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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors , Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , ;IB=0 VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-6mA -2.5 V VBEsat Base-emitter saturation voltage IC=-6A ;IB=-6mA -3.0 V ICBO Collector cut-off current , current gain IC=-6A ; VCE=-4V Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 160 pF fT ... | Original |
4 pages, |
2SD2389 2SB1559 2SB1559 abstract |
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| Abstract: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors , Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , ;IB=0 VCEsat Collector-emitter saturation voltage IC=6A ;IB=6mA 2.5 V VBEsat Base-emitter saturation voltage IC=6A ;IB=6mA 3.0 V ICBO Collector cut-off current VCB=160V , gain IC=6A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 85 pF fT ... | Original |
4 pages, |
audio Darlington 6A 2SB1559 npn DARLINGTON 10A 2SD2389 2SD2389 abstract |
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| Abstract: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1559 2SB1559 , temperature -55~150 TC=25 JMnic Product Specification 2SB1559 2SB1559 Silicon PNP Darlington , Collector-emitter saturation voltage IC=-6A ;IB=-6mA -2.5 V VBEsat Base-emitter saturation voltage IC=-6A ;IB=-6mA -3.0 V ICBO Collector cut-off current VCB=-160V -160V; IE=0 -100 A IEBO Emitter cut-off current VEB=-5V; IC=0 -100 A hFE DC current gain IC=-6A ; VCE=-4V Cob ... | Original |
4 pages, |
2SD2389 2SB1559 2SB1559 abstract |
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| Abstract: Inchange Semiconductor Product Specification 2SB1559 2SB1559 Silicon PNP Darlington Power , Semiconductor Product Specification 2SB1559 2SB1559 Silicon PNP Darlington Power Transistors CHARACTERISTICS , breakdown voltage IC=-30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-6mA -2.5 V VBEsat Base-emitter saturation voltage IC=-6A ;IB=-6mA -3.0 V ICBO , ; IC=0 -100 A hFE DC current gain IC=-6A ; VCE=-4V Cob Output capacitance IE=0 ... | Original |
4 pages, |
audio Darlington 6A 2SD2389 2SB1559 2SB1559 abstract |
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| Abstract: Drivers Outputs Darlington Darlington Darlington saturated saturated Max. Output Voltage 80 V (50 V , yes yes yes yes no UDN2878 UDN2878 SIP Darlington yes no no over . For complete , SIP SIP SIP SIP -30 to +125 Avail. Temp. (癈) Outputs Darlington Darlington Darlington Darlington Darlington Darlington Darlington Max. Output Voltage � V 120 V 100 V 100 V 200 V 120 V �0 V Max. Continuous Output Current �A 4A 3A 2A 3A 5A �A Peak Output Current �A 6A 5A 4A 6A 8A �A Clamp Diodes yes yes yes yes ... | Original |
2 pages, |
UDx2559 SMA4032 ULN2065 ULN2068 UDN2540 A2540 ULN2065 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2250 2SD2250 APPLICATIONS ·Designed for power amplifier applications , Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1490 2SB1490 , -6A; IB= -6mA -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -6mA -3.0 ... | Original |
2 pages, |
2SD2250 2SB1490 2SB1490 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2389 2SD2389 APPLICATIONS ·Designed for audio, series regulator and , Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1559 2SB1559 ELECTRICAL CHARACTERISTICS TC=25 , -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA -2.5 V ... | Original |
2 pages, |
audio Darlington 6A 2SD2389 2SB1559 2SD2389 power transistor 2SB1559 abstract |
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| Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD1894 2SD1894 APPLICATIONS ·Designed for power amplifier applications , isc Silicon PNP Darlington Power Transistor 2SB1254 2SB1254 ELECTRICAL CHARACTERISTICS TC=25 unless , ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA -2.5 V VBE(sat ... | Original |
2 pages, |
2SD1894 2SB1254 2SB1254 abstract |
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| Abstract: _-----Darlington Power Transistors File Number 973 RCA8766 RCA8766 Series 10-Ampere N-P-N Monolithic Darlington Power Transistors 350, 400, 450 Volts, 150 Watts Gain of 100 at 4, 6A Features: â- Operates from IC without , RCA-8766 RCA-8766 Series* are monolithic n-p-n silicon Darlington transistors designed for automotive electronic , SOLI» STATE Ol DE|3Ã-75DÃ-1 DG1731E DG1731E 1 387 508 f G E SOL I DE STATE Darlington Power Transistors- OIE , hFE RCA8766 RCA8766 3 6a 100 RCA8766A RCA8766A 3 4a 100 - - - - - RCA8766B RCA8766B 3 6a - - 100 - - - RCA8766C RCA8766C 3 ... | OCR Scan |
4 pages, |
TA8766 RCA8766E RCA8766D RCA8766C RCA8766A RCA8766 darlington npn rca GD17311 GD17311 abstract |
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| Abstract: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors , Specification 2SD2386 2SD2386 Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise , VCEsat Collector-emitter saturation voltage IC=6A ;IB=6mA 2.5 V VBE Base-emitter voltage IC=6A ; VCE=5V 3.0 V ICBO Collector cut-off current VCB=140V IE=0 5.0 uA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 uA hFE-1 DC current gain IC=6A ... | Original |
3 pages, |
2SD2386 2SB1557 2SD2386 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| A6817SEP A6817SEP A6817SEP A6817SEP 28-Line Addressable Decoder/Driver 450 30 A6A259KLB 8-Bit Addressable DMOS Power Driver 350 50 A6A259KA 8-Bit Addressable DMOS Power Driver 350 50 A6A595KLW 8-Bit Serial-Input Latched DMOS Power Drivers 350 50 A6A595KA 8-Bit Serial-Input Latched DMOS Power Drivers 350 50 -Channel High-Current Darlington Array 350 50 ULN2003L ULN2003L ULN2003L ULN2003L 7-Channel High-Current Darlington Array 350 50 ULQ2003L ULQ2003L ULQ2003L ULQ2003L 7-Channel High-Current Darlington Array 350 50 ULQ2003A ULQ2003A ULQ2003A ULQ2003A 7-Channel High www.datasheetarchive.com/files/allegro/selguide/sink1.asp.htm |
Allegro | 02/10/2001 | 40.47 Kb | HTM | sink1.asp.htm |
| (sat) * Collector-Emitter Saturation Voltage I C = 6 A I B = 24 mA I C = 12 A I I B = 120 mA 4 V V BE * Base-Emitter Voltage I C = 6 A V CE = 3 V 2.8 V h FE * DC Current Gain I C = 6 A V CE = 3 V I C = 12 A V CE ST | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Datasheet COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6059 2N6059 2N6059 2N6059 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5061-v3.htm |
STMicroelectronics | 25/05/2000 | 6.46 Kb | HTM | 5061-v3.htm |
| Voltage I C = 100 mA 100 V V CE(sat) * Collector-Emitter Saturation Voltage I C = 6 A -Emitter Saturation Voltage I C = 12 A I B = 120 mA 4 V V BE * Base-Emitter Voltage I C = 6 A V CE = 3 V 2.8 V h FE * DC Current Gain I C = 6 A V CE = 3 V I C = 12 A ST | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Datasheet COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6059 2N6059 2N6059 2N6059 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5061.htm |
STMicroelectronics | 20/10/2000 | 6.77 Kb | HTM | 5061.htm |
| = 100 mA 100 V V CE(sat) * Collector-Emitter Saturation Voltage I C = 6 A I B = 24 mA I C = 12 = 120 mA 4 V V BE * Base-Emitter Voltage I C = 6 A V CE = 3 V 2.8 V h FE * DC Current Gain I C = 6 A V CE = 3 V I C = 12 A V CE = 3 V 750 100 f T Transition frequency I C = 5 A ST | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6059 2N6059 2N6059 2N6059 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Document Number: 5061 Date Update: 19/08/97 Pages www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5061-v2.htm |
STMicroelectronics | 14/06/1999 | 4.62 Kb | HTM | 5061-v2.htm |
| = 100 mA 100 V V CE(sat) * Collector-Emitter Saturation Voltage I C = 6 A I B = 24 mA I C = 12 = 120 mA 4 V V BE * Base-Emitter Voltage I C = 6 A V CE = 3 V 2.8 V h FE * DC Current Gain I C = 6 A V CE = 3 V I C = 12 A V CE = 3 V 750 100 f T Transition frequency I C = 5 A ST | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6059 2N6059 2N6059 2N6059 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Document Number: 5061 Date Update: 19/08/97 Pages www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5061-v1.htm |
STMicroelectronics | 02/04/1999 | 4.66 Kb | HTM | 5061-v1.htm |
| -Emitter Sustaining Voltage (I B = 0) I C = 100 mA 100 V V CE(sat) * Collector-emitter Saturation Voltage I C = 6 A Voltage I C = 12 A I B =120 mA 4 V V BE * Base-emitter Voltage I C = 6 A V CE = 3 V 2.8 V h FE * DC Current Gain I C = 5 A V CE = 3 V I C = 6 A ST | SILICON NPN POWER DARLINGTON TRANSISTOR BDX87C BDX87C BDX87C BDX87C SILICON NPN POWER DARLINGTON SILICON NPN POWER DARLINGTON TRANSISTOR n MONOLITHIC DARLINGTON CONFIGURATION n INTEGRATED ANTIPARALLEL www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4105-v1.htm |
STMicroelectronics | 14/06/1999 | 4.65 Kb | HTM | 4105-v1.htm |
| I C = 30 mA 100 V V CE(sat) * Collector-Emitter Saturation Voltage I C = 6 A (on) * Base-Emitter Voltage I C = 6 A V CE = 3 A 2.5 V h FE * DC Current Gain I C = 6 A V CE =3 V I C = 15 A V CE =3 V 750 ST | HIGH CURRENT SILICON POWER DARLINGTON TRANSISTOR Datasheet HIGH CURRENT SILICON POWER DARLINGTON TRANSISTOR BDW83C BDW83C BDW83C BDW83C www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4265-v3.htm |
STMicroelectronics | 25/05/2000 | 6.51 Kb | HTM | 4265-v3.htm |
| -Emitter Sustaining Voltage (I B = 0) I C = 100 mA 100 V V CE(sat) * Collector-emitter Saturation Voltage I C = 6 A Voltage I C = 12 A I B =120 mA 4 V V BE * Base-emitter Voltage I C = 6 A V CE = 3 V 2.8 V h FE * DC Current Gain I C = 5 A V CE = 3 V I C = 6 A ST | SILICON NPN POWER DARLINGTON TRANSISTOR BDX87C BDX87C BDX87C BDX87C SILICON NPN POWER DARLINGTON SILICON NPN POWER DARLINGTON TRANSISTOR n MONOLITHIC DARLINGTON CONFIGURATION n INTEGRATED ANTIPARALLEL www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4105.htm |
STMicroelectronics | 02/04/1999 | 4.69 Kb | HTM | 4105.htm |
| (sat) * Collector-Emitter Saturation Voltage I C = 6 A I B = 12 mA I C = 15 A I B = 150 mA 2.5 4 V V BE(on) * Base-Emitter Voltage I C = 6 A V CE = 3 A 2.5 V h FE * DC Current Gain I C = 6 A V CE =3 V I C = 15 A ST | HIGH CURRENT SILICON POWER DARLINGTON TRANSISTOR Datasheet HIGH CURRENT SILICON POWER DARLINGTON TRANSISTOR BDW83C BDW83C BDW83C BDW83C www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4265.htm |
STMicroelectronics | 20/10/2000 | 6.83 Kb | HTM | 4265.htm |
| (t p = 10 ms) 100 A I B Base Current 3 A I BM Base Peak Current (t p = 10 ms) 6 A C = 56 A I B = 1.6 A I C = 56 A I B = 1.6 A T j = 100 o C 1 I C = 56 A I B = 1.6 A I C = 56 A I B = 1.6 A T j = 100 o C 2 t p = 3 m s I B1 = 0.6 A T j = 100 o C 220 260 A/ m s V CE (3 = 0.6 A T j = 100 o C 3 6 V V CE (5 m s)w w Collector-Emitter Dynamic www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3394-v3.htm |
STMicroelectronics | 25/05/2000 | 8.21 Kb | HTM | 3394-v3.htm |