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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

DIODE T25 4 ko

Catalog Datasheet MFG & Type PDF Document Tags

diode t25 4 g0

Abstract: DIODE T25 4 ko the VCO and the phase comparator. 4) The VCO output frequency division can be selected on the SELECT , 3760MHz 1/4 -2075 SSOP-B14 Absolute maximum ratings (Ta=25) Symbol Supply voltage Input voltage , Power dissipation *1 *2 *3 *4 Operating is not guaranteed. In the case of exceeding Ta = 25, 4.0mW , to "H" and the output frequency is reduced to 1/4, the frequency range and the frequency sensitivity will be all reduced to 1/4. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/18
ROHM
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diode t25 4 g0 DIODE T25 4 ko T-75 High voltage diode figure T-75 DIODE T-75 High voltage diode BU2373FV BU2374FV 11069EBT07 3760MH 3765MH 43100MH

DIODE T25 4 ko

Abstract: diode t25 4 L0  95 - IIS Turn-off Delay Time tdu>ffi Ri =3iJ - 300 - ns Fall Time tf - ]70 - lis Ko , '¢ Low On-Resistance Ros (on) S 0 Q45 Si. Vc 10 V, lD â'" 10 A 4 V, l0- 10 A ftDS (on) £ 0.065 Q, Vr,s â'¢ Capable of 4 V Gate Drive â'¢ Low Drive Current â'¢ High Speed Switching â'¢ High Density , Impulse»' 40 A Cody Drain Diode I IMI 10 A Reverse Drain Current Channel Dissipation Pch(Tc = 25t}" 28 W Channel Dissipation Pel." 4 w Channel Temperature Tch 150 "c Storage Temperature Tstg â
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4AK17 2SK972 2SK1095 SP-10 diode t25 4 L0 n channel fet array

9010J

Abstract: CE-300 % tSlOO ms Delay Time (If =16 m A , Vc c =5 V, TA=25°C) High - Low SFH6135 (Rl =4. 1 kO) SFH6136 (Rl = 1.9 kQ) Low - High SFH6135 (Rl =4. 1 kO) SFH6136 (Rl = 1.9 kß) tpHL W hl tpHL tfUL 0.3 (£1.5) 0.2 , ission rate and a high isolation resistance. They have a G a A IA s infrared emitting diode, optically co , not allow ed to ex cee d the maximum perm issible reference voltages. 016 (41 ).^ , \rn- 100(2 &4 , n mA Peak Forward
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SFH613 9010J CE-300 CE700 H6136 SFH6135/6136

DIODE T25 4 EO

Abstract: DIODE T25 4 bo pack envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control , inductive loads. PINNING -SOT199 BUK627-500B PowerMOS transistor Fast recovery diode FET 5bE D â , 0.8 Ã2 resistance V Diode reverse recovery time 250 ns PIN CONFIGURATION SYMBOL PIN , . UNIT VDS Drain-source voltage - - 500 V Vdgr Drain-gate voltage Rqs = 20 kO - 500 V ±Vqs , transistor BUK627-500B Fast recovery diode FET PHILIPS INTERNATIONAL 5bE ]> â  711Dfl2h â¡044S0b 004 HPHIN
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DIODE T25 4 EO DIODE T25 4 bo DIODE T25-4-bo diode,FET 71IDA2 T-39-1 T-39-11 0044S10
Abstract: Laser Diodes 808 nm HHL Packaged Laser Diode BLD-81-tt-2W-10-F-f-c-l-22 BLD-81-tt-5W-10-F-f-c-l-22 BLD-81-tt-8W-10-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized , quality. The products are achieved by transforming the asymmetric radiation from the laser diode chip , www.lasercomponents.fr Laser Diodes 808 nm HHL Packaged Laser Diode Symbol Unit BLD , V 9.8 Thermistor Rt (KO)/β(25°C) 10±5%/3477 Operation temperature Top °C Laser Components
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BLD-81-
Abstract: Laser Diodes 660 nm ~ 690 nm HHL Window Packaged Laser Diode BLD-66-10-1W-10-W BLD-68-10-1W-10-W BLD-67-10-1W-10-W BLD-69-10-1W-10-W High Power Laser Diode Modules are manufactured by adopting , diode chip into an output fiber with small core diameter by using special micro optics. Inspecting and , info@lasercomponents.fr www.lasercomponents.fr Laser Diodes 660 nm ~ 690 nm HHL Window Packaged Laser Diode , Vre V 2 Current lmo µA 200 ~ 2000 Max. current lt A 4 Max. voltage Laser Components
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Abstract: lt A 4 Max. voltage Vt V 9.8 Thermistor Rt (KO)/β(25°C) 10±5%/3477 , Laser Diodes 635 nm ~ 650 nm HHL Package Fiber-Coupled Laser Diode BLD-63-05-400-10-F-f-c-l-22 BLD-65-10-400-10-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized , quality. The products are achieved by transforming the asymmetric radiation from the laser diode chip , Package Fiber-Coupled Laser Diode BLD-63-05-400-10-F-f-c-l-22 BLD Laser Components
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BLD-63-05-400-10-F- BLD-65-10-400-10-F-
Abstract: Laser Diodes 976 nm Butterfly Packaged Laser Diode BLD-98-tt-3W-14-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in , by transforming the asymmetric radiation from the laser diode chip into an output fiber with small , Packaged Laser Diode Specifications (25 °C) Unit BLD-98-tt-3W-14-F-10-c-l-22 CW-output power , Thermistor Rt (KO)/β(25°C) 10±5%/3477 Operation temperature Top °C 10 ~ 30 Laser Components
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BLD-98-
Abstract: Laser Diodes 405nm Butterfly Packaged Diode Laser BLD-41-10-100-14-F-6-c-l-22 LASER COMPONENTS High Power Diode Laser Modules are manufactured by adopting specialized fiber-coupling techniques , achieved by transforming the asymmetric radiation from the laser diode chip into an output fiber with , www.lasercomponents.fr Laser Diodes 405nm Butterfly Packaged Diode Laser BLD , (KO)/β(25°C) 10±5%/3477 Operation temperature Top °C 10 ~ 30 Storage temperature Laser Components
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BLD-41-10-100-14-F-6-

DIODE T25 4 k0

Abstract: DIODE T25 4 ko TVS Diode for Proximity Switch Input Protection PROTECTION PRODUCTS - MicroClamp® Description The , Minimum Typical Maximum 33 Units V V T=25 OC T=-40 OC to 125 OC T=25 OC T=125 OC 36 34 45 1 , VF VC Cj VRWM = 33V µA V V pF IF= 200mA IPP = 2A, tp = 1.2/50µs VR = 0V, f = 1MHz T=25 OC T , Voltage -VC (V) 60 75 Voltage (V) 0 1 2 3 Peak Pulse Current - IPP (A) 4 5 50 50 40 25 , Parameters: tr = 8µs; td = 20µs Junction Capacitance vs. Reverse Voltage 30 TA = 25OC f = 1 MHz 4
Semtech
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3601P DIODE T25 4 k0 Diode MARKING t40 SLP1006P2 AEC-Q100

Marking Code m sc70-6

Abstract: jedec SC-70-6 package Components Leader Tape 500mm minimum or 125 empty pockets July 1999, Rev. C m 3HbIìti7l4 Q0fc»2öö4 T25 , continuous, 0.65 A peak. Rdsiom, = 4 à @ VGS= 4.5 V, RDS(ON) = 5 Ã2 ( ! Vâ'žs= 2.7 V. Very low level , . m SC70-6 m S.p."i>OI " I! SO-8 SOT-223 SC70-6 The pinouts are symmetrical; pin 1 and 4 are , 4.5V, Id = 0.22 A 2.6 4 £2 Tj =125°C 5.3 7 VGS = 2.7V, Id = 0.19A 3.7 5 'â¡(ON , - On Rise Time 4.5 10 ns *D(on) Tum - Off Delay Time 4 8 ns t, Tum-Off Fall Time 3.2 7 ns
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Marking Code m sc70-6 jedec SC-70-6 package SPI SC70-6 Marking Code m sc70-6 25 fdg6301n bb sc70-6 FDG6301N MIL-STD-883D RS-481 SC-70

2SK1225

Abstract: 2SK1206 Diode Reverse Drain Current Io. 12 A Channel Dissipation /V 60 W Channel Temperature T 150 °C , Q HITACHI/(OPTOELECTRONICS) ELECTRICAL CHARACTERISTICS (T.=25 °C) 50 100 Case Temperature TL , Capacitance c,â'ž - 2050 - pF Output Capacitance Con VDJ=10V, K^O./slMHz - 720 - PF Reverse Transfer , 85 - ns Turn-off Delay Time t*°m â'" 145 â'" ns Fall Time t, â'" 85 â'" ns Body-Drain Diode Forward Voltage Vor /r=12A, Kc,s=0 - 1.0 - V Body-Drain Diode Reverse Recovery Time L /,= 12A, V(,5=0
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2SK1225 2SK1206 100MA G0132 2SK1225-
Abstract: µClamp3601P TVS Diode for Proximity Switch Input Protection PROTECTION PRODUCTS - MicroClamp , Conditions Minimum T=25 OC 34 Units V 36 T=-40 OC to 125 OC Maximum 33 VRWM , Cj Reverse Breakdown Voltage © 2012 Semtech Corporation VR = 0V, f = 1MHz 45 T=25 OC 1 T=125 OC 5 T=25 OC 25 T=-40 OC to 125 OC 35 2 V µA pF , Current 50 40 50 25 30 0 0 1 2 3 Peak Pulse Current - IPP (A) 4 5 0 Semtech
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DIODE T25 4 ko

Abstract: 2SK1206 ±20 V Drain Current lo 12 A Drain Peak Current I D\puht)* 48 A Body-Drain Diode Reverse Drain Current , ) ELECTRICAL CHARACTERISTICS (T.=25 °C) 50 100 Case Temperature TL (*C ) Item Symbol Test Condition min. typ , VDJ=10V, K^O./slMHz - 720 - PF Reverse Transfer Capacitance c,â'ž - 80 â'" pF Turn-on Delay Time , Time '/ â'" 85 â'" ns Body-Drain Diode Forward Voltage Vor /r=12A, Kc,s=0 - 1.0 - V Body-Drain Diode , / / 0 2 4 6 8 10 G*le-Source VoJuge Vcs (V) DRAIN-SOURCE SATURATION VOLTAGE VS. GATE-SOURCE VOLTAGE I
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40V 12A N-Channel MOS HIV DIODE DIODE T25 4 lo

nas77

Abstract: BTW63-600R operation in fast power inverters. For reverse-blocking operation use with a series diode, for reverse-conducting operation use with an anti-parallel diode. QUICK REFERENCE DATA BTW63-600R 800R 1000R , Repetitive peak on-state current 'TRIM max. 250 A Circuit-commutated turn-off time suffix K < 4 /us suffix N tq < 6 jUS MECHANICAL DATA Fig. 1 TO-48 2.0_ min î4inx28UNF ._\ . r 2.9min i12.4 , washer); 56264b (insulating bush). Dimensions in mm K.O M0171 Supplied with device: T nut, 1 lock
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BTW63 IEC134 nas77 56264a 600R 800R 28UNF M28S0 T-05- M0152
Abstract: .) Typ. Spectrum of 976 nm diode laser (T=25 °C) 961 nm 3 Germany & Other Countries Laser , Laser Diodes 976 nm Fiber Detachable Laser Diode BLD-98-tt-3W-14-C BLD-98-tt-7W-14-C BLD-98-tt-10W-14-C High Power Laser Diode Modules are manufactured by adopting specialized , quality. The products are achieved by transforming the asymmetric radiation from the laser diode chip , info@lasercomponents.fr www.lasercomponents.fr Laser Diodes 976 nm Fiber Detachable Laser Diode Symbol Unit Laser Components
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Abstract: ) Intensity (arb.) Typ. Spectrum of 976 nm Laser Diode (T=25 °C) 961 nm 3 Germany & Other Countries , -98-tt-3W-16-F-f-c-l-D BLD-98-tt-7W-16-F-f-c-l-D BLD-98-tt-10W-16-F-f-c-l-D High Power Laser Diode Modules are , radiation from the laser diode chip into an output fiber with small core diameter by using special micro , lt A Max. voltage Vt V 9.8 Thermistor Rt (KO)/β(25°C) 10±5%/3477 , 400 500 600 7 3.0 2.5 2.0 1.5 1.0 6 5 4 3 2 0.5 0.0 0 1 0.0 0.5 Laser Components
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diode t25 4 F0

Abstract: DIODE T25 4 ko ]. 240° C< 1 ) Input Diode Power Dissipation , . 300mW(4 > Voltage at Output Lead (Open Collector V Diode Forward D.C. Current. 40 mA Diode Reverse D.C. Voltage , soldering. (2) Derate linearly 2.22 mW/° C above 25° C. (3) Derate linearly 4.44 mW/° C above 25° C. (4
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diode t25 4 F0 OPB930L QPB940L OPB93 OPB94 0PB93Q PB931
Abstract: Input Diode Current (l,K) V, < -0.5V Source Current (JEDEC Method 17) -20 mA V, > Vcc + 0.5V , -0.5V to Vcc +0.5V DC Output Diode Current (lOK) VQ < -0.5V -2 0 mA V0 Vcc + 0.5V +20 mA , Operating Temperature (TA) ±12.5 mA -4 0 â'˜C to +85â'˜C Input Rise and Fall Time (tr/tf) DC , High Level Input Voltage 4 .5 -5 .5 V,L Low Level Input Voltage High Level Output Voltage T a = -4 0 *C to +85'C Typ 4.S -5.5 VOH NC7ST86 T a = +25*C < < o NC7ST86 -
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MM74HCT NC7ST86M5 MA05B NC7ST86M5X US0121

RCA-CA3127

Abstract: rca 0190 transistor diode. The substrate (terminal 5) must be connected to the most negative point in the external circuit , , lE =0 20 60 - V Emitter-to-Base Breakdown Voltage* lE = 10 MA, IQ = 0 4 5.7 - V Col , VC| = 6V,f = 1 MHz - Fig- - pF Emltter-to-Base Capacitance VBE = 4 V, f= 1 MHz - 5 - pF Voltage Gain VCE = 6 V, f = 10 MHz RL= 1 kO, lc= 1 mA - 28 - dB Power Gain Cascode Configuration f = 100 MHz , . 4 â'" Gain-bandwidth product as a function of collector current. Fig. 3 â'" 1/f noise figure as a
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CA3127 RCA-CA3127 rca 0190 transistor iY22 rca 0190 currentmirror TA6206 92CS-222I4 2C5-Z2229 100-MH
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