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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
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LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

Diode 1n5400

Catalog Datasheet MFG & Type PDF Document Tags

1n5408

Abstract: DIODE 1N5402 dc 1N5400~1N5408 3.0A Rectifier Features 1. High current capability 2. Low reverse leakage , reverse voltage = DC blocking voltage Test Conditions Type 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 , Electrical Characteristics Tj=25 Parameter Forward voltage Reverse current Diode capacitance Test Conditions , Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3d, 1-Jan-2006 1/3 1N5400 , cycles vs. ambient temperature CD ­ Diode capacitance (pF) IF ­ Forward current (A) VF ­
Excel Semiconductor
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DIODE 1N5402 dc 1N5408 Diode 1N5408 DIODE 1N5400 1n5408 diode diode 1n5401 1n5400 diode DO-201AD
Abstract: 1N5400~1N5408 3.0A Rectifier Features 1. High current capability 2. Low reverse leakage , Value Unit Repetitive peak reverse voltage 1N5400 VRRM 50 V = Working peak reverse , =25â"ƒ IR 5 µA TA=100â"ƒ IR 50 µA VR=4V, f=1MHz CD Diode capacitance 40 , 1N5400~1N5408 IFAV â'" Average forward current (A) IFSM â'" Peak forward surge current (A , . Peak forward surge current vs. IF â'" Forward current (A) CD â'" Diode capacitance (pF) number Excel Semiconductor
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1N5408

Abstract: 1N5400 1N5400~1N5408 3.0A Rectifier Features 1. High current capability 2. Low reverse leakage , reverse voltage = DC blocking voltage Test Conditions Type 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 , Electrical Characteristics Tj=25 Parameter Forward voltage Reverse current Diode capacitance Test Conditions , Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3d, 1-Jan-2006 1/3 1N5400 , cycles vs. ambient temperature CD ­ Diode capacitance (pF) IF ­ Forward current (A) VF ­
Excel Semiconductor
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DIODE 1N5402 3a diode 1n5408

in5408 diode

Abstract: IN5408 1N5400 - IN5408 Power Diode 1A to 3A, Standard Axial Rectifiers Features: · 3.0 ampere , Typical Junction Capacitance VR = 4.0V, f = 1.0MHz 30 pF Page 1 30/05/05 V1.0 1N5400 - IN5408 Power Diode Typical Characteristics Page 2 30/05/05 V1.0 1N5400 - IN5408 Power Diode , 1N5400 100 1N5401 200 1N5402 400 3 200 DO-201AD 1N5404 600 1N5406 800 1N5407 1000 1N5408 Page 3 30/05/05 V1.0 1N5400 - IN5408 Power Diode Notes
Multicomp
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in5408 diode diode IN5408 diode 1N5408 specifications IN5408 diode data sheet diode IN 5402 3A Diode IN 5404

1N5400 diode cross reference

Abstract: diode 1N5408 specifications Silicon Rectifier 1N5400 THRU 1N5408 List Formosa MS List , Rectifier 1N5400 THRU 1N5408 3.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Features · Axial , -19500 /228 Suffix "-H" indicates Halogen-free parts, ex. 1N5400-H. Formosa MS DO-201AD Package outline , f=1MHz and applied 4V DC reverse voltage Reverse current Thermal resistance Diode junction , A O C/W pF O C SYMBOLS 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 *3 VR (V) 50
Formosa MS
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1N5400 diode cross reference DS-222115 METHOD-208 MIL-STD-202F METHOD-211A MIL-STD-750D METHOD-1038
Abstract: Silicon Rectifier Formosa MS 1N5400 THRU 1N5408 List List , /02/10 2010/03/10 Revision C Page. 6 Silicon Rectifier Formosa MS 1N5400 THRU , , ex. 1N5400-H. .375(9.5) .285(7.2) Mechanical data â'¢ Epoxy : UL94-V0 rated flame retardant , ) 1N5400 50 35 100 70 40 200 140 200 1N5404 400 280 400 1N5406 , temperature SYMBOLS 5.0 IR O V R = V RRM T J = 100 C Thermal resistance Diode junction Formosa MS
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METHOD-1026 METHOD-1027 METHOD-1036 JESD22-A102 METHOD-1051 METHOD-1056
Abstract: Formosa MS Axial Leaded General Purpose Rectifiers 1N5400 THRU 1N5408 List List , Rectifiers 1N5400 THRU 1N5408 3.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Package outline , Halogen-free parts, ex. 1N5400-H. .197(5.0) DIA. .375(9.5) .285(7.2) Mechanical data â'¢ Epoxy , 100 OC Thermal resistance Diode junction capacitance Junction to ambient *1 V RRM (V) f=1MHz and applied 4V DC reverse voltage *3 VR (V) 1N5400 50 35 100 70 200 140 Formosa MS
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METHOD-4066-2 METHOD-1021 METHOD-1031

1N5408 Diode 1N5408

Abstract: diode 1N5408 specifications 1N5400 ­ 1N5408 WTE POWER SEMICONDUCTORS Pb 3.0A STANDARD DIODE Features ! Diffused , . Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C. 1N5400 ­ 1N5408 1 of 4 © 2006 Won-Top , NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current 1N5400 ­ 1N5408 10 100 , accordance with EIA standard RS-296-E. 1N5400 ­ 1N5408 3 of 4 © 2006 Won-Top Electronics ORDERING INFORMATION Product No. Package Type Shipping Quantity 1N5400-T3 DO-201AD 1200
Won-Top Electronics
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1N540x diode 1N540x 1n5408 wte diode 1n5402 diode IN 5402 1N 5404 diode MIL-STD-202 1N5407-T3 1200/T 1N5407-TB 1N5408-T3 1N5408-TB

1N5400

Abstract: diode 1N5400 specifications HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Enter Your Part # l l Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s l Information ¡ Spe , Submit ¡ ¡ 1N5400 Availability Buy 1N5400 at our online store ! 1N5400 Information Cate gory » Diodes Class » Silicon Rectifiers Type » General -Purpose 1N5400 Specifications Milita ry
American Microsemiconductor
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diode 1N5400 specifications DO-204A

1N5408 Diode 1N5408

Abstract: diode cross reference 1N5404 Silicon Rectifier 1N5400 THRU 1N5408 List Formosa MS List , /10 Revised Date - Revision A Page. 6 Page 1 DS-222115 Silicon Rectifier 1N5400 , 200 5.0 50 UNIT A A Reverse current Thermal resistance Diode junction capacitance Storage temperature uA O C/W pF O C SYMBOLS 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 *1 V RRM , Revision A Page. 6 Page 2 DS-222115 Rating and characteristic curves (1N5400 THRU 1N5408) FIG
Formosa MS
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diode cross reference 1N5404 diode 1n5408 temperature rating METHOD-215

DO-201AD

Abstract: 1N5408 Formosa MS Axial Leaded General Purpose Rectifiers 1N5400 THRU 1N5408 List List , Rectifiers 1N5400 THRU 1N5408 3.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Package outline , Halogen-free parts, ex. 1N5400-H. .197(5.0) DIA. .375(9.5) .285(7.2) Mechanical data â'¢ Epoxy , resistance Diode junction capacitance Junction to ambient *1 V RRM (V) f=1MHz and applied 4V DC reverse voltage *3 VR (V) 1N5400 50 35 100 70 I FSM 200 A 200 140
Formosa MS
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METHOD-2031
Abstract: 1N5400 â'" 1N5408 WTE POWER SEMICONDUCTORS Pb 3.0A STANDARD DIODE Features #21; , the case 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C. 1N5400 â'" 1N5408 1 of , Current 1N5400 â'" 1N5408 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance , or metal. 2. Components are packed in accordance with EIA standard RS-296-E. 1N5400 â'" 1N5408 , Shipping Quantity 1N5400-T3 DO-201AD 1200/Tape & Reel 1N5400-TB DO-201AD 1200/Tape & Box Won-Top Electronics
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07-T3 1N5400-TB-LF

by250 diode

Abstract: diode RGP30 1W, 2W 5KW DEVICES USED BY250, 1N5400, 1N5620GP GP30 1N4000GP, FS1 5KP GP10, FS1 1N5390, GP15, FS2 1N5400, GP30 BZX85C, ZY DEVICE TYPE General Purpose Rectifier Transient Voltage , Rectifier Zener Diodes Transient Voltage Suppressor Zener Diode Transient Voltage Suppressor General Purpose Rectifier Zener Diode Transient Voltage Suppressor TELEVISION END APPLICATION AC/DC , , RGP30 EGP10, FUF4000 BYV26 Fast Recovery Rectifier Ultrafast Rectifier Fast Recovery Diode
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MR2520 BA150 BY390 by250 diode diode RGP30 ultraFast Recovery Bridge Rectifier zener alternator rectifier zy zener rgp10 MR2520L BZW04 BZW04-B RGP10

diode 1N540x

Abstract: ® 1N5400 â'" 1N5408 3.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High , CURRENT (µA) I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A) 1N5400 â'" 1N5408 0.4 0.8 1.2 1.6 , , 2012 ® 1N5400 â'" 1N5408 WON-TOP ELECTRONICS MARKING INFORMATION TAPING SPECIFICATIONS , : September, 2012 www.wontop.com 3 ® 1N5400 â'" 1N5408 WON-TOP ELECTRONICS ORDERING INFORMATION
Won-Top Electronics
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1N540 1N5401-TB-LF

diode 1n 5401

Abstract: Diode IN 5404 3.0A Rectifier COMCHIP www.comchiptech.com 1N5400 thru 1N5408 DO-201AD Reverse Voltage: 50 to 1000V Forward Current: 3.0A Features 1.0 (25.4) Min. - Diffused Junction - High Current Capability and Low Forward Voltage Drop - Surge Overload Rating to 200A Peak - Low Reverse , Page 1 Fast Switching Diode COMCHIP www.comchiptech.com Ratings and Characteristic Curves , Forward Characteristics 200 100 1N5400 - 1N5405 100 Cj, CAPACITANCE (pF) IFSM, PEAK
Comchip Technology
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diode 1n 5401 Diode 5404 1N 5400 diode MDS0312006A

1N5400

Abstract: 1N5408 1N5400 THRU 1N5408 GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts FEATURES Forward Current - 3.0 Ampere DO-201AD The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low , length,P.C.B. mounted 1N5400 THRU 1N5408 RATINGS AND CHARACTERISTIC CURVES AVERAGE FORWARD , 0.1 1 10 100 t,PULSE DURATION,sec. 100 KD Diode
KD Diode
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MIL-STD-750

1N5400-1N5408

Abstract: APPLICATION DIODE 1N5406 Current vs. Number of Cycles 100 C D ­ Diode Capacitance ( pF ) 1N5400 ­ 1N5405 10 1N5406 ­ 1N5408 , reverse voltage =DC DC Bl Blocking ki voltage lt Test Conditions Type 1N5400 1N5401 1N5402 1N5404 1N5406 , Reverse current Diode capacitance Thermal resistance junction to ambient Test Conditions IF=3A TA=25°C TA , Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4) Rev. A2
Vishay Intertechnology
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1N5400-1N5408 APPLICATION DIODE 1N5406 LITEON 1N5406 1n5406 liteon 1n54001n5408 1N54001 88/540/EEC 91/690/EEC D-74025
Abstract: µs µs µs µs µs µs µs Note 3: Zener diode clamps must be connected across the , with a small-signal diode connected between VS and the GATE output to simulate the effects of a 12V , designed to drive a 12V Zener diode clamp connected across the gate and source of the MOSFET switch. W , ground. Many inductive loads have these diodes included. If not, a diode of the proper current rating , G1 GND GND 12V 1N5400 12V, 1A SOLENOID LTC1255 â'¢ F02 Figure 2. Protecting Linear Technology
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12V 2A regulator

Abstract: stepper motor using irfz44 16 16 500 60 60 60 30 30 30 µs µs µs µs µs µs µs Note 3: Zener diode clamps , with a 12V Zener clamp in series with a small-signal diode connected between VS and the GATE output , required to generate the gate drive. The charge pump is designed to drive a 12V Zener diode clamp , have these diodes included. If not, a diode of the proper current rating should be connected across , G1 GND 12V 1N5400 12V, 1A SOLENOID LTC1255 · F02 Figure 2. Protecting Inductive
Linear Technology
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12V 2A regulator stepper motor using irfz44 74C266 74C02 equivalent components of diode 1n4001 zener mr2535L

6A4 DIODE

Abstract: AX-52 diode DIODE RECTIFIERS · 1.0A THRU 6.0A · 50V THRU 1000V CURRENT (A) @ TEMP "C SURGE (A) 50V 100 V 200V 400V 600V 800V 1000V PACKAGE 1.0 25 50 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 1.5 25 50 J-05 0-1 J-2 J-4 J-6 J-8 J-10 DO-15 3.0 25 200 RL251 RL252 RL253 RL254 RL255 RL256 RL257 3 AX 3.0 25 150 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 DO-27 6.0 25 400 6A-05 6A-1 6A-2 6A-4 6A-6 6A-8 6 A-10 6 AX 52
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OCR Scan
6A4 DIODE AX-52 diode diode 6a4 diode 6a6 diode rL257 A106
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