DS04-71101-1E MB39A105 MB39A105EV MCH3405 CMD5D13 SBS004 MCH3306 CMD5D13-6R8

DATA SHEET DS04-71101-1E ASSP for Power Supply Applications Evaluation Board MB39A105 s DESCRIPTION MB39A105 evaluation board is

FUJITSU SEMICONDUCTOR DATA SHEET DS04-71101-1E DS04-71101-1E ASSP for Power Supply Applications Evaluation Board MB39A105 MB39A105 s DESCRIPTION MB39A105 MB39A105 evaluation board is an up-converter circuit surface-mounted PCB. The up-converter circuit has its output set to 9 V and supplies a current of 250 mA at a power-supply voltage between 2.4 V and 4.0 V. The board incorporates the short-circuit protection detection output function that shuts off power to the circuit upon detection of a short-circuiting overload or when the under voltage lockout protection circuit is actuated, as a result, the short-circuit between I/O is prevented. Also, the board carries small and thin discrete components, making itself a low-profile, space-saving board. MB39A105 MB39A105 evaluation board provides low power consumption and high efficiency. s EVALUATION BOARD SPECIFICATIONS Min Typ Max Unit Input voltage 2.4 3.3 4.0 V Oscillation frequency 400 500 600 kHz Output voltage 8.1 9.0 9.9 V Output current 120 250 mA Output ripple voltage 180 mV Soft-start time 7 10 19 ms Short-circuit detection time 19 50 125 ms s TERMINAL DESCRIPTION Symbol Function 1 VIN Source and IC driving power-supply terminal 2 SGND 3 GND DC/DC converter GND terminal 4 OUT Output terminal 5 CTL Power supply control terminal Main GND terminal MB39A105 MB39A105 s SWITCH DESCRIPTION SWITCH FUNCTION ON OFF SW1 Power supply control H (Operating) L (Standby) s SETUP AND CHECKUP (1) Setup · Plug power-supply terminals into the VIN and GND terminals. · Connect the OUT terminal to a required loading device or measuring instrument. · Set SW1 to OFF. (2) Checkup · Set SW1 to ON to supply power to the VIN terminal. When the output voltage at OUT is 9 V (Typ), the IC is operating normally. s COMPONENT LAYOUT · On-board Component Layout MB39A105EV MB39A105EV BOARD C11 R6 R3 R7 C9 C12 R4 C8 R5 C10 CTL R1 GND R10 M1 C1 C4 VIN C6 C7 OUT Q2 Q1 D1 L1 2 SW1 GND C5 R9 C3 R8 C2 Q3 R11 SGND A K MB39A105 MB39A105 · Board Layout Top Side Bottom Side 3 MB39A105 MB39A105 s CONNECTION DIAGRAM R3 1 kW 100 pF R6 R7 C11 R5 330 kW 22 kW SW1 VIN CTL 43 kW C9 R4 C10 C12 0.1 mF 51 kW 1000pF 100 kW 100 pF Q3 MCH3405 MCH3405 8 1 C8 R1 7 MB39A105 MB39A105 3 C1 R2 7.5 kW M1 2 0.22 mF R11 0W 6 0.1 mF 4 5 SGND R8 100 kW VIN R9 0W L1 CMD5D13 CMD5D13 6.8 mH Q1 C2 4.7 mF GND 4 C3 4.7 mF OUT D1 C4 C5 C6 4.7 mF 4.7 mF C7 SBS004 SBS004 MCH3306 MCH3306 Q2 MCH3405 MCH3405 9V R10 0W 4.7 mF 0.1 mF GND MB39A105 MB39A105 s PARTS LIST Part No. Part name Specification Manufacturer Model name Note M1 IC MB39A105 MB39A105 Q1 P-ch FET VDS = -20 V, ID = 2 A (Max) SANYO MCPH3 MCH3306 MCH3306 Q2, Q3 N-ch FET VDS = 20 V, Qg = 4.5 nC (Typ) SANYO MCPH3 MCH3405 MCH3405 D1 Diode VF = 0.4 V (Max) , at IF = 1 A SANYO CPH3 SBS004 SBS004 L1 Inductor 6.8 µH SUMIDA SMD CMD5D13-6R8 CMD5D13-6R8 C1, C7, C9 Ceramic condenser 0.1 µF (50 V) TDK 1608 type C1608JB1H104K C1608JB1H104K C2, C3, C4, C5, C6 Neo capacitor 4.7 µF (10 V) NEC/TOKIN 3225 type TEPSLA21A475M TEPSLA21A475M 8R C8 Ceramic condenser 0.22 µF (10 V) TDK 1608 type C1608JB1A224K C1608JB1A224K C10 Ceramic condenser 1000 pF (50 V) TDK 1608 type C1608CH1H102J C1608CH1H102J Not mounted C11, C12 Ceramic condenser 100 pF (50 V) TDK 1608 type C1608CH1H101J C1608CH1H101J Not mounted R1 Resistor 7.5 k (0.5%) ssm 1608 type RR0816P752D RR0816P752D R2 Jumper 0 KOA 1608 type RK73Z1J-0D RK73Z1J-0D Not mounted R3 Resistor 1 k (0.5%) ssm 1608 type RR0816P102D RR0816P102D Not mounted R9, R10 Jumper 0 KOA 1608 type RK73Z1J-0D RK73Z1J-0D R4 Resistor 51 k (0.5%) ssm 1608 type RR0816P513D RR0816P513D R8, R11 Resistor 100 k (0.5%) ssm 1608 type RR0816P104D RR0816P104D R5 Resistor 43 k (0.5%) ssm 1608 type RR0816P433D RR0816P433D R6 Resistor 330 k (0.5%) ssm 1608 type RR0816P334D RR0816P334D R7 Resistor 22 k (0.5%) ssm 1608 type RR0816P223D RR0816P223D SW1 DIP switch 2 pole Pin Terminal pin WT-2-1 SANYO SUMIDA TDK ssm MATSUKYU MacEight NEC/TOKIN : : : : : : : FUJITSU Package FPT-8P-M05 FPT-8P-M05 MB39A105PFV MB39A105PFV MATSUKYU DMS-2H MacEight Not mounted WT-2-1 SANYO Electric Co., Ltd. Sumida Corporation TDK Corporation SUSUMU CO., LTD. Matsukyu Co., Ltd. MacEight Co., Ltd. NEC TOKIN Corporation 5 MB39A105 MB39A105 s INITIAL SETTINGS (1) Output voltage Vo1 (V) = 0.5/R7× (R5+R6+R7) = 9.0 (V) : (2) Oscillation frequency fosc (kHz) = 3750/R1 3750/R1 (k) = 500 (kHz) : (3) Soft-start time ts (s) = 0.045×C8 (µF) = 10.0 (ms) : (4) Short-circuit detection time tscp (s) = 0.23×C8 (µF) = 50.0 (ms) : 6 MB39A105 MB39A105 s REFERENCE DATA (1) Conversion efficiency vs. load current characteristic (VIN = 3.3 V) Conversion efficiency - Load current Conversion efficiency (%) % 100 95 90 85 80 75 70 65 60 VIN = 3.3 V Setting VO = 9 V 55 50 10 m 1 100 m Load current IO (A) (2) Load regulation (VIN = 3.3 V) Output voltage - Load current 9.10 Output voltage VO (V) 9.08 VIN = 3.3 V Setting VO = 9 V 9.06 9.04 Load Regulation Vo = 5.5 mV 9.02 9.00 8.98 8.96 8.94 8.92 8.90 10 m 100 m 1 Load current IO1 (A) 7 MB39A105 MB39A105 (3) Line regulation Output voltage - Input Voltage 9.10 Output voltage VO1 (V) Setting VO = 9 V Vo = 100 mA 9.05 Line Regulation = 17.4 mV 9.00 8.95 8.90 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Input voltage VIN (V) (4) Soft-start operation waveforms VO (V) VO (V) VIN = 3.3 V Setting VO = 9 V Load = 100 8 6 4 2 2 0 CTL (V) 4 0 CTL (V) 4 CTL 2 CTL 2 0 0 0 8 VO 6 VO 4 VIN = 3.3 V Setting VO = 9 V Load = 100 8 2 4 6 8 10 12 14 16 18 20 (ms) 0 2 4 6 8 10 12 14 16 18 20 (ms) MB39A105 MB39A105 (5) Output ripple waveforms (VIN = 3.3 V) VO (mV) 100 50 Ripple = 49 mV 0 -50 -100 VIN = 3.3 V Setting VO = 9 V Load = 100 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 (µs) (6) Short-circuit detection operation waveforms VO (V) VIN = 3.3 V Setting VO = 9 V Load = 100 VO 5 0 Nch Drain (V) 5 Nch Drain 0 CSCP (V) 1.0 0.5 CSCP 0 0 20 40 60 80 100 120 140 160 180 200 (ms) 9 MB39A105 MB39A105 s COMPONENT SELECTION METHODS 1. Board view MB39A105 MB39A105 EV BOARD C11 R6 R7 R5 C9 C12 R4 C8 CTL C10 R2 R11 SGND R3 R1 GND R10 M1 C1 C3 GND C4 C5 C6 R9 R8 C2 SW1 Q3 VIN C7 OUT Q2 Q1 D1 L1 Input Pch FET A K Output smoothing capacitor FET Inductor Flyback diode 10 MB39A105 MB39A105 2. The following subsections show the component selection methods with the following common parametric values. Vin = 2.4 V (Min) , Vo = 9.0 V, Io = 250 mA, fosc = 500 kHz (1) N-ch MOS FET (MCH3405 MCH3405 (SANYO product) ) VDS = 20 V, VGS = ±10 V, ID = 1.8 A, RDS (on) = 160 m (Typ) , Qg = 4.5 nC (Typ) Drain current: Peak value The peak drain current of this FET must be within its rated current. If the FET's peak drain current is ID, it is obtained by the following formula. ID VO×IO Vin (Min) 9×0.25 2.4 + + Vin (Min) ton 2L 2.4× (9-2.4) 2×6.8×10-6×9 VO-Vin VO 1 × 500×103 ton = t 1.20 A (2) P-ch MOS FET (MCH3306 MCH3306 (SANYO product) ) VDS = -20 V, VGS = ±10 V, ID = 2 A, RDS (on) = 160 m (Typ) , Qg = 4.5 nC (Typ) Drain current: Peak value The peak drain current of this FET must be within its rated current. If the FET's peak drain current is ID, it is obtained by the following formula. ID VO×IO Vin (Min) 9×0.25 2.4 + + Vin (Min) ton 2L 2.4× (9-2.4) 2×6.8×10-6×9 VO-Vin VO 1 × 500×103 ton = t 1.20 A (3) Inductor (CMD5D13-6R8 CMD5D13-6R8 : SUMIDA product) 6.8 µH (tolerance: ±20%) , rated current = 1.4 A The condition for L to be a continuous current within the operating voltge range is obtained by the following formula. L Vin (Max) 2 2×IO×VO 42 2×0.25×9 ton × 9-4 9 × 1 500×103 3.95 µH 11 MB39A105 MB39A105 The load current satisfying the continuous current condition is obtained by the following formula. IO Vin (Max) 2 ton 2×L×VO 42 2×6.8×10-6×9 × 9-4 9 × 1 500×103 145.2 mA Ripple current : Peak value The peak ripple current must be within the rated current of the inductor. If the peak ripple current is IL, it is obtained by the following formula. IL VO×IO Vin (Min) 9×0.25 2.4 + + Vin (Min) ton ton = VO-Vin 2L VO 2.4× (9-2.4) 1 × 2×6.8×10-6×9 500×103 t 1.20 A Ripple current : Peak-to-peak value If the peak-to-peak ripple current is IL, it is obtained by the following formula. IL = = Vin (Max) ton L 4× (9-4) 6.8×10-6×9 × 1 500×103 = 0.654 A : (4) Output smoothing capacitor (TEPSLA21A475M8R TEPSLA21A475M8R (3units used in parallel) : NEC/TOKIN products) 4.7 µF, rated voltage = 10 V, ESR = 500 m, maximum allowable ripple current = 1 Ap-p The output ripple voltage, output smoothing capacitor, ripple current, and series resistance are assumed to be VO, CL, ICL, and ESR, respectively. ESR, CL, and ICL are obtained by the following formula. Series resistance 1 ESR VO - IL 2fCL 0.18 1 - 0.654 2×500×103×14.1×10-6 252.7 m When the above three capacitors are used in parallel, the series resistance is 167 m and acceptable. 12 MB39A105 MB39A105 Capacitor CL IL 2f (VO-IL×ESR) 0.654 2×500×103× (0.18-0.654×0.167) 2.94 µF When the above three capacitors are used in parallel, the capacitance is 14.1 µF (Typ) and acceptable. Maximum allowable ripple current ICL Vin (Max) ton L 4× (9-4) 1 × 500×103 6.8×10-6×9 0.654 A When the above three capacitors are used in parallel, the maximum allowable ripple current is 3 Ap-p (Typ) and acceptable. (5) Flyback diode (SBS004 SBS004 : SANYO product) VR (reverse DC voltage) = 15 V, average output current = 1.0 A, peak current = 10 A VF (forward voltage) = 0.40 V, IF = 1.0 A VR : Value enough to satisfy the input voltage15 V On time of the diode is assumed to be tD (Max), the diode mean current IDi is obtained by the following formula. IDi IO× (1- VO-Vin ) = 0.25× (1-0.267) = 183.3 mA : VO On time of the diode is assumed to be tD (Max), the diode peak current IDip is obtained by the following formula. IDip VO×IO Vin (Min) + Vin (Min) ton = 1.20 A : 2L 13 MB39A105 MB39A105 s ORDERING INFORMATION EV board part No. MB39A105EVB MB39A105EVB 14 EVboard version No. MB39A105EV MB39A105EV Board Rev1.1 Note MB39A105 MB39A105 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. 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