DMB54D0UDW AEC-Q101 J-STD-020D MIL-STD-202 AP02001 DS31677 DMB54D0UDW-7 - Datasheet Archive

 

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR NEW PRODUCT Features · · · · · ·

 

DMB54D0UDW DMB54D0UDW N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR NEW PRODUCT Features · · · · · · · · · · · Mechanical Data N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) ESD Protected MOSFET Gate up to 2kV "Green" Device (Note 3) Qualified to AEC-Q101 AEC-Q101 Standards for High Reliability · · · · · · · · Case: SOT-363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D J-STD-020D Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 lead frame. Solderable per MIL-STD-202 MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.006 grams (approximate) SOT-363 D2 B E Q1 S2 ESD protected gate up to 2kV Maximum Ratings ­ MOSFET, Q1 Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1) TOP VIEW Q2 G2 C TOP VIEW Internal Schematic @TA = 25°C unless otherwise specified Continuous Symbol VDSS VGSS ID IDM Value 50 ±12 160 560 Units V V mA mA Value -50 -45 -5.0 -100 Unit V V V mA Value 250 500 -55 to +150 Unit mW °C/W °C Maximum Ratings - PNP Transistor, Q2 @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Characteristics, Total Device Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: Symbol VCBO VCEO VEBO IC @TA = 25°C unless otherwise specified Symbol PD RJA TJ, TSTG 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001 AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Diodes Inc.'s "Green" policy can be found on our website at . DMB54D0UDW DMB54D0UDW Document number: DS31677 DS31677 Rev. 3 - 2 1 of 6 www.diodes.com March 2009 © Diodes Incorporated DMB54D0UDW DMB54D0UDW Electrical Characteristics - MOSFET NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS 50 10 V A IGSS 1.0 A ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) 0.7 0.8 3.1 4 1.0 4 5 Gate-Body Leakage 5.0 V Forward Transconductance gFS 180 mS DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss 25 5 2.1 pF pF pF Test Condition VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = 250A VGS = 4V, ID = 100mA VGS = 2.5V, ID = 80mA VDS = 10V, ID = 100mA, f = 1.0KHz VDS = 10V, VGS = 0V, f = 1.0MHz Electrical Characteristics - PNP Transistor @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage (Note 4) Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage (Note 4) DC Current Gain (Note 4) Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE Min -50 -45 -5 220 Typ - - - 290 - - Max - - - 475 -100 -400 Collector-Emitter Saturation Voltage (Note 4) VCE(SAT) - Base-Emitter Saturation Voltage (Note 4) VBE(SAT) Base-Emitter Voltage (Note 4) VBE(ON) - - -700 -900 - - mV -600 - - - -750 -820 mV - - - - -15 -4.0 - 4.5 nA µA MHz pF - 10 dB Collector-Cutoff Current (Note 4) ICBO Gain Bandwidth Product Output Capacitance fT COB - - 100 - Noise Figure NF - Notes: Unit V V V - mV Test Condition IC = 10A, IB = 0 IC = 10mA, IB = 0 IE = 1A, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = 150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz IC = -0.2mA, VCE = -5.0Vdc, RS = 2.0K, f = 1.0KHz, BW = 200Hz 4. Short duration pulse test used to minimize self-heating effect. DMB54D0UDW DMB54D0UDW Document number: DS31677 DS31677 Rev. 3 - 2 2 of 6 www.diodes.com March 2009 © Diodes Incorporated DMB54D0UDW DMB54D0UDW MOSFET 0.8 0.5 VGS = 10V 0.7 VDS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.5 VGS = 3.0V 0.4 VGS = 2.5V 0.3 0.2 TA = 85°C TA = 25°C TA = -55°C 0.3 T A = 150°C TA = 125°C 0.2 0.1 0.1 VGS = 1.5V VGS = 1.0V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 0 5 4 10 VGS = 2.5V VGS = 4.0V 1 0.001 0.01 0.1 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1 2 3 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 2.0 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C 1 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 35 1.8 30 VGS = 4V ID = 100mA 1.6 1.4 C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) NEW PRODUCT 0.4 VGS = 4.5V 0.6 VGS = 2.5V ID = 80mA 1.2 1.0 0.8 25 Ciss 20 f = 1MHz VGS = 0V 15 10 5 0.6 0.4 -50 Document number: DS31677 DS31677 Rev. 3 - 2 Crss 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMB54D0UDW DMB54D0UDW Coss 3 of 6 www.diodes.com 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 40 March 2009 © Diodes Incorporated DMB54D0UDW DMB54D0UDW MOSFET (continued) 1 0.9 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 ID = 250µA 0.8 0.7 0.1 TA = 150°C 0.01 TA = 125°C TA = 85°C 0.001 TA = 25°C T A = -55°C 0.6 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.0001 0.1 0.3 0.5 0.7 0.9 1.1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 300 PD, POWER DISSIPATION (mW) NEW PRODUCT 1.1 250 200 150 100 50 RJA = 500°C/W 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 9 Derating Curve - Total Package Power Dissipation DMB54D0UDW DMB54D0UDW Document number: DS31677 DS31677 Rev. 3 - 2 4 of 6 www.diodes.com March 2009 © Diodes Incorporated DMB54D0UDW DMB54D0UDW PNP Transistor 0.5 TA = 150°C VCE = 5V IC IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) NEW PRODUCT hFE, DC CURRENT GAIN 1,000 100 T A = 25°C TA = -50°C 10 0.4 0.3 TA = 25°C 0.2 T A = 150°C 0.1 T A = -50°C 0 0.1 1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical DC Current Gain vs. Collector Current 1,000 10 100 1 IC, COLLECTOR CURRENT (mA) Fig. 11 Collector-Emitter Saturation Voltage vs. Collector Current 1,000 ft, GAIN-BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 10 100 IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Gain-Bandwidth Product vs. Collector Current 1 Ordering Information (Note 5) Part Number DMB54D0UDW-7 DMB54D0UDW-7 Notes: Case SOT-363 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. MB2 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DMB54D0UDW DMB54D0UDW Document number: DS31677 DS31677 Rev. 3 - 2 Mar 3 YM Marking Information 2010 X Apr 4 MB2 = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2011 Y May 5 Jun 6 5 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D March 2009 © Diodes Incorporated DMB54D0UDW DMB54D0UDW Package Outline Dimensions A NEW PRODUCT B C H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° All Dimensions in mm Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMB54D0UDW DMB54D0UDW Document number: DS31677 DS31677 Rev. 3 - 2 6 of 6 www.diodes.com March 2009 © Diodes Incorporated