NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: A0-A19 A0-A19 /WE /OE /CE03 /CE03 A-A19 /WE /OE A0-A19 A0-A19 /WE /OE A0-A19 A0-A19 /WE /OE U2 DQ0-3 , DQ0-3 /CE U7 /CE13 /CE13 /CE U12 DQ4-7 /CE A0-A19 A0-A19 /WE /OE U13 U18 DQ12-15 DQ12-15 A0-A19 A0-A19 /WE /OE U15 A0-A19 A0-A19 /WE /OE DQ4-7 /CE DQ8-11 DQ8-11 /CE /CE DQ0-3 /CE , /OE U8 DQ8-11 DQ8-11 /CE04 /CE04 A0-A19 A0-A19 /WE /OE U11 DQ0-3 A0-A19 A0-A19 /WE /OE U4 DQ8-11 DQ8-11 U5 ... | Original |
8 pages, |
HMS4M16F16G 177986-1 HMS4M16F16G abstract |
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| Abstract: 23 47 Vss E0\ DQ28 24 46 DQ03 E1\ DQ29 25 45 DQ02 E2 , DQ28 DQ28 24 46 DQ03 DQ03 DQ03 DQ29 DQ29 DQ29 25 45 DQ02 DQ02 ... | Original |
7 pages, |
DQ06 ASYNC SRAM dq09 64Mb-SRAM AS8S2M32PEC AS8SLC2M32PEC AS8S2M32 AS8S2M32PEC abstract |
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| Abstract: /CE0l A0-A19 A0-A19 /WE U1 DQ0-3 /OE /CE A0-A19 A0-A19 /WE U9 DQ0-3 /OE /CE /CE11 /CE11 A0-A19 A0-A19 /WE U2 , A0-A19 A0-A19 /WE U12 DQ12-15 DQ12-15 /OE /CE A0-A19 A0-A19 /WE U13 DQ0-3 /OE /CE U5 DQ0-3 /OE A0-A19 A0-A19 /WE ... | Original |
10 pages, |
transistor marking A19 HMS4M16M16G HMS4M16M16G abstract |
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| Abstract: Output Enable DQ0-31 Common Data Input/Output V CC Power (+5V ±5%) VSS Ground NC , DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 WORD3 DQ17 ... | Original |
8 pages, |
EDI8L32512C DSP96002 DQ06 4 PLCC weight M0-47AE EDI8L32512C abstract |
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| Abstract: 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Master Output Enable DQ0-31 , DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 WORD3 DQ17 ... | Original |
8 pages, |
TMS320C32 PLCC weight EDI8L32512C EDI8L32256C EDI8L24128C DSP96002 dq08 M0-47AE DSP96002 abstract |
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| Abstract: E1\ DQ8-15 DQ8-15 E2\ DQ16-23 DQ16-23 E3\ DQ24-31 DQ24-31 DQ03 E1\ DQ29 25 45 DQ02 E2\ DQ8-DQ15 DQ8-DQ15 , DQ03 DQ03 DQ03 DQ29 DQ29 DQ29 25 45 DQ02 DQ02 DQ02 DQ30 DQ30 ... | Original |
7 pages, |
AS8SLC2M32PEC AS8S512K32PEC AS8S512K32 AS8S512K32PEC abstract |
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| Abstract: Write Enable G Master Output Enable E0 DQ0-7 DQ0-31 Common Data Input/Output E1 , GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ31 A6 A5 A4 ... | Original |
8 pages, |
TMS320C32 TMS320C30 EDI8L32512C EDI8L32256C EDI8L24128C DSP96002 block diagram of of TMS320C4X 8l32128c M0-47AE EDI8L32512C abstract |
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| Abstract: E1\ DQ8-15 DQ8-15 E2\ DQ16-23 DQ16-23 E3\ DQ24-31 DQ24-31 DQ03 E1\ DQ29 25 45 DQ02 E2\ DQ8-DQ15 DQ8-DQ15 , DQ03 DQ03 DQ03 DQ29 DQ29 DQ29 25 45 DQ02 DQ02 DQ02 DQ30 DQ30 ... | Original |
7 pages, |
AS8SLC2M32PEC AS8S512K32PEC AS8S512K32 AS8S512K32PEC abstract |
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| Abstract: Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 PIN NAMES A0 - A18 E0\ - E3\ W , DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 11 ... | Original |
8 pages, |
AS8SLC512K32PECA M0-47AE AS8SLC512K32PECA abstract |
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| Abstract: DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 PIN NAMES A0 - A18 , DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 11 ... | Original |
8 pages, |
AS8S512K32PECA M0-47AE AS8S512K32PECA abstract |
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| Abstract: 256MB 256MB, 512MB 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004 256MB 256MB, 512MB 512MB, 1GB Registered DIMM SDRAM Revision History Revision 0.0 (June, 2003) - First release Revision 1.0 (June, 2003) - Revision 1.0 release. Revision 1.1 (September, 2003) - Corrected typo. Revision ... | Original |
26 pages, |
M390S3253ETU-C7A pc133 sdram 512mb ECC unbuffered M390S6453ET1-C7A M390S6450ETU-C7A M390S6450ET1-C7A K4S560832E M390S3253ET1-C7A M390S2858ETU-C7A M390S2858ET1-C7A b1a12 256MB 512MB 256MB abstract |
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| Abstract: 512MB 512MB, 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb B-die with 72-bit ECC Revision 1.0 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January 2004 512MB 512MB, 1GB, 2GB Registered DIMM SDRAM Revision History Revision 1.0 (January, 2004) - First release Rev. 1.0 January 2004 512MB 512MB, 1GB, 2GB Registered DIMM SDRAM 168Pin Registered DIMM based on ... | Original |
26 pages, |
M390S6553BTU-C7A M390S6553BT1-C7A M390S5658BTU-C7A M390S5658BT1-C7A M390S2953BT1-C7A M390S2950BTU-C7A b1a12 512MB 512MB abstract |
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| Abstract: 256MB 256MB, 512MB 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004 256MB 256MB, 512MB 512MB, 1GB Registered DIMM SDRAM Revision History Revision 0.0 (June, 2003) - First release Revision 1.0 (June, 2003) - Revision 1.0 release. Revision 1.1 (September, 2003) - Corrected typo. ... | Original |
26 pages, |
K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A M390S6453ET1-C7A pc133 sdram 512mb ECC unbuffered 256MB 512MB 256MB abstract |
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| Abstract: White Electronic Designs WV3DG72256V-AD2 WV3DG72256V-AD2 PRELIMINARY 2GB 2x128Mx72 SDRAM, REGISTERED FEATURES DESCRIPTION Burst Mode Operation The WV3DG72256V WV3DG72256V is a 2x128Mx72 synchronous DRAM module which consists of eighteen 256Mx4 stack SDRAM components (stacked from 128Mx4) in TSOP II package, two 18 bit Drive ICs for input control signal and one 2Kb EEPROM in an 8 pin TSSOP package for Serial Presence Detect which are mounted on a 168 pin DIMM multilayer FR4 Substrate. Auto and Se ... | Original |
9 pages, |
WV3DG72256V-AD2 b1a12 datasheet abstract |
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| Abstract: Preliminary PC133 PC133 Registered DIMM M390S5658MT1 M390S5658MT1 M390S5658MT1 M390S5658MT1 SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MT1 M390S5658MT1 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S5658MT1 M390S5658MT1 consists of eighteen CMOS Stacked 256Mx4 bit Synchronous DRAMs in two TSOP-II 400mil packages, three 18-bits Drive ICs for input control signal, one PLL in 24-p ... | Original |
10 pages, |
M390S5658MT1-C75 M390S5658MT1 B1a12 DIN 7340 PC133 M390S5658MT1 abstract |
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| Abstract: KMM390S6428T KMM390S6428T PC133 PC133 SDRAM MODULE Revision History Revision 0 (Feb. 1999) · PC133 PC133 first published Revision 0.1 (Apr. 2000) Added the description of "Staktek' stacking technology is Samsung' stacking technology of choice" s s REV. 0.1 Apr. 2000 KMM390S6428T KMM390S6428T PC133 PC133 SDRAM MODULE KMM390S6428T KMM390S6428T SDRAM DIMM (RCC 0.8ver. Base) 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION · Performance rang ... | Original |
11 pages, |
KMM390S6428T-GA KMM390S6428T PC133 KMM390S6428T abstract |
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| Abstract: KMM390S2858AT1 KMM390S2858AT1 PC133 PC133 Registered DIMM Revision History Revision 0.0 (May. 1999) · PC133 PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 PC133 Specification" at Package Dimensions Revision 0.2 (Apr. 2000) Added the description of "Staktek' stacking technology is Samsung' stacking technology of choice" s s REV. 0.2 Apr. 2 ... | Original |
11 pages, |
KMM390S2858AT1-GA d14l KMM390S2858AT1 PC133 KMM390S2858AT1 abstract |
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| Abstract: PC100 PC100 Registered DIMM M377S6428MT3 M377S6428MT3 M377S6428MT3 M377S6428MT3 SDRAM DIMM (Intel 1.2 ver Base) 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION · Performance range The Samsung M377S6428MT3 M377S6428MT3 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S6428MT3 M377S6428MT3 consists of eighteen CMOS Stacked 64Mx4 bit Synchronous DRAMs in two TSOP-II 400mil packages, three 18-bits Drive ICs for input cont ... | Original |
10 pages, |
M377S6428MT3-C1L M377S6428MT3-C1H M377S6428MT3 PC100 M377S6428MT3 abstract |
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| Abstract: KMM390S6428T KMM390S6428T Preliminary PC133 PC133 SDRAM MODULE Revision History Revision 0 (Feb. 1999) · PC133 PC133 first published REV. 0 Feb. 1999 Preliminary PC133 PC133 SDRAM MODULE KMM390S6428T KMM390S6428T KMM390S6428T KMM390S6428T SDRAM DIMM (RCC 0.8ver. Base) 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION · Performance range The Samsung KMM390S6428T KMM390S6428T is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsu ... | Original |
11 pages, |
KMM390S6428T-GA KMM390S6428T PC133 KMM390S6428T abstract |
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| Abstract: KMM390S2858AT KMM390S2858AT Preliminary PC133 PC133 SDRAM MODULE Revision History Revision 0 (Feb. 1999) · PC133 PC133 first published REV. 0 Feb. 1999 Preliminary PC133 PC133 SDRAM MODULE KMM390S2858AT KMM390S2858AT KMM390S2858AT KMM390S2858AT SDRAM DIMM (RCC 0.8 ver. Base) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM390S2858AT KMM390S2858AT is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM390S2858AT KMM390S2858AT ... | Original |
11 pages, |
KMM390S2858AT-GA b1a12 KMM390S2858AT PC133 KMM390S2858AT abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 100N 10TQ Series 11DQ03 Series 11DQ04 11DQ04 11DQ04 11DQ04 Series 11DQ05 11DQ05 11DQ05 11DQ05 Series 11DQ06 11DQ06 11DQ06 11DQ06 Series 11DQ 04FN 30WQ05F 30WQ05F 30WQ05F 30WQ05F 30WQ06F 30WQ06F 30WQ06F 30WQ06F 30WQ06FN 30WQ06FN 30WQ06FN 30WQ06FN 30WQ09F 30WQ09F 30WQ09F 30WQ09F 30WQ10F 30WQ10F 30WQ10F 30WQ10F 30WQ10FN 30WQ10FN 30WQ10FN 30WQ10FN 31DQ03 31DQ04 31DQ04 31DQ04 31DQ04 31DQ www.datasheetarchive.com/files/international-rectifier/docs/wcd00000/wcd000e4.htm |
International Rectifier | 06/10/1998 | 14.99 Kb | HTM | wcd000e4.htm |
| : - - - - - - - - 11DQ03 DO-41 DO-41 DO-41 DO-41 (DO-204AL DO-204AL DO-204AL DO-204AL) DISCRETE 30 1.1 58 0.55 1 125 11DQ04 11DQ04 11DQ04 11DQ04 DO-41 DO-41 DO-41 DO-41 (DO www.datasheetarchive.com/files/international-rectifier/product-info/shortform/dslink/dk-124.html |
International Rectifier | 24/07/2000 | 9.78 Kb | HTML | dk-124.html |
| : - - - - - - - - 31DQ03 DO-201AD DO-201AD DO-201AD DO-201AD DISCRETE 30 3.3 35 0.55 3 125 31DQ04 31DQ04 31DQ04 31DQ04 DO-201AD DO-201AD DO-201AD DO-201AD www.datasheetarchive.com/files/international-rectifier/product-info/shortform/dslink/dk-98.html |
International Rectifier | 24/07/2000 | 9.73 Kb | HTML | dk-98.html |
| *= *Schottky Diode Pinout: 1=A, 2=K *= *Default schottky diode parameters pkg:DO-41 DO-41 DO-41 DO-41 1,2 .PARAM DSKYDIODE~ File:Mcediode.lib *MCE 30V 1.1A pkg:DIODE0.4 1,2 .PARAM D11DQ03 File:Mcediode.lib *MCE 40V 1.1A pkg:DIODE0.4 1,2 .PARAM D11DQ04 D11DQ04 D11DQ04 D11DQ04 File:Mcediode.lib *MCE 50V 1.1A pkg:DIODE0.4 1,2 .PARAM D11DQ05 D11DQ05 D11DQ05 D11DQ05 File:Mcediode.lib *MCE 60V 1.1A pkg:DIODE0.4 1,2 .PARAM D11DQ06 D11DQ06 D11DQ06 D11DQ06 File:Mcediode.lib *MCE 90V 1.1A pkg:DIODE0.4 1,2 .PARAM D11DQ09 D11DQ09 D11DQ09 D11DQ09 File www.datasheetarchive.com/files/spicemodels/misc/modelos/schottky.mod |
Spice Models | 21/02/2008 | 1.11 Kb | MOD | schottky.mod |
| *= *Schottky Diode Pinout: 1=A, 2=K *= *Default schottky diode parameters pkg:DO-41 DO-41 DO-41 DO-41 1,2 .PARAM DSKYDIODE~ File:Mcediode.lib *MCE 30V 1.1A pkg:DIODE0.4 A,K .PARAM D11DQ03 File:Mcediode.lib *MCE 40V 1.1A pkg:DIODE0.4 A,K .PARAM D11DQ04 D11DQ04 D11DQ04 D11DQ04 File:Mcediode.lib *MCE 50V 1.1A pkg:DIODE0.4 A,K .PARAM D11DQ05 D11DQ05 D11DQ05 D11DQ05 File:Mcediode.lib *MCE 60V 1.1A pkg:DIODE0.4 A,K .PARAM D11DQ06 D11DQ06 D11DQ06 D11DQ06 File:Mcediode.lib *MCE 90V 1.1A pkg:DIODE0.4 A,K .PARAM D11DQ09 D11DQ09 D11DQ09 D11DQ09 File www.datasheetarchive.com/files/spicemodels/misc/models/schottky.mod |
Spice Models | 17/09/2010 | 1.11 Kb | MOD | schottky.mod |
| : inout bit; DDR_DQ02 : inout bit; DDR_DQ03 : inout bit; DDR_DQ04 _CLKP :W9," & "DDR_CSN :T8," & "DDR_DQ00 :V11," & "DDR_DQ01 :W11," & "DDR_DQ02 :U11," & "DDR_DQ03 :T11 , *, control, 1)," & "312 (bc_1, DDR_DQ03, output3, X, 311, 1, Z)," & "313 (bc_1, DDR_DQ03, input, X)," & "314 (bc_1, *, control, 1)," & "315 (bc_1 www.datasheetarchive.com/download/65416908-921943ZC/sprm262b.zip (TMS320DM355_ZCE.bsm) |
Texas Instruments | 06/08/2011 | 8.94 Kb | ZIP | sprm262b.zip |
| : inout bit; DDR_DQ02 : inout bit; DDR_DQ03 : inout bit; DDR_DQ04 _CLKP :W9," & "DDR_CSN :T8," & "DDR_DQ00 :V11," & "DDR_DQ01 :W11," & "DDR_DQ02 :U11," & "DDR_DQ03 :T11 , *, control, 1)," & "312 (bc_1, DDR_DQ03, output3, X, 311, 1, Z)," & "313 (bc_1, DDR_DQ03, input, X)," & "314 (bc_1, *, control, 1)," & "315 (bc_1 www.datasheetarchive.com/download/11632574-921957ZC/sprm318.zip (TMS320DM335_ZCE.bsm) |
Texas Instruments | 06/08/2011 | 8.37 Kb | ZIP | sprm318.zip |
| DQ01 OBUFFER |A23 DQ01 HIGHOBUFFER A24 DQ03 OBUFFER |A24 DQ03 HIGHOBUFFER A25 DQ05 OBUFFER |A25 DQ05 HIGHOBUFFER A26 www.datasheetarchive.com/download/951481-279824ZC/80960r~1.rtf |
Intel | 25/02/1999 | 193.67 Kb | RTF | 80960r~1.rtf |
| DCLKOBUFFER A23 DQ01 OBUFFER |A23 DQ01 HIGHOBUFFER A24 DQ03 OBUFFER |A24 DQ03 HIGHOBUFFER A25 DQ05 OBUFFER |A25 DQ05 www.datasheetarchive.com/download/68188590-279825ZC/80960r~2.rtf |
Intel | 25/02/1999 | 194.35 Kb | RTF | 80960r~2.rtf |
| :DIODE0.4 1,2 .MODEL SKYDIODE~ D(EG=0.69 XTI=2) *11DQ03 MCE 7-17-95 *Ref: IR Power Semiconductors Product Digest '94 *MCE 30V 1.1A pkg:DIODE0.4 1,2 .MODEL 11DQ03 D(IS=5.18E-9 18E-9 18E-9 18E-9 RS=0.146 N=0.878 TT=4.32E-6 32E-6 32E-6 32E-6 www.datasheetarchive.com/files/spicemodels/misc/models/mcediode.lib |
Spice Models | 17/09/2010 | 36.25 Kb | LIB | mcediode.lib |