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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

DIODE byv10-20

Catalog Datasheet MFG & Type PDF Document Tags

DIODE byv10-20

Abstract: BYV1020 N AMER PHILIPS/DISCRETE blE D â  bbSa^ai BYV10 IAPX Jl SCHOTTKY BARRIER DIODE Schottky barrier diode with an integrated p-n junction protection ring in a SOD81 glass envelope and intended for , low forward voltage values are important. This diode is available in three reverse-voltage groups. QUICK REFERENCE DATA BYV10-20 Repetitive peak reverse voltage VRRM max. Reverse current |R < Average , < Junction temperature Ti max. 20 -30 30 1 1 0,55 30 125 40 40 V mA A V ns °C Fig.1 SOD81
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BYV10-20 DIODE byv10-20 BYV1020 JTP 55 diode U-28
Abstract: TO -22 0 AC BYV10-600P Ultrafast power diode 30 August 2013 Product data sheet 1. General description Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features , for this product BYV10-600P NXP Semiconductors Ultrafast power diode 5. Pinning , ) average forward current δ = 0.5 ; Tmb ≤ 109 °C; square-wave - 10 A - 20 A , BYV10-600P NXP Semiconductors Ultrafast power diode Symbol Parameter Conditions Min NXP Semiconductors
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Abstract: Philips Sem iconductors Product specification Schottky barrier diodes BYV10 series FEATURES DESCRIPTION â'¢ Low switching losses The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages , . UNIT repetitive peak reverse voltage BYV10-20 - 20 V BY V 10-30 - 30 V - , otherwise specified. PARAMETER > v R = VRRMmaxi Cd diode capacitance V 0 V; f = -
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MAM21S

BYV10-40

Abstract: BYV10-30 BYV10 series FEATURES DESCRIPTION · Low switching losses The BYV10-20 to BYV10-40 types are , . MAX. UNIT repetitive peak reverse voltage BYV10-20 - 20 V BYV10-30 - 30 V , 850 mV IR reverse current VR = VRRMmax; note 1 - - 1 mA Cd diode
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M3D119 SC01 Mounting 1996 1 Philips applications BYV1040 PHILIPS BYV10 MAM218 MBC051

sod81

Abstract: DIODE byv10-20 FEATURES DESCRIPTION · Low switching losses The BYV10-20 to BYV10-40 types are Schottky barrier , repetitive peak reverse voltage BYV10-20 - 20 V BYV10-30 - 30 V BYV10-40 - 40 , reverse current VR = VRRMmax; note 1 - - 1 mA Cd diode capacitance VR = 0 V; f = 1
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sod81

DIODE byv10-20

Abstract: BYV10 '¢ Polarity protection. DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in , PARAMETER CONDITIONS MIN. MAX. UNIT Vrrm repetitive peak reverse voltage BYV10-20 - 20 V BYV10 , = VRRMmax! "Ote 1 - - 1 mA cd diode capacitance Vr = 0 V; f = 1 MHz - 220 - pF Note 1. Pulsed test
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DO-34

Abstract: BA231 Small Signal Leaded Devices Detection Diode Diode Capacitance Type BA231 Pkg DO-35 VR (V , -34 (V) 20 125 (mA) 50 225 VR (V) 5 125 a > 'F (V) 1.00 0.80 (mA) 10 5 *rr (ns , BAT85 BAT86 BYV10-20 BYV10-30 BYV10-40 Pkg DO-34 DO-34 DO-34 DO-34 DO-34 DO-34 DO-34 DO-41 DO-41 DO-41 VR (V) 4 4 40 50 60 30 50 20 30 40 'F (mA) 30 30 30 30 30 200 200 1000 1000 1000 VF (V) 280 , 200nA 2(iA 5|xA 1mA 1mA 1mA 4 30 30 30 25 25 20 30 40 1 1 1 5 4 30 30 30 Temperature
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BAT81 1N825A BAV45A BAV45 BAS45 BA480 BA481 BAT82

BYV10

Abstract: BYV10-40 The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and , PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BYV10-20 - 20 V , Cd diode capacitance VR = 0 V; f = 1 MHz - 220 - pF Note 1. Pulsed test: tp =
Philips Semiconductors
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Abstract: TO -22 0 AC BYV10-600P Ultrafast power diode 3 January 2014 Product data sheet 1. General description Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features , V; dIF/dt = 100 A/µs; - 20 - ns δ = 0.5 ; Tmb ≤ 109 °C; square-wave pulse; Fig , for this product BYV10-600P NXP Semiconductors Ultrafast power diode 5. Pinning , ) average forward current δ = 0.5 ; Tmb ≤ 109 °C; square-wave - 10 A - 20 A NXP Semiconductors
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Abstract: SCHOTTKY BARRIER DIODE Schottky barrier diode with an integrated p-n junction protection ring in a SOD81 , general, in circuits, where low forward voltage values are important. This diode is available in three reverse-voltage groups. QUICK REFERENCE DATA B Y V 10-20 -30 20 -40 Repetitive peak reverse , » BYV10 RATINGS Limiting values in accordance with the Absolute Maximum System (I EC 134) BYV10-20 ,   â  Average forward current (d.c.) max. 20 max. 100 'F (A V ) max. A 65 to + 200 -
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S3T31

SOD106A

Abstract: 1N5819 sod87 MEDIUM-POWER RECTIFIERS SCHOTTKY-BARRIER DIODES OVERVIEW leaded Vr (V) 20 30 40 90 100 SOD81 1.0 A 1N5817 BYV10-20 1N5818 BYV 10-30 1N5819 BYV 10-40 - Medium-power rectifiers SOD87 1.0 A PRLL5817 PRLL5818 PRLL5819 - surface-mount SOD106A SOT223 1.0 A 1.0 A BYG90-20 BYG90-30 BYG90-40 BYG90-90 PBYR2100CT1 ) < ^F{AV)max. - - 1 ) double diode SCHOTTKY-BARRIER DIODES ratings type number , . (V) 20 30 40 20 30 40 Vr max. (V) 20 30 40 20 30 40 *F(AV) max. (A) 1 1 1 1 1 1 1 1 1 1 1 1
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SOD106A 1N5819 sod87 IMPLOTEC byv 20 diode 1N5817 Philips BYG90-20 PBYR2100CT4

ByV schottky

Abstract: C T SG S-TH O M SO N ^T/.llD lgoe ilLIgTroe M gi BYV10-20A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu ring very low forward voltage drop and fast , = 10ms Tamb = 25° C tp = 300|us Value 20 1 25 Sinusoidal Pulse 50 Rectangular Pulse - 65 to - 65 , the diode. Figure 1. Forward current versus forward voltage at low level (typical values). ct II This current dependsonly of diode capacitance and external circuit impedance. Satisfactory circuit be
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ByV schottky

SOD882

Abstract: sod87 Melf especially useful in high current, low voltage applications, a low VF Schottky diode (e.g. BAT754) reduces forward voltage by at least 20% compared to a standard Schottky diode (e.g. BAT54). · Low CD Schottky , capacitance. Compared to a standard Schottky diode (e.g. BAT54), the low CD Schottky diode 1PS79SB63 offers 20 times lower capacitance! to optional bias circuit RF in Rload MSD925 Diode- ring mixer , 30 V 20 V 1000 mA 500 mA VR 200 mA 30 mA IF max 120 mA Package 70 mA Size
Philips Semiconductors
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1PS76SB17 1PS76SB62 SOD882 sod87 Melf 1N5817 MELF 1PS74SB43 1PS59SB10 1PS59SB20 SC-79 SC-76 SC-70 SC-88 1PS10SB63 1PS10SB62

schematic receiver parabola

Abstract: MC34063 MOSFET on time vs. Cext 300 ton (ms) 250 200 150 100 50 0 0 5 10 15 20 25 20 25 CAPACIT OR Cext ( µF ) Figure 5: Overload Protection Off Time versus Cext T off time , . For proper use it is necessary that 4/17 AN1230 - APPLICATION NOTE Cout/Cext 20. The OLF also , mains, it will flow a current from the LNBA to the MI by means of the parasitic D-S TR1 diode. Moreover , across the diode that is load and temperature dependent. These effects can be minimized by using
STMicroelectronics
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schematic receiver parabola MC34063 MOSFET MC34063 smd schematics c band satellite receiver MC34063 current source schematics power supply satellite receiver SO-10 LNBP15SP

MC34063 current source

Abstract: MC34063 smd 15 20 25 20 25 CAPACITOR Cext ( µF ) Figure 5: Overload Protection Off Time versus , start. For proper use it is necessary that 4/17 AN1230 - APPLICATION NOTE Cout/Cext 20. The OLF , current from the LNBA to the MI by means of the parasitic D-S TR1 diode. Moreover, the TR2 (or TR4) BVb-e , pins (see figure 12). In this case we have to consider the voltage drop across the diode that is load , minimum drop. Diode D2 protects the LNBP by reverse current. If the LNBP is disabled (i.e. En is L), the
STMicroelectronics
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lnb schematic mc34063 schematic diagram receiver satellite schematics c band power supply satellite receiver schematics power supply for digital satellite receiver MC34063 5v

schematic receiver parabola

Abstract: MC34063 smd 15 20 25 20 25 CAPACITOR Cext ( µF ) Figure 5: Overload Protection Off Time versus , start. For proper use it is necessary that 4/17 AN1230 - APPLICATION NOTE Cout/Cext 20. The OLF , current from the LNBA to the MI by means of the parasitic D-S TR1 diode. Moreover, the TR2 (or TR4) BVb-e , pins (see figure 12). In this case we have to consider the voltage drop across the diode that is load , gives good efficiency because the LNBP is supplied with a minimum drop. Diode D2 protects the LNBP by
STMicroelectronics
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BYV10-40 SMD AN1230 antenna LNBP MC34063 step-up MULTIWATT15 package mc3406

CTX12S

Abstract: CTX12SL diode in fault tolerant Switch Mode Power Supplies. The 20, 25 and 30V products are single or dual , uu X yy zz uu Current rating 20 = 20 Amps or 2 x 10 Amps Complement of information L = Low VF , configurations are available. 10V, 20V , 30V and 40V Voltage (V) Current (mA) 10 20 3000 V F , (A) 20 15 2 x 20 2 x 40 2 x 60 0.5 0.5 20 1 3 2 3 5 25 10 15 2 x 10 1 2 3 8 2 x 7.5 2 x 10 30 2 x 15 2 x 20 2 x 30 2 x 40 Part Number STPS20L15D
STMicroelectronics
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CTX12S CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 PL-00-513 SGRECT/0802

byv10-40

Abstract: for high efficiency SCHOTTKY BARRIER DIODE DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN , , derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive , °C °C Notes : ( 1 ) IF = 200 mA, IR = 200 mA, R L = 100 ; measured at IR = 20 mA Page 1 of 2 , 0.50 20 0.25 10 0 0 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, (°C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 20 FIG.4 -
EIC Semiconductor
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UL94V-O MIL-STD-202

702 TRANSISTOR smd

Abstract: SIEMENS AVR GENERATOR 19 19 20 20 20 21 21 22 23 23 24 25 3. Demo board functionality description . . . . , Switch S7, ALARM on operating current . . . 3.5.8 Switch S8, ALARM on monitor diode current . 3.5.9 , . . . . . 4.3.2 Step E: optimising monitor diode to laser driver connection . . . . . . . . . . . , . . . 3.10.4 Monitor diode feedback components: C45, R50 and C18 . . . . . . 3.10.5 Limiting the , . . . . . . . . 20 23 43 52 53 53 54 55 63 65 Philips Semiconductors
Philips Semiconductors
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OM5811 TP97036 TZA3047 702 TRANSISTOR smd SIEMENS AVR GENERATOR fire alarm abstract using thermistor and op-amp Phycomp 2238 Laser power supply abstract 2238 916 15636 TZA3010/11/47 AN10191-01 TZA3010 TZA3011

DATASHEET OF IC 741

Abstract: IC 741 OPAMP 1995 Pages: 20 Summary: This paper describes the evaluation board for the Motor Control ICs , EMF has to recover from a negative diode fly-back pulse back to a positive EMF voltage (or vice , crossing with correct polarity Figure 5 after a leading edge of the diode fly-back pulse, the internal , zener diode of 8.2 V. For the calculations a zener diode is taken with a tolerance of ± 5 %. Since we , on the zener diode voltage and the resistors R9 up to R13. The influence of the offset voltage can
Philips Semiconductors
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DATASHEET OF IC 741 IC 741 OPAMP OF IC 741 op-amp ic 741 op-amp OP-AMP ic 741 741 adjustable current limiter TDA5143/TDA5144 EIE/AN94002 TDA5143 TDA5144 TDA5143/5144 TDA5143T
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