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XPQR8308QB
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL |
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TRS8E65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L |
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TBAW56
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Toshiba Electronic Devices & Storage Corporation
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Switching Diode, 80 V, 0.215 A, SOT23 |
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XPQ1R00AQB
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL |
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TRS10E65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L |
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XPH13016MC
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Toshiba Electronic Devices & Storage Corporation
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P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) |
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