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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

DIODE A7N

Catalog Datasheet MFG & Type PDF Document Tags

transistor a7n

Abstract: DIODE A7N AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power , ABC)D*A7N)26#16;F1B#23;#16;81B#23; 81B#23;*E#16;#19;'( 5#29;D$#1#30;##29;$#26;#29;/D -$# , , # E #22;#16;E )2 2*A #29;'A ABC)D*A7N)26#16;F1B7#16;81B7 81B7*#17;#22;'( #22;#16;#22;E 3#26;#29;/.#D)#28;.1#
Alpha & Omega Semiconductor
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transistor a7n DIODE A7N A7N transistor 1df diode

BUZ11S2FI

Abstract: CT55 170 ns â  Sea note on ISOWATT 220 in this datasheet _ fwT SGS-THOMSON â 7#n , (Continued) 30E D Parameters Test Conditions Min. Typ. Max. Unit / T- 39-n SOURCE DRAIN DIODE iSD , '" -1C0 -50 0 SO 100 Tj CC) Source-drain diode forward characteristics _ Ã"7 SGS-THOMSON 180 7=12^237
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BUZ11S2 BUZ11S2FI CT55 T-39- ISOWATT220

transistor 123 DL

Abstract: TRANSISTOR 8FB AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power , "#25;#24;8FB#26;#27;#25;#22;#17;#22;#21;F#20;%#25; E#22; 2,A #30;6A ABC-D,A7N-26#16;F1B#23;#16;81B#23; 81B#23;,E#16;#19;#26;#23;6#25; 5#30;D0#*"##30;0#29;#30;&D #27;0##27; 2,#22;#16;#19;CD#22;#16; , #*"##30;0#29;#30;&D #27;0##27; !$*# E #22;#16;E -2 2,A #30;6A ABC-D,A7N
Alpha & Omega Semiconductor
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transistor 123 DL TRANSISTOR 8FB a406 transistor A7N-26 DDD50

DIODE A7N

Abstract: A7N transistor monitoring is possible by sensing the voltage drop across a diode implemented close to the die's hot point , Inverted phase output data port C DIODE Diode for die junction temperature monitoring COR/DRCN , , DAON DIODE GND 3 5402AS­BDC­11/04 Pin Description Table 2. Pin Description Symbol Pin , , A3N, A4N, A5N, A6N, A7N, A8N, A9N A16, A15, A14, A13, A12, A11, A10, A9, A8, A7 Inverted phase , A17 Staggered output mode selection signal BIST V17 Built-in self test enable DIODE
Atmel
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EBGA240 AT84CS001 DIODE B4N d9n diode b7n diode 2600 corning DIODE B3N

smd transistor A7p

Abstract: smd transistor A6p /8 Ce13 5/6 Ce14 7/8 Ce15 T1 A7N RSH 1 47 2 X2_5 R2 R6 X2 , Atmel® Murata® STS4DNF60L STS4DNF60L T2 Dual NMOS D1 Diode Schottky 60V / 3A ST ST 30BQ060 IR D2 Diode Schottky 60V / 3A 30BQ060 IR LD1 LED Red TLMT
Atmel
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smd transistor A7p smd transistor A6p smd transistor A4p A7p smd transistor SMD A7p smd transistor A7n ATA5279

74HC76

Abstract: DIODE A7N VCc+ 0-5 V Vo DC Output Voltage -0.5 to Vcc + 0.5 V ilk DC Input Diode Current =t 20 mA 'ok DC Output Diode Current ± 20 mA Io DC Output Source Sink Current Per Output Pin ± 25 mA 'cc or 'gnd DC , OUTPUT EQUIVALENT CIRCUIT 'cc cc Gf SGS-THOMSON Ã"7#n, MOeiBOiyiCTISOHBIBS 5/5 153 This Material
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M54HC76 M74HC76 74HC76 M74HC76B1N 54HC 74HC 54/74LS76 M54/74HC76
Abstract: D5n D6 D6n D7 D7n m "D2n ÃT "D3n D4 D4n or T55n DF "D6n Ã7 ~Ã7n X: DONâ , DC Output Voltage - 0.5 to Vcc + 0.5 l|K DC Input Diode Current ± 20 mA lOK DC Output Diode Current ± 20 mA DC Output Source Sink Current Per Output Pin ± 35 mA -
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M54HC356 M74HC356 54/74LS356 M54/74HC356 7T2T237
Abstract: DOn ÃT D1n m DSn T5T D3n ÃT D4n D5" Ã5n T5S" D6n 07 Ã7n DO DOn D1 D1n D2 D2n , 0.5 Vo DC Output Voltage â'"0.5 to VCq + 0.5 V IlK DC Input Diode Current ± 20 mA lOK DC Output Diode Current ± 20 mA !0 DC Output Source Sink Current Per Output -
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QMD143 M54HC354 M74HC354 54/74LS354 M54/74HC354 74HC354

A7N transistor

Abstract: transistor a7n V; lD= 9 A; V gs = 5 V ; R g = 1 0 i i ; T, - 25°C - ti RE VE RSE DIODE LIMITING VALUE S AND C , current Diode forward voltage Reverse recovery time Reverse recovery charge Tsp = 25°C Tsp = 25°C lF = , specification TrenchMOSTM transistor Logic level FET PHT11N06LT ·inn WDSS% a7n 7 U inn 1UU an yu on oU
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ti77 ec ubt

DIODE A7N

Abstract: 004B DAI, DAIN Unchanged A21 B/GB A22 Diode/DECb Unchanged A23 PGEB Inactive at , VPLUSD A7 A7N VCCD VCCD VCCD A8 A8N B0N AOR / DRAN VPLUSD VPLUSD , DIODE ADC PGEB VPLUSD VCCA VCCA AGND SDA AGND VEE VEE VCCA VCCA NC
e2v semiconductors
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AT84AS003CTP AT84AS003VTP AT84AS004CTP AT84AS004VTP 0812D 004B AT84AS003 diode t25 4 d9 DIODE F22 E2V cmos AT84AS003/004 AT84AS003/004B

AT84AS004CTP

Abstract: diode t25 4 d9 , V19 DAI, DAIN Unchanged A21 B/GB A22 Diode/DECb Unchanged A23 PGEB , 5471C­BDC­11/10//06 VCCA VCCA VEE plane: VCCA VCCA VEE VEE VCCA VEE DIODE ADC , VPLUSD VPLUSD A7 A7N VCCD VCCD VCCD A8 A8N B0N AOR / DRAN VPLUSD
e2v semiconductors
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diode t25 4 B9 a6n 100 E20 L27 B19 transformer diode t25 4 A6 AT84AS004

EV10AQ190

Abstract: transistor b9n diode for the die junction temperature monitoring is implemented using a diode-mounted transistor but , NC NC NC NC NC GND GND 1 A1N A3N A5N A7N NC NC NC NC NC VCC VCC 2 CDRN CDR DDRN DDR D1N D3N D5N , ) Description Digital Output signals A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A0N A1N A2N A3N A4N A5N A6N A7N A8N A9N , diode anode and cathode NC Reserved pins Do not connect 16 0952BS­BDC­02/09 e2v , reset (active low) Digital scan mode signals Diode anode for die junction temperature monitoring Diode
e2v semiconductors
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EV10AQ190 transistor b9n EVX10AQ190TPY EV10AQ190TPY-EB dioda C5N H1 dioda EBGA380 F-91572

EV10AQ190

Abstract: Marking D9N diode for the die junction temperature monitoring is implemented using a diode-mounted transistor but , C2 C0 D0 D2 D4 D6 NC NC BDR BDRN ADR ADRN A1 A3 A5 A7 NC NC NC NC NC GND GND 1 A1N A3N A5N A7N NC , A6 A7 A8 A9 A0N A1N A2N A3N A4N A5N A6N A7N A8N A9N AOR AORN ADR ADRN B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 , Output reference for Channel A-B and C-D Input common mode Temperature diode anode and cathode NC , Function Chip Select (active low) Digital asynchronous reset (active low) Digital scan mode signals Diode
e2v semiconductors
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Marking D9N marking aa5 transistor marking c3n 0952CS

EV10AS150

Abstract: diode t25 4 A8 the DMUX power consumption. The ADC junction temperature monitoring is made possible through the DIODE input by sensing the voltage drop across a diode implemented on the ADC close to chip hot point. The , , BORN/DRB C0.C9 C0N.C9N COR/DRCN, CORN/DRC D0.D9 D0N.D9N DOR/DRDN, DORN/DRD RS CLKDACTRL DIODE , staggered mode for port D DMUX ratio selection signal Control signal for clock delay cell Diode for die junction temperature monitoring (ADC) Name RESET AGND DGND SLEEP STAGG RS BIST DRTYPE DIODE ADC
e2v semiconductors
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EV10AS150 EBGA317 diode t25 4 A8 EVX10AS150TP EV10AS150TP-EB 10 GSPS ADC FR4 0954BS

AT84CS001

Abstract: atmel tbga Swing adjust Sleep mode Built-in Test Temperature diode Available package 3. New Functions of the , "1": R = 10 K "0": R= 10 Built-in Self Test DIODE Max: VDiode = 700 mV Idiode = 1 mA DIODE Max: VDiode = 700 mV Idiode = 1 mA Die junction temperature monitoring SwiAdjust 0V , name AT84CS001 Signal name C19 DIODE DIODE B17 Asyncreset ASYNCRST V18 , C7 A6 W3 F3 C8N A9 C6 A7N V4 F2 C9 B9 C5 A7 W4 F1 C9N
Atmel
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TS81102G0 TS8388B TS83102G0B AT84AS008 5413B atmel tbga diode b17 5413B-BDC-04/05

74ABT16652

Abstract: BT16652DGG RATING UNIT Vcc DC supply voltage -0.5 to +7.0 V IlK DC input diode current V| , Waveform 2. Propagation Delay, nAx to nBx or nBx to nAx nSBA or nSAB J \r,â'"7N VM tpHL VM \ \ '
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74ABT16652 BT16652DGG BT16652DL A/-32 74ABT16 SH00022 SSOP56 TSSOP56

EV10CS140TP-EB

Abstract: EVX10CS140TPY D0N.D9N DOR/DRDN, DORN/DRD CLKDACTRL ASYNCRST SLEEP RS DRTYPE STAGG BIST DIODE Functional Description , outputs Built-In Test enable Diode for die Junction Temperature monitoring DGND SLEEP STAGG RS BIST , , DRN DIODE Bit 0 corresponds to LSB and Bit 9 to MSB 4 1007A­BDC­09/09 e2v semiconductors , current into a diode mounted transistor and sensing the voltage across the DIODE pin and the closest available ground pin. The measurement setup is described in the Figure hereafter: Figure 5-11. DMUX Diode
e2v semiconductors
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EV10CS140 EV10CS140TP-EB EVX10CS140TPY

DIODE A7N

Abstract: D0N.D9N DOR/DRDN, DORN/DRD CLKDACTRL ASYNCRST SLEEP RS DRTYPE STAGG BIST DIODE Functional Description , outputs Built-In Test enable Diode for die Junction Temperature monitoring DGND SLEEP STAGG RS BIST , , DRN DIODE Bit 0 corresponds to LSB and Bit 9 to MSB 4 1007B­BDC­11/09 e2v semiconductors , method consists in forcing a 1 mA current into a diode mounted transistor and sensing the voltage across the DIODE pin and the closest available ground pin. The measurement setup is described in the Figure
e2v semiconductors
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Abstract: pattern fashion on all 4 ports. A diode is provided to monitor the junction temperature, with both anode , DGND D9 D8N D8 H J A7 A7N A6N DGND DGND VCC3 AGND AGND AGND AGND VCC3 DGND , DIODE C OA DGND D1N D1 N P A0 A0N DIODE A GA DGND AGND AGND AGND AGND , A5, A5N K1, K2 A6, A6N K3, J3 A7, A7N J1, J2 A8, A8N H1, H2 A9, A9N H3, G3 , Decimation enable DIODEA, DIODEC Diode for die junction temperature monitoring RS0 ; RS1 DIODEA e2v semiconductors
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EV10AS180AGS CI-CGA255
Abstract: division selection (possibility to change the division ratio of the DSP clock) o Diode for die junction , SHIFT CLOCK DIV/X CLOCK BUFFER DIODE 2 PSS[2:0] SYNC, OCDS[1:0] SYNCN CLK, CLKN , , OUTN DSP_CK, DSP_CKN DIODE 2 AGND DGND Functions Description Table 9. Name VCCD , digital input Port D Diode Diode for temperature monitoring OUT In-phase analog output , any time EV10DS130AGS 4.11. Diode function A diode for die junction temperature monitoring is e2v semiconductors
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255-C 100MH 4500MH
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