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DQ15-DQ0

Catalog Datasheet MFG & Type PDF Document Tags

P8025

Abstract: tms38053 INSTRUCTION BUFFER 16 HOST PROCESSOR INTERFACE /E 5 16 LANCAM INTERFACE DQ15-DQ0 A4-A0 , : /EC (Enable Comparison, Output, Three-state TTL) DQ15­DQ0 The /EC signal enables the LANCAM /MF , held HIGH. (Data Bus, Input/Output, TTL) The DQ15­DQ0 lines transfer data, commands and status , registers /W, /CM, /EC and DQ15­DQ0 (if /W is LOW) on the falling edge of /E. If /W is HIGH, data on DQ15­DQ0 from the LANCAM is valid on the rising edge of /E. /W /FI (Write Enable, Output
MUSIC Semiconductors
Original
MU9C8148 P8025 tms38053 BNA30 DRA110 MU9C1 MU9C1480

DQ15-DQ0

Abstract: PD20 organization. The BYTE# pin controls whether the device data I/O pins DQ15-DQ0 operate in the byte or word configuration. If the BYTE# pin is set at logic '1', the device is in word configuration and DQ15-DQ0 are , , DQ15-DQ0, and the second flash is connected to the high word lane, DQ23 to DQ16 (Figure 2.1). To address , device is configured as x16 or word mode, as in this design example, data I/O pins DQ15-DQ0 become , command, DQ15-DQ0 data bits are used to set appropriate word count (WC). Since maximum word count is 16
Spansion
Original
PD20 DQ15-DQ8

Tbb 38

Abstract: MU9C8248 INTERFACE DQ15-DQ0 6 A5-A0 D15-D0 ALE, SRNW /CS /RS, /LDS /WS, /UDS /HBRDY /HBEN /HBDIR , indicates an active LOW function) LANCAM Interface: /CM (Data/Command Select, Output, TTL) DQ15­DQ0 The /CM signal determines whether DQ15­DQ0 contain LANCAM data or commands. /CM is LOW at the falling edge of /E for Command cycles and HIGH for Data cycles. (Data Bus, Common I/O, TTL) The DQ15­DQ0 , , Output, TTL) The /E output enables the LANCAM while LOW and registers /W, /CM, /EC and DQ15­DQ0 (if
MUSIC Semiconductors
Original
MU9C8248 Tbb 38 intel 8248

f16e

Abstract: Supply To provide 3.0 volts supply.(2.7 to 3.3 volts) GND Ground DQ15-DQ0 NC No , Buffer & Latches 256Kx16 X-Decoder Flash Bank1 256Kx16 A18-A0 Flash Bank2 DQ15-DQ0 , CE# TOE OE# TOHZ TOLZ VIH WE# TCHZ TCLZ HIGH-Z DQ15-DQ0 TOH DATA VALID , OE# TCEH CE# TCES DQ15-DQ0 AA SW0 55 SW1 A0 SW2 DATA WORD (ADDR/DATA , DQ15-DQ0 AA SW0 55 A0 SW1 DATA SW2 WORD (ADDR/DATA) 808T\808_ENG\F4-2_E Figure
SANYO Electric
Original
f16e LE28DW8102T

A23A0

Abstract: DQ15-DQ0 GDWD OLQHV DUH ELGLUHFWLRQDO ELGLUHFWLRQDO EXIIHUV DUH QHHGHG RQ WKH GDWD OLQHV DQ15-DQ0 DQ15-DQ0 , Using_S29WS-N_on_3V-Systems_AN_A0 July 5, 2005 A p p l i c a t i o n CPU Vcc 3.3 V DQ15-DQ0 N o t e Flash Vcc 1.8 V TI SN74AVCA164245 VCCA VCCB A B DIR OE# DQ15-DQ0 1.8 V OE# VCC
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Original
S29WS256N A23-A0 A23A0

LE28DW3215AT-80

Abstract: flash "simultaneous read write" 198 A19-A0 A19-A15 A19-A10 DQ15-DQ0 CE# OE# WE# VDD VSS NC Pin Name Bank Select address Flash , Bank2 1024K x 16 A20-A0 CE# OE# WE# Flash Bank1 DQ15-DQ0 Control Logic I/O Buffers & , HIGH-Z DQ15-DQ0 DATA VALID TCHZ DATA VALID HIGH-Z Figure3: Read Cycle Timing Diagram , TWP WE# TAS TDS TWPH OE# TCEH CE# TCES DQ15-DQ0 AA SW0 55 SW1 A0 SW2 , # TWEH WE# TWES AA SW0 DQ15-DQ0 55 SW1 A0 SW2 DATA WORD (ADDR/DATA) Figure4
SANYO Electric
Original
LE28DW3215AT-80 flash "simultaneous read write" 198

DQ15-DQ0

Abstract: A21-A0 Description A21­A0 DQ15­DQ0 CE1# CE2# OE# WE# WP#/ACC RESET# RY/BY# VCC VSS NC = = = = = = = = = = 22 , tolerances) Device Ground Pin Not Connected Internally = = Logic Symbol 22 A21­A0 DQ15­DQ0 CE1# CE2 , Switches DQ15­DQ0 WE# ACC State Control Command Register PGM Voltage Generator Chip Enable Output , X-Decoder Cell Matrix January 26, 2004 S70JL128HA0 S70JL128H DQ15­DQ0 5 P r e l i m i n a
Spansion
Original
A21-A0 tray matrix bga S29JL064H

W764M32V1-XBX

Abstract: tCE tOH A25-A0 tDF CS# tDF tOE tOH OE# DQ15-DQ0 Back to Back Read Operation (tRC , tDF OE# DQ15-DQ0 FIGURE 4 â'" PAGE READ TIMING tACC A25-A4 A3-A0 tCE CS# tOE OE# tPACC DQ15-DQ0 NOTE: Word Configuration: Toggle A0, A1, A2, and A3. Microsemi Corporation , # tDS tDH DQ15-DQ0 FIGURE 8 â'" BACK TO BACK (CS#VIL) WRITE OPERATION TIMING DIAGRAM tWC A25-A0 tAS tAH tCS CS# OE# tWP tWPH WE# tDS tDH DQ15-DQ0 Microsemi Corporation reserves the
Microsemi
Original
W764M32V1-XBX W764M32V1-ESB

Microsemi

Abstract: tCE tOH A25-A0 tDF CS# tDF tOE tOH OE# DQ15-DQ0 Back to Back Read Operation (tRC , tDF OE# DQ15-DQ0 FIGURE 4 â'" PAGE READ TIMING tACC A25-A4 A3-A0 tCE CS# tOE OE# tPACC DQ15-DQ0 NOTE: Word Configuration: Toggle A0, A1, A2, and A3. Microsemi Corporation , CS# OE# tWP tWPH WE# tDS tDH DQ15-DQ0 FIGURE 8 â'" BACK TO BACK (CS#VIL) WRITE OPERATION TIMING DIAGRAM tWC A25-A0 tAS tAH tCS CS# OE# tWP tWPH WE# tDS tDH DQ15-DQ0
Microsemi
Original
Microsemi

bax 50

Abstract: or CE# is high. DQ15-DQ0 CE# Chip Enable To activate the Flash Bank w hen CE# is low. OE , -1 Flash Bank1 CE# OE# WE# WP# RY/BY# RESET# BYTE# DQ15-DQ0 Control Logic I/O Buffers & Data , CE# TOE OE# TOHZ TOLZ VIH WE# TCHZ TCLZ HIGH-Z DQ15-DQ0 TOH DATA VALID , 2AAA 5555 ADDR TDH TWP WE# TAS TDS TWPH OE# TCEH CE# TCES DQ15-DQ0 AA , OE# TWEH WE# TWES DQ15-DQ0 AA SW0 55 A0 SW1 DATA SW2 WORD (ADDR/DATA
SANYO Electric
Original
bax 50 1536K LE28DW1621T-80T LE28DW1621T 28DW1621TS
Abstract: tOE tOH OE# DQ15-DQ0 Back to Back Read Operation (tRC)Timing Diagram tRC tACC tOH , address change to initiate the second access. tOE tOH tDF OE# DQ15-DQ0 FIGURE 4 â'" PAGE READ TIMING tACC A25-A4 A3-A0 tCE CS# tOE OE# tPACC DQ15-DQ0 NOTE: Word Configuration , # tDS tDH DQ15-DQ0 FIGURE 8 â'" BACK TO BACK (CS#VIL) WRITE OPERATION TIMING DIAGRAM tWC A25-A0 tAS tAH tCS CS# OE# tWP tWPH WE# tDS tDH DQ15-DQ0 Microsemi Corporation reserves the Microsemi
Original
W764M32V-XSBX
Abstract: . DQ15-DQ0 OE# Output Enable To gate the data output buffers. WE# Write Enable To control , # WE# WP# RY/BY# RESET# BYTE# DQ15-DQ0 Control Logic I/O Buffers & Data Latches Figure2 , DQ15-DQ0 TOH DATA VALID HIGH-Z DATA VALID 28DW8163T\F3_E Exsample for Word Mode, in Byte Mode , CE# TCES DQ15-DQ0 AA SW0 55 SW1 A0 SW2 DATA WORD (ADDR/DATA) 28DW8163T\F4 , TWPH OE# TWEH WE# TWES DQ15-DQ0 AA SW0 55 A0 SW1 DATA SW2 WORD (ADDR SANYO Electric
Original
LE28DW8163T-80T LE28DW8163T
Abstract: tOE tOH OE# DQ15-DQ0 Back to Back Read Operation (tRC)Timing Diagram tRC tACC tOH , address change to initiate the second access. tOE tOH tDF OE# DQ15-DQ0 FIGURE 4 â'" PAGE READ TIMING tACC A25-A4 A3-A0 tCE CS# tOE OE# tPACC DQ15-DQ0 NOTE: Word Configuration , CS# OE# tWP tWPH WE# tDS tDH DQ15-DQ0 FIGURE 8 â'" BACK TO BACK (CS#VIL) WRITE OPERATION TIMING DIAGRAM tWC A25-A0 tAS tAH tCS CS# OE# tWP tWPH WE# tDS tDH DQ15-DQ0 Microsemi
Original
256MB

F14E

Abstract: F12E cycle. The outputs are in tristate when OE# is high or CE# is high. DQ15-DQ0 CE# Chip Enable , 512Kx16 Flash Bank2 A19-A0 CE# OE# WE# DQ15-DQ0 Control Logic I/O Buffers & Data Latches , ADDRESS A19- A0 TCE CE# TOE OE# TOHZ TOLZ VIH WE# TCHZ TCLZ HIGH-Z DQ15-DQ0 , # TAS TDS TWPH OE# TCEH CE# TCES DQ15-DQ0 AA SW0 55 SW1 A0 DATA SW2 , OE# TWEH WE# TWES DQ15-DQ0 AA SW0 55 A0 SW1 DATA SW2 WORD (ADDR/DATA
SANYO Electric
Original
LE28BW168T F14E F12E Sakata F13E 2596H

IR5L

Abstract: PLCC-44 cr16 pin assignments for the 44-pin PLCC are shown in Figures 2 and 3. Data/Command Bus DQ15-DQ0 The DQ15-DQ0 lines convey data, commands, and status to and from the QS761480/QS762470. The state of the WE , the information on the DQ15-DQ0 lines is interpreted as data or as a command or status. DQ0 is the , destination of the data input on the DQ15-DQ0 lines is the Instruction Register; in command read mode (CM is LOW, WE is HIGH), the default source of the data output on the DQ15-DQ0 lines is the Status Register
Quality Semiconductor
Original
QS761480 QS762470 IR5L PLCC-44 cr16 AR10-AR0 CMOS 16-Bit Priority Encoder 0804H MU9C1480/A MU9C2480/A MDSF-00021-02

LE28DW3212AT-80B

Abstract: sanyo sax 1024Kx16 A20-A0 CE# OE# WE# WP# RY/BY# RESET# BYTE# Flash Bank1 DQ15-DQ0 Control Logic I/O , ADDRESS A20- A0 TCE CE# TOE OE# TOHZ TOLZ VIH WE# TCHZ TCLZ HIGH-Z DQ15-DQ0 , DQ15-DQ0 AA SW0 55 SW1 A0 SW2 DATA WORD (ADDR/DATA) 28DW3212\F4-1_E Exsample for , OE# TWEH WE# TWES DQ15-DQ0 AA SW0 55 A0 SW1 SW2 DATA WORD (ADDR/DATA , 5555 5555 2AAA 5555 TAH TAS CE# OE# TDS TWPH TWP TDH WE# DQ15-DQ0
SANYO Electric
Original
LE28DW3212AT-80B sanyo sax 2048K LE28DW3212AT 28DW1621

NORFLASH

Abstract: HYE18P32160AC CellularRAM DQ15-DQ0 CS# WE# OE# UB# LB# (FBGA-54) CRE DQ15-DQ0 (FBGA-54) CRE A20-A0 , selected Control Register WE# UB#, LB# DQ15-DQ0 Don't Care Figure8 Control Register Write , # UB#, LB# WAIT# DQ15-DQ0 Don't Care Infineon Technologies Page 15 of 45 Version 1.8
Infineon Technologies
Original
NORFLASH HYE18P32160AC ic DPD HYE18P32160AC-9 FBGA-48 FBGA-56

INDEPENDENT INK 73X

Abstract: CEF-A21 periods of time. Pin Description A18­A0 A21­A19, A-1 SA DQ15­DQ0 CE#f CE#s OE# WE# RY/BY# UB# LB# CIOf , CE#f CE1#s CE2s OE# WE# WP#/ACC RESET# UB# LB# CIOf CIOs RY/BY# DQ15­DQ0 16 or 8 February 25, 2004 , A21­A19 DQ15­DQ0 CE#f CE1#s CE2s OE# WE# RY/BY# UB# LB# RESET# WP#/ACC VCCf VCCs VSS NC = = = = = = = = = , # WP#/ACC RESET# UB# LB# RY/BY# DQ15­DQ0 16 February 25, 2004 S71JLxxxHxx_00A1 15 P r e l i m , periods of time. Pin Description A19­A0 A21­A20 DQ15­DQ0 CE#f CE#s OE# WE# RY/BY# UB# LB# RESET# WP
Advanced Micro Devices
Original
INDEPENDENT INK 73X CEF-A21 71jl128 bonus ball sheets S71JL064HA0BAW01 S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 S71JL S71JL064H80 S71JL064HA0 S71JL064HB0

EN71PL032A0

Abstract: H7 RF ) DQ15-DQ0 CE1#f DQ15-DQ0 CE1#f Chip Enable 1 (pSRAM) CE1#s CE1#ps Chip Enable 2 (pSRAM
Eon Silicon Solution
Original
EN71PL032A0 S71GL032N40 EN71PL064A0 H7 RF EN71PL064 SUNNY A0-A21 001CH 0001H

EN71PL064

Abstract: H7 RF A0-A21 Data Inputs/Outputs (Common) Chip Enable 1 (Flash) DQ15-DQ0 CE1#f DQ15-DQ0 CE1#f
Eon Silicon Solution
Original
EN71PL S71PL064A0

SH7709S

Abstract: HM5225165B-B6 or CE# is high. DQ15-DQ0 CE# Chip Enable To activate the Flash Bank w hen CE# is low. OE , -1 Flash Bank1 CE# OE# WE# WP# RY/BY# RESET# BYTE# DQ15-DQ0 Control Logic I/O Buffers & Data , CE# TOE OE# TOHZ TOLZ VIH WE# TCHZ TCLZ HIGH-Z DQ15-DQ0 TOH DATA VALID , 2AAA 5555 ADDR TDH TWP WE# TAS TDS TWPH OE# TCEH CE# TCES DQ15-DQ0 AA , OE# TWEH WE# TWES DQ15-DQ0 AA SW0 55 A0 SW1 DATA SW2 WORD (ADDR/DATA
Renesas Technology
Original
SH7727 HM5257165B-A6 SH7709S HM5225165B-B6 SH7706 SH7729R SH7709S/SH7729R/SH7706/SH7727 FFFFE000 512-M

DQ0-DQ15

Abstract: 28F016SA organization. The BYTE# pin controls whether the device data I/O pins DQ15-DQ0 operate in the byte or word configuration. If the BYTE# pin is set at logic '1', the device is in word configuration and DQ15-DQ0 are , , DQ15-DQ0, and the second flash is connected to the high word lane, DQ23 to DQ16 (Figure 2.1). To address , device is configured as x16 or word mode, as in this design example, data I/O pins DQ15-DQ0 become , command, DQ15-DQ0 data bits are used to set appropriate word count (WC). Since maximum word count is 16
SiliconTech
Original
E28F016SV-070 28F016SA DQ16-DQ31 DQ0-DQ15 80 pin flash SL29160-70 E28F016SV

SA34-SA31

Abstract: S29JL032H cycle. The outputs are in tristate when OE# is high or CE# is high. DQ15-DQ0 CE# Chip Enable , 512Kx16 Flash Bank2 A19-A0 CE# OE# WE# DQ15-DQ0 Control Logic I/O Buffers & Data Latches , ADDRESS A19- A0 TCE CE# TOE OE# TOHZ TOLZ VIH WE# TCHZ TCLZ HIGH-Z DQ15-DQ0 , # TAS TDS TWPH OE# TCEH CE# TCES DQ15-DQ0 AA SW0 55 SW1 A0 DATA SW2 , OE# TWEH WE# TWES DQ15-DQ0 AA SW0 55 A0 SW1 DATA SW2 WORD (ADDR/DATA
Spansion
Original
S29JL032H SA34-SA31 S29JL032HA11 MO-142 5M-1982 A2004

0365H

Abstract: tOE tOH OE# DQ15-DQ0 Back to Back Read Operation (tRC)Timing Diagram tRC tACC tOH , address change to initiate the second access. tOE tOH tDF OE# DQ15-DQ0 FIGURE 4 â'" PAGE READ TIMING tACC A25-A4 A3-A0 tCE CS# tOE OE# tPACC DQ15-DQ0 NOTE: Word Configuration , CS# OE# tWP tWPH WE# tDS tDH DQ15-DQ0 FIGURE 8 â'" BACK TO BACK (CS#VIL) WRITE OPERATION TIMING DIAGRAM tWC A25-A0 tAS tAH tCS CS# OE# tWP tWPH WE# tDS tDH DQ15-DQ0
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OCR Scan
0365H MU9C1485 MU9C2485A MU9C1965A MU9C2480A
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