NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: InGaAlP-High Brightness-Lumineszenzdiode (630 nm, High Optical Power) InGaAlP High Brightness Light Emitting Diode (630 nm, High Optical Power) F 1998A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature · Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung · Chipgröße 300 x 300 um2 · Wellenlänge (typ.): 630 nm · Technologie:InGaAIP · Typ. Lichtfluß , structuring and current distribution · Chip size 300 x 300 um2 · Wavelength (typ.): 630 nm · Technology ... | Original |
6 pages, |
DIODE 630 Q-67220-C1446 Q-67220-C1446 abstract |
|
|||
| Abstract: InGaAlP-High Brightness-Lumineszenzdiode (630 nm, Low Current) InGaAlP High Brightness Light Emitting Diode (630 nm, Low Current) F 0349C 0349C Vorläufige Daten / Preliminary Data Wesentliche Merkmale · Chipgröße 170 x 170 um · Wellenlänge: 630 nm · Technologie:InGaAIP Feature · Chip size 170 x 170 um2 · Wavelength: 630 nm · Technology: InGaAIP 2 Anwendungen Applications · Niedrigstromanwendungen · optischer Indikator · Hinterleuchtung (LCD, Handy, Schalter, Tasten, Displays ... | Original |
7 pages, |
GCOY6101 0349C Q65110A0962 0349C abstract |
|
|||
| Abstract: InGaAlP-High Brightness-Lumineszenzdiode (630 nm, High Optical Power) InGaAlP High Brightness Light Emitting Diode (630 nm, High Optical Power) F 1998A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature · Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung · Chipgröße 300 x 300 um2 · Wellenlänge (typ.): 630 nm · Technologie:InGaAIP · Typ. Lichtfluß , structuring and current distribution · Chip size 300 x 300 um2 · Wavelength (typ.): 630 nm · Technology ... | Original |
6 pages, |
Q-67220-C1446 Q-67220-C1446 abstract |
|
|||
| Abstract: 2012 5/9 NXP Semiconductors BAS86 BAS86 Schottky barrier single diode 6.30 4.90 2.70 1.90 , BAS86 BAS86 25 July 2012 Schottky barrier single diode Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress , NXP Semiconductors BAS86 BAS86 Schottky barrier single diode 2. Pinning information Table 2. Pin 1 2 , sheet 25 July 2012 2/9 NXP Semiconductors BAS86 BAS86 Schottky barrier single diode 6. ... | Original |
9 pages, |
BAS86 BAS86 abstract |
|
|||
| Abstract: reference voltage. Diode D6 and low cost ceramic capacitor C5 provide rectification and filtering of the , output short-circuit condition. 4.3 Design of External Bias for LinkZero-LP Diode D5 and R2 form the , voltage (BVDSS). 4.5 Output Rectification Output rectification is provided by diode D7 and filtering is , Output Winding Diode Forward Voltage Drop Ripple to Peak Current Ratio (0.9 , CFB 680.00 CBP 220.00 Recommended Bias 1N4003 1N4003 Diode DC INPUT VOLTAGE PARAMETERS VMIN 103 ... | Original |
30 pages, |
1206 cms diode kp 1832 EN550022 melf Schottky glass EF16 TRANSFORMER ferrite pc44 SS15-TP Star Sea Electronics TAQ2G3R3MK0811MLL3 1N4007 melf manufacturer tdk ferrite pc44 EKZE160ELL331MHB5D LNK574DG LNK574DG LNK574DG abstract |
|
|||
| Abstract: Diode Alpha-Numeric G MAN3610 MAN3610 .300 in. Orange 630 nm 510 Med 2.5 V 10 mA Common Anode; RHDP C,N MAN3620 MAN3620 .300 in. Orange 630 nm 510 jucd 2.5 V 10 mA Common Anode; LHDP D,N MAN3630 MAN3630 .294 in. Orange 630 nm 510 ßcd 2.5 V 10 mA Common Anode; RHDP Overflow (±1) E,N MAN3640 MAN3640 .300 in. Orange 630 nm 510 jucd 2.5 , Med 3.5 V 10 mA Common Cathode; RHDP F,N MAN4610 MAN4610 .400 in. Orange 630 nm 510 Med 2.5 V 10 mA Common Anode; RHDP H,N MAN4630 MAN4630 .400 in. Orange 630 nm 510 jucd 2.5 V 10 mA Common Anode; RHDP Overflow (±1) I ... | OCR Scan |
3 pages, |
MAN1001A MAN101A MAN3610 MAN3620 MAN3630 MAN3640 MAN51 MAN52 MAN53 MAN54 MAN6630 MAN71 man72 7-segment 7 segment display man72 MAN72 common anode datasheet abstract |
|
|||
| Abstract: Diode Alpha-Numeric G MAN3610 MAN3610 .300 in. Orange 630 nm 510 Med 2.5 V 10 mA Common Anode; RHDP C,N MAN3620 MAN3620 .300 in. Orange 630 nm 510 jucd 2.5 V 10 mA Common Anode; LHDP D,N MAN3630 MAN3630 .294 in. Orange 630 nm 510 ßcd 2.5 V 10 mA Common Anode; RHDP Overflow (±1) E,N MAN3640 MAN3640 .300 in. Orange 630 nm 510 jucd 2.5 , Med 3.5 V 10 mA Common Cathode; RHDP F,N MAN4610 MAN4610 .400 in. Orange 630 nm 510 Med 2.5 V 10 mA Common Anode; RHDP H,N MAN4630 MAN4630 .400 in. Orange 630 nm 510 jucd 2.5 V 10 mA Common Anode; RHDP Overflow (±1) I ... | OCR Scan |
1 pages, |
MAN3620 MAN3610 MAN101A MAN1001A MAN51 MAN53 MAN54 MAN6710 man72 segment display man72 monsanto MAN52 MAN71 MAN2a MAN72 common anode 7-segment display man72 datasheet abstract |
|
|||
| Abstract: ISCFdÈiKûéiKûé text/html About keyword search: News Contact Employment Site Home part number search: JANTX1N3319RB JANTX1N3319RB (#58086) Zener Voltage Regulator Diode Division Scottsdale , Maximum Electrical Rating Power Dissipation Tolerance Electrical Rating Zener Voltage (IZT =630 mA, T A=25 ºC) Dynamic Impedance (IZT =630 mA, T A=25 ºC) Reverse Leakage Current (V R=15.2 V) Maximum Regulator , | S-Band Radar | SCR | Thyristors | Varacter Diode | WLAN Power Amplifier | Zener Diode Copyright © 2007 ... | Original |
1 pages, |
ZENER A25 diode A25 datasheet abstract |
|
|||
| Abstract: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 635nm-5mW - Red Laser Diode Back to Laser Diodes VISIBLE LASER DIODE DATA SHEET ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C) TECHNICAL DATA for LASER DIODE Index Guided MQW Structure Wavelength: 635nm , diode light output Pin Out Diagram - Style A 635nm Optical power output 5mW CW Package Type 5.6mm Built-in photo diode for monitoring laser output Items Optical output power Laser diode ... | Original |
1 pages, |
lens laser diode laser diode 635nm DIODE 630 D635 635nm laser modules 635nm red laser diode 635nm datasheet abstract |
|
|||
| Abstract: 635nm 10mW laser diode NVG, Inc. VISIBLE LASER DIODES Technical Data MODEL # N635-10 N635-10 VISIBLE LASER DIODE ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C) TECHNICAL DATA Index Guided MQW Structure , 9mm Built-in photo diode for monitoring laser output Items Optical output power Laser diode reverse voltage Photo diode reverse voltage Operating temperature Storage temperature Symbols Po , ) Monitor current Astigmatism Symbols Po Ith Iop Vop 8D F z 0 Im As Min. 25 40 2.0 630 ... | Original |
1 pages, |
N635-10 laser diode 635nm 635nm laser diode 635nm 1.0mW photo diode 635nm N635-10 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| SCR / Diode Modules Home >> Products & Solutions >> Product Range >> SCR / Diode Modules SCR / SCR SCR / DIODE DIODE / SCR TZ630N www.datasheetarchive.com/files/eupec/de/2_products/2_1_productrange/2_1_3_scrdiodemod/gb_2_1_1_003_2_3600.htm |
eupec | 21/04/2004 | 17.76 Kb | HTM | gb_2_1_1_003_2_3600.htm |
| SCR / Diode Modules Home >> Products & Solutions >> Product Range >> SCR / Diode Modules SCR / SCR SCR / DIODE DIODE / SCR TZ630N www.datasheetarchive.com/files/eupec/gb/2_products/2_1_productrange/2_1_3_scrdiodemod/gb_2_1_1_003_2_3600.htm |
eupec | 20/04/2004 | 17.49 Kb | HTM | gb_2_1_1_003_2_3600.htm |
| SCR / Diode Modules Home >> Products & Solutions >> Product Range >> SCR / Diode Modules SCR / SCR SCR / DIODE DIODE / SCR TZ630N www.datasheetarchive.com/files/eupec/gb/2_products/2_1_productrange/2_1_3_scrdiodemod/gb_2_1_1_003_3_3600.htm |
eupec | 20/04/2004 | 17.49 Kb | HTM | gb_2_1_1_003_3_3600.htm |
| SCR / Diode Modules Home >> Products & Solutions >> Product Range >> SCR / Diode Modules SCR / SCR SCR / DIODE DIODE / SCR TZ630N www.datasheetarchive.com/files/eupec/gb/2_products/2_1_productrange/2_1_3_scrdiodemod/gb_2_1_1_003_1_3600.htm |
eupec | 20/04/2004 | 17.49 Kb | HTM | gb_2_1_1_003_1_3600.htm |
| Search Criteria: PartType = Zener Voltage Regulator Diode, Izt = 630 mAmps Part No Type Package Power (Watts) Vz Amps) JANTXV 1N2818B 1N2818B 1N2818B 1N2818B SD ZEN TO-3 STD 50 20 630 1N3319A 1N3319A 1N3319A 1N3319A SD ZEN DO-5 STD 50 20 630 1N3319B 1N3319B 1N3319B 1N3319B SD ZEN DO-5 STD 50 20 630 JANTX 1N3319B 1N3319B 1N3319B 1N3319B SD ZEN DO-5 STD 50 20 630 JANTX 1N2818B 1N2818B 1N2818B 1N2818B SD ZEN TO-3 STD 50 20 630 JANTXV 1N3319B 1N3319B 1N3319B 1N3319B SD ZEN DO-5 STD 50 20 630 1N2818A 1N2818A 1N2818A 1N2818A SD ZEN TO-3 STD 50 20 630 1N2818B 1N2818B 1N2818B 1N2818B SD ZEN TO-3 STD 50 20 630 JAN 1N2818B 1N2818B 1N2818B 1N2818B www.datasheetarchive.com/files/microsemi/products/zen/29_630.htm |
Microsemi | 04/01/1999 | 7.34 Kb | HTM | 29_630.htm |
| Search Criteria: PartType = Zener Voltage Regulator Diode, Zzt Amps) JANTXV 1N2818B 1N2818B 1N2818B 1N2818B SD ZEN TO-3 STD 50 20 630 1N3319A 1N3319A 1N3319A 1N3319A SD ZEN DO-5 STD 50 20 630 1N3319B 1N3319B 1N3319B 1N3319B SD ZEN DO-5 STD 50 20 630 JANTX 1N3319B 1N3319B 1N3319B 1N3319B SD ZEN DO-5 STD 50 20 630 JANTX 1N2818B 1N2818B 1N2818B 1N2818B SD ZEN TO-3 STD 50 20 630 JANTXV 1N3319B 1N3319B 1N3319B 1N3319B SD ZEN DO-5 STD 50 20 630 1N2818A 1N2818A 1N2818A 1N2818A SD ZEN TO-3 STD 50 20 630 1N2818B 1N2818B 1N2818B 1N2818B SD ZEN TO-3 STD 50 20 630 JAN 1N2818B 1N2818B 1N2818B 1N2818B SD ZEN TO-3 STD 50 20 630 JAN 1N3319B 1N3319B 1N3319B 1N3319B SD ZEN DO-5 STD 50 20 630 www.datasheetarchive.com/files/microsemi/products/zen/30_2.4.htm |
Microsemi | 04/01/1999 | 7.34 Kb | HTM | 30_2.4.htm |
| Search Criteria: PartType = Zener Voltage Regulator Diode, IZM = 2350 mAmps Part No Type Package Power (Watts) Vz (Volts) Vz2 (Volts) Izt (mAmps) Izt2 (uAmps) JANTXV 1N2818B 1N2818B 1N2818B 1N2818B SD ZEN TO-3 STD 50 20 630 JANTX 1N2818B 1N2818B 1N2818B 1N2818B SD ZEN TO-3 STD 50 20 630 1N2818A 1N2818A 1N2818A 1N2818A SD ZEN TO-3 STD 50 20 630 1N2818B 1N2818B 1N2818B 1N2818B SD ZEN TO-3 STD 50 20 630 JAN 1N2818B 1N2818B 1N2818B 1N2818B SD ZEN TO-3 STD 50 20 630 www.datasheetarchive.com/files/microsemi/products/zen/195_2350.htm |
Microsemi | 04/01/1999 | 4.43 Kb | HTM | 195_2350.htm |
| .i-t.com * #* # MODPEX model for diode mbrd630ctt4 # Model generated on November 25, 2003 electrical p,n { # BODY_BEGIN # Model format: Saber spd.model ddmbrd630ctt4=( is=7.79285e-06,rs=0.0619906,n=1.29111,eg=0.669684, xti element component template mbrd630ctt4 p n #* # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved =model=ddmbrd630ctt4 } www.datasheetarchive.com/files/on_semiconductor/simulation-models/mbrd630ctt4.sin |
On Semiconductor | 30/03/2009 | 0.8 Kb | SIN | mbrd630ctt4.sin |
| replacement for PIN diodes. The SA630 is available in an 8-pin dual in-line plastic package and an 8 SA630 Product information page SA630 General info The SA630 is a wideband RF switch fabricated in BiCMOS technol-ogy and incorporating on applied to the enable channel 1 pin (ENCH1). The extremely low current consumption makes the SA630 Publication releasedate Datsheet status Page count File size SA630 Single www.datasheetarchive.com/files/philips/pip/sa630-v1.html |
Philips | 06/06/2005 | 3.28 Kb | HTML | sa630-v1.html |
| makes the SA630 ideal for portable applications. The excellent isolation and low loss makes this a suitable replacement for PIN diodes. The SA630 is available in an 8-pin dual in-line plastic package SA630 Product information page SA630; Single pole double throw (SPDT) switch General info The SA630 is a wideband RF switch fabricated in BiCMOS technol releasedate Datsheet status Page count File size SA630 Single pole double www.datasheetarchive.com/files/philips/pip/sa630.html |
Philips | 23/04/2003 | 3.75 Kb | HTML | sa630.html |