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DQ03

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Abstract: provisions at the end of this document. Page: 4 of 14 ^ CELESTICA- 2M x 32 FPM SIMM DQ0-35 BflS CflS i> DQ0-3 DQ0-3 CAS DQ0-3 DQ0-3 U1 WE oe U9 WE OE A0-9 «0-9 DOB-3 DQ4-? rSs RAS 5^ O W E OE DQ0-3 DQ4-7 U2 H E 4-5Ê BPS A0-S DQ0-3 D09-12 D09-12 U10 A0-9 DQ0-3 DQ9-12 DQ9-12 Sas CAS U3 WE U ll «0-9 A--9 RAS CAS DQ0-3 D013-16 D013-16 ... OCR Scan
datasheet

14 pages,
1025.96 Kb

datasheet abstract
datasheet frame
Abstract: A0-A19 A0-A19 /WE /OE /CE03 /CE03 A-A19 /WE /OE A0-A19 A0-A19 /WE /OE A0-A19 A0-A19 /WE /OE U2 DQ0-3 , DQ0-3 /CE U7 /CE13 /CE13 /CE U12 DQ4-7 /CE A0-A19 A0-A19 /WE /OE U13 U18 DQ12-15 DQ12-15 A0-A19 A0-A19 /WE /OE U15 A0-A19 A0-A19 /WE /OE DQ4-7 /CE DQ8-11 DQ8-11 /CE /CE DQ0-3 /CE , /OE U8 DQ8-11 DQ8-11 /CE04 /CE04 A0-A19 A0-A19 /WE /OE U11 DQ0-3 A0-A19 A0-A19 /WE /OE U4 DQ8-11 DQ8-11 U5 ... Original
datasheet

8 pages,
72.6 Kb

HMS4M16F16G 177986-1 HMS4M16F16G abstract
datasheet frame
Abstract: W G DQ0-31 V CC VSS NC Note: For memory upgrade information, refer to Page 8, Figure 13 "EDI , GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ31 A6 A5 A4 A3 A2 A1 A0 VCC A13 A12 A11 A10 A09 A08 A07 DQ00 DQ31 A6 A5 A4 A3 A2 ... Original
datasheet

8 pages,
138.76 Kb

dq09 DQ04 block diagram of of TMS320C4X 512C 8L32512 EDI8L32512C DSP96002 M0-47AE EDI8L32512C abstract
datasheet frame
Abstract: 46 45 44 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 Electronic Designs Incorporated · One Research Drive · ... Original
datasheet

8 pages,
89.04 Kb

8L32512 block diagram of of TMS320C4X EDI8L32512C DSP96002 M0-47AE EDI8L32512C abstract
datasheet frame
Abstract: Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 PIN NAMES A0 - A18 E0\ - E3\ W , DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 11 ... Original
datasheet

8 pages,
197.26 Kb

AS8S512K32PEC MO-47AE 64Mb-SRAM AS8SLC512K32PECA M0-47AE AS8SLC512K32PECA abstract
datasheet frame
Abstract: DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 PIN NAMES A0 - A18 , DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 11 ... Original
datasheet

8 pages,
196.5 Kb

DQ04 64Mb-SRAM AS8S512K32PECA M0-47AE AS8S512K32PECA abstract
datasheet frame
Abstract: 23 47 Vss E0\ DQ28 24 46 DQ03 E1\ DQ29 25 45 DQ02 E2 , DQ28 DQ28 24 46 DQ03 DQ03 DQ03 DQ29 DQ29 DQ29 25 45 DQ02 DQ02 ... Original
datasheet

7 pages,
133.46 Kb

ASYNC SRAM AS8S2M32PEC-12 64MB SRAM dq09 DQ06 AS8S2M32PEC 64Mb-SRAM AS8SLC2M32PEC AS8S2M32 AS8S2M32PEC abstract
datasheet frame
Abstract: /CE0l A0-A19 A0-A19 /WE U1 DQ0-3 /OE /CE A0-A19 A0-A19 /WE U9 DQ0-3 /OE /CE /CE11 /CE11 A0-A19 A0-A19 /WE U2 , A0-A19 A0-A19 /WE U12 DQ12-15 DQ12-15 /OE /CE A0-A19 A0-A19 /WE U13 DQ0-3 /OE /CE U5 DQ0-3 /OE A0-A19 A0-A19 /WE ... Original
datasheet

10 pages,
239.97 Kb

transistor marking A19 HMS4M16M16G HMS4M16M16G abstract
datasheet frame
Abstract: Output Enable DQ0-31 Common Data Input/Output V CC Power (+5V ±5%) VSS Ground NC , DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 GND DQ11 DQ10 DQ09 DQ08 VCC DQ07 DQ06 DQ05 DQ04 GND DQ03 DQ02 DQ01 WORD3 DQ17 ... Original
datasheet

8 pages,
205.48 Kb

EDI8L32512C DSP96002 DQ06 4 DQ04 PLCC weight M0-47AE EDI8L32512C abstract
datasheet frame
Abstract: DQ03 DQ02 DQ01 PIN NAMES A0 - A18 E0\ - E3\ W\ G\ DQ0 - DQ31 Vcc Vss NC Address Inputs Chip , DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ09 DQ08 Vcc DQ07 DQ06 DQ05 DQ04 Vss DQ03 DQ02 DQ01 11 59 12 58 13 57 14 56 15 55 16 54 ... Original
datasheet

7 pages,
149.81 Kb

AS8SLC512K32PEC PCN-1109 AS8SLC512K32PECA AS8SLC512K32PEC abstract
datasheet frame
Abstract: 256MB 256MB, 512MB 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004 256MB 256MB, 512MB 512MB, 1GB Registered DIMM SDRAM Revision History Revision 0.0 (June, 2003) - First release Revision 1.0 (June, 2003) - Revision 1.0 release. Revision 1.1 (September, 2003) - Corrected typo. ... Original
datasheet

26 pages,
657.47 Kb

M390S3253ETU-C7A pc133 sdram 512mb ECC unbuffered M390S6453ET1-C7A M390S6450ETU-C7A M390S6450ET1-C7A K4S560832E M390S3253ET1-C7A M390S2858ETU-C7A M390S2858ET1-C7A b1a12 256MB 512MB 256MB abstract
datasheet frame
Abstract: 512MB 512MB, 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb B-die with 72-bit ECC Revision 1.0 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January 2004 512MB 512MB, 1GB, 2GB Registered DIMM SDRAM Revision History Revision 1.0 (January, 2004) - First release Rev. 1.0 January 2004 512MB 512MB, 1GB, 2GB Registered DIMM SDRAM 168Pin Registered DIMM based on ... Original
datasheet

26 pages,
655.62 Kb

K4S1G0632B- K4S510832 M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S1G0632B b1a12 512MB 512MB abstract
datasheet frame
Abstract: 256MB 256MB, 512MB 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004 256MB 256MB, 512MB 512MB, 1GB Registered DIMM SDRAM Revision History Revision 0.0 (June, 2003) - First release Revision 1.0 (June, 2003) - Revision 1.0 release. Revision 1.1 (September, 2003) - Corrected typo. Revision ... Original
datasheet

26 pages,
658.51 Kb

M390S3253ETU-C7A pc133 sdram 512mb ECC unbuffered M390S6453ET1-C7A M390S6450ETU-C7A M390S6450ET1-C7A K4S560832E M390S3253ET1-C7A M390S2858ETU-C7A M390S2858ET1-C7A b1a12 256MB 512MB 256MB abstract
datasheet frame
Abstract: 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb D-die 54 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDE ... Original
datasheet

23 pages,
664.56 Kb

K4S1G0632D B1A10 b1a12 datasheet abstract
datasheet frame
Abstract: 256MB 256MB, 512MB 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.6 October 2006 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.6 Oct. 2006 256MB 256MB, 512MB 512MB, 1GB Registered DIMM Revision History Revision 0.0 (June, 2003) - First release Revision 1.0 (June, 2003) - Revision 1.0 release. Revision 1.1 (September, 2003) - Corrected typo. Revision 1.2 (February ... Original
datasheet

26 pages,
776.35 Kb

256MB 512MB 256MB abstract
datasheet frame
Abstract: White Electronic Designs 2GB ­ 2x128Mx72 SDRAM, REGISTERED FEATURES Burst Mode Operation Auto and Self Refresh capability LVTTL compatible inputs and outputs Serial Presence Detect with EEPROM Fully synchronous: All signals are registered on the positive edge of the system clock Programmable Burst Lengths: 1, 2, 4, 8 or Full Page 3.3V ± 0.3V Power Supply Dual Rank 168 Pin DIMM JEDEC · PCB - AD2: 28.58mm (1.125") TYP WV3DG72256V-AD2 WV3DG72256V-AD2 PRELIMINARY DESCRIPTION The WV3DG72256V WV3DG72256V is a ... Original
datasheet

9 pages,
269.96 Kb

b1a12 datasheet abstract
datasheet frame
Abstract: KMM390S6428T KMM390S6428T PC133 PC133 SDRAM MODULE Revision History Revision 0 (Feb. 1999) · PC133 PC133 first published Revision 0.1 (Apr. 2000) Added the description of "Staktek' stacking technology is Samsung' stacking technology of choice" s s REV. 0.1 Apr. 2000 KMM390S6428T KMM390S6428T PC133 PC133 SDRAM MODULE KMM390S6428T KMM390S6428T SDRAM DIMM (RCC 0.8ver. Base) 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION · Performance rang ... Original
datasheet

11 pages,
244.48 Kb

PC133 registered reference design KMM390S6428T-GA KMM390S6428T PC133 KMM390S6428T abstract
datasheet frame
Abstract: Preliminary PC133 PC133 Registered DIMM M390S5658MT1 M390S5658MT1 M390S5658MT1 M390S5658MT1 SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MT1 M390S5658MT1 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S5658MT1 M390S5658MT1 consists of eighteen CMOS Stacked 256Mx4 bit Synchronous DRAMs in two TSOP-II 400mil packages, three 18-bits Drive ICs for input control signal, one PLL in 24-p ... Original
datasheet

10 pages,
222.32 Kb

PC133 registered reference design M390S5658MT1-C75 M390S5658MT1 B1a12 DIN 7340 PC133 M390S5658MT1 abstract
datasheet frame
Abstract: KMM390S6428AT1 KMM390S6428AT1 PC133 PC133 Registered DIMM Revision History Revision 0.0 (May. 1999) · PC133 PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 PC133 Specification" at Package Dimensions Revision 0.2 (Apr. 2000) Added the description of "Staktek' stacking technology is Samsung' stacking technology of choice" s s REV. 0.2 Apr. 2 ... Original
datasheet

11 pages,
245.84 Kb

PC133 registered reference design KMM390S6428AT1-GA KMM390S6428AT1 PC133 KMM390S6428AT1 abstract
datasheet frame
Abstract: Preliminary PC100 PC100 Registered DIMM M377S5658MT3 M377S5658MT3 M377S5658MT3 M377S5658MT3 SDRAM DIMM (Intel 1.2 ver Base) 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S5658MT3 M377S5658MT3 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S5658MT3 M377S5658MT3 consists of eighteen CMOS Stacked 256Mx4 bit Synchronous DRAMs in two TSOP-II 400mil packages, three 18-bits Drive ICs for input control sig ... Original
datasheet

10 pages,
220.93 Kb

M377S5658MT3-C1L M377S5658MT3-C1H M377S5658MT3 PC100 M377S5658MT3 abstract
datasheet frame

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Intel 25/02/1999 193.67 Kb RTF 80960r~1.rtf
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Xilinx 05/09/1996 1743.89 Kb UUE 4kefixhp.uue
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Kaleidoscope 10/04/2005 22278.99 Kb HQX mccad_eds_for_macos.hqx
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www.datasheetarchive.com/download/4665715-741772ZC/30905-v1.pl
SGS-Thomson 12/05/1995 211.58 Kb PL 30905-v1.pl
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SGS-Thomson 07/08/1995 199.3 Kb PL 30969.pl
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SGS-Thomson 07/08/1995 397.39 Kb PL 30715.pl
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SGS-Thomson 07/08/1995 222.21 Kb PL 30745.pl
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Motorola 12/09/1996 5721.56 Kb HQX 860umsea.hqx
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SGS-Thomson 12/05/1995 227.41 Kb PL 30712-v1.pl