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LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments Buy
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

Diode Equivalent t25 4

Catalog Datasheet MFG & Type PDF Document Tags

ULTVSJJ5VCESGP

Abstract: diode t25 4 A8 unique design of clamping cell which is an equivalent TVS diode in a single package. During transient , voltage  Array of surge rated diodes with internal equivalent TVS diode  Solid-state , = 5V,Vpin7 = 0V,VIN = 2.5V,f = CIN_1 Capacitance-1 1MHz, T=25 oC, pin 1~4 to pin 7. Channel , ULTVSJJ5VCESGP is a design which includes surge rated diode arrays to protect high speed data interfaces , , Level 4 (ï'±15kV air, ï'±8kV contact discharge). ULTVSJJ5VCESGP ESD Protect for Super Speed
Chenmko Enterprise
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ULTVSQB5VCESGP

Abstract: ¬ Array of surge rated diodes with internal equivalent TVS diode  Solid-state silicon-avalanche and , clamping cell which is an equivalent TVS diode in a single package. During transient conditions, the , is a design which includes ESD rated diode arrays to protect high speed data interfaces. The , operation. ULTVSQB5VCESGP may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (ï , 10 GND 8 NC 7 VDD I/O-6 9 2 I/O-5 6 I/O-4 2 island NC 1 9
Chenmko Enterprise
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DIODE T25 4

Abstract: DIODE T25-4 equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02R is a design which includes ESD rated diode , of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram I/O 1 5 4 1 2 3 I/O 1 1&6 I/O 2 6 5 VDD GND I/O 2 3&4
Amazing Microelectronics
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DIODE T25 4 DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4

azc199

Abstract: AZC199-02S typical Fast turn-on and Low clamping voltage Array of ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Green part , rated diode arrays to protect high speed data interfaces. The AZC199-02S has been specifically , rated, low capacitance steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the transient to
Amazing Microelectronics
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azc199 C11XY
Abstract: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , rated diode arrays to protect high speed data interfaces. The AZ1045-02J has been specifically , the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). , 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3 2 Amazing Microelectronics
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Abstract: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , cell which is an equivalent TVS diode in a single package. During transient conditions, the steering , design which includes ESD rated diode arrays to protect high speed data interfaces. The AZ1045-02J has , -02J may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air,  , Circuit Diagram NC 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3 Amazing Microelectronics
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Abstract: diodes with internal equivalent TVS diode Small package saves board space Solid-state , Clamping Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping , Rdynamic_VDD CIN CCROSS â³CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 μA VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 , Pin 4 IPP=5A, tp=8/20μs, T=25 oC Any Channel pin to Ground IEC 61000-4-2 +6kV, T=25 oC, Contact Amazing Microelectronics
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AZC015-02N C03XY
Abstract: clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves , which is an equivalent TVS diode in a single package. During transient conditions, the steering diodes , 4 (± 15kV air, ±8kV contact discharge). IEC 61000-4-2 (ESD) ±16kV (air/contact) IEC , Configuration Description I/O 2 Revision 2008/12/01 ©2008-2009 Amazing Micro. NC 6 5 4 1 AZ1115-02S is a high performance design which includes surge rated diode arrays to protect Amazing Microelectronics
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MO-178 5M-1994 113XY

c09x

Abstract: AZC015-02N diodes with internal equivalent TVS diode Small package saves board space Solid-state , Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping Voltage , CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 to Pin 1 1 A 9 V 0.8 1 V 8.1 9 V 6 IF = 15mA, T=25 oC Pin 1 to Pin 4 IPP=5A, tp=8/20s, T=25
Amazing Microelectronics
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c09x SOT143-4L C09XY

amazing

Abstract: DIODE T25 4 diodes with internal equivalent TVS diode Small package saves board space Solid-state , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , MIN TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 2 A Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 A Reverse Breakdown Voltage
Amazing Microelectronics
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AZC002-02N amazing 1394 6 pin firewire to USB Connection Diagram Diode Equivalent t25 4 6 pin Package 02n 1394 firewire to USB Connection Diagram C04XY C06XY
Abstract: clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and active circuit triggering technology 5 1 3 4 , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). Features ESD Protect for 4 high-speed I/O , Configuration Description I/O 4 Revision 2008/05/12 ©2008 Amazing Micro. I/O 3 6 5 4 1 Amazing Microelectronics
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AZ1013-04S 106XY

tvs diode marking code fo

Abstract: SSEPAA5-02S with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , , T=25 oC, 0.5 0.0 13 0 1 Peak pulse Current (A) 3 4 5 Insertion Loss S21 , of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). IEC 61000-4-2 (ESD) ±15kV (air , performance design which includes surge rated diode arrays to protect high speed data interfaces. The
Silicon Standard
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SSEPAA5-02S tvs diode marking code fo data transmission through power lines DIODE MARKING CODE LAYOUT G SOT23 Firewire ESD marking code 10 sot23 101XY
Abstract: diodes with internal equivalent TVS diode Small package saves board space Solid-state , TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 2 μA Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 μA Reverse Breakdown Voltage VBV IBV = 1mA, T=25 oC Pin 4 to Pin 1 Forward Voltage VF IF = 15mA, T=25 oC Pin 1 to Pin 4 Amazing Microelectronics
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AZ1015-02N

Abstract: EQUIVALENT 02n voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space , Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 μA Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 μA Reverse Breakdown Voltage VBV IBV = 1mA, T=25 oC Pin 4 to Pin 1 Forward Voltage VF IF = 15mA, T=25 oC Pin1 to Pin 4 Clamping Voltage VCL IPP=5A, tp=8/20μs, T=25 oC
Amazing Microelectronics
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AZ1015-02N EQUIVALENT 02n 102XY 114XY

HIGH VOLTAGE DIODE 6kv

Abstract: sot143 TOP marking 16 with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , MIN TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 A Reverse Breakdown Voltage
Silicon Standard
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SSEPAA5-02N HIGH VOLTAGE DIODE 6kv sot143 TOP marking 16 MARKING 02n
Abstract: voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , Voltage SYMBOL CONDITIONS MIN TYP MAX UNITS 3.3 V VRWM Pin 4 to pin 1, T=25 oC Reverse Leakage Current ILeak VRWM=3.3V, T=25 oC, Pin 4 to pin 1 5 μA Channel Leakage Current ICH_Leak VPin 4 = 3.3V, VPin 1 = 0V, T=25 oC 1 μA 4.5 6.5 V 0.6 Amazing Microelectronics
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AZ1013-02N 107XY 116XY
Abstract: voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and active circuit triggering technology 5 3 4 Applications 2 , immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). ESD Protect for , -02S is a high performance design which includes surge rated diode arrays to protect high speed data , , low capacitance steering diodes and a unique design of clamping cell which is an equivalent TVS Amazing Microelectronics
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AZ1015-02S
Abstract: voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves board space Solid-state silicon-avalanche and active circuit triggering technology 5 3 4 Applications 2 , 0V, f = 1MHz, T=25 oC, 0.5 0.0 13 0 1 Peak pulse Current (A) 2 3 4 5 , immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). ESD Protect for , -02S is a high performance design which includes surge rated diode arrays to protect high speed data Amazing Microelectronics
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115XY
Abstract: clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , 61000-4-2, Level 4 (± 15kV air, ±8kV contact discharge). Features ESD Protect for 4 high-speed I/O , available 5 1 3 4 6 2 Applications Fingerprint Data and I/O lines protection , operating systems Pin Configuration I/O 4 Revision 2008/12/18 ©2008 Amazing Micro. 5 4 1 Amazing Microelectronics
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111XY
Abstract: diodes with internal equivalent TVS diode Small package saves board space Solid-state , TYP o MAX UNITS Reverse Stand-Off Voltage VRWM Pin 4 to pin 1, T=25 C 5 V Reverse Leakage Current ILeak VRWM = 5V, T=25 oC, Pin 4 to pin 1 2 μA Channel Leakage Current ICH_Leak VPin 4 = 5V, VPin 1 = 0V, T=25 oC 1 μA Reverse Breakdown Voltage VBV IBV = 1mA, T=25 oC Pin 4 to Pin 1 Forward Voltage VF IF = 15mA, T=25 oC Pin 1 to Pin 4 Amazing Microelectronics
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