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UC1612J Texas Instruments UC1612 Dual Schottky Diode ri Buy
UC1612L Texas Instruments UC1612 Dual Schottky Diode ri Buy
UC3612DP Texas Instruments UC3612 Dual Schottky Diode ri Buy

DIODE 200A 600V schottky

Catalog Datasheet Results Type PDF Document Tags
Abstract: Preliminary SIDC01D60SIC2 SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · Revolutionary semiconductor material Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · Ideal diode for Power Factor , nC Switching time trr IF=4A di/dt=200A/ µs VR= 400V Tj = 150 °C VR=0V VR=300V VR=600V , SIDC01D60SIC2 SIDC01D60SIC2 VBR 600V 600V IF 4A 4A Die Size 1.09 x 0.91 mm2 1.17 x 0.99 mm2 Package Ordering ... Original
datasheet

4 pages,
144.17 Kb

SCHOTTKY 4A 600V DIODE 200A 600V schottky SIDC01D60SIC2 SIDC01D60SIC2 abstract
datasheet frame
Abstract: Preliminary SIDC02D60SIC2 SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · Revolutionary semiconductor material Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · Ideal diode for Power Factor , di/dt=200A/ µ s T j =25 ° C f=1MHz V R =0V V R =300V V R =600V 300 20 15 pF Edited by , SIDC02D60SIC2 SIDC02D60SIC2 VBR 600V 600V IF 6A 6A Die Size 1.32 x 1.32 mm2 1.40 x 1.40 mm2 Package sawn on foil ... Original
datasheet

4 pages,
141.21 Kb

SPD06S60 SIDC02D60SIC2 SIDC02D60SIC2 abstract
datasheet frame
Abstract: Preliminary SIDC00D60SIC2 SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · Revolutionary semiconductor material Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · Ideal diode for Power Factor , nC Switching time trr IF=2A di/dt=200A/ µs VR= 400V Tj = 150 °C VR=1V VR=300V VR=600V , SIDC00D60SIC2 SIDC00D60SIC2 VBR 600V 600V IF 2A 2A Die Size 0.84 x 0.59 mm2 0.84 x 0.59 mm2 Package Ordering ... Original
datasheet

4 pages,
65.69 Kb

SWITCHING DIODE 600V 2A SDP02S60 SIDC00D60SIC2 SIDC00D60SIC2 abstract
datasheet frame
Abstract: Preliminary SIDC02D60SIC2 SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · Revolutionary semiconductor material Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · Ideal diode for Power Factor , nC Switching time trr IF=6A di/dt=200A/ µs VR= 400V Tj = 150 °C VR=0V VR=300V VR=600V , SIDC02D60SIC2 SIDC02D60SIC2 VBR 600V 600V IF 6A 6A Die Size 1.32 x 1.32 mm2 1.4 x 1.4 mm2 Package Ordering Code ... Original
datasheet

4 pages,
141.91 Kb

SIDC02D60SIC2 SIDC02D60SIC2 abstract
datasheet frame
Abstract: Preliminary SIDC01D60SIC2 SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · Revolutionary semiconductor material Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · Ideal diode for Power Factor , di/dt=200A/ µ s T j =25 ° C f=1MHz V R =0V V R =300V V R =600V 150 10 7 pF Edited by , SIDC01D60SIC2 SIDC01D60SIC2 VBR 600V 600V IF 4A 4A Die Size 1.09 x 0.91 mm2 1.17 x 0.99 mm2 Package sawn on foil ... Original
datasheet

4 pages,
143.52 Kb

SIDC01D60SIC2 SIDC01D60SIC2 abstract
datasheet frame
Abstract: SIDC11D60SIC3 SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · , nC Tj = 150 °C n.a. ns V R = 1V 150 V R =300V 10 V R =600V di/dt=200A/µs , No temperature influence on the switching behavior · Ideal diode for Power Factor Correction · No forward recovery Chip Type VBR SIDC11D60SIC3 SIDC11D60SIC3 600V IF C Die Size 4A A , voltage drop Symbol Conditions Value min. Typ. max. Unit IR V R =600V Tj= 2 5 ... Original
datasheet

4 pages,
53.28 Kb

SIDC11D60SIC3 SDP04S60 Schottky diode Die 600V,4A DIODE diode schottky 600v SIDC11D60SIC3 abstract
datasheet frame
Abstract: SIDC19D60SIC3 SIDC19D60SIC3 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · , nC Tj = 150 °C n.a. ns V R = 1V 300 V R =300V 20 V R =600V di/dt=200A/µs , No temperature influence on the switching behavior · Ideal diode for Power Factor Correction · No forward recovery Chip Type VBR SIDC19D60SIC3 SIDC19D60SIC3 600V IF C Die Size 6A A , voltage drop Symbol Conditions Value min. Typ. max. Unit IR V R =600V Tj= 2 5 ... Original
datasheet

4 pages,
53.18 Kb

SIDC19D60SIC3 DIODE 200A 600V schottky diode schottky 600v SPD06S60 SIDC19D60SIC3 abstract
datasheet frame
Abstract: Final SIDC00D60SIC2 SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · Revolutionary semiconductor material Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · Ideal diode for Power Factor , V R =300V 5.2 V R =600V di/dt=200A/µs 5 Edited by INFINEON Technologies AI PS DD HV3 , Die Size Package SIDC00D60SIC2 SIDC00D60SIC2 600V 2A 0.84 x 0.59 mm2 sawn on foil SIDC00D60SIC2 SIDC00D60SIC2 ... Original
datasheet

4 pages,
57.28 Kb

SIDC00D60SIC2 SDP02s L4834A SDP02S60 SWITCHING DIODE 600V 2A DIODE 200A 600V schottky SIDC00D60SIC2 abstract
datasheet frame
Abstract: SIDC05D60SIC3 SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: · Worlds first 600V Schottky diode · , 50 V R =300V 5.2 V R =600V di/dt=200A/µs 5 Edited by INFINEON Technologies, AI PS , No temperature influence on the switching behavior · Ideal diode for Power Factor Correction · No forward recovery Chip Type VBR SIDC05D60SIC3 SIDC05D60SIC3 600V IF C Die Size 2A A , charge Symbol QC Conditions Value min. Typ. max. Unit I F =2A d i /dt=200A/µs ... Original
datasheet

4 pages,
53.43 Kb

SIDC05D60SIC3 SDT02S60 Schottky diode Die SIDC05D60SIC3 abstract
datasheet frame
Abstract: max. at 1A ­ 200A/µs and 25°C I 400V and 600V (R subfamily) ­ Low VF: 1.4V max. at Tj = 150°C ­ , Blank = medium VF and trr Power Schottky Current: 80 = 80A Voltage: 06 = 600V Voltage: 170 , New ultrafast and Schottky diodes for welding applications Two new high performance product , up to 200A, deliver optimum solutions and performance with compact packages to the new generation , primary stage. Half bridge converter Front end V OUT AC in I I PFC boost diode ... Original
datasheet

2 pages,
90.2 Kb

600V Ultrafast Diode DPAK tig welding DIODE 200A 600V schottky STPS schottky 400v Diode STTH DO-247 DO247 diode mig welder half bridge converter ISOTOP mig welder tig welding half bridge datasheet abstract
datasheet frame

Datasheet Content (non pdf)

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;DI_SBR20A200CTB SBR20A200CTB SBR20A200CTB SBR20A200CTB;Diodes;Si; 200V 20.0A 20.0ns Diodes INC Schottky rectifier .MODEL DI_SBR20A200CTB SBR20A200CTB SBR20A200CTB SBR20A200CTB D ; 30.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2A30P1 SBR2A30P1 SBR2A30P1 SBR2A30P1 D ( IS=78.9u RS=29.8m BV=30.0 ;Diodes;Si; 60.0V 60.0A 68.0ns Diodes INC Schottky rectifier .MODEL DI_SBR60A60CT SBR60A60CT SBR60A60CT SBR60A60CT D ( IS=1.44m ;Si; 40.0V 1.00A 11.0ns Diodes Incorporated Schottky diode .MODEL DI_B140HW B140HW B140HW B140HW D ( IS=123n *SRC=SBG3060CT SBG3060CT SBG3060CT SBG3060CT;DI_SBG3060CT SBG3060CT SBG3060CT SBG3060CT;Diodes;Si; 60.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual
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Diodes, Inc. 04/09/2012 53.54 Kb TXT spicemodels_diodes_schottky-sbr-rectifiers.txt
;DI_SBR20A200CTB SBR20A200CTB SBR20A200CTB SBR20A200CTB;Diodes;Si; 200V 20.0A 20.0ns Diodes INC Schottky rectifier .MODEL DI_SBR20A200CTB SBR20A200CTB SBR20A200CTB SBR20A200CTB D N=3.28 TT=43.2n ) *SRC=SBR2A30P1 SBR2A30P1 SBR2A30P1 SBR2A30P1;DI_SBR2A30P1 SBR2A30P1 SBR2A30P1 SBR2A30P1;Diodes;Si; 30.0V 2.00A 12.0ns Diodes INC Schottky ) *SRC=SBR2A40P1 SBR2A40P1 SBR2A40P1 SBR2A40P1;DI_SBR2A40P1 SBR2A40P1 SBR2A40P1 SBR2A40P1;Diodes;Si; 40.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2A40P1 SBR2A40P1 SBR2A40P1 SBR2A40P1 ;DI_SBR2M30P1 SBR2M30P1 SBR2M30P1 SBR2M30P1;Diodes;Si; 30.0V 2.00A 12.0ns Diodes INC Schottky rectifier .MODEL DI_SBR2M30P1 SBR2M30P1 SBR2M30P1 SBR2M30P1 D Diodes Incorporated Schottky diode .MODEL DI_B140HW B140HW B140HW B140HW D ( IS=123n RS=66.4m BV=40.0 IBV=40.0u + CJO=119p
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Diodes, Inc. 13/10/2012 54.36 Kb TXT diodes_schottky-sbr-rectifiers.txt
Schottky Diode 06-25-1993 * *SRC=ERA83004 ERA83004 ERA83004 ERA83004;ERA83004 ERA83004 ERA83004 ERA83004;Diodes;Schottky;45V 1A .MODEL ERA83004 ERA83004 ERA83004 ERA83004 D Schottky Diode 06-25-1993 * *SRC=ERA83006 ERA83006 ERA83006 ERA83006;ERA83006 ERA83006 ERA83006 ERA83006;Diodes;Schottky;60V 1A .MODEL ERA83006 ERA83006 ERA83006 ERA83006 D Amp Schottky Diode 06-25-1993 * *SRC=ERA85009 ERA85009 ERA85009 ERA85009;ERA85009 ERA85009 ERA85009 ERA85009;Diodes;Schottky;90V 1A .MODEL 90 Volt 1 Amp Schottky Diode 06-26-1993 * *SRC=ERB83004 ERB83004 ERB83004 ERB83004;ERB83004 ERB83004 ERB83004 ERB83004;Diodes;Schottky;45V EG=.69 TT=72P) * Fuji 45 Volt 2 Amp Schottky Diode 06-29-1993 * *SRC=ERB83006 ERB83006 ERB83006 ERB83006;ERB83006 ERB83006 ERB83006 ERB83006
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Spice Models 18/04/2010 70.9 Kb LIB diode3.lib
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