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2002/95/EC DRA3123J DRC3123J ZJH00307BED - Datasheet Archive
DRA3123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3123J Features Package Packaging Code
This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). DRA3123J DRA3123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3123J DRC3123J Features Package Packaging Code SSSMini3-F2-B Name Pin 1: Base 2: Emitter 3: Collector Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 100 mW Junction temperature Tj 150 °C Storage temperature Tstg 55 to +150 °C Marking Symbol: L4 Internal Connection B C R1 R2 Resistance value E R1 R2 2.2 47 k k Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA Collector-emitter saturation voltage VCE(sat) VI(on) VCE = 0.2 V, IC = 5 mA Input voltage (OFF) VI(off) IC = 10 mA, IB = 0.5 mA Input voltage (ON) 80 0.25 VCE = 5 V, IC = 100 µA 1.2 V V 0.4 V Input resistance R1 30% 2.2 +30% k Resistance ratio R1 / R2 0.037 0.047 0.057 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: November 2009 ZJH00307BED ZJH00307BED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). DRA3123J DRA3123J DRA3123J DRA3123J_IC-VCE DRA3123J DRA3123J_PT-Ta PT Ta 300 50 25 -600 µA -80 -500 µA -400 µA -60 -300 µA -40 -200 µA -20 40 80 120 160 0 200 0 VCE(sat) IC -8 -10 -10 IC / IB = 20 -1 50 Ta = 85°C -30°C -1 -10 -100 Collector current IC (mA) DRA3123J DRA3123J_VIN-IO VIN IO -100 VO = -5 V VO = - 0.2 V Ta = 85°C -1 25°C -10-1 - 0.1 -30°C 100 0 - 0.1 -12 25°C 150 IO VIN Output current IO (mA) Collector-emitter saturation voltage VCE(sat) (V) -6 Ta = 85°C 200 DRA3123J DRA3123J_IO-VIN DRA3123J DRA3123J_VCEsat-IC - 0.01 - 0.1 -4 250 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) -10 -2 Input voltage VIN (V) 0 -100 µA Forward current transfer ratio hFE 75 VCE = -10 V IB = -700 µA -100 100 Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C -30°C -10-2 -10 -1 25°C -30°C Ta = 85°C 25°C -1 -10 Collector current IC (mA) 2 hFE IC -120 125 0 DRA3123J DRA3123J_hFE-IC IC VCE -100 -10-3 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 Input voltage VIN (V) ZJH00307BED ZJH00307BED -1.2 - 0.1 - 0.1 -1 -10 Output current IO (mA) -100 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). DRA3123J DRA3123J SSSMini3-F2-B Unit: mm 0.20 ±0.05 1.20 ±0.05 +0.05 0.30 -0.02 (5°) 0.80 ±0.05 1.20 ±0.05 3 2 1 +0.05 0.20 -0.02 (0.4) +0.05 0.13 -0.02 (0.4) (0.27) 0.80 ±0.05 0 to 0.05 0.52 ±0.03 (5°) ZJH00307BED ZJH00307BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20080805