NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Preliminary Technical Information HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 IXGR60N60C2C1 VCES IC110 IC110 VCE(sat) tfi(typ) = = £ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (Limited by Leads) 75 A IC110 IC110 TC = 110°C 3 ... | Original |
6 pages, |
ISOPLUS247 IF110 IXGR60N60C2C1 IC110 IXGR60N60C2C1 abstract |
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