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ISL8200AMIRZ Intersil Corporation Complete Current Share 10A DC/DC Power Module; MODULE23; Temp Range: See Datasheet visit Intersil Buy
ISL8200AMIRZ-T Intersil Corporation Complete Current Share 10A DC/DC Power Module; MODULE23; Temp Range: See Datasheet visit Intersil Buy
SN74S1052NSR Texas Instruments 16-Bit Schottky Barrier Diode Bus-Termination Array 20-SO 0 to 70 visit Texas Instruments
SN74S1053N Texas Instruments 16-Bit Schottky Barrier Diode Bus-Termination Array 20-PDIP 0 to 70 visit Texas Instruments Buy
SN74S1056D Texas Instruments 8-bit Schottky Barrier Diode Bus-Termination Array 16-SOIC 0 to 70 visit Texas Instruments
UC3610DWTRG4 Texas Instruments Dual Schottky Diode Bridge 16-SOIC 0 to 70 visit Texas Instruments

DIODE 200A 600V schottky

Catalog Datasheet MFG & Type PDF Document Tags

1N5408 smd diodes

Abstract: bridge rectifier 24V AC to 24v dc POWER, PFC 600V Ultra Fast Diode Product Name Status Description Features Package , '¢ Power MOSFETS â'¢ Controller ICs â'¢ Optocouplers â'¢ Schottky Diodes/Rectifiers â'¢ Ultrafast , rectifiers and filters. Trench MOS Schottky technology is a new technology that can replace planar , . Trench MOS Schottky rectifiers work well as output rectifiers, especially in multi-output systems. In , DIP4 CSA 93751 UL1577 BSI Switch Diode Product Name Status 1N4007 Description
Vishay Intertechnology
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1N5408 smd diodes bridge rectifier 24V AC to 24v dc 1N5408 DO-201AD BYV26EGP DO-204AC DO-15 DO-204AL

TRANSISTOR J 5804

Abstract: TRANSISTOR J 5804 NPN GGimM PART NU M BER RECTIFIER 1 OA: 200V l.OA; 200V l.OA; 400V l.OA; 400V l.OA; 600V l.OA; 600V l.OA; 800V l.OA; 1000V PIN DIODE General Purpose, PIN RECTIFIER 2.5A; 50V 2.5A; 50V 2.5A , ; 100 V 6.0A; 100V 6.0A; 125 V 6.0A; 150V 6.0A; 150V 20.0A; 50V; DO-4 20.OA; 50V; DO-4 20.0A; 75V; DO-4 20.0A; 100V; DO-4 20.0A; 100V; DO-4 20.0A; 125V; DO-4 20.0A; 150V; DO-4 20.0A; 150V; DO-4 PIN DIODE Low Distortion, AGC Diode ZENER 5.0W; 5 % 5.0W; 5 % SCHOTTKY RECTIFIER 50A; 30V; DO
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OCR Scan
TRANSISTOR J 5804 TRANSISTOR J 5804 NPN j 5804 transistor TRANSISTOR J 5803 1N5615 1N5616 1N5617 1N5618 1N5619 1N5620

STTH

Abstract: mig welding max. at 1A ­ 200A/us and 25°C I 400V and 600V (R subfamily) ­ Low VF: 1.4V max. at Tj = 150°C ­ , and trr Power Schottky Current: 80 = 80A Voltage: 06 = 600V Voltage: 170 = 170V , New ultrafast and Schottky diodes for welding applications Two new high performance product , up to 200A, deliver optimum solutions and performance with compact packages to the new generation , primary stage. Half bridge converter Front end V OUT AC in I I PFC boost diode
STMicroelectronics
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DO-247 STTH mig welding tig welder circuit tig welding half bridge half bridge converter diode mig welder 170/STTH 02/STTH 03/STTH 10/STTH FLDIODE0307
Abstract: 600V SiC COMMON CATHODE SCHOTTKY DIODE SML10SIC06M3M â'¢ High Temperature Operation Tj = 200 , ://www.semelab-tt.com Document Number 9709 Issue 1 Page 1 of 3 600V SiC COMMON CATHODE SCHOTTKY DIODE , 600V SiC COMMON CATHODE SCHOTTKY DIODE SML10SIC06M3M Equivalent Reverse Recovery Time IF=500mA, IR , -14 -16 -18 -1.200 Time (nS) SiC Schottky Diode, no minority carrier recombination thus , '¢ Suitable for Down Hole Applications. DIODE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise Semelab
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Abstract: 600V SiC COMMON ANODE SCHOTTKY DIODE SML10SIC06M3A â'¢ High Temperature Operation Tj = 200 , :10353 Issue 1 Page 2 of 3 600V SiC COMMON ANODE SCHOTTKY DIODE SML10SIC06M3A Equivalent Reverse , SCHOTTKY DIODE SML10SIC06M3A Typical Performance Over Temperature The Forward Voltage Characteristics , -16 -18 -1.2 Time (nS) SiC Schottky Diode, no minority carrier recombination thus zero , '¢ Suitable for Down Hole Applications. DIODE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise Semelab
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Abstract: 600V SiC COMMON ANODE SCHOTTKY DIODE SML10SIC06M3A â'¢ High Temperature Operation Tj = 200 , :10353 Issue 1 Page 2 of 3 600V SiC COMMON ANODE SCHOTTKY DIODE SML10SIC06M3A Equivalent Reverse , SCHOTTKY DIODE SML10SIC06M3A Typical Performance Over Temperature The Forward Voltage Characteristics , -16 -18 -1.2 Time (nS) SiC Schottky Diode, no minority carrier recombination thus zero , '¢ Suitable for Down Hole Applications. DIODE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise Semelab
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Abstract: Document Number 9841 Issue 1 Page 1 of 4 600V COMMON CATHODE SILICON CARBIDE (SiC) SCHOTTKY DIODE , 600V COMMON CATHODE SILICON CARBIDE (SiC) SCHOTTKY DIODES SML10SIC06YIC â'¢ Hermetic Metal TO-257AA Package. â'¢ Semelabâ'™s Silicon Carbide (SiC) Schottky diodes exhibit low forward , COMMON CATHODE SILICON CARBIDE (SiC) SCHOTTKY DIODE SML10SIC06YIC Typical Performance Over , CARBIDE (SiC) SCHOTTKY DIODE SML10SIC06YIC SiC Schottky Diode, no minority carrier recombination thus Semelab
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SML10SIC06YC

D04S60

Abstract: to220 pcb footprint SDP04S60, SDD04S60 SDT04S60 thinQ! Silicon Carbide Schottky Diode · Worlds first 600V Schottky diode SiC Schottky Diode Product Summary · Revolutionary semiconductor V 600 VRRM , behavior · Ideal diode for Power Factor Correction up to 800W 1) · No forward recovery Type SDP04S60 , Diode forward voltage V VF IF=4A, Tj=25°C - 1.7 1.9 IF=4A, Tj=150°C - 2 2.4 Reverse current uA IR V R=600V, T j=25°C - 15 200 V R=600V, T j=150°C -
Infineon Technologies
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P-TO252 Q67040-S4369 D04S60 to220 pcb footprint smd schottky diode marking 321 Schottky diode TO220 diode schottky 600v D04S60C PG-TO220-2-2 P-TO220 P-TO220-3

d06s60

Abstract: D06S60C SDP06S60 SDT06S60 thinQ! Silicon Carbide Schottky Diode · Worlds first 600V Schottky diode SiC Schottky Diode Product Summary · Revolutionary semiconductor V 600 VRRM material - , PG-TO220-2-2. · No temperature influence on P-TO220 the switching behavior · Ideal diode for , Parameter Symbol Values min. typ. Unit max. Static Characteristics Diode forward voltage , current uA IR V R=600V, T j=25°C - 20 200 V R=600V, T j=150°C - 50 1000
Infineon Technologies
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Q67040-S4446 d06s60 D06S60C T-1228 600 V power Schottky silicon carbide diode Q67040-S4371 D06S60 P-TO220-3-1 P-TO220-3-21 PG-TO-220-2-2

DIODE 200A 600V schottky

Abstract: SCHOTTKY 4A 600V Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · Revolutionary semiconductor material Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · Ideal diode for Power Factor , nC Switching time trr IF=4A di/dt=200A/ us VR= 400V Tj = 150 °C VR=0V VR=300V VR=600V , SIDC01D60SIC2 VBR 600V 600V IF 4A 4A Die Size 1.09 x 0.91 mm2 1.17 x 0.99 mm2 Package Ordering
Infineon Technologies
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DIODE 200A 600V schottky SCHOTTKY 4A 600V Q67050-A4161 L4804A

SPD06S60

Abstract: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · Revolutionary semiconductor material Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · Ideal diode for Power Factor , =6A di/dt=200A/ u s T j =25 ° C f=1MHz V R =0V V R =300V V R =600V 300 20 15 pF Edited by , SIDC02D60SIC2 VBR 600V 600V IF 6A 6A Die Size 1.32 x 1.32 mm2 1.40 x 1.40 mm2 Package sawn on foil
Infineon Technologies
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SPD06S60 Q67050-A4162A1 Q67050-A4162A2 L4814A

D05S60

Abstract: schottky 400v SDT05S60 thinQ! Silicon Carbide Schottky Diode · Worlds first 600V Schottky diode SiC Schottky Diode Product Summary · Revolutionary semiconductor V 600 VRRM material - Silicon , max. Static Characteristics Diode forward voltage V VF IF=5A, Tj=25°C - 1.5 1.7 IF=5A, Tj=150°C - 1.7 2.1 Reverse current uA IR V R=600V, T j=25°C - 19 200 V R=600V, T j=150°C - 45 1000 Rev. 2.2 Page 2 2008-06-02 SDT05S60
Infineon Technologies
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D05S60 Q67040S4644 schottky 400v

Schottky diode TO220

Abstract: D08S60 SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode · Worlds first 600V Schottky diode Product Summary · Revolutionary semiconductor V 600 VRRM material - Silicon , max. Static Characteristics Diode forward voltage V VF IF=8A, Tj=25°C - 1.5 1.7 IF=8A, Tj=150°C - 1.7 2.1 Reverse current uA IR V R=600V, T j=25°C - 28 300 V R=600V, T j=150°C - 70 1500 Rev. 2.2 Page 2 2008-06-02 SDT08S60
Infineon Technologies
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D08S60 Q67040S4647

d12s60

Abstract: SDT12S60 SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode · Worlds first 600V Schottky diode Product Summary · Revolutionary semiconductor V 600 VRRM material - Silicon , max. Static Characteristics Diode forward voltage V VF IF=12A, Tj=25°C - 1.5 1.7 IF=12A, Tj=150°C - 1.7 2.1 Reverse current uA IR V R=600V, T j=25°C - 40 400 V R=600V, T j=150°C - 100 2000 Rev. 2.3 Page 2 2008-06-03 SDT12S60
Infineon Technologies
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Q67040-S4470 d12s60 diode schottky code 03 US180 D12S60

D10S60

Abstract: PG-TO-220-2-2 SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode · Worlds first 600V Schottky diode Product Summary · Revolutionary semiconductor V 600 VRRM material - Silicon , max. Static Characteristics Diode forward voltage V VF IF=10A, Tj=25°C - 1.5 1.7 IF=10A, Tj=150°C - 1.7 2.1 Reverse current uA IR V R=600V, T j=25°C - 34 350 V R=600V, T j=150°C - 85 1500 Rev. 2.2 Page 2 2008-06-02 SDT10S60
Infineon Technologies
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D10S60 Q67040S4643

d02s60

Abstract: d02s60c SDT02S60 thinQ! Silicon Carbide Schottky Diode · Worlds first 600V Schottky diode SiC Schottky Diode Product Summary · Revolutionary semiconductor VRRM 600 V · Switching , max. Static Characteristics Diode forward voltage V VF IF=2A, Tj=25°C - 1.75 2 IF=2A, Tj=150°C - 2.2 2.6 Reverse current uA IR V R=600V, T j=25°C - 7 100 V R=600V, T j=150°C - 30 500 Rev. 2.2 Page 2 2008-06-02 SDT02S60
Infineon Technologies
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d02s60 d02s60c Q67040-S4511 D02S60

d12s60

Abstract: SDT12S60 SDT12S60 Silicon Carbide Schottky Diode · Worlds first 600V Schottky diode · Revolutionary , influence on the switching behavior · No forward recovery thinQ! SiC Schottky Diode Product Summary VRRM , , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF , 2.1 uA 400 2000 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C Rev. 2.2 Page 2 , Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=12A, diF /dt=200A/us, Tj
Infineon Technologies
Original

d02s60

Abstract: SDT02S60 Silicon Carbide Schottky Diode · Worlds first 600V Schottky diode · Revolutionary , influence on the switching behavior · No forward recovery thinQ!¥ SiC Schottky Diode Product Summary , Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF , uA 100 500 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C Rev. 2.1 Page 2 , Parameter min. AC Characteristics Total capacitive charge V R=400V, IF=2A, diF/dt=200A/us, T j
Infineon Technologies
Original
Abstract: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · Revolutionary semiconductor material Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · Ideal diode for Power Factor , =4A di/dt=200A/ u s T j =25 ° C f=1MHz V R =0V V R =300V V R =600V 150 10 7 pF Edited by , SIDC01D60SIC2 VBR 600V 600V IF 4A 4A Die Size 1.09 x 0.91 mm2 1.17 x 0.99 mm2 Package sawn on foil Infineon Technologies
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Q67050-A4161A1 Q67050-A4161A2
Abstract: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · Revolutionary semiconductor material Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · Ideal diode for Power Factor , nC Switching time trr IF=6A di/dt=200A/ us VR= 400V Tj = 150 °C VR=0V VR=300V VR=600V , SIDC02D60SIC2 VBR 600V 600V IF 6A 6A Die Size 1.32 x 1.32 mm2 1.4 x 1.4 mm2 Package Ordering Code Infineon Technologies
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Q67050-A4162
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