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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

DIODE 630

Catalog Datasheet MFG & Type PDF Document Tags

DIODE 630

Abstract: C1446 InGaAlP-High Brightness-Lumineszenzdiode (630 nm, High Optical Power) InGaAlP High Brightness Light Emitting Diode (630 nm, High Optical Power) F 1998A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature · Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung · Chipgröße 300 x 300 µm2 · Wellenlänge (typ.): 630 nm · Technologie:InGaAIP · Typ. Lichtfluß , structuring and current distribution · Chip size 300 x 300 µm2 · Wavelength (typ.): 630 nm · Technology
OSRAM
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C1446

Abstract: osram topled InGaAlP-High Brightness-Lumineszenzdiode (630 nm, High Optical Power) InGaAlP High Brightness Light Emitting Diode (630 nm, High Optical Power) F 1998A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature · Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung · Chipgröße 300 x 300 µm2 · Wellenlänge (typ.): 630 nm · Technologie:InGaAIP · Typ. Lichtfluß , structuring and current distribution · Chip size 300 x 300 µm2 · Wavelength (typ.): 630 nm · Technology
OSRAM
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DIODE 630

Abstract: GCOY6101 InGaAlP-High Brightness-Lumineszenzdiode (630 nm, Low Current) InGaAlP High Brightness Light Emitting Diode (630 nm, Low Current) F 0349C Vorläufige Daten / Preliminary Data Wesentliche Merkmale · Chipgröße 170 x 170 µm · Wellenlänge: 630 nm · Technologie:InGaAIP Feature · Chip size 170 x 170 µm2 · Wavelength: 630 nm · Technology: InGaAIP 2 Anwendungen Applications · Niedrigstromanwendungen · optischer Indikator · Hinterleuchtung (LCD, Handy, Schalter, Tasten, Displays
OSRAM
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DIODE 630 GCOY6101 Q65110A0962

osram mini top LED rot

Abstract: InGaAlP-High Brightness-Lumineszenzdiode (630 nm, Low Current) InGaAlP High Brightness Light Emitting Diode (630 nm, Low Current) F 0349C Vorläufige Daten / Preliminary D ata Wesentliche Merkmale · Chipgröße 170 x 170 µ m2 · Wellenlänge: 630 nm · Technologie:InGaAIP Anwendungen · Niedrigstromanwendungen · optischer Indikator · Hinterleuchtung (LCD, Handy, Schalter, Tasten, Displays, Werbebeleuchtung , Bestellnummer Ordering Code on request Feature · Chip size 170 x 170 µm 2 · Wavelength: 630 nm · Technology
OSRAM
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osram mini top LED rot

SOD-80C

Abstract: 2012 5/9 NXP Semiconductors BAS86 Schottky barrier single diode 6.30 4.90 2.70 1.90 , BAS86 25 July 2012 Schottky barrier single diode Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress , NXP Semiconductors BAS86 Schottky barrier single diode 2. Pinning information Table 2. Pin 1 2 , sheet 25 July 2012 2/9 NXP Semiconductors BAS86 Schottky barrier single diode 6
NXP Semiconductors
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SOD-80C

EF16HP09-QO

Abstract: LNK574 . Diode D6 and low cost ceramic capacitor C5 provide rectification and filtering of the primary feedback , short-circuit condition. 4.3 Design of External Bias for LinkZero-LP Diode D5 and R2 form the external bias , Output Rectification Output rectification is provided by diode D7 and filtering is provided by capacitor , Output Winding Diode Forward Voltage Drop Ripple to Peak Current Ratio (0.9 , CFB 680.00 CBP 220.00 Recommended Bias 1N4003 Diode DC INPUT VOLTAGE PARAMETERS VMIN 103
Power Integrations
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LNK574DG DER-258 EN550022 EF16HP09-QO LNK574 TDK Ferrite Core PC44 CISPR-22

emc2112

Abstract: smsc emc2112 `Diode' Operates From Single 3.0 - 3.6V Supply - 5V supply for linear fan driver and reset , . . . . . . . . . . . . . . . . . . Diode Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.12.1 Diode Faults . . , 6.28 6.29 6.30 6.31 6.32 Register Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Diode
Standard MicroSystems
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emc2112 smsc emc2112 EMC2112-BP-TR 2N3904, transistor power diod EMC2112

MAN2a

Abstract: C1237 Diode Alpha-Numeric G MAN3610 .300 in. Orange 630 nm 510 Med 2.5 V 10 mA Common Anode; RHDP C,N MAN3620 .300 in. Orange 630 nm 510 jucd 2.5 V 10 mA Common Anode; LHDP D,N MAN3630 .294 in. Orange 630 nm 510 Ãcd 2.5 V 10 mA Common Anode; RHDP Overflow (±1) E,N MAN3640 .300 in. Orange 630 nm 510 jucd , Med 3.5 V 10 mA Common Cathode; RHDP F,N MAN4610 .400 in. Orange 630 nm 510 Med 2.5 V 10 mA Common Anode; RHDP H,N MAN4630 .400 in. Orange 630 nm 510 jucd 2.5 V 10 mA Common Anode; RHDP Overflow (±1) I
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OCR Scan
MAN1001A MAN101A C1237 MAN2a MAN72 man2a monsanto 4 digit led display 14pin 7-segment display man72 MAN51 MAN52 MAN53 C1235

hp 2800 diode

Abstract: Key Parameters VDRM = 4500 ITGQM = 630 ITSM = 5 VT0 = 1.5 rT = 2.38 VDClink = 2800 Features V A , 0.04 106 A s Half sine wave, TC = 85 °C tp = tp = tp = tp = IT = IT = 10 ms 1 ms 10 ms 1 ms 630 A , < f 300 A/µs IT 2 µs 1 µs 10 µs 0.25 J VD IT RS = = = = 630 A 2700 V 630 A 1.20 2.0 µF VD = Tj = = , turn-off current Turn-off delay time Fall time 630 A 6.0 µs 1.0 µs 10 µs 2.8 J VDM VD = VD Tj = = VDRM , . No. 5SYA1223-03 Feb. 99 ABB Semiconductors AG 5SHX 08F4502 Diode Data On-state IFAVM
ABB Semiconductors
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hp 2800 diode CH-5600

IGCT abb

Abstract: IGCT thyristor ABB VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V m V Reverse , m 3 2 3 2 Half sine wave, TC = 85 °C tp tp tp tp IT IT = = = = = = 10 ms 1 ms 10 ms 1 ms 630 A , Hz 630 A 2700 V 630 A 1.2 2 µF Tj Tj Li = = = 115 °C V 115 °C 250 A/µs 10.7 µH 1 µH VD = di/dt = LCL , turn-off current Turn-off delay time Fall time Min. off-time Turn-off energy per pulse 630 A 6 µs 1 µs , 08F4502 Diode Data On-state (see Fig. 4) IFAVM IFRMS IFSM I2t VF VF0 rF Max. average on-state current
ABB Group
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IGCT abb IGCT thyristor ABB 5SYA1223-04 20VDC

IGCT

Abstract: IGCT thyristor ABB VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA V m V Reverse , sine wave, TC = 85 °C tp tp tp tp IT IT = = = = = = 10 ms 1 ms 10 ms 1 ms 630 A 100 - 1000 A Tj = 115 , energy per pulse 300 A/µs 3 µs 1 µs 10 µs 0.25 J f IT VD IT RS = = = = = 500 Hz 630 A 2700 V 630 A 1.2 , time Fall time Min. off-time Turn-off energy per pulse 630 A 6 µs 1 µs 10 µs 2.9 J VDM VDRM VD VD , notice. Doc. No. 5SYA1223-04 Nov. 01 page 2 of 9 5SHX 08F4502 Diode Data On-state (see Fig. 4
ABB Group
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IGCT
Abstract: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V m V Reverse , Half sine wave, TC = 85 °C tp tp tp tp IT IT = = = = = = 10 ms 1 ms 10 ms 1 ms 630 A 100 - 1000 A Tj = , energy per pulse 300 A/µs 3 µs 1 µs 10 µs 0.25 J f IT VD IT RS = = = = = 500 Hz 630 A 2700 V 630 A 1.2 , Turn-off delay time Fall time Min. off-time Turn-off energy per pulse 630 A 6.0 µs 1.0 µs 10 µs 2.9 J VD , change specifications without notice. Doc. No. 5SYA1223-04 Sep. 01 page 2 of 9 5SHX 08F4502 Diode ABB Group
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IGCT thyristor ABB

Abstract: IGCT thyristor current max VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 630 5×103 1.8 2 2800 V , 3 µs 7 µs 1 µs 0.25 J max Unit 800 A 630 For higher diT/dt , Conditions VT IT = 630 A, Tj = 115 °C Threshold voltage V(T0) Slope resistance rT Turn-on , 1 Symbol Conditions diT/dtcr f = 500 Hz, Tj = 115 °C, IT = 630 A, VD = 2700 V min min Rise time Symbol Conditions VD = 2700 V, Tj = 115 °C tdon IT = 630 A, di/dt = VD / Li tdon SF
ABB Switzerland
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IGCT thyristor current max VT115 Pressure transmitter TBD A115 B115 HFBR-1528 08F4510 5SYA1223-06

capacitor 1700 uF 400 VDC

Abstract: SCD15 580 580 580 580 580 580 580 630 630 630 630 630 630 630 630 630 630 630 630 dV /dt (V /µs) 650 650 , diode blocks oscillations from occurring and excess charge on the capacitor is discharged through the , , the snubber diode is forward biased and the snubber is activated. The energy trapped in the stray , bus voltage have a discharge path through the forward biased free-wheel diode, the IGBT, and the , Module Diode Repetitive Ic/Vce Characteristics Ipk(A) Surge 20 kHz S=Single, D=Dual Vrrm/If/trr(µs) Tc =
Cornell Dubilier
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capacitor 1700 uF 400 VDC SCD15 IGBT Snubber 329 UL94V0 SCD474K601A3Z25 SCC105K601H7-24 SCC155K601H7-24 SCC205K601H5-24 SCC205K601H5-28

pnp hfe 120

Abstract: LCC1 : Diode: BC477QF Quad Transistor Quad Ceramic Flat Pack PNP VDSS IC(cont) ID(cont) HFE(min) HFE(max) @ VCE , 32V 32V 32V IC(cont) 0.2A 0.2A 0.2A 0.2A HFE(min) 120 120 120 120 HFE(max) 630 630 630 630 @ VCE/IC 5 , Package Polarity FET: Diode: BCY58QF Quad Transistor Quad Ceramic Flat Pack NPN VDSS IC(cont) ID(cont) HFE(min) HFE(max) @ VCE/IC FT RDSS Voltage Current 32V 200mA 120 630 5/2m 125MHz Searched through , Package Polarity FET: Diode: BCY70QF Quad Transistor Quad Ceramic Flat Pac PNP VDSS IC(cont) ID(cont) HFE
Semelab
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pnp hfe 120 LCC1 transistor 200ma pnp 036w BC477 BC477A BC477B BC477CSM BC477CSM-JQR-B BC477DCSM

igct abb

Abstract: IGCT thyristor ABB VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.8 2 2800 V A kA , rT tp = 2 tp = IT = 630 A IT = 100 - 1000 A Slope resistance , , on-time Eon Turn-on energy per pulse f = 500 Hz Tj IT = 630 A VD = 3 µs VD = 2700 V 1 µs IT = 630 A 10 µs di/dtcrit RS = 1.2 300 A/µs , 630 A tdoff Turn-off delay time tf Fall time toff (min) Min. off-time
ABB Group
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gct thyristor IGCT thyristor HFBR-2528

5SHX 08F4502

Abstract: high power igct abb VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 630 5 1.80 2 2800 V A kA V m V Reverse , m Half sine wave, TC = 85 °C tp tp tp tp IT IT = = = = = = 10 ms 1 ms 10 ms 1 ms 630 A 100 - 1000 , energy per pulse 300 A/µs 3 µs 1 µs 10 µs 0.25 J f VD IT RS CCL = = = = = 500 Hz 2700 V 630 A 1.20 , Fall time Min. off-time Turn-off energy per pulse 630 A 6.0 µs 1.0 µs 10 µs 2.9 J VDM VD VD Tj ITGQ , notice. Doc. No. 5SYA 1223-04 Aug. 2000 page 2 of 10 5SHX 08F4502 Diode Data On-state (see Fig
ABB Group
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5SHX 08F4502 high power igct abb abb cs 400
Abstract: available Plastic or steel mounting bracket available Resistor or diode parallel to coil available ISO/TS , Mechanical Electrical 5 ms at nominal coil voltage Resistive load: Max. switched power: 630 W (SPST) 630 W (N.O.) 473 W (N.C.) Dielectric Strength 500 Vrms coil to contact (at sea level for 1 min , ORDERING DATA AZ9731-1C-12DC2 R1 Blank - Standard no diode, no resistor R1 - 180 Ohm ½ w resistor in , parallel with 24 V coil D2 - 1N4005 diode in parallel with coil, cathode on #86 terminal C1 - Plastic -
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AZ9731 ISO14001 ST9721-U1 ST9721-U2 ST9721-U3
Abstract: available Plastic or steel mounting bracket available Resistor or diode parallel to coil available ISO/TS , Mechanical Electrical 5 ms at nominal coil voltage Resistive load: Max. switched power: 630 W (SPST) 630 W (N.O.) 473 W (N.C.) Dielectric Strength 500 Vrms coil to contact (at sea level for 1 min , AZ9731-1C-12DC2 R1 Blank - Standard no diode, no resistor R1 - 180 Ohm ½ w resistor in parallel with 6 , V coil D2 - 1N4005 diode in parallel with coil, cathode on #86 terminal C1 - Plastic dust cover American Zettler
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ST9721

Abstract: 1N4005 ) Epoxy sealed versions available Plastic or steel mounting bracket available Resistor or diode parallel , power: 630 W (SPST) 630 W (N.O.) 473 W (N.C.) Life Expectancy Mechanical Electrical Minimum , ORDERING DATA AZ9731-1C-12DC2 R1 Blank - Standard no diode, no resistor R1 - 180 Ohm ½ w resistor in , with 24 V coil D2 - 1N4005 diode in parallel with coil, cathode on #86 terminal C1 - Plastic dust , ] 0.354 0.748 [9.00] [19.00] 1.043MAX [26.50] .453MAX [11.50] .031 [0.80] .248 [6.30
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ST9721 J2544 965MAX 224MAX 228MAX 5/23/07W
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