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DS05-50110-1E

Catalog Datasheet MFG & Type PDF Document Tags

MB84VD2002

Abstract: MB84VD2003 To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50110-1E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 8M (× 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VD2002-10/MB84VD2003-10 s FEATURES · Power supply voltage of 2.7 to 3.6 V · High performance 100 ns maximum access time · Operating Temperature ­20 to +85°C - FLASH MEMORY · Simultaneous operations Read-while Erase or Read-while-Program · Minimum 100,000 write/erase cycles · Sector erase architecture Two 16 K
Fujitsu
Original
MB84VD2002 MB84VD2003 MBM29DL800TA/BA

MB84VD2003

Abstract: MB84VD2002 FUJITSU SEMICONDUCTOR DATA SHEET DS05-50110-1E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 8M (× 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VD2002-10/MB84VD2003-10 s FEATURES · Power supply voltage of 2.7 to 3.6 V · High performance 100 ns maximum access time · Operating Temperature ­20 to +85°C - FLASH MEMORY · Simultaneous operations Read-while Erase or Read-while-Program · Minimum 100,000 write/erase cycles · Sector erase architecture Two 16 K byte, four 8 K bytes
Fujitsu
Original
E4000
Abstract: FUJITSU SEMICONDUCTOR I DATA SHEET ¡ DS05-50110-1E MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM M B84 V D2002-1o/M B84 V D2003-1o â  FEATURES â'¢ Power supply voltage of 2.7 to 3.6 V â'¢ High performance 100 ns maximum access time â'¢ Operating Temperature -20 to +85°C â'" FLASH MEMORY â'¢ Simultaneous operations Read-while Erase or Read-while-Program â'¢ Minimum 100,000 write/erase cycles â'¢ Sector erase architecture Two 16 K byte, four 8 K -
OCR Scan
D2002-1 D2003-1 MB84VD2002-1 BGA-48P-M06 MCM-M001-2-3