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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

DIODE 0A91

Catalog Datasheet MFG & Type PDF Document Tags

DIODE 0A91

Abstract: 0A91 0A91 J\_ POINT CONTACT DIODE Germanium diode in all-glass DO-7 envelope intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage VR max. 90 V Repetitive peak reverse voltage vrrm max. 115 V Forward current (d.c.) if max. 50 mA Repetitive peak forward current 'frm max. 150 mA , . 190 mA 60 to 450 /¿A 2 June 1979 Point contact diode OA91 0A91 2 June 1979 , . ] | June 1979 0A91 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134
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DIODE 0A91

Abstract: Germanium Diode OA91 OA91 GERMANIUM DIODE Germanium diode in subminiature all glass DO-7 construction for general purposes. MECHANICAL DATA DO-7 jj Dimensions in mm K rollâ'" not tinned 2*»w* TL 25.41"1" 7.6" 2 max T f\ 25.4mir mln. mounting width 13 The coloured band indicates the cathode side RATBAGS (Limiting values according to the Absolute Maximum System as defined in IEC publication 134) Average , 260 MA typ. 75 typ. 190 JUA 10 to 275 60 to 450 M 2 March 1968 0A91 2 March 1968 OA 91
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sx3704

Abstract: BRC157 river 300mW . Base A8A21 D3 I D4 . Base D Zener Diode AF26 , D10 S ilicon D iode Varicap Diode 9 Double S ilicon Diode Varicap Diode , Germanium Diode S ilicon Diode D15 S ilicon Diode V D12 S ilicon Diode Germanium Diode , D iode S6M1 10D2 1N2070 TV6 10 D16 D24 D20 S ilicon Diode / BY127 BY238 , ) Diode CLASSIFIED 1S44 BA128 BA154 w 1N4148 v ITT44 U35063/2 / Germanium Gold-Bonded
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sx3704 BRC157 Germanium Diode aa143 BRC-116 1n4148 ITT TRANSISTOR BC147 VT701 R2540 VT702 1N4005 BZX83-C30 BZX79-C30

DIODE 0A91

Abstract: 4ASS452 © Peak Diode Recovery dv/dt ® Junction and Storage Temperature Range Soldering Temperature, for 10 , Diode) Pulsed Source Current (Body Diode) © Diode Forward Voltage Reverse Recovery Time Reverse , C onditions D MOSFET symbol showing the / integral reverse p â'˜ p-n junction diode. v â , , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage MfiSSl 4S2 0022331 S30 , Circuit 150 IOR IRL630S Peak Diode Recovery dv/dt Test Circuit Fig 14. For N-Channel HEXFETS
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4ASS452 DIODE 0A91 SMD-220 4AS5452 43S54S2 0D223T5

FD6666 diode

Abstract: diode BY100 DIODE AND RECTI FJER EQUIVALENTS AND SUBSTITUTES A2K4/5 A2K9 A4/10 A5/2-4 A5/5 A5/6 A5/62 A5/105 , IN2381 IN3065 IN914 IN916 , IN3071 OA74, GEX44 OA73, GEX37 CG4E, 0A91, GEX23 OA5 OA10 BYZ11 AAY12 1N723A , 0A91 0A211 BYY22 32 CV8954 CV8964 CV8992 CV9018 CV9041 C V 908 6 CV9102 CV9112 CV9135 > CV9146 C V 914 , OA95. 0A91. 0A91. OA95. 40 M6100 MA23A-C MA51A MA125 MC19 MC22 MC51 M05D/1 MR21/31 MR41 MR1120 MR1121 , 5 0A7 0A 9 OAIO 0A21 OA30 0A31 OA45 OA47 OA48/9 OA50 to 58 0A91. AA119. AA119. BY 126. BAV20, BAX
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FD6666 diode diode BY100 1N4Q07 BY164 1N82 BA100 diode A1000 AA100 AA110 AA111 AA112 AA113

BA100 diode

Abstract: BA102 DIODE AND RECT1FJER EQUIVALENTS AND SUBSTITUTES A2K4/5 A2K9 A4/10 A5/2-4 A5/5 A5/6 A5/62 A5/105 , 1N3071 OA74, GEX44 OA73, GEX37 CG4E, 0A91, GEX23 0A5 OA10 BYZ11 ' AAY12 1N723A 13P2 19P2 1N28 1N69 1N10 , BYZ13 ! 1N2492 OA95 1N643 BYZ14 BYZ15 BA110 BYZ12 . 1N816W 1N21E > 1N914 1N3256 OA47 0A91 0A211 BYY22 32 , AA113, OA81-8B-91-95. AA119, OA79. OA70-73-90, 1N87A. 0A81-85-91-95, 1N618. 0A91 -95-181, 1N618. OA85 , /9 OA50 to 58 0A91. A A 119. J ' , AA119. n BY 126. BAVaO/teAXie, BAY45. BAX12. BAY46. BAX 12. BA145
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1N4004 BA102 B2M1-5 PH1021 OA210 diode GAZ17 1N1695 AA114 AA115 AA116 AA117 AA118 AA120

CD 5888 cb

Abstract: diode 0A81 amplification section. The power supply section consists of a diode, used to protect the system from input , the amplification section. The power supply section consists of a diode, used to protect the system , volts span out of U1C pin 8 with a 20 mV differential from the sensor. Diode D2 is used to protect the , 0A83 0A85 0A87 0A89 0A8B 0A8D 0A8F 0A91 0A94 0A97 0A99 0A9B 0A9D 0A9F 0AA1 0AA3 0AA5
Freescale Semiconductor
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AN1315 MPX2000 DEVB158 CD 5888 cb diode 0A81 sensor specific amplifier MPX2200 diode 0a47 mepco centralab capacitor MC34064P5

diode 0A81

Abstract: DIODE 0A91 amplification section. The power supply section consists of a diode, used to protect the system from input , amplification section. The power supply section consists of a diode, used to protect the system from input , still provide the 4 volts span out of U1C pin 8 with a 20 mV differential from the sensor. Diode D2 is , $080A,X #$80 $57 $58 $0AD0 { 0A74 0A76 0A77 0A7A 0A7C 0A7F 0A81 0A83 0A85 0A87 0A89 0A8B 0A8D 0A8F 0A91
Freescale Semiconductor
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0a81 point contact diode u1d diode DIODE 0A85 MC34064P-5 diode 0A70 mpx2010dp

DIODE 0A91

Abstract: 08AF sections are the power supply and the amplification section. The power supply section consists of a diode , out of U1C pin 8 with a 20 mV differential from the sensor. Diode D2 is used to protect the , 0A74 0A76 0A77 0A7A 0A7C 0A7F 0A81 0A83 0A85 0A87 0A89 0A8B 0A8D 0A8F 0A91 0A94 0A97 0A99 0A9B 0A9D
Motorola
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08AF motorola u1d diode lcd5657 0B68 XC68HC705

CD 5888 cb

Abstract: CD 5888 CB datasheet amplification section. The power supply section consists of a diode, used to protect the system from input , differential from the sensor. Diode D2 is used to protect the microprocessor's A/D input if the output from , 0A81 0A83 0A85 0A87 0A89 0A8B 0A8D 0A8F 0A91 0A94 0A97 0A99 0A9B 0A9D 0A9F 0AA1 0AA3
Motorola
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CD 5888 CB datasheet CD 5888 MEPCO project sensor mpx2200 Nippon capacitors MPX2050 AN1315/D

DIODE OA85

Abstract: OA85 diode supply and the amplification section. The power supply section consists of a diode, used to protect the , still provide the 4 volts span out of U1C pin 8 with a 20 mV differential from the sensor. Diode D2 is , 0A72 22 5C 0A74 0A76 0A77 0A7A 0A7C 0A7F 0A81 0A83 OA85 0A87 0A89 0A8B 0A8D 0A8F 0A91 0A94 0A97 0A99
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DIODE OA85 OA85 diode KPX2700 S080B obd2 RPE123Z5U105M050V PX2000 X1P00

CD 5888 CB

Abstract: XC68HC705 supply section consists of a diode, used to protect the system from input voltage reversal, and two fixed , out of U1C pin 8 with a 20 mV differential from the sensor. Diode D2 is used to protect the , 0A81 0A83 0A85 0A87 0A89 0A8B 0A8D 0A8F 0A91 0A94 0A97 0A99 0A9B 0A9D 0A9F 0AA1 0AA3 0AA5 0AA7 0AA9
Motorola
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MPX2200 089A 0B27 09e-4 0A4B Centralab

CD 5888 CB

Abstract: 0B94 amplification section. The power supply section consists of a diode, used to protect the system from input , differential from the sensor. Diode D2 is used to protect the microprocessor's A/D input if the output from , 0A81 0A83 0A85 0A87 0A89 0A8B 0A8D 0A8F 0A91 0A94 0A97 0A99 0A9B 0A9D 0A9F 0AA1 0AA3
Motorola
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0B94 MPX2700 centralab cap MC33274P MPX2010 MPX2100

CD 5888 cb

Abstract: sensor specific amplifier MPX2200 section. The power supply section consists of a diode, used to protect the system from input voltage , volts span out of U1C pin 8 with a 20 mV differential from the sensor. Diode D2 is used to protect the , 0A85 0A87 0A89 0A8B 0A8D 0A8F 0A91 0A94 0A97 0A99 0A9B 0A9D 0A9F 0AA1 0AA3 0AA5 0AA7
Motorola
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09c7 0918 158 DIODE MOTOROLA B34 L 0946 Mepco-Centralab 0B37

00689A

Abstract: project pic 16f84 LED Flashing charging. Diodes D9-D12 allow application of any voltage polarity. Zener diode ZD2 is not the voltage , not safely in their places! Zener diode ZD2 will reduce the voltage to 6.8V, but avoid testing the , silicon PNP in SOT-54, pinning CBE)3 pinning CBE)2 Diodes: 1N4148 (or any small signal silicon diode)12 ZPD 6V8 (or any low power 6.8V zener diode)1 ZPD 3V3 (or any low power 3.3V zener diode)1
Microchip Technology
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00689A project pic 16f84 LED Flashing DOT matrix LED display using PIC16f84A DOT matrix LED display full using PIC16f84A led display drive pic16f84a ic PIC16F84A Free Projects of LED AN689 PIC16F84A 11F-3 DK-2750 D-81739

ZPD 3V3

Abstract: PIC16F84A LED switch debouncing charging. Diodes D9-D12 allow application of any voltage polarity. Zener diode ZD2 is not the voltage , not safely in their places! Zener diode ZD2 will reduce the voltage to 6.8V, but avoid testing the , silicon PNP in SOT-54, pinning CBE)3 pinning CBE)2 Diodes: 1N4148 (or any small signal silicon diode)12 ZPD 6V8 (or any low power 6.8V zener diode)1 ZPD 3V3 (or any low power 3.3V zener diode)1
Microchip Technology
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ZPD 3V3 PIC16F84A LED switch debouncing diode zener zpd 3v3 ZPD ITT ITT ZPD 7.5 BY304 QS-9000

axial zener diodes marking code c3v6

Abstract: ZENER DIODES CODE ID CHART AND SCR»s (Contd)° DEVICE TYPE SFD* 104 (0A90) SFD. 108 (0A91) SFDo 122 (0A47) SFD 3 118A IN
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axial zener diodes marking code c3v6 ZENER DIODES CODE ID CHART H 48 zener diode diode zener ph c5v6 diode zener BZX 61 C 10 74151N BR705A BR71A BR72A BR74A BR76A BR78A

IN3492

Abstract: sg 4001 diode .2 1 .1 * 0A91 115 .1 5 3 .3 275 G GP 0A95 115 .1 5 2 .6 250 G , S 2 5 ° C DIODE 1N38B 1N39A 1N39B 1NA3 1NAA INA 5 1NA6 1NA7 1NA8A 1N57A IN 5A A , A 125 125 0 .6 300 G 300 G NIAX VALUES 0 25 ° DIODE 1NI1B 1N 118 A 1N 126 1N , VALUES e 2 5 ° DIODE 1N 298A Vw 35 PRV If Vf 50 20 1 .5 50 Ir 5000 20 , 9 9 7 , 1N207 u T Y MAX VAI UES â'¢ 2 5 ° DIODE 1N 252 1N 253 1N 2 5 3 J a N 1n 2 5 5
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IN3492 sg 4001 diode 1NA4 diode 1n6 md914 1N20b DA200 0A202 1N34A 1N34AL PR9163 PR9163R

GFB7400D

Abstract: EF184 diodes Silicon picoampere diode Fast recovery low power rectifier diodes Low power silicon rectifier , BZY88CBV2 8ZY88C15 GEM3 GEM4 0A91 BZY88C3V3 BZY8BC3V6 BZY8BC3V9 B2Y88C4V3 BZY88C9V1 82Y88C10
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GFB7400D EF184 Rifa pmr 2026 ITT A2610 Mullard Mullard quick reference guide RIFA 0,022 pme 285 250v
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