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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

DIODE T25 4 ko

Catalog Datasheet MFG & Type PDF Document Tags

diode t25 4 g0

Abstract: DIODE T25 4 ko the VCO and the phase comparator. 4) The VCO output frequency division can be selected on the SELECT , 3760MHz 1/4 -2075 SSOP-B14 Absolute maximum ratings (Ta=25) Symbol Supply voltage Input voltage , Power dissipation *1 *2 *3 *4 Operating is not guaranteed. In the case of exceeding Ta = 25, 4.0mW , to "H" and the output frequency is reduced to 1/4, the frequency range and the frequency sensitivity will be all reduced to 1/4. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/18
ROHM
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diode t25 4 g0 DIODE T25 4 ko T-75 High voltage diode figure T-75 DIODE T-75 High voltage diode BU2373FV BU2374FV 11069EBT07 3760MH 3765MH 43100MH

DIODE T25 4 ko

Abstract: diode t25 4 L0  95 - IIS Turn-off Delay Time tdu>ffi Ri =3iJ - 300 - ns Fall Time tf - ]70 - lis Ko , '¢ Low On-Resistance Ros (on) S 0 Q45 Si. Vc 10 V, lD â'" 10 A 4 V, l0- 10 A ftDS (on) £ 0.065 Q, Vr,s â'¢ Capable of 4 V Gate Drive â'¢ Low Drive Current â'¢ High Speed Switching â'¢ High Density , Impulse»' 40 A Cody Drain Diode I IMI 10 A Reverse Drain Current Channel Dissipation Pch(Tc = 25t}" 28 W Channel Dissipation Pel." 4 w Channel Temperature Tch 150 "c Storage Temperature Tstg â
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4AK17 2SK972 2SK1095 SP-10 diode t25 4 L0 n channel fet array

9010J

Abstract: CE-300 % tSlOO ms Delay Time (If =16 m A , Vc c =5 V, TA=25°C) High - Low SFH6135 (Rl =4. 1 kO) SFH6136 (Rl = 1.9 kQ) Low - High SFH6135 (Rl =4. 1 kO) SFH6136 (Rl = 1.9 kß) tpHL W hl tpHL tfUL 0.3 (£1.5) 0.2 , ission rate and a high isolation resistance. They have a G a A IA s infrared emitting diode, optically co , not allow ed to ex cee d the maximum perm issible reference voltages. 016 (41 ).^ , \rn- 100(2 &4 , n mA Peak Forward
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SFH613 9010J CE-300 CE700 H6136 SFH6135/6136

DIODE T25 4 EO

Abstract: DIODE T25 4 bo pack envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control , inductive loads. PINNING -SOT199 BUK627-500B PowerMOS transistor Fast recovery diode FET 5bE D â , 0.8 Ã2 resistance V Diode reverse recovery time 250 ns PIN CONFIGURATION SYMBOL PIN , . UNIT VDS Drain-source voltage - - 500 V Vdgr Drain-gate voltage Rqs = 20 kO - 500 V ±Vqs , transistor BUK627-500B Fast recovery diode FET PHILIPS INTERNATIONAL 5bE ]> â  711Dfl2h â¡044S0b 004 HPHIN
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DIODE T25 4 EO DIODE T25 4 bo DIODE T25-4-bo diode,FET 71IDA2 T-39-1 T-39-11 0044S10
Abstract: Laser Diodes 808 nm HHL Packaged Laser Diode BLD-81-tt-2W-10-F-f-c-l-22 BLD-81-tt-5W-10-F-f-c-l-22 BLD-81-tt-8W-10-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized , quality. The products are achieved by transforming the asymmetric radiation from the laser diode chip , www.lasercomponents.fr Laser Diodes 808 nm HHL Packaged Laser Diode Symbol Unit BLD , V 9.8 Thermistor Rt (KO)/β(25°C) 10±5%/3477 Operation temperature Top °C Laser Components
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BLD-81-
Abstract: Laser Diodes 660 nm ~ 690 nm HHL Window Packaged Laser Diode BLD-66-10-1W-10-W BLD-68-10-1W-10-W BLD-67-10-1W-10-W BLD-69-10-1W-10-W High Power Laser Diode Modules are manufactured by adopting , diode chip into an output fiber with small core diameter by using special micro optics. Inspecting and , info@lasercomponents.fr www.lasercomponents.fr Laser Diodes 660 nm ~ 690 nm HHL Window Packaged Laser Diode , Vre V 2 Current lmo µA 200 ~ 2000 Max. current lt A 4 Max. voltage Laser Components
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Abstract: lt A 4 Max. voltage Vt V 9.8 Thermistor Rt (KO)/β(25°C) 10±5%/3477 , Laser Diodes 635 nm ~ 650 nm HHL Package Fiber-Coupled Laser Diode BLD-63-05-400-10-F-f-c-l-22 BLD-65-10-400-10-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized , quality. The products are achieved by transforming the asymmetric radiation from the laser diode chip , Package Fiber-Coupled Laser Diode BLD-63-05-400-10-F-f-c-l-22 BLD Laser Components
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BLD-63-05-400-10-F- BLD-65-10-400-10-F-
Abstract: Laser Diodes 976 nm Butterfly Packaged Laser Diode BLD-98-tt-3W-14-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in , by transforming the asymmetric radiation from the laser diode chip into an output fiber with small , Packaged Laser Diode Specifications (25 °C) Unit BLD-98-tt-3W-14-F-10-c-l-22 CW-output power , Thermistor Rt (KO)/β(25°C) 10±5%/3477 Operation temperature Top °C 10 ~ 30 Laser Components
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BLD-98-
Abstract: Laser Diodes 405nm Butterfly Packaged Diode Laser BLD-41-10-100-14-F-6-c-l-22 LASER COMPONENTS High Power Diode Laser Modules are manufactured by adopting specialized fiber-coupling techniques , achieved by transforming the asymmetric radiation from the laser diode chip into an output fiber with , www.lasercomponents.fr Laser Diodes 405nm Butterfly Packaged Diode Laser BLD , (KO)/β(25°C) 10±5%/3477 Operation temperature Top °C 10 ~ 30 Storage temperature Laser Components
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BLD-41-10-100-14-F-6-

DIODE T25 4 k0

Abstract: DIODE T25 4 ko TVS Diode for Proximity Switch Input Protection PROTECTION PRODUCTS - MicroClamp® Description The , Minimum Typical Maximum 33 Units V V T=25 OC T=-40 OC to 125 OC T=25 OC T=125 OC 36 34 45 1 , VF VC Cj VRWM = 33V µA V V pF IF= 200mA IPP = 2A, tp = 1.2/50µs VR = 0V, f = 1MHz T=25 OC T , Voltage -VC (V) 60 75 Voltage (V) 0 1 2 3 Peak Pulse Current - IPP (A) 4 5 50 50 40 25 , Parameters: tr = 8µs; td = 20µs Junction Capacitance vs. Reverse Voltage 30 TA = 25OC f = 1 MHz 4
Semtech
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3601P DIODE T25 4 k0 Diode MARKING t40 SLP1006P2 AEC-Q100

Marking Code m sc70-6

Abstract: jedec SC-70-6 package Components Leader Tape 500mm minimum or 125 empty pockets July 1999, Rev. C m 3HbIìti7l4 Q0fc»2öö4 T25 , continuous, 0.65 A peak. Rdsiom, = 4 à @ VGS= 4.5 V, RDS(ON) = 5 Ã2 ( ! Vâ'žs= 2.7 V. Very low level , . m SC70-6 m S.p."i>OI " I! SO-8 SOT-223 SC70-6 The pinouts are symmetrical; pin 1 and 4 are , 4.5V, Id = 0.22 A 2.6 4 £2 Tj =125°C 5.3 7 VGS = 2.7V, Id = 0.19A 3.7 5 'â¡(ON , - On Rise Time 4.5 10 ns *D(on) Tum - Off Delay Time 4 8 ns t, Tum-Off Fall Time 3.2 7 ns
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Marking Code m sc70-6 jedec SC-70-6 package SPI SC70-6 Marking Code m sc70-6 25 fdg6301n bb sc70-6 FDG6301N MIL-STD-883D RS-481 SC-70

2SK1225

Abstract: 2SK1206 Diode Reverse Drain Current Io. 12 A Channel Dissipation /V 60 W Channel Temperature T 150 °C , Q HITACHI/(OPTOELECTRONICS) ELECTRICAL CHARACTERISTICS (T.=25 °C) 50 100 Case Temperature TL , Capacitance c,â'ž - 2050 - pF Output Capacitance Con VDJ=10V, K^O./slMHz - 720 - PF Reverse Transfer , 85 - ns Turn-off Delay Time t*°m â'" 145 â'" ns Fall Time t, â'" 85 â'" ns Body-Drain Diode Forward Voltage Vor /r=12A, Kc,s=0 - 1.0 - V Body-Drain Diode Reverse Recovery Time L /,= 12A, V(,5=0
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2SK1225 2SK1206 100MA G0132 2SK1225-
Abstract: µClamp3601P TVS Diode for Proximity Switch Input Protection PROTECTION PRODUCTS - MicroClamp , Conditions Minimum T=25 OC 34 Units V 36 T=-40 OC to 125 OC Maximum 33 VRWM , Cj Reverse Breakdown Voltage © 2012 Semtech Corporation VR = 0V, f = 1MHz 45 T=25 OC 1 T=125 OC 5 T=25 OC 25 T=-40 OC to 125 OC 35 2 V µA pF , Current 50 40 50 25 30 0 0 1 2 3 Peak Pulse Current - IPP (A) 4 5 0 Semtech
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DIODE T25 4 ko

Abstract: 2SK1206 ±20 V Drain Current lo 12 A Drain Peak Current I D\puht)* 48 A Body-Drain Diode Reverse Drain Current , ) ELECTRICAL CHARACTERISTICS (T.=25 °C) 50 100 Case Temperature TL (*C ) Item Symbol Test Condition min. typ , VDJ=10V, K^O./slMHz - 720 - PF Reverse Transfer Capacitance c,â'ž - 80 â'" pF Turn-on Delay Time , Time '/ â'" 85 â'" ns Body-Drain Diode Forward Voltage Vor /r=12A, Kc,s=0 - 1.0 - V Body-Drain Diode , / / 0 2 4 6 8 10 G*le-Source VoJuge Vcs (V) DRAIN-SOURCE SATURATION VOLTAGE VS. GATE-SOURCE VOLTAGE I
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40V 12A N-Channel MOS HIV DIODE DIODE T25 4 lo

nas77

Abstract: BTW63-600R operation in fast power inverters. For reverse-blocking operation use with a series diode, for reverse-conducting operation use with an anti-parallel diode. QUICK REFERENCE DATA BTW63-600R 800R 1000R , Repetitive peak on-state current 'TRIM max. 250 A Circuit-commutated turn-off time suffix K < 4 /us suffix N tq < 6 jUS MECHANICAL DATA Fig. 1 TO-48 2.0_ min î4inx28UNF ._\ . r 2.9min i12.4 , washer); 56264b (insulating bush). Dimensions in mm K.O M0171 Supplied with device: T nut, 1 lock
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BTW63 IEC134 nas77 56264a 600R 800R 28UNF M28S0 T-05- M0152
Abstract: .) Typ. Spectrum of 976 nm diode laser (T=25 °C) 961 nm 3 Germany & Other Countries Laser , Laser Diodes 976 nm Fiber Detachable Laser Diode BLD-98-tt-3W-14-C BLD-98-tt-7W-14-C BLD-98-tt-10W-14-C High Power Laser Diode Modules are manufactured by adopting specialized , quality. The products are achieved by transforming the asymmetric radiation from the laser diode chip , info@lasercomponents.fr www.lasercomponents.fr Laser Diodes 976 nm Fiber Detachable Laser Diode Symbol Unit Laser Components
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Abstract: ) Intensity (arb.) Typ. Spectrum of 976 nm Laser Diode (T=25 °C) 961 nm 3 Germany & Other Countries , -98-tt-3W-16-F-f-c-l-D BLD-98-tt-7W-16-F-f-c-l-D BLD-98-tt-10W-16-F-f-c-l-D High Power Laser Diode Modules are , radiation from the laser diode chip into an output fiber with small core diameter by using special micro , lt A Max. voltage Vt V 9.8 Thermistor Rt (KO)/β(25°C) 10±5%/3477 , 400 500 600 7 3.0 2.5 2.0 1.5 1.0 6 5 4 3 2 0.5 0.0 0 1 0.0 0.5 Laser Components
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diode t25 4 F0

Abstract: DIODE T25 4 ko ]. 240° C< 1 ) Input Diode Power Dissipation , . 300mW(4 > Voltage at Output Lead (Open Collector V Diode Forward D.C. Current. 40 mA Diode Reverse D.C. Voltage , soldering. (2) Derate linearly 2.22 mW/° C above 25° C. (3) Derate linearly 4.44 mW/° C above 25° C. (4
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diode t25 4 F0 OPB930L QPB940L OPB93 OPB94 0PB93Q PB931
Abstract: Input Diode Current (l,K) V, < -0.5V Source Current (JEDEC Method 17) -20 mA V, > Vcc + 0.5V , -0.5V to Vcc +0.5V DC Output Diode Current (lOK) VQ < -0.5V -2 0 mA V0 Vcc + 0.5V +20 mA , Operating Temperature (TA) ±12.5 mA -4 0 â'˜C to +85â'˜C Input Rise and Fall Time (tr/tf) DC , High Level Input Voltage 4 .5 -5 .5 V,L Low Level Input Voltage High Level Output Voltage T a = -4 0 *C to +85'C Typ 4.S -5.5 VOH NC7ST86 T a = +25*C < < o NC7ST86 -
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MM74HCT NC7ST86M5 MA05B NC7ST86M5X US0121

RCA-CA3127

Abstract: rca 0190 transistor diode. The substrate (terminal 5) must be connected to the most negative point in the external circuit , , lE =0 20 60 - V Emitter-to-Base Breakdown Voltage* lE = 10 MA, IQ = 0 4 5.7 - V Col , VC| = 6V,f = 1 MHz - Fig- - pF Emltter-to-Base Capacitance VBE = 4 V, f= 1 MHz - 5 - pF Voltage Gain VCE = 6 V, f = 10 MHz RL= 1 kO, lc= 1 mA - 28 - dB Power Gain Cascode Configuration f = 100 MHz , . 4 â'" Gain-bandwidth product as a function of collector current. Fig. 3 â'" 1/f noise figure as a
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CA3127 RCA-CA3127 rca 0190 transistor iY22 rca 0190 currentmirror TA6206 92CS-222I4 2C5-Z2229 100-MH
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