NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MBRS360T3 MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface , Body Model, 1B Marking: B36 MARKING DIAGRAM YWW B36 B36 = Device Code Y = Year W = Work Week ... | Original |
6 pages, |
marking B36 1B marking semiconductor b36 MBRS360T3 part marking b36 diode DIODE B36 MBRS360T3 abstract |
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| Abstract: SEMICONDUCTOR SMBB36 SMBB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 1 Wheeling, and Polarity Protection Applications. A APPLICATION D Switching Power Supply. DIM A B C D E F G H DC , Name B36 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL MIN. TYP. ... | Original |
2 pages, |
SMBB36 DIODE B36 datasheet abstract |
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| Abstract: SEMICONDUCTOR SMCB36 SMCB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 1 Wheeling, and Polarity Protection Applications. A APPLICATION D Switching Power Supply. DC/DC Converter. , B36 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL MIN. TYP. MAX. ... | Original |
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SMCb36 DIODE B36 datasheet abstract |
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| Abstract: MOTOROLA SEMICONDUCTOR mmmmmtmammmmmm TECHNICAL DATA Surface Mount Schottky Power Rectifier . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and. metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in , in Plastic Body Indicates Cathode Lead • Marking: B34, B36 MAXIMUM RATINGS MBRS340T3 MBRS340T3 MBRS360T3 MBRS360T3 ... | OCR Scan |
2 pages, |
b34 diode MBRS360T3 MBRS340T3 marking RAV diode marking b34 motorola b36 marking b34 DIODE B34 DIODE B36 diode schottky B34 DIODE MOTOROLA B34 b34 DIODE schottky marking B34 diode SCHOTTKY datasheet abstract |
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| Abstract: SEMICONDUCTOR SMAB36 SMAB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. E Wheeling, and Polarity Protection Applications. APPLICATION 1 C Switching Power Supply. B DC/DC , Marking Type Name B36 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL ... | Original |
2 pages, |
SMAB36 datasheet abstract |
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| Abstract: SEMICONDUCTOR SMAB36 SMAB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. E Wheeling, and Polarity Protection Applications. APPLICATION 1 C Switching Power Supply. B DC/DC , Temperature -40 125 Marking Type Name B36 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ... | Original |
2 pages, |
SMAB36 DIODE B36 datasheet abstract |
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| Abstract: Wheeling Diode • ASO j^JaU Excellent Safe Operating Area • IftflWfê Insulated Type â- ffliÊ : Applications , 4.5 N-m Equivalent Circuit Schematic Fig.BIO Q C +C71 Diode RBE2 SUD 6 6 BO E Note: $ 1 , Conditions Min Typ Max Units & fi fct Rth(j-c) Transistor 0.1 °C/W !» fi tt Rth(j-c) Diode 0.25 'C/W & , ) ASO ASO Derating B-36 ETN85-O5O ETN85-O5O(300A) •X •'j > Kf w tor l„. tr C//S) 10 5 3 I 0.5 0.3 , Voltage of Free Wheeling Diode 10"' I0"2 10"' 10° m IB) t [sec] Transient Thermal Resistance (Diode ... | OCR Scan |
4 pages, |
T151 ml25 M104 DIODE B36 ETN85-O5O ETN85-O5O abstract |
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| Abstract: MM3Z2B4~MM3ZB39 MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES Total power dissipation: max. 200 mW Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature , FF 33 5 32.34.33.66 80 2 0.1 25 0.04.0.12 MM3Z B36 FH 36 5 ... | Original |
3 pages, |
SMD MARKING CODE b24 zener diode b27 smd transistor 5B1 b18 Zener diode Zener B12 Zener Diode marking b27 diode zener B16 marking code diode Eb SMD zener Diode B22 b36 smd diode zener diode 4B3 smd diode b13 MM3ZB39 MM3ZB39 abstract |
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| Abstract: MM3Z2B4~MM3ZB39 MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES Total power dissipation: max. 200 mW Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature , FF 33 5 32.34.33.66 80 2 0.1 25 0.04.0.12 MM3Z B36 FH 36 5 ... | Original |
3 pages, |
transistor 3B6 smd SMD MARKING CODE b24 MARKING B33 SOD323 6b2 zener diode 5B1 smd transistor ZENER B18 zener 5B1 6B2 marking code smd diode code B12 zener diode 4B3 B20 zener diode DIODE B36 marking code diode Eb SMD MM3ZB39 MM3ZB39 abstract |
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| Abstract: MM3Z2B4~MM3ZB39 MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES Total power dissipation: max. 200 mW Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 200 mW Junction Temperature Tj 175 O Storage Temperature , FF 33 5 32.34.33.66 80 2 0.1 25 0.04.0.12 MM3Z B36 FH 36 5 ... | Original |
3 pages, |
ZENER B18 zener diode 4B3 Zener diode smd marking 36 3b3 zener diode B20 zener diode marking code EA SMD 2b7 zener diode Zener diode sod323 marking code 27 zener 5B1 smd transistor marking code EY planar transistor 5B1 b36 smd diode MM3ZB39 MM3ZB39 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| * * * *BZB84-B36 * *NXP Semiconductors * *Dual Zener diodes * * * * * * *IR = 0,05uA @ VR = 25,2V *IZSM = 0,8A @ tp = 100us *VZmax = 36,70V @ IZ = 2mA * * * * * * *Package: SOT23 * *Package Pin 1: Cathode D1 *Package Pin 2: Cathode D2 *Package Pin 3: common Anode * * * *Simulator: PSPICE BZB84-B36 D + IS = 5.229E-15 229E-15 229E-15 229E-15 + N = 1.061 + BV = 36 + IBV = 0.002 + RS = 0.4467 + CJO = 1.866E-11 866E-11 866E-11 866E-11 www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BZB84_B36.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| * * * *BZX84J-B36 * *NXP Semiconductors * *Single Zener diode * * * * * * *IR = 0,05uA @ VR = 25,2V *IZSM = 0,8A @ tp = 100us *VZmax = 36,7V @ IZ = 2mA * * * * * * *Package: SOD323F * *Package Pin 1: Cathode *Package Pin 2: Anode * * * * *Simulator: PSPICE * * *# .MODEL BZX84J-B36 D + IS = 2.857E-15 857E-15 857E-15 857E-15 + N = 1.045 + BV = 36 + IBV = 0.002 + RS = 0.6072 + CJO = 1.866E-11 866E-11 866E-11 866E-11 + VJ www.datasheetarchive.com/download/52977079-596978ZC/71536.zip (BZX84J_B36.prm) |
NXP | 23/10/2012 | 463.29 Kb | ZIP | 71536.zip |
| * * * *BZB84-B36 * *NXP Semiconductors * *Dual Zener diodes * * * * * * *IR = 0,05uA @ VR = 25,2V *IZSM = 0,8A @ tp = 100us *VZmax = 36,70V @ IZ = 2mA * * * * * * *Package: SOT23 * *Package Pin 1: Cathode D1 *Package Pin 2: Cathode D2 *Package Pin 3: common Anode * * * *Simulator: PSPICE BZB84-B36 D + IS = 5.229E-15 229E-15 229E-15 229E-15 + N = 1.061 + BV = 36 + IBV = 0.002 + RS = 0.4467 + CJO = 1.866E-11 866E-11 866E-11 866E-11 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZB84_B36.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *BZX84J-B36 * *NXP Semiconductors * *Single Zener diode * * * * * * *IR = 0,05uA @ VR = 25,2V *IZSM = 0,8A @ tp = 100us *VZmax = 36,7V @ IZ = 2mA * * * * * * *Package: SOD323F * *Package Pin 1: Cathode *Package Pin 2: Anode * * * * *Simulator: PSPICE * * *# .MODEL BZX84J-B36 D + IS = 2.857E-15 857E-15 857E-15 857E-15 + N = 1.045 + BV = 36 + IBV = 0.002 + RS = 0.6072 + CJO = 1.866E-11 866E-11 866E-11 866E-11 + VJ www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZX84J_B36.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *BZX84-B36 * *NXP Semiconductors * *Voltage regulator diode * * * * * * *IR = 50nA @ VR = 0,7V *IZSM = 0,8A @ tp = 100us *VZmax = 38V @ IZ = 2mA * * * * * * *Package: SOT23 * *Package Pin 1: Anode *Package Pin 2: not connected *Package Pin 3: Cathode * * * *Simulator: PSPICE * * *# .MODEL BZX84-B36 D + IS=110.88E-18 88E-18 88E-18 88E-18 + N=.92657 + RS=.85899 + IKF=149.75 + CJO=18.666E-12 666E-12 666E-12 666E-12 + M=.36733 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZX84_B36.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *BZX384-B36 * *NXP Semiconductors * *Voltage regulator diode * * * * * * *IR = 50nA @ VR = 0,7V *IZSM = 0,8A @ tp = 100us *VZmax = 36,7V @ IZ = 2mA *VZSM = @ IZSM = * * * * * *Package: SOD323 * *Package Pin 1: Cathode *Package Pin 2: Anode * * * * *Simulator: SPICE2 * * *# .MODEL BZX384-B36 D + IS = 1.13E-14 13E-14 13E-14 13E-14 + N = 1.103 + BV = 36 + IBV = 0.002 + RS = 0.4798 + CJO = 1 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZX384_B36.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *BZX585-B36 * *NXP Semiconductors * *Voltage regulator diode * * * * * * *IR = 50nA @ VR = 0,7V *IZSM = 0,8A @ tp = 100us *VZmax = 36,72V @ IZ = 2mA *VZSM = @ IZSM = * * * * * *Package: SOD523 * *Package Pin 1: Cathode *Package Pin 2: Anode * * * * *Simulator: SPICE2 * * *# .MODEL BZX585-B36 D + IS = 1.13E-14 13E-14 13E-14 13E-14 + N = 1.103 + BV = 36 + IBV = 0.002 + RS = 0.4798 + CJO = 1 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZX585_B36.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *BZX884-B36 * *NXP Semiconductors * *Single Zener diode * * * * * * *IR = 50nA @ VR = 0,7V *IZSM = 0,8A @ tp = 100us *VZmax = 36,72V @ IZ = 2mA * * * * * * *Package: SOD882 * *Package Pin 1: Cathode *Package Pin 2: Anode * * * * *Simulator: SPICE2 * * *# .MODEL BZX884-B36 D + IS = 5.229E-15 229E-15 229E-15 229E-15 + N = 1.061 + BV = 36 + IBV = 0.002 + RS = 0.4467 + CJO = 1.866E-11 866E-11 866E-11 866E-11 + VJ = 0.7591 + M = 0 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (BZX884_B36.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| # GHz S MA R 50 ! 12 Jul 1993 / 14:16:43 !BB914 BB914 BB914 BB914, Si Varicap Diode in SOT23 [b36V0u00] ! VR=6.00 V !f GHZ S11 ! MAG ANG .080 .99752 -59.6 .090 .99691 -65.7 .100 .99637 -71.5 .110 .99572 -76.9 .120 .99541 -82.0 .150 .99392 -95.5 .200 .99225 -112.9 .250 .99052 -125.8 .300 .98901 -135.7 .350 .98814 -143.5 .400 .98764 -149.8 .450 .98734 -155.2 .500 .98656 -159 www.datasheetarchive.com/files/siemens/ehdata/spar/bb914/b36v0u00.s1p |
Siemens | 13/07/1993 | 1.07 Kb | S1P | b36v0u00.s1p |
| A) Input Bias Current, max (in pA) CMRR (in dB) - - 36 2 20 8e+06 110 Transconductance Amplifier with Linearizing Diodes and Buffers [Information as of 14-Dec-98] LM13600 LM13600 LM13600 LM13600 Dual Operational Transconductance Amplifier with Linearizing Diodes otherwise operate independently. Linearizing diodes are provided at the inputs to reduce distortion and Excellent matching between amplifiers Linearizing diodes Controlled impedance buffers High output www.datasheetarchive.com/files/national/htm/nsc05626.htm |
National | 18/12/1998 | 11.07 Kb | HTM | nsc05626.htm |