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DIODE bridge 255

Catalog Datasheet MFG & Type PDF Document Tags

Varistor RU

Abstract: SE110N (Serial Signal Generator for SLA704xM) Diode (Power Zener) Diode (SBD) Axial Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Ultra-Fast Recovery Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (SBD) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Page Part No. RBV
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PSKD 255

Abstract: DIODE bridge 255 PSKD 255 Diode Modules IFRMS IFAVM VRRM Preliminary Data Sheet = 2x 450 A = 2x 270 A , 1800 Type 3 1 2 1 PSKD 255/08 PSKD 255/12 PSKD 255/14 PSKD 255/16 PSKD 255/18 , diode; DC current module diode; DC current module t = 1 min t=1s other values see PSKT 255 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g QS IRM TVJ = 125°C; IF = 400 A , mm mm m/s 2 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise
POWERSEM
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SE012

Abstract: SE140N (Serial Signal Generator for SLA704xM) Diode (Power Zener) Diode (SBD) Axial Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Ultra-Fast Recovery Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (SBD) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Page Part No. RBV
Sanken Electric
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HT 2811

Abstract: MDA100 MDAIOO s.» MINIATURE INTEGRAL DIODE ASSEMBLIES . . . with diffused-silicon dice interconnected and encapsulated into voidless rectifier bridge circuits. â'¢ High Resistance to Shock and Vibration â'¢ High Dielectric Strength â'¢ Economical MAXIMUM RATINGS Rating (Per Diode) Symbol MC A , Capacitive Load Vdc Vdc 32 50 64 100 137 200 255 400 382 600 510 800 640 1000 Volts Volts Sine Wave RMS , bridge operation, resistive toad. 60 Hz, Ta - 5S°C) 'O 1.5 Amp Non-Repetitive Peak Surge Current
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2SC5586

Abstract: transistor 2SC5586 Generator for SLA704xM) Diode (Power Zener) Diode (SBD) Axial Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Ultra-Fast Recovery Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (SBD) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode (Rectifier) Bridge Diode
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MDD 500-22N1

Abstract: ixys MDD 26 - 14 (per diode) D6 Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output , current and ambient temperature (per diode) D6 Fig. 4 Single phase rectifier bridge: Power , forward current and ambient temperature (per diode) D6 Fig. 4 Single phase rectifier bridge: Power , current and ambient temperature (per diode) D6 Fig. 4 Single phase rectifier bridge: Power , and ambient temperature (per diode) D6 Fig. 4 Single phase rectifier bridge: Power dissipation
IXYS
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ixys MDD 26 - 14

Abstract: MDD 500-22N1 temperature (per diode) D6 Fig. 4 Single phase rectifier bridge: Power dissipation versus direct , current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation , and ambient temperature (per diode) D6 Fig. 4 Single phase rectifier bridge: Power dissipation , forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power , forward current and ambient temperature (per diode) D6 Fig. 4 Single phase rectifier bridge: Power
IXYS
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255-16N1

Abstract: ixys MCC 700 MDD 255 High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 , IdAVM © 2000 IXYS All rights reserved 2-3 MDD 255 2500 Fig. 6 Three phase rectifier bridge , diode; DC current per module per diode; DC current per module 0.140 0.07 0.18 0.09 q V , 255 TVJ = 125°C; IF = 400 A; -di/dt = 50 A/ms 700 260 Creeping distance on surface Creepage , Dimensions in mm (1 mm = 0.0394") mm mm m/s2 Data according to IEC 60747 and refer to a single diode
IXYS
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M8x20

Abstract: 25518N MDD 255 High Power Diode Modules VRSM VDSM V VRRM VDRM V 1200 1400 1600 1800 2000 , diode unless otherwise stated. 1-3 MDD 255 106 10000 FSM It A 50 Hz 80 % VRRM TVJ = , 600 A; TVJ = 25°C 1.4 For power-loss calculations only TVJ = TVJM 0.8 0.6 per diode; DC current per module per diode; DC current per module 0.140 0.07 0.18 0.09 · · · · , other values see MCC 255 QS IRM TVJ = 125°C; IF = 400 A; -di/dt = 50 A/µs 700 260 µC A
IXYS
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Abstract: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 , per diode; DC current per module per diode; DC current per module 0.140 0.07 0.18 0.09 â , =1s Features other values see MCC 255 QS IRM TVJ = 125°C; IF = 400 A; -di/dt = 50 A/µs 700 260 , 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100203a 1-3 MDD 255 106 IXYS
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25518N

Abstract: MDD 255 High Power Diode Modules VRSM VDSM V 1300 1500 1700 1900 2100 2300 Symbol IFRMS IFAVM , ; TVJ = 25°C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module other values see MCC 255 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g , rights reserved 1-3 749 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions MDD 255 10000 106
IXYS
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255-16N1

Abstract: MDD25 MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 , = 25°C 1.4 For power-loss calculations only TVJ = TVJM 0.8 0.6 per diode; DC current per module per diode; DC current per module 0.140 0.07 0.18 0.09 Supplies for DC power , other values see MCC 255 QS IRM TVJ = 125°C; IF = 400 A; -di/dt = 50 A/s 700 260 C A , 12.7 9.6 50 mm mm m/s2 Data according to IEC 60747 and refer to a single diode unless
IXYS
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Abstract: BY 251.BY 255, BY 1600.BY 2000 Silizium Gleichrichter Silicon Rectifier 3A Nominal , Type Typ BY 251 BY 252 BY 253 BY 254 BY 255 BY 1600 BY 1800 BY 2000 Repetitive peak , TQünSH DOGGITD b 6 4 100 A BY 251.BY 255, BY1600.BY 2000 Junction temperature - , SMD Gurtung von SMD Surface mount diodes and bridge rectifiers are delivered in Polystyrol , in [mm]) (alle MaÃe in [mm]) Diode MiniMelf 0 1.6x3.5 Diode Melf 0 2.5x5 Diode -
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UL94V-0 R0D1RS14 000017S
Abstract: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 , K/W K/W K/W µC A mm mm m/s2 For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module other values see MCC 255 IF = 400 A; -di/dt = 50 A/µs , Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the , 1-4 MDD 255 Dimensions in mm (1 mm = 0.0394") M8 x 16 SW 13 2.8 x 0.8 52 +0 -1,4 49 2 IXYS
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255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1
Abstract: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 , calculations only TVJ = TVJM 0.8 0.6 V mW RthJC per diode; DC current per module per diode; DC current per module 0.14 0.07 0.18 0.09 Advantages V VT0 rt â'¢ Supplies , values see MCC 255 QS IRM IF = 400 A; -di/dt = 50 A/µs; TVJ = 125°C 700 260 µC A dS , 12.7 9.6 50 mm mm m/s2 Data according to IEC 60747 and refer to a single diode unless IXYS
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E72873 MDD255
Abstract: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 , calculations only TVJ = TVJM 0.8 0.6 V mW RthJC per diode; DC current per module per diode; DC current per module 0.14 0.07 0.18 0.09 Advantages V VT0 rt â'¢ Supplies , values see MCC 255 QS IRM IF = 400 A; -di/dt = 50 A/µs; TVJ = 125°C 700 260 µC A dS , 12.7 9.6 50 mm mm m/s2 Data according to IEC 60747 and refer to a single diode unless IXYS
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Eupec bsm 25 gb 120

Abstract: diode 1481 phase bridge Chopper config. Dual Diode (for circuit see outline) Max. DC-collector current (A , switch / diode B = Halfbridge D = 3-phase full bridge T = Tripack (3 single switches) P = Power , . power the Home Products Diode News Contact Editorials Job Offers VRRM , . represent the current rating [A] . . . . . . . . . . . V RRM max. 800 V D 255 N D 255 K , ) Pellet: 65 DN 06 (IFAVM = 8470A, 600V) Diode Pellets click on part-no. to select datasheet - click
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Eupec bsm 25 gb 120 diode 1481 EUPEC Thyristor HIGH VOLTAGE THYRISTOR Thyristor PIN CONFIGURATION DISC THYRISTOR

RM20TN-H

Abstract: N L T C W M U V Description: Mitsubishi Three-Phase Diode Bridge Modules are , module consists of six diodes and the interconnect required to form a complete threephase bridge circuit. Each diode is electrically insulated from the mounting base plate for easy mounting on a , 2.55 64.8 R 0.20 5.0 E 0.59 15.0 S 0.35 9.0 Inverters F 0.54 , DC Output Current (Tb = 100°C) IO 24 Amperes IFSM 255 Amperes I2t for Fusing
Mitsubishi
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RM20TN-H

RM20TN-H

Abstract: RM20TN-H A S D G H E R B Q R "Y" F P + ~ ~ ~ TYP K Z - "X" N J L T C W M U V Description: Mitsubishi Three-Phase Diode Bridge , bridge circuit. Each diode is electrically insulated from the mounting base plate for easy mounting on , 14.0 2.55 64.8 R 0.20 5.0 0.59 15.0 S 0.35 9.0 F 0.54 13.7 T , (Tb = 100°C) IO 24 Amperes IFSM 255 Amperes I2 t for Fusing (Value for One Cycle
Mitsubishi
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Abstract: RM20TN-H Description: M itsubishi Three-P hase Diode Bridge M odules are designed fo r use in applications requiring rectifi cation of th ree-phase AC lines into DC voltage. Each m odule consists of six diodes and the interconnect required to form a com plete threephase bridge circuit. Each diode is ele , 1.18 0.35 2.55 0.59 0.54 2.32 2.21 0.48 0.40 1.60 0.05 M illimeters 71.8 30.0 9.0 64.8 15.0 13.7 , 255 270 - 4 0 ~ +125 - 4 0 ~ +125 1000 0.78 ~ 0.98 0.78 ~ 0.98 2500 Units Volts Volts Volts Am peres -
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20TN-H
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