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DIODE byv10-20

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: N AMER PHILIPS/DISCRETE blE D â  bbSa^ai BYV10 IAPX Jl SCHOTTKY BARRIER DIODE Schottky barrier diode with an integrated p-n junction protection ring in a SOD81 glass envelope and intended for , low forward voltage values are important. This diode is available in three reverse-voltage groups. QUICK REFERENCE DATA BYV10-20 Repetitive peak reverse voltage VRRM max. Reverse current |R < Average , < Junction temperature Ti max. 20 -30 30 1 1 0,55 30 125 40 40 V mA A V ns °C Fig.1 SOD81 -
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BYV10-20 BYV1020 JTP 55 diode U-28
Abstract: TO -22 0 AC BYV10-600P Ultrafast power diode 30 August 2013 Product data sheet 1. General description Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features , for this product BYV10-600P NXP Semiconductors Ultrafast power diode 5. Pinning , ) average forward current δ = 0.5 ; Tmb ≤ 109 °C; square-wave - 10 A - 20 A , BYV10-600P NXP Semiconductors Ultrafast power diode Symbol Parameter Conditions Min NXP Semiconductors
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Abstract: Philips Sem iconductors Product specification Schottky barrier diodes BYV10 series FEATURES DESCRIPTION â'¢ Low switching losses The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages , . UNIT repetitive peak reverse voltage BYV10-20 - 20 V BY V 10-30 - 30 V - , otherwise specified. PARAMETER > v R = VRRMmaxi Cd diode capacitance V 0 V; f = -
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MAM21S
Abstract: BYV10 series FEATURES DESCRIPTION · Low switching losses The BYV10-20 to BYV10-40 types are , . MAX. UNIT repetitive peak reverse voltage BYV10-20 - 20 V BYV10-30 - 30 V , 850 mV IR reverse current VR = VRRMmax; note 1 - - 1 mA Cd diode -
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M3D119 SC01 Mounting 1996 1 PHILIPS BYV10 Philips applications BYV1040 MAM218 MBC051
Abstract: FEATURES DESCRIPTION · Low switching losses The BYV10-20 to BYV10-40 types are Schottky barrier , repetitive peak reverse voltage BYV10-20 - 20 V BYV10-30 - 30 V BYV10-40 - 40 , reverse current VR = VRRMmax; note 1 - - 1 mA Cd diode capacitance VR = 0 V; f = 1 -
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sod81
Abstract: '¢ Polarity protection. DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in , PARAMETER CONDITIONS MIN. MAX. UNIT Vrrm repetitive peak reverse voltage BYV10-20 - 20 V BYV10 , = VRRMmax! "Ote 1 - - 1 mA cd diode capacitance Vr = 0 V; f = 1 MHz - 220 - pF Note 1. Pulsed test -
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Abstract: Small Signal Leaded Devices Detection Diode Diode Capacitance Type BA231 Pkg DO-35 VR (V , -34 (V) 20 125 (mA) 50 225 VR (V) 5 125 a > 'F (V) 1.00 0.80 (mA) 10 5 *rr (ns , BAT85 BAT86 BYV10-20 BYV10-30 BYV10-40 Pkg DO-34 DO-34 DO-34 DO-34 DO-34 DO-34 DO-34 DO-41 DO-41 DO-41 VR (V) 4 4 40 50 60 30 50 20 30 40 'F (mA) 30 30 30 30 30 200 200 1000 1000 1000 VF (V) 280 , 200nA 2(iA 5|xA 1mA 1mA 1mA 4 30 30 30 25 25 20 30 40 1 1 1 5 4 30 30 30 Temperature -
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BAT81 1N825A BAV45A BAV45 BAS45 BA480 BA481 BAT82
Abstract: The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and , PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BYV10-20 - 20 V , Cd diode capacitance VR = 0 V; f = 1 MHz - 220 - pF Note 1. Pulsed test: tp = Philips Semiconductors
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Abstract: TO -22 0 AC BYV10-600P Ultrafast power diode 3 January 2014 Product data sheet 1. General description Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features , V; dIF/dt = 100 A/Âus; - 20 - ns δ = 0.5 ; Tmb ≤ 109 °C; square-wave pulse; Fig , for this product BYV10-600P NXP Semiconductors Ultrafast power diode 5. Pinning , ) average forward current δ = 0.5 ; Tmb ≤ 109 °C; square-wave - 10 A - 20 A NXP Semiconductors
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Abstract: SCHOTTKY BARRIER DIODE Schottky barrier diode with an integrated p-n junction protection ring in a SOD81 , general, in circuits, where low forward voltage values are important. This diode is available in three reverse-voltage groups. QUICK REFERENCE DATA B Y V 10-20 -30 20 -40 Repetitive peak reverse , » BYV10 RATINGS Limiting values in accordance with the Absolute Maximum System (I EC 134) BYV10-20 ,   â  Average forward current (d.c.) max. 20 max. 100 'F (A V ) max. A 65 to + 200 -
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S3T31
Abstract: MEDIUM-POWER RECTIFIERS SCHOTTKY-BARRIER DIODES OVERVIEW leaded Vr (V) 20 30 40 90 100 SOD81 1.0 A 1N5817 BYV10-20 1N5818 BYV 10-30 1N5819 BYV 10-40 - Medium-power rectifiers SOD87 1.0 A PRLL5817 PRLL5818 PRLL5819 - surface-mount SOD106A SOT223 1.0 A 1.0 A BYG90-20 BYG90-30 BYG90-40 BYG90-90 PBYR2100CT1 ) < ^F{AV)max. - - 1 ) double diode SCHOTTKY-BARRIER DIODES ratings type number , . (V) 20 30 40 20 30 40 Vr max. (V) 20 30 40 20 30 40 *F(AV) max. (A) 1 1 1 1 1 1 1 1 1 1 1 1 -
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SOD106A 1N5819 sod87 IMPLOTEC byv 20 diode 1N5817 Philips BYG90-20 PBYR2100CT4
Abstract: C T SG S-TH O M SO N ^T/.llD lgoe ilLIgTroe M gi BYV10-20A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu ring very low forward voltage drop and fast , = 10ms Tamb = 25° C tp = 300|us Value 20 1 25 Sinusoidal Pulse 50 Rectangular Pulse - 65 to - 65 , the diode. Figure 1. Forward current versus forward voltage at low level (typical values). ct II This current dependsonly of diode capacitance and external circuit impedance. Satisfactory circuit be -
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ByV schottky
Abstract: especially useful in high current, low voltage applications, a low VF Schottky diode (e.g. BAT754) reduces forward voltage by at least 20% compared to a standard Schottky diode (e.g. BAT54). · Low CD Schottky , capacitance. Compared to a standard Schottky diode (e.g. BAT54), the low CD Schottky diode 1PS79SB63 offers 20 times lower capacitance! to optional bias circuit RF in Rload MSD925 Diode- ring mixer , 30 V 20 V 1000 mA 500 mA VR 200 mA 30 mA IF max 120 mA Package 70 mA Size Philips Semiconductors
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1PS76SB17 1PS76SB62 SOD882 sod87 Melf 1PS74SB43 1PS59SB10 1N5817 MELF 1PS59SB20 SC-79 SC-76 SC-70 SC-88 1PS10SB63 1PS10SB62
Abstract: on time vs. Cext 300 ton (ms) 250 200 150 100 50 0 0 5 10 15 20 25 20 25 CAPACIT OR Cext ( uF ) Figure 5: Overload Protection Off Time versus Cext T off time , . For proper use it is necessary that 4/17 AN1230 - APPLICATION NOTE Cout/Cext 20. The OLF also , mains, it will flow a current from the LNBA to the MI by means of the parasitic D-S TR1 diode. Moreover , across the diode that is load and temperature dependent. These effects can be minimized by using STMicroelectronics
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schematic receiver parabola MC34063 MOSFET MC34063 smd schematics c band satellite receiver MC34063 current source schematic diagram receiver satellite SO-10 LNBP15SP
Abstract: 15 20 25 20 25 CAPACITOR Cext ( uF ) Figure 5: Overload Protection Off Time versus , start. For proper use it is necessary that 4/17 AN1230 - APPLICATION NOTE Cout/Cext 20. The OLF , current from the LNBA to the MI by means of the parasitic D-S TR1 diode. Moreover, the TR2 (or TR4) BVb-e , pins (see figure 12). In this case we have to consider the voltage drop across the diode that is load , minimum drop. Diode D2 protects the LNBP by reverse current. If the LNBP is disabled (i.e. En is L), the STMicroelectronics
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lnb schematic mc34063 MC34063 5v r1505 MC34063A TEST OSCILLOSCOPE receiver satellite
Abstract: 15 20 25 20 25 CAPACITOR Cext ( uF ) Figure 5: Overload Protection Off Time versus , start. For proper use it is necessary that 4/17 AN1230 - APPLICATION NOTE Cout/Cext 20. The OLF , current from the LNBA to the MI by means of the parasitic D-S TR1 diode. Moreover, the TR2 (or TR4) BVb-e , pins (see figure 12). In this case we have to consider the voltage drop across the diode that is load , gives good efficiency because the LNBP is supplied with a minimum drop. Diode D2 protects the LNBP by STMicroelectronics
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BYV10-40 SMD AN1230 antenna LNBP LNBP20CR MULTIWATT15 package MC34063 step-up
Abstract: diode in fault tolerant Switch Mode Power Supplies. The 20, 25 and 30V products are single or dual , uu X yy zz uu Current rating 20 = 20 Amps or 2 x 10 Amps Complement of information L = Low VF , configurations are available. 10V, 20V , 30V and 40V Voltage (V) Current (mA) 10 20 3000 V F , (A) 20 15 2 x 20 2 x 40 2 x 60 0.5 0.5 20 1 3 2 3 5 25 10 15 2 x 10 1 2 3 8 2 x 7.5 2 x 10 30 2 x 15 2 x 20 2 x 30 2 x 40 Part Number STPS20L15D STMicroelectronics
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CTX12S CTX12SL BYV255-200 W210PIV400 smd schottky diode A2 SOD-123 W210PIV-400 PL-00-513 SGRECT/0802
Abstract: for high efficiency SCHOTTKY BARRIER DIODE DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN , , derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive , °C °C Notes : ( 1 ) IF = 200 mA, IR = 200 mA, R L = 100 ; measured at IR = 20 mA Page 1 of 2 , 0.50 20 0.25 10 0 0 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, (°C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS 20 FIG.4 - EIC Semiconductor
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UL94V-O MIL-STD-202
Abstract: 19 19 20 20 20 21 21 22 23 23 24 25 3. Demo board functionality description . . . . , Switch S7, ALARM on operating current . . . 3.5.8 Switch S8, ALARM on monitor diode current . 3.5.9 , . . . . . 4.3.2 Step E: optimising monitor diode to laser driver connection . . . . . . . . . . . , . . . 3.10.4 Monitor diode feedback components: C45, R50 and C18 . . . . . . 3.10.5 Limiting the , . . . . . . . . 20 23 43 52 53 53 54 55 63 65 Philips Semiconductors Philips Semiconductors
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TP97036 702 TRANSISTOR smd SIEMENS AVR GENERATOR Phycomp 2238 Laser power supply abstract 2238 916 15636 3006p 205 Variable Resistor OM5811 TZA3010/11/47 AN10191-01 TZA3010 TZA3011
Abstract: 1995 Pages: 20 Summary: This paper describes the evaluation board for the Motor Control ICs , EMF has to recover from a negative diode fly-back pulse back to a positive EMF voltage (or vice , crossing with correct polarity Figure 5 after a leading edge of the diode fly-back pulse, the internal , zener diode of 8.2 V. For the calculations a zener diode is taken with a tolerance of ± 5 %. Since we , on the zener diode voltage and the resistors R9 up to R13. The influence of the offset voltage can Philips Semiconductors
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DATASHEET OF IC 741 IC 741 OPAMP OF IC 741 op-amp ic 741 op-amp OP-AMP ic 741 741 adjustable current limiter TDA5143/TDA5144 EIE/AN94002 TDA5143 TDA5144 TDA5143/5144 TDA5143T
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