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DIODE 630

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: InGaAlP-High Brightness-Lumineszenzdiode (630 nm, High Optical Power) InGaAlP High Brightness Light Emitting Diode (630 nm, High Optical Power) F 1998A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature · Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung · Chipgröße 300 x 300 um2 · Wellenlänge (typ.): 630 nm · Technologie:InGaAIP · Typ. Lichtfluß , structuring and current distribution · Chip size 300 x 300 um2 · Wavelength (typ.): 630 nm · Technology OSRAM
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C1446 Q-67220-C1446
Abstract: InGaAlP-High Brightness-Lumineszenzdiode (630 nm, High Optical Power) InGaAlP High Brightness Light Emitting Diode (630 nm, High Optical Power) F 1998A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature · Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung · Chipgröße 300 x 300 um2 · Wellenlänge (typ.): 630 nm · Technologie:InGaAIP · Typ. Lichtfluß , structuring and current distribution · Chip size 300 x 300 um2 · Wavelength (typ.): 630 nm · Technology OSRAM
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osram topled
Abstract: InGaAlP-High Brightness-Lumineszenzdiode (630 nm, Low Current) InGaAlP High Brightness Light Emitting Diode (630 nm, Low Current) F 0349C Vorläufige Daten / Preliminary Data Wesentliche Merkmale · Chipgröße 170 x 170 um · Wellenlänge: 630 nm · Technologie:InGaAIP Feature · Chip size 170 x 170 um2 · Wavelength: 630 nm · Technology: InGaAIP 2 Anwendungen Applications · Niedrigstromanwendungen · optischer Indikator · Hinterleuchtung (LCD, Handy, Schalter, Tasten, Displays OSRAM
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GCOY6101 Q65110A0962
Abstract: InGaAlP-High Brightness-Lumineszenzdiode (630 nm, Low Current) InGaAlP High Brightness Light Emitting Diode (630 nm, Low Current) F 0349C Vorläufige Daten / Preliminary D ata Wesentliche Merkmale · Chipgröße 170 x 170 u m2 · Wellenlänge: 630 nm · Technologie:InGaAIP Anwendungen · Niedrigstromanwendungen · optischer Indikator · Hinterleuchtung (LCD, Handy, Schalter, Tasten, Displays, Werbebeleuchtung , Bestellnummer Ordering Code on request Feature · Chip size 170 x 170 um 2 · Wavelength: 630 nm · Technology OSRAM
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osram mini top LED rot
Abstract: 2012 5/9 NXP Semiconductors BAS86 Schottky barrier single diode 6.30 4.90 2.70 1.90 , BAS86 25 July 2012 Schottky barrier single diode Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress , NXP Semiconductors BAS86 Schottky barrier single diode 2. Pinning information Table 2. Pin 1 2 , sheet 25 July 2012 2/9 NXP Semiconductors BAS86 Schottky barrier single diode 6 NXP Semiconductors
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SOD-80C
Abstract: . Diode D6 and low cost ceramic capacitor C5 provide rectification and filtering of the primary feedback , short-circuit condition. 4.3 Design of External Bias for LinkZero-LP Diode D5 and R2 form the external bias , Output Rectification Output rectification is provided by diode D7 and filtering is provided by capacitor , Output Winding Diode Forward Voltage Drop Ripple to Peak Current Ratio (0.9 , CFB 680.00 CBP 220.00 Recommended Bias 1N4003 Diode DC INPUT VOLTAGE PARAMETERS VMIN 103 Power Integrations
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LNK574DG DER-258 EN550022 EF16HP09-QO LNK574 vishay 1N4007 DO-214AC CISPR-22
Abstract: `Diode' Operates From Single 3.0 - 3.6V Supply - 5V supply for linear fan driver and reset , . . . . . . . . . . . . . . . . . . Diode Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.12.1 Diode Faults . . , 6.28 6.29 6.30 6.31 6.32 Register Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Diode Standard MicroSystems
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emc2112 smsc emc2112 2N3904, transistor EMC2112-BP-TR power diod EMC2112
Abstract: Diode Alpha-Numeric G MAN3610 .300 in. Orange 630 nm 510 Med 2.5 V 10 mA Common Anode; RHDP C,N MAN3620 .300 in. Orange 630 nm 510 jucd 2.5 V 10 mA Common Anode; LHDP D,N MAN3630 .294 in. Orange 630 nm 510 Ãcd 2.5 V 10 mA Common Anode; RHDP Overflow (±1) E,N MAN3640 .300 in. Orange 630 nm 510 jucd , Med 3.5 V 10 mA Common Cathode; RHDP F,N MAN4610 .400 in. Orange 630 nm 510 Med 2.5 V 10 mA Common Anode; RHDP H,N MAN4630 .400 in. Orange 630 nm 510 jucd 2.5 V 10 mA Common Anode; RHDP Overflow (±1) I -
OCR Scan
MAN101A MAN52 MAN53 C1237 MAN2a MAN72 man2a monsanto 7-segment display man72 4 digit led display 14pin MAN1001A MAN51 C1235
Abstract: Key Parameters VDRM = 4500 ITGQM = 630 ITSM = 5 VT0 = 1.5 rT = 2.38 VDClink = 2800 Features V A , 0.04 106 A s Half sine wave, TC = 85 °C tp = tp = tp = tp = IT = IT = 10 ms 1 ms 10 ms 1 ms 630 A , < f 300 A/us IT 2 us 1 us 10 us 0.25 J VD IT RS = = = = 630 A 2700 V 630 A 1.20 2.0 uF VD = Tj = = , turn-off current Turn-off delay time Fall time 630 A 6.0 us 1.0 us 10 us 2.8 J VDM VD = VD Tj = = VDRM , . No. 5SYA1223-03 Feb. 99 ABB Semiconductors AG 5SHX 08F4502 Diode Data On-state IFAVM ABB Semiconductors
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hp 2800 diode CH-5600
Abstract: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V m V Reverse , m 3 2 3 2 Half sine wave, TC = 85 °C tp tp tp tp IT IT = = = = = = 10 ms 1 ms 10 ms 1 ms 630 A , Hz 630 A 2700 V 630 A 1.2 2 uF Tj Tj Li = = = 115 °C V 115 °C 250 A/us 10.7 uH 1 uH VD = di/dt = LCL , turn-off current Turn-off delay time Fall time Min. off-time Turn-off energy per pulse 630 A 6 us 1 us , 08F4502 Diode Data On-state (see Fig. 4) IFAVM IFRMS IFSM I2t VF VF0 rF Max. average on-state current ABB Group
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IGCT abb IGCT thyristor ABB 5SYA1223-04 20VDC
Abstract: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V m V Reverse , sine wave, TC = 85 °C tp tp tp tp IT IT = = = = = = 10 ms 1 ms 10 ms 1 ms 630 A 100 - 1000 A Tj = 115 , energy per pulse 300 A/us 3 us 1 us 10 us 0.25 J f IT VD IT RS = = = = = 500 Hz 630 A 2700 V 630 A 1.2 , time Fall time Min. off-time Turn-off energy per pulse 630 A 6 us 1 us 10 us 2.9 J VDM VDRM VD VD , notice. Doc. No. 5SYA1223-04 Nov. 01 page 2 of 9 5SHX 08F4502 Diode Data On-state (see Fig. 4 ABB Group
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IGCT
Abstract: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V m V Reverse , Half sine wave, TC = 85 °C tp tp tp tp IT IT = = = = = = 10 ms 1 ms 10 ms 1 ms 630 A 100 - 1000 A Tj = , energy per pulse 300 A/us 3 us 1 us 10 us 0.25 J f IT VD IT RS = = = = = 500 Hz 630 A 2700 V 630 A 1.2 , Turn-off delay time Fall time Min. off-time Turn-off energy per pulse 630 A 6.0 us 1.0 us 10 us 2.9 J VD , change specifications without notice. Doc. No. 5SYA1223-04 Sep. 01 page 2 of 9 5SHX 08F4502 Diode ABB Group
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Abstract: VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 630 5×103 1.8 2 2800 V , 3 us 7 us 1 us 0.25 J max Unit 800 A 630 For higher diT/dt , Conditions VT IT = 630 A, Tj = 115 °C Threshold voltage V(T0) Slope resistance rT Turn-on , 1 Symbol Conditions diT/dtcr f = 500 Hz, Tj = 115 °C, IT = 630 A, VD = 2700 V min min Rise time Symbol Conditions VD = 2700 V, Tj = 115 °C tdon IT = 630 A, di/dt = VD / Li tdon SF ABB Switzerland
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IGCT thyristor current max Pressure transmitter TBD MTA-156 A115 HFBR-2528 HFBR-1528 08F4510 5SYA1223-06
Abstract: 580 580 580 580 580 580 580 630 630 630 630 630 630 630 630 630 630 630 630 dV /dt (V /us) 650 650 , diode blocks oscillations from occurring and excess charge on the capacitor is discharged through the , , the snubber diode is forward biased and the snubber is activated. The energy trapped in the stray , bus voltage have a discharge path through the forward biased free-wheel diode, the IGBT, and the , Module Diode Repetitive Ic/Vce Characteristics Ipk(A) Surge 20 kHz S=Single, D=Dual Vrrm/If/trr(us) Tc = Cornell Dubilier
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capacitor 1700 uF 400 VDC IGBT Snubber 329 SCD15 UL94V0 SCD474K601A3Z25 SCC105K601H7-24 SCC155K601H7-24 SCC205K601H5-24 SCC205K601H5-28
Abstract: : Diode: BC477QF Quad Transistor Quad Ceramic Flat Pack PNP VDSS IC(cont) ID(cont) HFE(min) HFE(max) @ VCE , 32V 32V 32V IC(cont) 0.2A 0.2A 0.2A 0.2A HFE(min) 120 120 120 120 HFE(max) 630 630 630 630 @ VCE/IC 5 , Package Polarity FET: Diode: BCY58QF Quad Transistor Quad Ceramic Flat Pack NPN VDSS IC(cont) ID(cont) HFE(min) HFE(max) @ VCE/IC FT RDSS Voltage Current 32V 200mA 120 630 5/2m 125MHz Searched through , Package Polarity FET: Diode: BCY70QF Quad Transistor Quad Ceramic Flat Pac PNP VDSS IC(cont) ID(cont) HFE Semelab
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pnp hfe 120 036w LCC1 transistor 200ma pnp BC477 BC477A BC477B BC477CSM BC477CSM-JQR-B BC477DCSM
Abstract: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA , rT tp = 2 tp = IT = 630 A IT = 100 - 1000 A Slope resistance , , on-time Eon Turn-on energy per pulse f = 500 Hz Tj IT = 630 A VD = 3 us VD = 2700 V 1 us IT = 630 A 10 us di/dtcrit RS = 1.2 300 A/us , 630 A tdoff Turn-off delay time tf Fall time toff (min) Min. off-time ABB Group
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gct thyristor IGCT thyristor
Abstract: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V m V Reverse , m Half sine wave, TC = 85 °C tp tp tp tp IT IT = = = = = = 10 ms 1 ms 10 ms 1 ms 630 A 100 - 1000 , energy per pulse 300 A/us 3 us 1 us 10 us 0.25 J f VD IT RS CCL = = = = = 500 Hz 2700 V 630 A 1.20 , Fall time Min. off-time Turn-off energy per pulse 630 A 6.0 us 1.0 us 10 us 2.9 J VDM VD VD Tj ITGQ , notice. Doc. No. 5SYA 1223-04 Aug. 2000 page 2 of 10 5SHX 08F4502 Diode Data On-state (see Fig ABB Group
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5SHX 08F4502 abb cs 400 high power igct abb
Abstract: available Plastic or steel mounting bracket available Resistor or diode parallel to coil available ISO/TS , Mechanical Electrical 5 ms at nominal coil voltage Resistive load: Max. switched power: 630 W (SPST) 630 W (N.O.) 473 W (N.C.) Dielectric Strength 500 Vrms coil to contact (at sea level for 1 min , ORDERING DATA AZ9731-1C-12DC2 R1 Blank - Standard no diode, no resistor R1 - 180 Ohm ½ w resistor in , parallel with 24 V coil D2 - 1N4005 diode in parallel with coil, cathode on #86 terminal C1 - Plastic -
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AZ9731 ISO14001 ST9721-U1 ST9721-U2 ST9721-U3
Abstract: available Plastic or steel mounting bracket available Resistor or diode parallel to coil available ISO/TS , Mechanical Electrical 5 ms at nominal coil voltage Resistive load: Max. switched power: 630 W (SPST) 630 W (N.O.) 473 W (N.C.) Dielectric Strength 500 Vrms coil to contact (at sea level for 1 min , AZ9731-1C-12DC2 R1 Blank - Standard no diode, no resistor R1 - 180 Ohm ½ w resistor in parallel with 6 , V coil D2 - 1N4005 diode in parallel with coil, cathode on #86 terminal C1 - Plastic dust cover American Zettler
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Abstract: ) Epoxy sealed versions available Plastic or steel mounting bracket available Resistor or diode parallel , power: 630 W (SPST) 630 W (N.O.) 473 W (N.C.) Life Expectancy Mechanical Electrical Minimum , ORDERING DATA AZ9731-1C-12DC2 R1 Blank - Standard no diode, no resistor R1 - 180 Ohm ½ w resistor in , with 24 V coil D2 - 1N4005 diode in parallel with coil, cathode on #86 terminal C1 - Plastic dust , ] 0.354 0.748 [9.00] [19.00] 1.043MAX [26.50] .453MAX [11.50] .031 [0.80] .248 [6.30 -
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ST9721 J2544 965MAX 224MAX 228MAX 5/23/07W
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