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LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments Buy
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Diode Equivalent t25 4

Catalog Datasheet MFG & Type PDF Document Tags

ULTVSJJ5VCESGP

Abstract: diode t25 4 A8 unique design of clamping cell which is an equivalent TVS diode in a single package. During transient , voltage  Array of surge rated diodes with internal equivalent TVS diode  Solid-state , = 5V,Vpin7 = 0V,VIN = 2.5V,f = CIN_1 Capacitance-1 1MHz, T=25 oC, pin 1~4 to pin 7. Channel , ULTVSJJ5VCESGP is a design which includes surge rated diode arrays to protect high speed data interfaces , , Level 4 (ï'±15kV air, ï'±8kV contact discharge). ULTVSJJ5VCESGP ESD Protect for Super Speed
Chenmko Enterprise
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ULTVSQB5VCESGP

Abstract: ¬ Array of surge rated diodes with internal equivalent TVS diode  Solid-state silicon-avalanche and , clamping cell which is an equivalent TVS diode in a single package. During transient conditions, the , is a design which includes ESD rated diode arrays to protect high speed data interfaces. The , operation. ULTVSQB5VCESGP may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (ï , 10 GND 8 NC 7 VDD I/O-6 9 2 I/O-5 6 I/O-4 2 island NC 1 9
Chenmko Enterprise
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DIODE T25 4

Abstract: DIODE T25-4 equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02R is a design which includes ESD rated diode , of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram I/O 1 5 4 1 2 3 I/O 1 1&6 I/O 2 6 5 VDD GND I/O 2 3&4
Amazing Microelectronics
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DIODE T25 4 DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6

azc199

Abstract: AZC199-02S typical Fast turn-on and Low clamping voltage Array of ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Green part , rated diode arrays to protect high speed data interfaces. The AZC199-02S has been specifically , rated, low capacitance steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the transient to
Amazing Microelectronics
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azc199 C11XY
Abstract: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , rated diode arrays to protect high speed data interfaces. The AZ1045-02J has been specifically , the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). , 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3 2 Amazing Microelectronics
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Abstract: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , cell which is an equivalent TVS diode in a single package. During transient conditions, the steering , design which includes ESD rated diode arrays to protect high speed data interfaces. The AZ1045-02J has , -02J may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air,  , Circuit Diagram NC 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3 Amazing Microelectronics
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Abstract: diodes with internal equivalent TVS diode Small package saves board space Solid-state , Clamping Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping , Rdynamic_VDD CIN CCROSS â³CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 μA VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 , Pin 4 IPP=5A, tp=8/20μs, T=25 oC Any Channel pin to Ground IEC 61000-4-2 +6kV, T=25 oC, Contact Amazing Microelectronics
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AZC015-02N C03XY
Abstract: clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves , which is an equivalent TVS diode in a single package. During transient conditions, the steering diodes , 4 (± 15kV air, ±8kV contact discharge). IEC 61000-4-2 (ESD) ±16kV (air/contact) IEC , Configuration Description I/O 2 Revision 2008/12/01 ©2008-2009 Amazing Micro. NC 6 5 4 1 AZ1115-02S is a high performance design which includes surge rated diode arrays to protect Amazing Microelectronics
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MO-178 5M-1994 113XY

c09x

Abstract: AZC015-02N diodes with internal equivalent TVS diode Small package saves board space Solid-state , Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping Voltage , CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 to Pin 1 1 A 9 V 0.8 1 V 8.1 9 V 6 IF = 15mA, T=25 oC Pin 1 to Pin 4 IPP=5A, tp=8/20s, T=25
Amazing Microelectronics
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c09x SOT143-4L C09XY

amazing

Abstract: DIODE T25 4 diodes with internal equivalent TVS diode Small package saves board space Solid-state , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , MIN TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 2 A Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 A Reverse Breakdown Voltage
Amazing Microelectronics
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AZC002-02N amazing 1394 6 pin firewire to USB Connection Diagram Diode Equivalent t25 4 6 pin Package 02n 1394 firewire to USB Connection Diagram C04XY C06XY
Abstract: clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and active circuit triggering technology 5 1 3 4 , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). Features ESD Protect for 4 high-speed I/O , Configuration Description I/O 4 Revision 2008/05/12 ©2008 Amazing Micro. I/O 3 6 5 4 1 Amazing Microelectronics
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AZ1013-04S 106XY

tvs diode marking code fo

Abstract: SSEPAA5-02S with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , , T=25 oC, 0.5 0.0 13 0 1 Peak pulse Current (A) 3 4 5 Insertion Loss S21 , of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). IEC 61000-4-2 (ESD) ±15kV (air , performance design which includes surge rated diode arrays to protect high speed data interfaces. The
Silicon Standard
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SSEPAA5-02S tvs diode marking code fo data transmission through power lines DIODE MARKING CODE LAYOUT G SOT23 Firewire ESD marking code 10 sot23 101XY
Abstract: diodes with internal equivalent TVS diode Small package saves board space Solid-state , TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 2 μA Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 μA Reverse Breakdown Voltage VBV IBV = 1mA, T=25 oC Pin 4 to Pin 1 Forward Voltage VF IF = 15mA, T=25 oC Pin 1 to Pin 4 Amazing Microelectronics
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AZ1015-02N

Abstract: EQUIVALENT 02n voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space , Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 μA Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 μA Reverse Breakdown Voltage VBV IBV = 1mA, T=25 oC Pin 4 to Pin 1 Forward Voltage VF IF = 15mA, T=25 oC Pin1 to Pin 4 Clamping Voltage VCL IPP=5A, tp=8/20μs, T=25 oC
Amazing Microelectronics
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AZ1015-02N EQUIVALENT 02n 102XY 114XY

HIGH VOLTAGE DIODE 6kv

Abstract: sot143 TOP marking 16 with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , MIN TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 A Reverse Breakdown Voltage
Silicon Standard
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SSEPAA5-02N HIGH VOLTAGE DIODE 6kv sot143 TOP marking 16 MARKING 02n
Abstract: voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , Voltage SYMBOL CONDITIONS MIN TYP MAX UNITS 3.3 V VRWM Pin 4 to pin 1, T=25 oC Reverse Leakage Current ILeak VRWM=3.3V, T=25 oC, Pin 4 to pin 1 5 μA Channel Leakage Current ICH_Leak VPin 4 = 3.3V, VPin 1 = 0V, T=25 oC 1 μA 4.5 6.5 V 0.6 Amazing Microelectronics
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AZ1013-02N 107XY 116XY
Abstract: voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and active circuit triggering technology 5 3 4 Applications 2 , immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). ESD Protect for , -02S is a high performance design which includes surge rated diode arrays to protect high speed data , , low capacitance steering diodes and a unique design of clamping cell which is an equivalent TVS Amazing Microelectronics
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AZ1015-02S
Abstract: voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and active circuit triggering technology 5 3 4 Applications 2 , 0V, f = 1MHz, T=25 oC, 0.5 0.0 13 0 1 Peak pulse Current (A) 2 3 4 5 , immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). ESD Protect for , -02S is a high performance design which includes surge rated diode arrays to protect high speed data Amazing Microelectronics
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115XY
Abstract: clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). Features ESD Protect for 4 high-speed I/O , available 5 1 3 4 6 2 Applications Fingerprint Data and I/O lines protection , operating systems Pin Configuration I/O 4 Revision 2008/12/18 ©2008 Amazing Micro. 5 4 1 Amazing Microelectronics
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111XY
Abstract: diodes with internal equivalent TVS diode Small package saves board space Solid-state , TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 2 μA Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 μA Reverse Breakdown Voltage VBV IBV = 1mA, T=25 oC Pin 4 to Pin 1 Forward Voltage VF IF = 15mA, T=25 oC Pin 1 to Pin 4 Amazing Microelectronics
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