 5600 6700 6400 7600 145 120 155 , 58 100 100 520 450 520 625 520 625 5000 4100 5600 6700 6400 7600 145 120 155
Advanced Power Technology
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5017BVR

Abstract: 40814 0.500 0.400 0.140 0.100 0.080 0.022 21 25 37 47 58 100 520 625 450 520 625 520 , 0.022 21 25 37 47 58 100 520 625 450 520 625 520 5000 5830 3650 5200 6200 6400 0.500 0.250 0.100 0.080 0.050 25 34 44 53 77 450 700 450 520 700 5000 11250 5200 , Package Style S S S 1000 0.60 18.0 520 300 APL1001J 500 0.12 43.0 520 300 ISOTOP® 7 22 APL501J G OT D S *ISOTOP®[J] 6 *Not to Scale
Advanced Power Technology
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5017BVR 40814 5020BN APT5010LVR 1431 T apt2x101D60 MIL-PRF-19500 ISO9001

APT10026JN

Abstract: apt1004rbn ruggedness. At full rated current, the VCE(SAT) may be higher than PT technologies, but under normal , technology has fewer and more easily controlled processing steps than with PT technologies. The end user can expect less lot-to-lot variation of electrical parameters than is possible with PT devices. Low , leakage current in alternative technologies. NPT Technology vs PT Technology Faster Switching . , of an NPT IGBT is not as temperature dependent as PT devices. These parameters remain relatively
Advanced Power Technology
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APT10026JN apt1004rbn APT10050JN APT4020BN APT5010LVFR APT5014LVR

PA1730

Abstract: TA = 25 PT V m 20 m 13.0 m 52.0 PW 10 µs, Duty 1 -30 VGS = 0 V - , MAX. 0.8 Gate Protection Diode Source 0.15 +0.10 ­0.05 1.44 6.0 ±0.3 4 0.05 MIN. 1.8 MAX. 1 Body Diode Gate 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 , G14284JJ2V0DS 50 RL VDD µ PA1730 TA = 25 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 PT , FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A -100 ID(pulse) = 52.0 A d ite ) Lim
NEC
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PA1730G G14284JJ2V0DS00

picometrix receiver

Abstract: Picometrix PT-12B Product Bulletin (Preliminary) · April 2004 · PIN/TIA receiver · High data rate, up , · High sensitivity, -15 dBm @ 850 nm · SMA or GPO output connector The PT-12B is a single-output , electrical) Low frequency cutoff1 9.0 DC diode, usable from 750 nm to 1650 nm, Minimum Typical , 8-pin butterfly with SMA or GPO 0 -40 10-10 BER, PRBS 223-1 True DC Output Option The PT , accurate extinction ratio measurements. PT-12B Product Specifications .100 TYP. .015±.003 TYP
Picometrix
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PT-12B picometrix receiver Picometrix picometrix pt-12B PT12B Diode PT 520 PB-PT-12B-0404-A

6RI150E-080

Abstract: R604A /\°7 -x / W 7s / Power Devices r Jj£ ¥ ' f t - K^ v :i -it/ Diode Modules 600M O v X / v a - ; u E v 'J - X 600 volts class general use diode modules E series m £ Device type , 1200 2000 3200 5000 A*s 520 920 4000 6000 9000 6000 16000 40960 100000 Votes 1.10 1.20 1.15 1.15 1.25 , general use diode modules E series » 3S VttOM Vote 800 800 800 800 800 800 800 800 800 V rsm , * If s m Pt A*s Vfm Voits . 1.10 1.20 1.15 1.15 1.25 1.30 1.30 1.30 1.30 ItWM mA Rth(]-C'
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OCR Scan
2RI60E-060 R604A R606A 6RI150E-080 6RI100g-120 6ri30g-160 6RI30E-060 6RI50E-060 6RI75E-060 6RI100E-060 6RI150E-060

SQD300AA100

Abstract: fast recovery diode. The mounting base of the module is electrically isolated from semiconductor , Current PT Total power dissipation 16 A 2000 TC25 W Tj Junction Temperature , Mass Typical Value Nm (fB) 520 g Electrical Characteristics Symbol Item , -300A 1.8 Thermal Impedance (junction to case) Transistor part 0.063 Diode part 0.3 , Derating Factor % Limit ed PT Lim ite d
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SQD300AA100 E76102 VCEX1000V IC300A IB2-12A IB16A

1N1742A

Abstract: 1N1742 VALIDATIONl 17 AUGUST 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N742A MIL-S , MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N1742A This amendment forms a part of , , voltage-reference, organic-polymer-encapsulated diode, and is in accordance with MIL- S-19500 and as specified , . | MIL-S-19500/298(USAF) 21 October 1964_ MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE , %, silicon, voltage-reference diode, and is in accordance with MIL-S-19500 and as specified herein. This
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OCR Scan
1N1742 1N742 military part marking symbols MIL marking diode origin semiconductor diode S-19500/298 MIL-STD-750

transistor 1000V 6A

Abstract: diode 6A 1000v recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for , Current 300 A Reverse Collector Current 300 A IB Base Current PT Total power , Recommended Value 1.0 1.4 10 14 Typical Value 1.5 15 520 Mounting Torque Mass 150 N m ( f B , 300A 6A IB1 6A IB2 15.0 s 3.0 Ic 300A Transistor part 1.8 Diode part 0.3 , reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from
SanRex
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SQD300AA120 transistor 1000V 6A diode 6A 1000v transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor

SQD300AA100

Abstract: fast recovery diode. The mounting base of the module is electrically isolated from semiconductor , Current PT Total power dissipation 16 A 2000 TC25 W Tj Junction Temperature , Mass Typical Value 520 Nm (fB) g Electrical Characteristics Symbol Item Conditions , Ic-300A 1.8 Thermal Impedance (junction to case) Transistor part 0.063 Diode part , Derating Factor % Limit ed PT Lim ite d
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VCC600V
Abstract: SAMSUNG SEMICONDUCTOR KS74AHCT I N C 02 7^414E OODblbS 5181519 520/521/522 7 , 8-blt words â'¢ '518, â'™520 and 522 have 20k(l pull-up Resistors on Q Inputs These identity , outputs, while the '520, 521, and '522 provide lD =Q outputs. The '518; '519, and '522 have open-draln. outputs. The '518, '520, and '522 feature 20-kQ inputs for analog or switch data. TYPE INPUT , No P = Q Open-Drain '520 Yes P = Q Totem-Pole '521 No P =Q Totem-Pole '522 -
OCR Scan
54/74ALS

PA1730

Abstract: 25 PT V m 20 m 13.0 m 52.0 PW 10 µs, Duty 1 -30 VGS = 0 V - , . 0.8 Gate Protection Diode Source 0.15 +0.10 ­0.05 1.44 6.0 ±0.3 4 0.05 MIN. 1.8 MAX. 1 Body Diode Gate 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 ­0.05 0.12 , G14284JJ2V0DS 50 RL VDD µ PA1730 TA = 25 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 PT , FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A -100 ID(pulse) = 52.0 A d ite ) Lim
NEC
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IC-3328

Abstract: *PA1520H = 25 °C> Channel Temperature Storage Temperature * PW = 1 0 ms. Duty Cycle = 1 % PT2 Pt i V d ss V , Circuit 2 NEC TYPICAL CHARACTERISTICS (Ta = 25 °C) ¿¿PAI 520 TOTAL POWER DISSIPATION vs , Pt 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ts - Am , Drain Current - A 3 NEC CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE ¿¿PAI 520 SOURCE TO DRAIN DIODE FORWARD VOLTAGE I sd -Diode Forward Current 0 V sd 1.0 - Source to Drain Voltage -
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OCR Scan
IC-3328 MEI-1202 TEB-1035 JUPA1520 MOS FET Array PA1520 PA1520H IEI-1209 TEI-1202
Abstract: APTGU60A120T Phase leg PT IGBT Power Module Application · · · · Welding converters Switched Mode , °C Features · Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - , Low diode VF Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead , (125°C) VGE = 15V VBus = 800V IC = 60A RG = 2.5 Typ 6440 520 100 310 40 140 16 26 94 53 2000 3480 1814 16 26 147 100 2000 5684 4650 Max Unit pF nC ns µJ ns µJ Reverse diode Advanced Power Technology
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JESD24-1 50/60H
Abstract: 5SDD 65H2400 5SDD 65H2400 Old part no. DV 889-6500-24 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 2 400 I FAVm = 6 520 I FSM = 59 000 V TO = 0.870 rT = 0.057 V A A V m Types VRRM , Limits 2 400 6 520 10 240 150 tp = 8.3 ms tp = 10 ms tp = 8.3 ms tp = 10 ms Unit V A A mA A A A2s A2s , PT ( W ) 14000 PT ( W ) 14000 = 60° 120° 180° = 30° 60° 90° 120° 180° 270° 12000 ABB Automation
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DV/159/05
Abstract: APTGU60DH120T Asymmetrical - Bridge PT IGBT Power Module Application Welding converters Switched Mode Power Supplies · Switched Reluctance Motor Drives Features · Power MOS 7® Punch Through (PT) IGBT , capability in the 50kHz range - Soft recovery parallel diodes - Low diode VF Kelvin emitter for easy drive , Switching (125°C) VGE = 15V VBus = 800V IC = 60A RG = 2.5 Typ 6440 520 100 310 40 140 16 26 94 53 2000 3480 1814 16 26 147 100 2000 5684 4650 Max Unit pF nC ns µJ ns µJ Reverse diode Advanced Power Technology
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R25B

Abstract: APTGU60H120T Full - Bridge PT IGBT Power Module Application · · · · Welding converters Switched , °C Features · Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - , Low diode VF Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead , Switching (125°C) VGE = 15V VBus = 800V IC = 60A RG = 2.5 Typ 6440 520 100 310 40 140 16 26 94 53 2000 3480 1814 16 26 147 100 2000 5684 4650 Max Unit pF nC ns µJ ns µJ Reverse diode
Advanced Power Technology
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R25B
Abstract: APTGU60DU120T Dual common source PT IGBT Power Module Application · · · AC Switches Switched Mode , MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 50kHz range - Soft recovery parallel diodes - Low diode VF , = 15V VBus = 800V IC = 60A RG = 2.5 Typ 6440 520 100 310 40 140 16 26 94 53 2000 3480 1814 16 26 147 100 2000 5684 4650 Max Unit pF nC ns µJ ns µJ Reverse diode ratings and Advanced Power Technology
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APTGU60DU
Abstract: APTGU60SK120T Buck chopper PT IGBT Power Module Application · · AC and DC motor control Switched Mode Power Supplies VCES = 1200V IC = 60A @ Tc = 80°C Features · Power MOS 7® Punch Through (PT , capability in the 50kHz range - Soft recovery parallel diodes - Low diode VF Kelvin emitter for easy drive , 60A RG = 2.5 Typ 6440 520 100 310 40 140 16 26 94 53 2000 3480 1814 16 26 147 100 2000 5684 4650 Max Unit pF nC ns µJ ns µJ Reverse diode ratings and characteristics Symbol Advanced Power Technology
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APTGU60SK120
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