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Part Manufacturer Description Datasheet BUY
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

DIODE GE

Catalog Datasheet MFG & Type PDF Document Tags

1N2326

Abstract: 1N232 , Dnc, I/ »_/ TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1N2326 COMPENSATING DIODE Ge alloy-junction type used in temperature- and voltagecompensation applications, ' JEDEC TO-1 MAXIMUM RATINGS Reverse Voltage , Pt»k Recurrent Current DC Forward Current . . Temperature Range: Operating (Ti) and Storage (Tito) Lead-Soldering Temperature (10 s max) TL CHARACTERISTICS DC Forward Voltage Drop
New Jersey Semiconductor
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1N232

b310 diode

Abstract: B310 SDB 0WAU B310 U SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely low forward vo w oltage reduc conduc ces ctions. Minia ature surface moun package i excellent , Pi inning Inf formation n Pin Descr ription 1 Cathode (Diode 1) 2 Cathode (Diode
AUK
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SDB310WAU b310 diode B310 SDB31 10WAU AUG-10 SD-D5D015-0 25-AUG-10

DIODE GE

Abstract: KSD-D5D017-001 SDB B310W U WMU SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely , Pi inning Inf formation n Pin Descr ription 1 Anode (Diode 1) 2 Cathode (Diode 2) 3 Cathode (Diode 1), Anode (Diode 2) v. AUG-10 Rev date: 25-A Simplified Outline S
AUK
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SDB310WMU KSD-D5D017-001 DIODE GE SD-D5D017-0

DIODE GE

Abstract: D SCHOT SDB B310WKU U SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely low forward vo w oltage reduc conduc ces ctions. Minia ature surface moun package i excellent , Pi inning Inf formation n Pin Descr ription 1 Anode (Diode 1) 2 Anode (Diode 2
AUK
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SDB310WKU D SCHOT MARKIN CODE 10WKU SD-D5D016-0 KSD-D5D016-001
Abstract: SDB 0WAU B310 U SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely , Week Co Markin ode ng Pi inning Inf formation n Pin Descr ription 1 Cathode (Diode 1) 2 Cathode (Diode 2) 3 Common Anode v. AUG-10 Rev dat e: 25-A Simplified Outline S AUK
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KSD-D5D015-001
Abstract: SDB B310W U WMU SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely , Markin ode ng Pi inning Inf formation n Pin Descr ription 1 Anode (Diode 1) 2 Cathode (Diode 2) 3 Cathode (Diode 1), Anode (Diode 2) v. AUG-10 Rev dat e: 25-A Simplified AUK
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Abstract: SDB B310WKU U SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely , Week Co Markin ode ng Pi inning Inf formation n Pin Descr ription 1 Anode (Diode 1) 2 Anode (Diode 2) 3 Common Cathode n v. AUG-10 Rev dat e: 25-A Simplified Outline AUK
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JIS audio connector

Abstract: square connector : 1.0 Vp - p 75 Audio : 0.7 Vrms 10 k Digital : TTL LD ( Laser Diode ) Ge · APD SMF 10 / 125 Pulse , Analog Digital Link for Single Mode Silica Glass Fiber Cable ENMM1 (For Video, Audio and Digital Transmission) Part No.: ENQM11130 (Transmitter) ENQM11228 (Receiver) Type: Features · Used laser diode and single mode fiber, possible to transmit to 35 km · Simultaneous transmission of 1 ch. video, 2 ch. · audio and 1 ch. data signals Realized to constant optical power due to Auto Power Control
Panasonic
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JIS audio connector square connector ENQ35

NTE116 cross reference

Abstract: NTE135A devices. Contains 138 pieces total. Pkg. Qty. Crosses NTE109 Type Diode, Ge, General Purpose 100 PRV DO7 5 3129 NTE116 Diode, Si, 600 PRV, 1.0A DO41 10 9923 NTE123AP Transistor, NPN, Si, Audio Amp, Switch TO92 5 3358 NTE125 Diode, Si, 1000 PRV , . All devices provided in these kits are also available separately. Type NTEKCOM1 transistor/diode , 64 NTE519 Diode, Si, Ultra Fast Switch, 100 PRV DO35 5 1750 NTE558 Rectifier, Si
NTE Electronics
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NTE2396 NTE5127A NTE116 cross reference NTE135A transistor power 2 Amp rectifier diode NTE128P NTE129P NTE156 NTE159 NTE261 NTE262

tsf1303

Abstract: sanyo tsf1203 (,) () (1) (2) + IN Ge diode Ge diode + OUT 47F 10k 100k 0.022F OUT IN Ge diode 100k 0.022F No.2927-10/12 LA7555 [JAPAN] VCC VCC Video Out VCO AFT Out
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TSF1212 tsf1303 sanyo tsf1203 tsf1203 GE DIODE sanyo TSF1303 mitsumi tuner N2927 LA7555PLLVIF IC920 PLLDIP24 TSF1110

DCR504

Abstract: DCR504ST DS2906SZ ­ 0.015914444 0.11368224 8.04212 x 10­ 5 ­ 0.002839595 Table 3 List of diode GE VFM , needed which approximates better to the true curve. A FOUR COEFFICIENT MODEL The GE four term , 5.286579 x 10­ 5 0.01334724 Table 2 List of thyristor GE VTM coefficients 3/5 www.dynexsemi.com
Dynex
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DCR504 DCR504ST DCR604SE DCR720E DCR803SG DCR806SG AN5001 AN5001-4 AN5001-5

DIODE GE

Abstract: GE brand thyristor ­ 0.005435085 DS2103SY / DS2103SV Table 3 List of diode GE VFM coefficients 4/5 , needed which approximates better to the true curve. A FOUR COEFFICIENT MODEL The GE four term , 0.8497627 ­ 0.03614853 1.947584 x 10 5.286579 x 10 Table 2 List of thyristor GE VTM coefficients
Dynex
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GE brand thyristor DCR504S thyristor Vtm 6.5 DCR818SG DCR820SG DCR803 AN5001-6 AN5001-7

bd7995

Abstract: P8243 Diode, si Transistor, si npn Diode, zener Diode, si Diode, si Diode, si Diode, ge Diode, zener , I )iode, ge V5 I )iode, zener V9.12, Diode, varicap 15.1(1,14 I )mde, zener V22 V36.S0 n.;». , sisto r, carbon R50,51 R e sisto r, carbon VI Diode, zener V2.6.10. .13 Diode, si Transistor, si npn , . R33.36 Resisto r, R37 Resisto r, R38 Resisto r, R41.42 Resisto r, S I,2 VI Link Diode, si carbon , 1579 1477 1044 1362 1491 0564 212( 2122 2117 2240 Transistor, si V1.6.9, 12,20,24,26,30 Diode
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OCR Scan
bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 sk 7443 8366IT STR910A B26000 B26050 EC005 B26010

1N5411

Abstract: DIODE GE Semi CentralSemi Diode Trans GE Solid St Hi-Tron Semi Inc Sid St DYcs Solid Stlnc Swampscott UPI Semi , CentralSemi Diode Trans GE Solid St Hi-Tron Semi Inc Sid St DYcs Solid Stlnc Swampscott UPI Semi Advncd Semi , CentralSemi GE Solid St Hi·Tron Semi Inc Sid St DYcs Solid Stlnc Swampscott Advncd Semi CentralSemi Diode Trans GE Solid St Hi-Tron Semi Inc SldSt Indus Space Power UPI Semi Advncd Semi CentralSemi Diode Trans , Semitronics SldSt Indus Space Power Manufacturer UPI Semi Advncd Semi CentralSemi Diode Trans GE Solid St
Space Power Electronics
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1N5411 1N5758 1N5759 1N5760 1N5761 103717 germanium 1N3299 1N3300 1N3300A 1N3301 1N3302 1N3302A

IRGP30B120KD-EP

Abstract: ir igbt 1200V 40A CE (V) - 40°C 25°C 125°C 55 V GE = 15V 50 2 Fig.8 - Typical Diode Forward , dI F /dt Fig.20 - Typical Diode Q RR V CC =600V; V GE =15V V CC =600V; V GE =15V; Tj , ULTRAFAST SOFT RECOVERY DIODE C Features · Low VCE(on) Non Punch Through (NPT) Technology · Low Diode VF (1.76V Typical @ 25A & 25°C) · 10 µs Short Circuit Capability · Square RBSOA · Ultrasoft Diode , .1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode
International Rectifier
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IRGP30B120KD-EP IRGP30B120KD-E ir igbt 1200V 40A 035H

600V 25A Ultrafast Diode

Abstract: PW80 ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V · Low VCE(on) Non Punch Through (NPT) Technology · Low Diode VF (1.76V Typical @ 25A & 25°C) · 10 s Short Circuit Capability · Square RBSOA · Ultrasoft Diode Recovery Characteristics · Positive VCE(on) Temperature Coefficient · Extended Lead TO , .3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode Continuous Forward Current Diode , Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient
International Rectifier
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600V 25A Ultrafast Diode PW80 diode I-35 L wf320 irgp30b120 GE power diode

035H

Abstract: IRGP30B120KD-E CE (V) - 40°C 25°C 125°C 55 V GE = 15V 50 2 Fig.8 - Typical Diode Forward , dI F /dt Fig.20 - Typical Diode Q RR V CC =600V; V GE =15V V CC =600V; V GE =15V; Tj , ULTRAFAST SOFT RECOVERY DIODE C Features · Low VCE(on) Non Punch Through (NPT) Technology · Low Diode VF (1.76V Typical @ 25A & 25°C) · 10 µs Short Circuit Capability · Square RBSOA · Ultrasoft Diode , .1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode
International Rectifier
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Abstract: ) - 40°C 25°C 125°C 55 V GE = 15V 50 2 Fig.8 - Typical Diode Forward , Typical Diode I RR vs dI F /dt Fig.20 - Typical Diode Q RR V CC =600V; V GE =15V V CC =600V; V GE , ULTRAFAST SOFT RECOVERY DIODE C Features â'¢ Low VCE(on) Non Punch Through (NPT) Technology â'¢ Low Diode VF (1.76V Typical @ 25A & 25° C) â'¢ 10 µs Short Circuit Capability â'¢ Square RBSOA â'¢ Ultrasoft Diode Recovery Characteristics â'¢ Positive VCE(on) Temperature Coefficient â'¢ Extended Lead TO International Rectifier
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Abstract: PART IGBT/DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited , CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) G-E , BRAKE PART IGBT/DIODE Symbol Item Conditions Rating Unit V CES Collector-emitter voltage G-E short-circuited 1200 V V GES Gate-emitter voltage C-E short-circuited  , voltage G-E short-circuited 425 I FRM Forward current W 1200 (Note2) IF A Mitsubishi
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CM100RX-24S UL1557 E323585
Abstract: G-E short-circuited UP / UN DIODE R IF IE GWN N1 Es V V W GVN GVP-V , , GUN-Es, GWP-W, GWN-Es, GB-Es G-E short-circuited VP / VN DIODE N1 N GUP-U, GUN-Es , ) V GE =15 V CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip , ABSOLUTE MAXIMUM RATINGS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited 1200 V V GES Mitsubishi
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CM50MXA-24S
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