MB39A106 MB3889 IRF7901D1 FPT-30P-M04 SLF12565T220M3R5 C1608JB1H104K 6SVP150M - Datasheet Archive

 

DATA SHEET DS04-71107-1Ea ASSP for Power Supply Applications Evaluation Board MB39A106 DESCRIPTION The MB39A106 evaluation board

 

FUJITSU MICROELECTRONICS DATA SHEET DS04-71107-1Ea ASSP for Power Supply Applications Evaluation Board MB39A106 MB39A106 DESCRIPTION The MB39A106 MB39A106 evaluation board is a surface mount circuit board with two channels of down conversion circuit. The output voltage is internally set to 5.0 V and 3.3 V. The maximum current 3.0 A is supplied from the power supply voltage between 7.0 V and 15.0 V. MB39A106 MB39A106 has a circuit configuration with no sense resistor as it is provided with overcurrent protection, eliminating the need for an external sense resistor. The output is stopped by the thing that various protection function turn off the output transistor in the output short-circuit or the low VCC, or the over voltage operation. In addition, each channel can be controlled to be turned on and off can be set for a soft-start. Since the MB39A106 MB39A106 evaluation board is the same circuit configuration of the MB3889 MB3889 evaluation board, it is recommended to make comparative study about the reduction of external parts with the built-in Bootstrap diode. EVALUATION BOARD SPECIFICATIONS (Ta = +25 °C) Value Parameter Typ Max 7 12 15 V 260 300 340 kHz (CH1) 3.25 3.30 3.35 (CH2) 4.92 5.00 5.08 (CH1) 1.0 3.0 (CH2) 1.0 3.0 (CH1) 33 (CH2) 50 (CH1) 26.1 41.0 75.8 (CH2) 26.1 41.0 75.8 (CH1) 1.8 2.0 2.2 (CH2) 1.8 2.0 2.2 Input voltage Oscillation frequency Output voltage Output current Output ripple voltage Soft-start time Discharge time Unit Min V A mV ms ms (Continued) Copyright©2003-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2003.10 MB39A106 MB39A106 (Continued) Value Parameter Min 0.70 Unit Max 0.41 Short-circuit detection time Typ 1.38 Detection voltage of overvoltage protection (CH1) 3.59 3.70 3.81 (CH2) 5.44 5.6 5.78 Detection current of overcurrent protection * (CH1) 5.06 5.20 5.31 (CH2) 5.00 5.16 ms 5.28 V A *: The values are calculated at fixed VIN = 12 V (Typ) and Ron = 28.5 . TERMINAL DESCRIPTION Symbol Function Power supply terminal VIN = 7 V to 15 V (Typical value : 12 V) VIN Vo1, Vo2 DC/DC converter output terminal Power supply control terminal VCTL = 0 V to 0.8 V : Standby mode VCTL = 2.0 V to VIN : Operation mode CTL CTL1, CTL2 CH control terminal VCTL1, 2 = GND : Output OFF VCTL1, 2 = OPEN : Output ON PWRGOOD Protection state output terminal Output L ( = 0 V) is fixed at protection operation. PGND DC/DC converter GND terminal SGND MB39A106 MB39A106 GND terminal SWITCH DESCRIPTION SW Name Function ON OFF 1 CTL Power supply control Operation mode Standby mode 2 CTL1 CH1 control Output OFF Output ON 3 CTL2 CH2 control Output OFF Output ON SETUP AND CHECKUP (1) Setup · Connect the power supply terminal side to VIN and GND. Connect the Vo side to the required loading device or measuring instrument. · Set SW1(CTL) to OFF (standby mode), and SW2,3 to ON (output OFF). (2) Checkup · VIN (power supply) set to ON. Then, SW1(CTL) set to ON (operation mode), and SW2,3 set to OFF (output ON). The IC works normally with the following outputs: VO1 = 3.3V (Typ), VO2 = 5V(Typ). 2 MB39A106 MB39A106 COMPONENT LAYOUT · On-board Component Layout C7A C26 C7B C7C L2 PGND2 C18 Q2 C8 V O2 R14 R15 R16 R18 R6 C24 D2 R5 C1 C6 16 C9 C16 VIN R1 C23 D1 R2 C3 30 R3 C2 R17 C13 15 C20 C14 R4 R8 M1 1 C15 C11 R12 C21 SW1 7 5 3 1 CTL1 8 6 4 2 SGND PWRGOOD C19 C10 R9 R10 R13 R11 PGND CTL2 C22 C12 R7 CTL VO1 C5 Q1 C17 PGND1 L1 C25 C4A C4B C4C (Continued) 3 MB39A106 MB39A106 (Continued) Board Layout Top Side Inside VIN & GND (LAYER3) 4 Inside GND (LAYER2) Bottom Side MB39A106 MB39A106 CONNECTION DIAGRAM IIN VIN C1 + C2 + IO + C25 82 F C17 0.1 F + CH1 VO1 (3.3 V/3.0 A) + C4B C4C C4A 150 F R3 0 R2 0 PGND L1 22 H Q1 IRF7901D1 IRF7901D1 C18 0.1 F C5 0.1 F PGND1 L2 22 H Q2 IRF7901D1 IRF7901D1 + IO + R6 0 R7 0 + CH2 VO2 (5 V/3.0 A) + C7A C7B C7C C8 0.1 F 150 F PGND2 C26 82 F R1 1.3 k C23 R5 1.3 k C9 4.7 F C24 D1 SW1 D2 C3 0.1 F CTL CTL1 C6 0.1 F 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 CTL2 C16 0.1 F IC MB39A106 MB39A106 1 R13 430 R11 R10 10 k 2 3 4 C21 C19 6 7 8 9 10 11 12 13 14 15 C11 0.1 F R18 C12 0.022 F C10 0.022 F R9 13 k R12 6.2 k 5 R8 47 k C13 0.1 F C15 0.1 F R16 120 C20 C22 C14 0.01 F R14 13 k R15 10 k R17 3.3 k SGND PWRGOOD SW3 SW2 R4 100 k 5 MB39A106 MB39A106 PARTS LIST Symbol Part name M1 IC Q1, Q2 Model name MB39A106 MB39A106 Dual IRF7901D1 IRF7901D1 FETKYTM Specification Package Manufacturer FPT-30P-M04 FPT-30P-M04 FUJITSU MICROELECTRONICS Main side : VDS = 30 V, Qg = 10.5 nC (Max) Synchronous side : VDS = 30 V, Qg = 18.3 nC (Max) SBD : VF = 0.52V(Max) at IF = 1A SO-8 IR MB39A106 MB39A106 Not mounted D1, D2 L1 Inductor SLF12565T220M3R5 SLF12565T220M3R5 22 H, IDC1 = 3.5 A, RDC = 31.6 m, IDC2 = 3.8 A SMD TDK L2 Inductor SLF12565T220M3R5 SLF12565T220M3R5 22 H, IDC1 = 3.5 A, RDC = 31.6 m, IDC2 = 3.8 A SMD TDK C1 Not mounted C2 Not mounted 1608 type TDK SANYO 1608 type TDK C3, C6 C4 C5, C8 Note Ceramic C1608JB1H104K C1608JB1H104K 0.1 F (50 V) condenser OS-CONTM 6SVP150M 6SVP150M 150 F (6.3 V) Ceramic C1608JB1H104K C1608JB1H104K 0.1 F (50 V) condenser C7 OS-CONTM 6SVP150M 6SVP150M 150 F (6.3 V) SANYO C9 Ceramic C3216JB1A475 C3216JB1A475 condenser M 4.7 F (10 V) 3216 type. TDK 1608 type TDK 1608 type TDK C10 Ceramic C1608JB1H223K C1608JB1H223K 0.022 F (50 V) condenser Ceramic C11, C13 condenser C1608JB1H104K C1608JB1H104K 0.1 F (50 V) C12 Ceramic C1608JB1H223K C1608JB1H223K 0.022 F (50 V) condenser 1608 type TDK C14 Ceramic C1608JB1H103K C1608JB1H103K 0.01 F (50 V) condenser 1608 type TDK C15 Ceramic C1608JB1H104K C1608JB1H104K 0.1 F (50 V) condenser 1608 type TDK C16 Ceramic C1608JB1H104K C1608JB1H104K 0.1 F (50 V) condenser 1608 type TDK 1608 type TDK Ceramic C17, C18 condenser C1608JB1H104K C1608JB1H104K 0.1 F (50 V) Note : OS-CON is a trademark of SANYO Electric Co., Ltd. Dual FETKY is a trademark of International Rectifier Corp. (Continued) 6 MB39A106 MB39A106 (Continued) Symbol Part name Model name Specification Package Manufacturer Note C19 Not mounted C20 Not mounted C21 Not mounted C22 Not mounted C23 Not mounted C24 Not mounted C25, C26 OS-CONTM 16SVP82M 16SVP82M 82 F (16 V) R1 Resistor RR0816P-132-D RR0816P-132-D 1.3 k (0.5%) R2, R3, R6, R7 Jumper RK73Z1J RK73Z1J R4 Resistor R5 SANYO 1608 type ssm 1608 type KOA RR0816P-104-D RR0816P-104-D 100 k (0.5%) 1608 type ssm Resistor RR0816P-132-D RR0816P-132-D 1.3 k (0.5%) 1608 type ssm R8 Resistor RR0816P-473-D RR0816P-473-D 47 k (0.5%) 1608 type ssm R9 Resistor RR0816P-133-D RR0816P-133-D 13 k (0.5%) 1608 type ssm R10 Resistor RR0816P-103-D RR0816P-103-D 10 k (0.5%) 1608 type ssm R11 R12 Resistor RR0816P-622-D RR0816P-622-D 6.2 k (0.5%) 1608 type ssm R13 Resistor RR0816P-431-D RR0816P-431-D 430 (0.5%) 1608 type ssm R14 Resistor RR0816P-133-D RR0816P-133-D 13 k (0.5%) 1608 type ssm R15 Resistor RR0816P-103-D RR0816P-103-D 10 k (0.5%) 1608 type ssm R16 Resistor RR0816P-121-D RR0816P-121-D 120 (0.5%) 1608 type ssm R17 Resistor RR0816P-332-D RR0816P-332-D 3.3 k (0.5%) 1608 type ssm R18 4 pole MATSUKYU WT-2-1 MacEight SW1 IR ROHM SANYO TDK ssm KOA MATSUKYU MacEight DIP switch DAS-4H Terminal pins 0 WT-2-1 Not mounted Not mounted International Rectifier Corp. ROHM Co., Ltd. SANYO Electric Co., Ltd. TDK Corporation. SUSUMU CO., LTD. KOA Corporation. Matsukyu Co., Ltd. MacEight Co., Ltd. 7 MB39A106 MB39A106 INITIAL SETTINGS (1) Output voltage CH1 VO1 (V) = 1.23 / R12 × (R10 + R12 + R13) = 3.3 (V) : CH2 VO2 (V) = 1.23 / R17 × (R15 + R16 + R17) = 5.0 (V) : (2) Oscillation frequency : fOSC (kHz) = 14100 / R8 (k) = 300 (kHz) (3) Soft-start time CH1 ts (s) = 0.41 × C11 (F) = 41.0 (ms) : CH2 ts (s) = 0.41 × C13 (F) = 41.0 (ms) : (4) Discharge time CH1 toff (s) = 0.020 × C11 (F) = 2.0 (ms) : CH2 toff (s) = 0.020 × C13 (F) = 2.0 (ms) : (5) Short-circuit detection time tscp (s) = 0.070 × C14 (F) = 0.70 (ms) : (6) Detection voltage of overvoltage protection CH1 VOVP (V) = 1.12 × VO1 = 3.7 (V) : CH2 VOVP (V) = 1.12 × VO2 = 5.6 (V) : (7) Detection current of overcurrent protection CH1 (ILIM = 118 A, RON = 28.5 m, VIN = 12 V, VO1 = 3.3 V) IOCP (A) = (ILIM × R1 / RON) - ( (VIN - VO1) × VO1 / 2 / VIN / fOSC / L1) = 5.20 (A) : CH2 (ILIM = 118 A, RON = 28.5 m, VIN = 12 V, VO2 = 5.0 V) IOCP (A) = (ILIM × R5 / RON) - ( (VIN - VO2) × VO2 / 2 / VIN / fOSC / L2) = 5.16 (A) : 8 MB39A106 MB39A106 REFERENCE DATA (1) Load current vs. conversion efficiency characteristics (VIN = 12 V) ch1 100% Efficiency (%) = (VO × IO)/ (VIN × IIN) × 100 Convertion efficiency (%) Convertion efficiency (%) 100% ch2 90% 80% 70% 60% VIN = 12 V Setting VO = 3.3 V CTL1 = OPEN CTL2 = GND 50% 40% 30% 10 m 100 m 1 Load current IO (A) 90% 80% 70% 50% 40% Efficiency (%) = (VO × IO)/(VIN × IIN) × 100 30% 10 m 10 VIN = 12 V Setting VO = 5 V CTL1 = OPEN CTL2 = GND 60% 100 m 1 Load current IO (A) SW1 : ON SW2 : OFF SW3 : ON 10 SW1 : ON SW2 : ON SW3 : OFF (2) Load Reguration (VIN = 12 V) ch1 ch2 5.04 3.33 5.03 3.32 3.31 3.3 3.29 3.28 VIN = 12 V CTL1 = OPEN CTL2 = GND 3.27 3.26 10 m 100 m 1 Load current IO (A) 10 SW1 : ON SW2 : OFF SW3 : ON Output voltage VO (V) Output voltage VO (V) 3.34 5.02 5.01 5 4.99 4.98 VIN = 12 V CTL1 = GND CTL2 = OPEN 4.97 4.96 10 m 100 m 1 Load current IO (A) 10 SW1 : ON SW2 : ON SW3 : OFF 9 MB39A106 MB39A106 (3) Line regulation ch1 ch2 5.04 3.33 5.03 3.32 3.31 3.3 3.29 3.28 IO = 1.5 A CTL1 = OPEN CTL2 = GND 3.27 3.26 7 8 9 10 11 12 13 Input voltage VIN (V) 10 Output voltage VO (V) Output voltage VO (V) 3.34 14 15 SW1 : ON SW2 : OFF SW3 : ON 5.02 5.01 5 4.99 4.98 IO = 1.5 A CTL1 = GND CTL2 = OPEN 4.97 4.96 7 8 9 10 11 12 13 Input voltage VIN (V) 14 15 SW1 : ON SW2 : ON SW3 : OFF MB39A106 MB39A106 (4) Output ripple waveforms (VIN = 12 V) ch1 IO = 0 A 50 mV 0 -50 mV 1 s/div IO = 1.5 A 50 mV 0 -50 mV 1 s/div IO = 3 A 50 mV 0 -50 mV 1 s/div SW1 : ON SW2 : OFF SW3 : ON 11 MB39A106 MB39A106 ch2 IO = 0 A 50 mV 0 -50 mV 1 s/div IO = 1.5 A 50 mV 0 -50 mV 1 s/div IO = 3 A 50 mV 0 -50 mV 1 s/div 12 SW1 : ON SW2 : ON SW3 : OFF MB39A106 MB39A106 (5) Output waveform at load sudden change (VIN = 12 V) ch1 ch2 50 mV 50 mV 0 0 -50 mV -50 mV 4A 4A 2A 2A 1 ms/div 1 ms/div 0 0 SW1 : ON SW2 : OFF SW3 : ON SW1 : ON SW2 : ON SW3 : OFF (6) Overcurrent protection operation characteristics (VIN = 12 V) 6 6 OCP detection current IOCP (A) ch2 OCP detection current IOCP (A) ch1 5 4 3 2 VIN = 12 V CTL1 = OPEN, CTL2 = GND ILIM = 118 A, RON = 28.5 m 1 0 0 0.4 0.8 1.2 RLIM (k) 1.6 2 RLIM = R1 SW1 : ON SW2 : OFF SW3 : ON 5 4 3 2 VIN = 12 V CTL1 = GND, CTL2 = OPEN ILIM = 118 A, RON = 28.5 m 1 0 0 0.4 0.8 1.2 RLIM (k) 1.6 2 RLIM = R5 SW1 : ON SW2 : ON SW3 : OFF 13 MB39A106 MB39A106 COMPONENT SELECTION METHODS Ch2 side N-ch MOS FET Inductor C7A C26 Output smoothing condenser C7B C7C L2 PGND2 C18 Q2 C8 220 C12 R14 R15 R16 R18 VO2 R7 R6 C24 D2 R5 C6 C9 C16 C3 VIN PGND R1 C23 D1 R2 R8 C14 R4 CTL1 SW1 R17 C13 7 5 C15 C11 R12 C21 8 6 3 4 1 2 CTL VO1 220 C5 Q1 C17 PGND1 L1 C4A C25 N-ch MOS FET C4B Inductor ch1 side Board Photograph 14 SGND PWRGOOD C19 C10 R9 R10 R13 R11 30 M1 1 R3 C2 C22 15 C20 16 C1 CTL2 C4C Output smoothing condenser MB39A106 MB39A106 The following subsections show the component selection methods with the following common parametric values. CH1 : 3.3 V output VIN (Max) = 15 V, Io = 3 A, fOSC = 300 kHz 1. N-ch MOS FET (IRF7901D1 IRF7901D1(IR product) Main side VDS = 30 V, VGS = ± 20 V, ID = 6.2 A, RDS (on) = 38 m (Max) , Qg = 10.5 nC (Max) Synchronous rectifier side VDS = 30 V, VGS = ± 20 V, ID = 6.2 A, RDS (on) = 32 m (Max) , Qg = 18.3 nC (Max) Diode VF (forward voltage) = 0.52 V (Max) at IF = 1A Drain current : peak value The peak drain current of this FET must be within its rated current. If the FET's peak drain current is ID, it is obtained by the following formula. Main side VIN (Max) - Vo ton ID IO + 2L 3+ 15 - 3.3 1 × × 0.22 2 × 22 × 10 - 6 300 × 103 3.20 A Synchronous rectifier side Vo ID IO + toff 2L 3+ 3.3 1 × × (1 - 0.22) 2 × 22 × 10 - 6 300 × 103 3.20 A 15 MB39A106 MB39A106 2. Inductor (SLF12565T-220M3R5 SLF12565T-220M3R5: TDK product) 22 H (tolerance ± 20%), rated current = 3.5 A L value at full load current condition: Peak-to-peak value of ripple current should be set under half load-current. 2 (VIN (Max) - Vo) L ton IO 2 × (15 - 3.3) 1 × × 0.22 3 300 × 103 5.7 H The load current satisfying the continuous current condition is obtained by the following formula. Vo IO toff 2L 3.3 1 × × (1 - 0.22) 2 × 22 × 10 - 6 300 × 103 195 mA Ripple current : peak value The peak ripple current must be within the rated current of the inductor. If the peak ripple current is IL, it is obtained by the following formula. VIN (Max) - Vo ton IL IO + 2L 3+ 15 - 3.3 1 × × 0.22 300 × 103 2 × 22 × 10 - 6 3.20 A Ripple current : peak-to-peak value If the peak-to-peak ripple current is IL, it is obtained by the following formula. VIN (Max) - Vo ton IL = L = 15 - 3.3 22 × 10 - 6 = 0.39 A : 16 × 1 × 0.22 300 × 103 MB39A106 MB39A106 3. Output smoothing condenser (6SVP150M 6SVP150M: SANYO product) 150 F, rated voltage = 6.3V, ESR = 35 m, maximum allowable ripple current = 2.35 Arms. The output ripple voltage (1% of output voltage) , output smoothing condenser, ripple current and series resistance are assumed to be VO, CL ICLrms and ESR. Series resistance Vo 1 ESR - 2fCL IL 0.033 1 - 0.39 2 × 300 × 103 × 150 × 10 - 6 81.1 m Series resistance of above condenser is 35 m and acceptable. Condenser CL IL 2f (Vo - IL × ESR) 0.39 2 × 300 × 103 × (0.033 - 0.39 × 0.035) 10.7 F Capacitance of the above condenser is 150 F (Typ) and acceptable. Ripple current (VIN (Max) - Vo) ton ICLrms 23L (15 - 3.3) × 0.22 23 × 22 × 10 - 6 × 300 × 103 112.6 mArms Ripple current of the above condenser is 2.35 Arms and acceptable. 17 MB39A106 MB39A106 CH2 : 5 V output VIN (Max) = 15 V, Io = 3 A, fOSC = 300 kHz 1. N-ch MOS FET (IRF7901D1 IRF7901D1 (IR product) Main side VDS = 30 V, VGS = ± 20 V, ID = 6.2 A, RDS (on) = 38 m (Max) , Qg = 10.5 nC (Max) Synchronous rectifier side VDS = 30 V, VGS = ± 20 V, ID = 6.2 A, RDS (on) = 32 m (Max) , Qg = 18.3 nC (Max) Diode VF (forward voltage) = 0.52 V (Max) at IF = 1A. Drain current : peak value The peak drain current of this FET must be within its rated current. If the FET's peak drain current is ID, it is obtained by the following formula. Main side VIN (Max) - Vo ton ID IO + 2L 3+ 15 - 5 1 × × 0.33 300 × 103 2 × 22 × 10 - 6 3.25 A Synchronous rectifier side Vo ID IO + toff 2L 3+ 5 1 × × (1 - 0.33) 2 × 22 × 10 - 6 300 × 103 3.25 A 18 MB39A106 MB39A106 2. Inductor (SLF12565T-220M3R5 SLF12565T-220M3R5: TDK product) 22 H (tolerance ± 20%), rated current = 3.5 A. L value at full load current condition: Peak-to-peak value of ripple current should be set under half load-current. 2 (VIN (Max) - Vo) L ton IO 2 × (15 - 5) 3 × 1 × 0.33 300 × 103 7.3 H The load current satisfying the continuous current condition is obtained by the following formula. Vo IO toff 2L 5 1 × × (1 - 0.33) 2 × 22 × 10 - 6 300 × 103 254 mA Ripplle current : peak value The peak ripple current must be within the rated current of the inductor. If the peak ripple current is IL, it is obtained by the following formula. VIN (Max) - Vo ton IL IO + 2L 3+ 15 - 5 1 × × 0.33 2 × 22 × 10 - 6 300 × 103 3.25 A Ripple current : peak-to-peak value If the peak-to-peak ripple current is IL, it is obtained by the following formula. VIN (Max) - Vo ton IL = L = 15 - 5 22 × 10 - 6 × 1 × 0.33 300 × 103 = 0.5 A : 19 MB39A106 MB39A106 3. Output smoothing condenser (6SVP150M 6SVP150M: SANYO product) 150 F, rated voltage = 6.3V, ESR = 35 m, maximum allowable ripple current = 2.35 Arms The output ripple current (1% of output voltage) , output smoothing condenser, ripple current and series regsistance are assumed to be VO, CL, ICLrms and ESR. Series resistance Vo 1 ESR - 2fCL IL 0.05 1 - 0.5 2 × 300 × 103 × 150 × 10 - 6 96.5 m Series resistance of above condenser is 35 m and acceptable. Condenser CL IL 2f (Vo - IL × ESR) 0.5 2 × 300 × 103 × (0.05 - 0.5 × 0.035) 8.2 F Capacitance of the above condenser is 150 F (Typ) and acceptable. Ripple current (VIN (Max) - Vo) ton ICLrms 23L (15 - 5) × 0.33 23 × 22 × 10 - 6 × 300 × 103 144.3 mArms Ripple current of the above condenser is 2.35 Arms and acceptable. 20 MB39A106 MB39A106 ORDERING INFORMATION EV board part No. MB39A106EVB MB39A106EVB EVboard version No. Remarks MB39A106EV MB39A106EV Board Rev. 2.0 21 MB39A106 MB39A106 MEMO 22 MB39A106 MB39A106 MEMO 23 FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://www.fma.fujitsu.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD. 151 Lorong Chuan, #05-08 New Tech Park, Singapore 556741 Tel: +65-6281-0770 Fax: +65-6281-0220 / Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/microelectronics/ FUJITSU MICROELECTRONICS SHANGHAI CO., LTD. Rm.3102, Bund Center, No.222 Yan An Road(E), Shanghai 200002, China Tel: +86-21-6335-1560 Fax: +86-21-6335-1605 http://cn.fujitsu.com/fmc/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 206 KOSMO TOWER, 1002 Daechi-Dong, Kangnam-Gu,Seoul 135-280 Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://www.fmk.fujitsu.com/ FUJITSU MICROELECTRONICS PACIFIC ASIA LTD. 10/F., World Commerce Centre, 11 Canton Road Tsimshatsui, Kowloon Hong Kong Tel: +852-2377-0226 Fax: +852-2376-3269 http://cn.fujitsu.com/fmc/tw All Rights Reserved. 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