DS501ST DS5344-2 DS5344-3 DS501ST06 DS501ST05 DS501ST04 DS501ST03 DS501ST02

DS501ST Rectifier Diode Replaces October 2000, version DS5344-2.0 DS5344-3.0 October 2001 FEATURES KEY PARAMETERS I Double Side

DS501ST DS501ST DS501ST DS501ST Rectifier Diode Replaces October 2000, version DS5344-2 DS5344-2.0 DS5344-3 DS5344-3.0 October 2001 FEATURES KEY PARAMETERS I Double Side Cooling VRRM 600V I High Surge Capability IF(AV) 940A IFSM 11000A APPLICATIONS I Rectification I Freewheel Diode I DC Motor Control I Power Supplies I Welding I Battery Chargers VOLTAGE RATINGS Type Number DS501ST06 DS501ST06 DS501ST05 DS501ST05 DS501ST04 DS501ST04 DS501ST03 DS501ST03 DS501ST02 DS501ST02 DS501ST01 DS501ST01 Repetitive Peak Reverse Voltage VRRM V 600 500 400 300 200 100 Conditions VRSM = VRRM + 100V Outline type code: T. See Package Details for further information. Fig.1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS501ST04 DS501ST04 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. www.dynexsemi.com 1/5 DS501ST DS501ST CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Max. Units 940 Conditions A Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 1477 A Continuous (direct) forward current - 1322 A 596 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 937 A Continuous (direct) forward current - 760 A Conditions Max. Units 765 A IF Half wave resistive load Tcase = 100oC unless otherwise stated Symbol Parameter Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 1205 A Continuous (direct) forward current - 1055 A 480 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 750 A Continuous (direct) forward current - 600 A IF 2/5 Half wave resistive load www.dynexsemi.com DS501ST DS501ST SURGE RATINGS Parameter Symbol IFSM I2t IFSM I2t Surge (non-repetitive) forward current Units 10ms half sine; Tcase = 175oC 8.8 kA 387 x 103 A2s 10ms half sine; Tcase = 175oC 11.0 kA VR = 0 I2t for fusing Max. VR = 50% VRRM - 1/4 sine Surge (non-repetitive) forward current Conditions 605 x 103 A2s I2t for fusing THERMAL AND MECHANICAL DATA Conditions Min. Max. Units dc - 0.07 o Anode dc - 0.14 o Cathode dc - 0.14 o C/W Double side - 0.02 o C/W Single side - 0.04 o C/W Forward (conducting) - 185 o Reverse (blocking) - 175 o Storage temperature range 55 200 o Clamping force 4.0 5.0 kN Min. Max. Units Parameter Symbol Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 4.5kN with mounting compound C Virtual junction temperature C C CHARACTERISTICS Symbol Parameter Conditions IRM Peak reverse current At VRRM, Tcase = 175oC - 30 mA VTO Threshold voltage At Tvj = 175°C - 0.7 V Slope resistance At Tvj = 175°C - 0.25 m rT www.dynexsemi.com 3/5 DS501ST DS501ST CURVES 800 3000 dc 1/2 wave 3 phase 6 phase 700 Mean power dissipation - (W) Instantaneous forward current, IF - (A) 2500 2000 Tj = 175ºC 1500 1000 600 500 400 300 200 Tj = 25ºC 500 100 0 0.7 0 0.8 0.9 1.0 1.1 1.2 1.3 Instantaneous forward voltage, VF - (V) 0 1.4 Fig.2 Maximum (limit) forward characteristics 800 xt 2 350 15 300 I2t 10 250 5 Thermal impedance - (°C/W) 400 20 Anode side cooled 0.1 Double side cooled 200 0 1 10 ms 1 2 3 5 10 20 150 50 Conduction Effective thermal resistance Junction to case °C/W 0.01 d.c. Halfwave 3 phase 120° 6 phase 60° 0.001 0.001 0.01 Double side Single side 0.070 0.140 0.080 0.150 0.105 0.175 0.1425 0.2125 0.1 Time - (s) 1 10 Cycles at 50Hz Duration Fig.4 Surge (non-repetitive) forward current vs time (with 50% VRRM, Tcase = 175°C) 4/5 700 1.0 I2t value - (A2s x 103) Peak half sine forward current - (kA) = Î2 200 300 400 500 600 Mean on-state current, IT(AV) - (A) Fig.3 Power dissipation curves 450 I2t 100 Fig.5 Maximum (limit) transient thermal impedance junction to case - (°C/W) www.dynexsemi.com DS501ST DS501ST PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Holes Ø3.6 x 2.0 deep (One in each electrode) Cathode Ø42 max 15.0 14.0 Ø19 nom Ø19 nom Anode Ø37.5 max Nominal weight: 55g Clamping force: 4.5kN ±10% Package outline type code: T Note: 1. Package maybe supplied with pins and/or tags. www.dynexsemi.com 5/5 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com