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Part Manufacturer Description Datasheet BUY
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

DIODE D27

Catalog Datasheet MFG & Type PDF Document Tags

ac power adapter for notebook schematic

Abstract: DIODE D27 dampen ringing across output diode D27. Filtering of the rectified output is provided by C52, C50, L9 , 5 mm) D27 V60100C C63 68 F 400V 8 R72 100 1% R65 2M R93 150 R62 150 D24
Power Integrations
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ac power adapter for notebook schematic DIODE D27 TOP261LN pc357a power adapter for notebook schematic top261 DI-196

86A-5163

Abstract: PWM controller for ZVS half-bridge Vcc voltage between 14 V and 13.5 V. Diode D27 brings the PFC_OK pin voltage over 2.5 V, so the L6563 , diode - 2% Vishay D26 STPS1L60A SMD Schottky diode STMicroelectronics D27 LL4148 , inductor L2, MOSFET Q1, diode D4 and capacitor C9. The PFC circuit is quite standard and already well , bootstrap diode and all the functions and protections tailored for this topology. The device is housed in , R46 100K Q1 R19 56K STP12NM50FP R23 0R47 + R99 15K C48 6.8NF D27 LL4148
STMicroelectronics
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86A-5163 PWM controller for ZVS half-bridge optocoupler PC817 l6591 PC817 optocoupler AHB ZVS AN2852 EVL6591-90WADP L6591 AM01816

smps circuit diagram

Abstract: DIODE D28 the diodes D26 and D27. The diode D27 is necessary to transform the AC current through the capacitor , second modification is the replacement of the resistor R26 by 2 antiparallel diodes D27 and D28. Fig , further by replacing the resistor R26 by 2 antiparallel diodes D27 and D28. Now the voltage at the small capacitor C27 can change by double the value of one forward voltage of a diode, that is at least 1 V in , flows through the diodes D27 and D28 and for the burst frequency only the small capacitor C27 counts
Infineon Technologies
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ICE1QS01 ICE1QS01G smps circuit diagram DIODE D28 ICE1QS01 equivalent AN-ICE1QS01 diode d62 Q67040-S4558-A101 Q67040-S4559-A101

SMPS CIRCUIT DIAGRAM

Abstract: 4N60S5 that the rectifier diode is only forward biased by the AC line voltage being higher than the voltage , a diode D, a resistor R, and a capacitor C. This snubber circuit cuts off the voltage overshoots at , inductor L, a diode D and a capacitor C. Fig. 8 shows the charge pump circuit which is connected between , switching transistor T. The bridge rectifier replaces the diode D1 in Fig. 6. The inductor L is put in to , Lp, at the beginning of the transformer demagnetization period with a conducting diode D. This
Infineon Technologies
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4N60S5 TDA 3612 DIODE D29 sem 2106 inverter diagram sem 2106 inverter TDA 16846 1684X Q67000-A9377 P-DIP-14-3 Q67000-A9378 16846G Q67006-A9430

33cn10n

Abstract: DIODE D27 E AS I D=27 A, R GS=25 47 mJ Reverse diode dv /dt dv /dt I D=27 A, V DS=80 V, di , 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A, (TO252) - 25 33 m V GS=10 V, I D=27 A, (TO251) - 25 33 V GS=10 V, I D=27 A, (TO263) - 25 35 V GS=10 V, I D=27 A, (TO220, TO262) - 26 35 - 1 - 15 30 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=27 A 4
Infineon Technologies
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IPD33CN10N IPP35CN10N 35CN10N 33cn10n D27D27 d804 IPB35CN10N IPI35CN10N IPU33CN10N PG-TO263-3

DIODE D27

Abstract: 2SC3115-TBD27 drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power , ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=27 A, R GS=25 I D=27 A , (on) V GS=20 V, V DS=0 V V GS=10 V, I D=27 A, (TO252) V GS=10 V, I D=27 A, (TO251) V GS=10 V, I D=27 A, (TO263) V GS=10 V, I D=27 A, (TO220, TO262) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=27 A 100 2 3 0.1 4 1 µA V - 10 1 25 100 100 33 nA m - 25 33 - 25
Infineon Technologies
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2SC3115-TBD27 PG-TO252-3 PG-TO262-3 PG-TO220-3 PG-TO251-3 J-STD20 JESD22

400N06N

Abstract: D27D27 Pulsed drain current I D,pulse T C=25 °C1) 108 Avalanche energy, single pulse E AS I D=27 A, R GS=25 80 mJ Reverse diode dv /dt dv /dt I D=27 A, V DS=20 V, di /dt =200 A/µs , D=27 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward , Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A - 31 40 m Gate resistance , , I D=27 A 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm
Infineon Technologies
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400N06N IPD400N06N
Abstract: pulse E AS I D=27 A, R GS=25 â"¦ 80 mJ Reverse diode dv /dt dv /dt I D=27 A, V DS , 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A - 31 40 , S |V DS|>2|I D|R DS(on)max, I D=27 A 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 , V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=27 A, R G=22 â"¦ pF ns Gate Charge Characteristics 3) V DD=30 V, I D=27 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Infineon Technologies
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33CN10N

Abstract: D27D27 ,pulse E AS V GS P tot T j, T stg T C=25 °C I D=27 A, R GS=25 mJ V W °C T C=25 °C 58 -55 . , on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=27 A, (TO252) V GS=10 V, I D=27 A, (TO251) V GS=10 V, I D=27 A, (TO263) V GS=10 V, I D=27 A, (TO220, TO262) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=27 A 100 2 3 0.1 4 1 µA V - 10 1 25 100 100 33 nA m , Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time
Infineon Technologies
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33cn10 IPB34CN10N 34CN10N

33CN10N

Abstract: 33cn10 =25 °C 108 Avalanche energy, single pulse E AS I D=27 A, R GS=25 47 mJ Gate source , Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A, (TO252) - 25 33 m V GS=10 V, I D=27 A, (TO251) - 25 33 V GS=10 V, I D=27 A, (TO263) - 25 34 V GS=10 V, I D=27 A, (TO220, TO262) - 26 35 - 1 - 15 30 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=27 A 4) 2 Device on 40
Infineon Technologies
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IPD33CN to262 pcb footprint 34cn 35CN10
Abstract: Characteristics5) V DD=50 V, I D=27 A, V GS=0 to 10 V V DD=50 V, V GS=0 V nC V Reverse Diode Diode , E AS I D=27 A, R GS=25 W 47 mJ Gate source voltage3) V GS ±20 V Power , Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A, (TO252) - 25 33 mW V GS=10 V, I D=27 A, (TO251) - 25 33 V GS=10 V, I D=27 A, (TO263) - 25 34 V GS=10 V, I D=27 A, (TO220, TO262) - 26 35 - 1 - W 15 30 - S Gate Infineon Technologies
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IEC61249-2-21

33CN10N

Abstract: IPB34CN10N G Pulsed drain current2) I D,pulse T C=25 °C 108 Avalanche energy, single pulse E AS I D=27 , Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A, (TO252) - 25 33 m V GS=10 V, I D=27 A, (TO251) - 25 33 V GS=10 V, I D=27 A, (TO263) - 25 34 V GS=10 V, I D=27 A, (TO220, TO262) - 26 35 - 1 - 15 30 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=27 A 4) 2 Device on 40
Infineon Technologies
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IPB34CN10N G

400n06n

Abstract: DIODE D27 Pulsed drain current I D,pulse T C=25 °C1) 108 Avalanche energy, single pulse E AS I D=27 A, R GS=25 80 mJ Reverse diode dv /dt dv /dt I D=27 A, V DS=20 V, di /dt =200 A/µs , D=27 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward , Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A - 31 40 m Gate resistance , , I D=27 A 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm
Infineon Technologies
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400n06

34cn

Abstract: 33CN10N =25 °C 108 Avalanche energy, single pulse E AS I D=27 A, R GS=25 47 mJ Gate source , Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A, (TO252) - 25 33 m V GS=10 V, I D=27 A, (TO251) - 25 33 V GS=10 V, I D=27 A, (TO263) - 25 34 V GS=10 V, I D=27 A, (TO220, TO262) - 26 35 - 1 - 15 30 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=27 A 4) 2 Device on 40
Infineon Technologies
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400N06N

Abstract: 400N06 =25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source , ) Value 27 19 108 80 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C1) I D=27 A, R GS=25 I D=27 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C , on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=27 A V GS=20 V, V DS=0 V V GS=10 V, I D=27 A 60 2 3 0.01 4 1 µA V 2.2 75 50 K/W Values typ. max. Unit
Infineon Technologies
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F27AT

260N06N

Abstract: PG-TO220-3 Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A - 21.8 26 m V GS=10 V, I D=27 , Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=27 A 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy , =30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=27 A, R G=3 pF ns Gate Charge Characteristics 5) V DD=30 V, I D=27 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg , - 29 - nC V DD=30 V, V GS=0 V V Reverse Diode Diode continous forward current
Infineon Technologies
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IPP260N06N3 260N06N IPB260N06N3

260N06N

Abstract: DIODE D27 GS=10 V, I D=27 A - 21.8 26 m V GS=10 V, I D=27 A, (SMD) - 21.5 25.7 - , D|R DS(on)max, I D=27 A 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one , MHz V DD=30 V, V GS=10 V, I D=27 A, R G=3 pF ns Gate Charge Characteristics 5) V DD=30 V, I D=27 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 11 , - nC V DD=30 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode
Infineon Technologies
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20TP

S127

Abstract: Clamp SW1 CCD ANALOG SHIFT REGISTER (EVEN) SHIFT GATE SH0 PHOTO DIODE (Black & White) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 13 SH0 SHIFT GATE SH0 Clamp SW1 PHOTO DIODE (blue) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 CCD ANALOG SHIFT REGISTER (ODD) SHIFT GATE SH1 SW2 OS1 21 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (green) S7498 S7499 , D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (red) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1
Toshiba
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S127 TCD2704D

IC-547

Abstract: ANALOG SHIFT REGISTER (EVEN) SHIFT GATE SH0 PHOTO DIODE (Black & White) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 13 SH0 SHIFT GATE SH0 Clamp SW1 PHOTO DIODE (blue) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 CCD ANALOG SHIFT REGISTER (ODD) SHIFT GATE SH1 SW2 OS1 21 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (green) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 12 SH1 14 1A1 15 2A1 SHIFT GATE SH2 SW2 OS2 22 Clamp D26 D27 D28 CCD
Toshiba
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IC-547

S5339

Abstract: S2607 (EVEN) SW1 13 SH0 148 D149 PHOTO DIODE (Black & White) S5338 S5339 S5340 D128 D125 D126 D127 S1 S2 D26 D27 D28 SHIFT GATE SH0 SHIFT GATE SH0 Clamp CCD ANALOG SHIFT REGISTER (ODD) 148 D149 PHOTO DIODE (blue) S5338 S5339 S5340 D128 D125 D126 D127 S1 S2 D26 D27 D28 SW1 12 SH1 SHIFT GATE SH1 SW2 14 1A1 15 2A1 148 D149 PHOTO DIODE (green) S5338 S5339 S5340 D128 CCD ANALOG SHIFT REGISTER D26 D27 D28 Clamp D125 D126
Toshiba
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TCD2561D S2607 S2618 S2609 D146 CM500S D125
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