500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

DIODE BZV

Catalog Datasheet MFG & Type PDF Document Tags

DIODE BZV

Abstract: atj200 Silicon power Zener/suppressor diode BZV 61 / BZV 62 FEATURES · Z-voltage 19 V - 39 V · , APPLICATIONS · Power supplies · Suppresor diode in car generators · Rectifier diode in car generators with suppressor character PIN CONNECTIONS BZV 61 1 - Cathode Case - Anode BZV 62 1 - Anode Case - , Sfll BZV 61 / BZV 62 Parameter Repetitive peak forward current Effective forward current Junction , - 1.1 1.2 1.0 - 0.8 - Devices are identified by type. Colour of marking : BZV 61
-
OCR Scan

BZV38

Abstract: manual voltage stabilizer TCA750 J V _ m u l t i - s t a b il iz e r f o r e l e c t r o n ic t u n in g T 'ne TCA750 basically a stabilizer for use in electronic tuning systems. The circuit is combined with | reference diode which entirely determines the thermal stability of the system and can be 6 > ted to the stability requirements of A M , FM or T V receivers, re fe re n c e diode BZV 3 8 used in , and RP. [fa higher level is required from the output of stabilizer 1, the reference diode supply may
-
OCR Scan
BZV38 manual voltage stabilizer tca750q CA750 vl160 stabilizer

DIODE BZV

Abstract: zener diode 1n o THOMSON-CSF temperature compensated zener diode diodes zener compensées en température , 4784 A 8,5 100 1 -55 -55 25 25 25 25 75 75 75 100 75 100 250 mW / Tamb = 50°C IN 935 / BZV 32 1 N 936 / BZV 33 1 N 937 / BZV 34 1 N 938 / BZV 35 1N 939 / BZV 36 IN 935 A / BZV 32 A 1N 936 A / BZV 33 A 1N 937 A / BZV 34 A IN 938 A / BZV 35 A 1N 939 A / BZV 36 A 1 N 935 B / BZV 32 B 1 N 936 B / BZV 33 B 1 N 937 B / BZV 34 B 1N 938 B / BZV 35 B 1N 939 B / BZV 36 B 9 20 7,5
-
OCR Scan
ICB-26I DIODE BZV zener diode 1n 939 diode 33b1 939B diode in 4775

CI 4583

Abstract: CI 4584 temperature compensated zener diode diodes zener compensées en température TVIOMSON-CSF , ) ocvZ max (10-5/°C) Case 250 mW / Tamb = 50°C i BZV43 C BZV 44 C BZV 45 C 6,2 20 5 0 25 100 , 821 / BZV 27 1N 823 / BZV 28 1N 825 / BZV 29 1N827 / BZV 30 1N 829 / BZV 31 6,2 15 7,5 -55 0 25 75 100 96 48 19 9 5 10 5 2 1 0,5 1N821 A / BZV 27 A 1N 823 A / BZV 28 A 1N 825 A / BZV 29 A 1N 827 A / BZV 30 A 1N 829 A / BZV 31 A 6,2 10 7,5 -55 0 25 75 100 96 48 19 9 5 10 5 2 1 0,5 400 mW / Tamb = = 50Â
-
OCR Scan
1N3498 CI 4583 CI 4584 ci 4565 zener diode 1N 48 DIODe ZENER 1n 4570 CB-102 DO-35 CB-261

DIODE BZV

Abstract: symboles diodes S G S-THÛMSON 1 Sic D â  7^237. â¡â¡â¡E?3cì b O THOMSON-CSF DIVISION SEMICC_ BZV 53 A, B, BZV 54 A, B . 59C 02739 D 07 TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES DIODES , hybrid microcircuits. Diode de référence de tension Epi-Z (B) destinées aux microcircuits hybrides , mA bzv 53 b bzv 53 A 6,4 v @ 0,5 mA bzv 54 b bzv 54 A TO-236 (CB-166) Plastic package Boîtier , BZV 53 A BZV 63 B BZV 54 A BZV 54 B Marking Marquage DA6 DA7 DA8 DA9 Pin out Brochage
-
OCR Scan
symboles diodes BZV54B DA9 diode Thomson-CSF diodes Q0DH740 BZV53

rectifier diode pressfit

Abstract: hermetic press-fit diode Silicon power Zener/suppressor diode FEATURES · Z-voltage 20 V - 39 V · Z-current up to 42.5 A · , APPLICATIONS · Power supplies · Suppresor diode in car generators · Rectifier diode in car generators with suppressor character BZV 61/BZV62 L " '.»-is A : Touch a"sa tor press-In fcroa PIN CONNECTIONS BZV 61 BZV 62 1 - Cathode 1 - Anode Case- Anode Case - Cathode A BSO LU TE M A X IM U M R A TIN GS , Page 20 BZV 61/BZV62 Parameter Maximum rated value Symbol Ji2dt 1800 1250 Repetitive peak forward
-
OCR Scan
rectifier diode pressfit hermetic press-fit diode diode 3039 10MSA 15-1000H BZV61/20 BZV62/20 BZV61/22 BZV62/22 BZV61/24

diode zener 8v2

Abstract: DIODE BZV BZV 58 C 8V2.C 200 (5 W) Silicon-Power-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung , 0RD BZV 58 C 8V2.C 200 (5 W) Type Typ Zener volt.2) Arbeitsspg.2) Iz ^Ztest u z [V , ] Temp.Coeffiz. of Z-voltage der Z-spanng. O v z lO -T C ] Reverse volt. Sperrspanng. IR= 1 nA UR[V) BZV , per 7"-reel Stück pro 7"-Rolle Diode MiniMelf 0 1.6x3.5 8 4 10000 5000 Diode Melf 0 2.5x5 12 4 5000 , aus Poly styrol mit geschweißten Deckbändern geliefert. (alle Maße in [mm]) Diode Fiatpack 3.7 x 5.4 x
-
OCR Scan
diode zener 8v2 ZENER DIODES BZV 85 8V2 UL94V-0 D0-201 G0DD173 R0D1RS14 DGG174 000017S
Abstract: ^7# rz 7 SCS-THOMSON SYMMETRICAL ZENER DIODE (PROTECTION) B D E S C R IP T IO N BZV 37 is a dual diode, specially designed for ESD protection. A B S O L U T E R A T IN G S (limiting values) Symbol Ptot Pp Pow er D issipation* Non R epetitive S urge Peak Power P aram eter T amb -50°C T p = 10 0 |iS R ectangular W aveform 8 - 2 0 n s expo 1 0 -1 000 n s expo V alue 0.5 40 Unit W , BZV 37 EL E C T R IC A L C H A R A C T E R IS T IC S Symbol VZT V cl Test Conditions T amb = 25 -
OCR Scan
Abstract: SbE D â  7T2T237 0G41Sb4 761 â  SGTH SGS-THOMSON r-n-il lLIO T@ iD(gS BZV 37 S G S-TH0HS0N SYMMETRICAL ZENER DIODE (PROTECTION) DO 35 (Glass) D E S C R IP T IO N BZV 37 is a dual diode, specially designed for ESD protection. A B S O L U T E R A T IN G S (limiting values) Value Unit Ptot Power Dissipation* Tamb - 50°C 0.5 w Pp Non Repetitive Surge Peak Power Tp = 100ns Rectangular Waveform 40 w Ipp Peak Pulse Current -
OCR Scan
0G41S

zener diode IN 825

Abstract: 1N4566 CT SGS-THOMSON M»iLl(3Â¥[SM0(gS GENERAL PURPOSE & INDUSTRIAL ZENER DIODES SYMMETRICAL ZENER DIODE Type Vzt"zt â'¢ZT rZT ' 'ZT V(CL) @ Ipp V(CL) @ Ipp iR'Vfl C typ Package vR = o (V) 1 ms expo. 8-20 ¡is expo. F = 1 MHz min. max.
-
OCR Scan
1N823 1N825 1N829 1N4566 1N3157 zener diode IN 825 4565 4577 4569
Abstract: N AMER PHILIPS/DISCRETE bbS3T31 D D 2 b 7 m 6S1 bRE D IAPX BZV80 BZV81 VOLTAGE REFERENCE DIODES FOR SURFACE MOUNTING Voltage reference diodes in a SO D -8 0 envelope. They have a low temperature coefficient and are primarily intended for use as voltage reference sources. The SM diode is a leadless diode in a hermetically sealed glass SO D -8 0 envelope with tinplated metal discs at each end , L D A T A BZV80 BZV 81 > typ. < ISZ I ISZ I < < Tamb 5,89 V 6,20 V 6,51 V -
OCR Scan
S3T31 B2V80

2n2222 npn transistor footprint

Abstract: 2N2222A motorola SOT-23 would be MMBT2222. European types use prefixes BCX, BCW, BAV, BAW, BZV, and BZX (Pro-Electron , . Diode Arrays have a prefix of MMAD and can be equated lo the popular MAD series of DIP packaged devices. MMAD Diode Arrays can be obtained in SO-14 and SO-16 packages. Additional types will be added to the , conventional diode and transistor components. · Complete Pretest Capability - Unlike unencapsulated die, which
-
OCR Scan
2N2222 MRF872 2n2222 npn transistor footprint 2N2222A motorola Transistor 2SA 2SB 2SC 2SD 2sa Japanese Transistor MRF8721 MRF8722 MMPQ2222A 2N2222A
Abstract: 6,5 V BZV10 iSZ | < 0,01 % /K BZV 11 !SZ I < 0,005 % /K BZV12 , change of 0,01 mA in the current through the reference diode w ill result in a A V ref of 0,01 mA x 50 Â , diode w ill be different at the different levels of lz- The absolute value of lz is important, however -
OCR Scan
DO-34 BZV13 BZV14 7Z83041

MLT 22 740

Abstract: gw 340 diode oned© oaíhoót. Awr des arc^K àw h diode pt&iCMtfê on cc*.ritxcuM *ned*-ceihode. 50. iiM J«an 7vT , » JOO 3» 1 421 73 864 103 321 BZV/WM3 B 3« 315 M 3» 1 KM 63 646 W 103 293 B2W30-324 6 324 3eo 400
-
OCR Scan
MLT 22 740 gw 340 diode A7W 42 A7W 13 a7w 16 a7w 60 V0LTA01 020C6 30-4M

LDR 03

Abstract: valvo halbleiter 477 BY 478 BY 509 Seite Typ BZV 38 · BZV 46 · BZV 85 BZW' 10 BZW 86 BZX 70 · BZX 75 BZX 78 · BZX , 67 · BZV 10 · bis BZV 14 BZV 15 48 50 2N 2N 2N 2N 2N 2N · 2N 2N · 2N 2N 2N 2 N 2369 · 2 N
-
OCR Scan
LDR 03 valvo halbleiter cny63 LDR -03 CNY62 BYX 71 800

RPY 86

Abstract: valvo halbleiter 50 BYX 56 BYX 90 G BYX 96 bis BYX 99 BZT03 BZV 10 bis BZV 14 BZV 46 BZV 49 BZV 55 · BZV 85 BZW 03 · , -80 1.23 (S. A 8) 1.23 (S. A 8) 200 DO-41 1.42 'h °C 150 Gehäuse Maßbild BZV 49/C2V4 bis BZV 49/C75 BZV 85/C3V6 bis BZV 85/C75 BZV 55/B2V4 bis BZV 55/B75 BZV 55/C2V4 bis BZV 55/C75 BZX 79/B2V4 bis BZX 79 , Bezugsspannungen Kennwerte < 5= Typ BZV 10 BZV11 BZV 12 BZV 13 BZV 14 BZX BZX BZX BZX BZX 90 91 92 93 94 bei /z , Durchlaßspannung (±5% ) Kennwerte Typ BA 220 BA 314 BA 315 BAS 171 ) BZV 46/1V5 BZV 46/2V0 UF V 0,68-0,75 0,75-0
-
OCR Scan
RPY 86 BV EI 30-20 3001 CQY 24 RPY94 diode byx 64 600 valvo transistoren

tca750q

Abstract: DIODE BZV diode w hich e n tire ly determ ines th e therm al s ta b ility o f th e system and can be adapted to th e s ta b ility requirem ents o f A M , FM o r T V receivers. The reference diode B Z V 38 used in co , ) TC A 75 0 BZV 38 Line regulation O u tp u t voltage (V 0 2) * O u tp u t current (12) * O u tp u t , required from the o u tp u t o f stabilizer 1, the reference diode supply m ay be obtained fro m the e m
-
OCR Scan

NIKKO NR 9600

Abstract: Triac bt 808 600cw  SEMiCON INDEX O' i i< I § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , DICKSON ELECTRONICS CORPORATION* DIX ABB-IXYS SEMICONDUCTOR GmbH IXY DIODE TRANSISTOR I NC. DIT ABB , Division AEI CMI, INC.* GENERAL DIODE CORP. GED COLLMER SEMICONDUCTOR INC. COL GE / GENERAL ELECTRIC , INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL RECTIFIER CORP. IRG , POWER SEMICONDUCTORS OPT OPTO DIODE CORP. OPD OPTRON, INC.' OSHINO LAMPS LTD. OSH OXLEY
-
OCR Scan
NIKKO NR 9600 Triac bt 808 600cw BT135 SEMICON INDEXES varicap serie kv diode SR360 BL

smps isolated 15v output 90w

Abstract: 1N53XX side of the bridge rectifier through a low-voltage diode (see fig. 7b). In both circuits, RSTART , Ippk and their voltage rating must be adequate but not much higher than necessary. For a given diode , . The zener diode must have an adequate power handling capability in both transient and steady state , effectively used in place of zener diodes. Table 4 lists some recommended devices available from ST: BZV and , steering diode and in the transformer, both as ohmic losses and radiation losses. Consider also that the
STMicroelectronics
Original
AN1049 smps isolated 15v output 90w 1N53XX 12v to 220v step up transformer Electronic ballast 40W Control 4N35 IC 4N35 L5991

1N53XX

Abstract: UC3842A MONITOR POWER SUPPLY side of the bridge rectifier through a low-voltage diode (see fig. 7b). In both circuits, RSTART , Ippk and their voltage rating must be adequate but not much higher than necessary. For a given diode , . The zener diode must have an adequate power handling capability in both transient and steady state , effectively used in place of zener diodes. Table 4 lists some recommended devices available from ST: BZV and , steering diode and in the transformer, both as ohmic losses and radiation losses. Consider also that the
STMicroelectronics
Original
UC3842A MONITOR POWER SUPPLY smps 110v 1.6a UC3842A application note 160VAC gate drive circuit for interleaved active clamp flyback forward converter 8 pin 4v power switch ic
Showing first 20 results.