DG3537/3538/3539/3540 DG3537 DG3538 DG3539 DG3540 DG3537DB-T5-E1 DG3538DB-T5-E1

Vishay Siliconix New Product 4-, 360-MHz, Dual SPST Analog Switches DESCRIPTION FEATURES The DG3537/3538/3539/3540 are dual SPST

DG3537/3538/3539/3540 DG3537/3538/3539/3540 Vishay Siliconix New Product 4-, 360-MHz, Dual SPST Analog Switches DESCRIPTION FEATURES The DG3537/3538/3539/3540 DG3537/3538/3539/3540 are dual SPST analog switches which operate from 1.8 V to 5.5 V single rail power supply. They are design for audio, video, and USB switching applications. The devices have 4 on-resistance and 360 MHz 3dB bandwidth. 0.2 on-resistance matching and 1 flatness make the device high linearity. The devices are 1.6 V logic compatible within the full operation voltage range. These switches are built on a sub-micron high density process that brings low power consumption and low voltage performance. The switches are packaged in MICRO FOOT chip scale package of 3 x 3 bump array. · · · · · · 1.8 V to 5.5 V Operation 3 at 2.7 V rON 360 MHz - 3 dB Bandwidth ESD Method 3015.7 > 2 kV Latch-Up Current 0.300 mA (JESD 78) 1.6 V Logic Compatible RoHS COMPLIANT BENEFITS · · · · · As a committed partner to the community and environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For MICRO FOOT analog switch products manufactured with tin/silver/copper (SnAgCu) device termination, the lead (Pb)-free "-E1" suffix is being used as a designator. Space Saving MICRO FOOT® Package High Linearity Low Power Consumption High Bandwidth Full Rail Signal Swing Range APPLICATIONS · · · · · · Cellular Phones MP3 Media Players Modems Hard Drives PCMCIA FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG3537 DG3537 MICRO FOOT 8-Bump 1 2 3 V+ A IN2 GND NO2 Device Marking IN1 NO1 COM1 NO2 COM2 IN2 B COM1 C NO1 COM2 V+ Top View Bumps Down IN1 A1 Locator XXX 3537 3537 = Device Marking xxx = Data/Lot Traceability Code GND Document Number: 73320 S-60672-Rev. B, 01-May-06 www.vishay.com 1 DG3537/3538/3539/3540 DG3537/3538/3539/3540 Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG3538 DG3538 MICRO FOOT 8-Bump 1 2 3 V+ A IN2 GND B COM1 C NC1 NC2 Device Marking IN1 A1 Locator COM1 NC1 COM2 XXX 3538 COM2 NC2 V+ IN1 3538 = Device Marking IN2 Top View Bumps Down xxx = Data/Lot Traceability Code GND DG3539 DG3539 MICRO FOOT 8-Bump 1 2 3 V+ A IN2 GND B COM1 C NO1 NC2 Device Marking IN1 A1 Locator COM1 NO1 COM2 XXX 3539 COM2 NC2 V+ IN1 3539 = Device Marking IN2 Top View Bumps Down xxx = Data/Lot Traceability Code GND DG3540 DG3540 MICRO FOOT 8-Bump 1 2 3 A IN1 V+ NO1 B COM2 C NO2 V+ Device Marking IN1 A1 Locator NO1 COM1 NO2 COM2 COM1 GND XXX 3540 IN2 3540 = Device Marking IN2 Top View Bumps Down xxx = Data/Lot Traceability Code GND TRUTH TABLE ORDERING INFORMATION Logic NC1 and NC2 NO1 and NO2 0 ON OFF 1 OFF ON www.vishay.com 2 Temp Range - 40 to 85 °C Package Part Number MICRO FOOT: 8 Bump (3 x 3, 0.5 mm Pitch, 238 µm Bump Height) DG3537DB-T5-E1 DG3537DB-T5-E1 DG3538DB-T5-E1 DG3538DB-T5-E1 DG3539DB-T5-E1 DG3539DB-T5-E1 DG3540DB-T1-E1 DG3540DB-T1-E1 Document Number: 73320 S-60672-Rev. B, 01-May-06 DG3537/3538/3539/3540 DG3537/3538/3539/3540 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Symbol Limit Reference V+ to GND Unit - 0.3 to + 6 IN, COM, NC, NOa V - 0.3 to (V+ + 0.3 V) Continuous Current (NO, NC, COM) ± 100 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 200 Storage Temperature (D Suffix) b mA - 65 to 150 °C IR/Convection 250 >2 Package Solder Reflow Conditions kV MICRO FOOT: 8 Bump (3 x 3 mm)d 400 mW ESD per Method 3015.7 Power Dissipation (Packages)c Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. Refer to IPC/JEDEC (J-STD-020B J-STD-020B) c. All bumps welded or soldered to PC Board. d. Derate 5.0 mW/°C above 70 °C. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 2.7 to 3.6 V, VIN = 0.5 V or 1.4 Ve Limits - 40 to 85 °C Tempa Minb Typc Unit Maxb Analog Switch VNO, VNC, VCOM On-Resistanced Room Full 3 4 4.3 Room 0.75 1.2 rON Flatness rON Flatnessd On-Resistance V+ = 2.7 V, VCOM = 0.2/1.5 V INO, INC = 10 mA rDS(on) Match Between Channelsd Switch Off Leakage Current Full rON Analog Signal Ranged f INO(off) INC(off) ICOM(off) Channel-On Leakage Currentf ICOM(on) 0 V+ Room V+ = 3.6 V, VNO, VNC = 0.3 V/3.3 V, VCOM = 3.3 V/0.3 V V+ = 3.6 V, VNO, VNC = VCOM = 0.3 V/3.3 V V 0.25 Room Full -2 - 20 2 20 Room Full -2 - 20 2 20 Room Full -2 - 20 2 20 1.4 nA Digital Control Input High Voltaged VINH Full Input Low Voltage VINL Full Input Capacitance f Input Current Document Number: 73320 S-60672-Rev. B, 01-May-06 Cin IINL or IINH 0.5 Full VIN = 0 or V+ Full 8 1 V pF 1 µA www.vishay.com 3 DG3537/3538/3539/3540 DG3537/3538/3539/3540 Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 2.7 to 3.6 V, VIN = 0.5 V or 1.4 Ve Limits - 40 to 85 °C Tempa Minb Unit Typc Maxb Room Full 16 46 48 Room Full 7 37 39 Room 1 Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK d OIRR Off-Isolation Crosstalkd XTALK CL = 1 nF, VGEN = 2 V, RGEN = 0 RL = 50 , CL = 5 pF, f = 1 MHz RL = 50 , CL = 5 pF, f = 10 MHz Room - 58 Room - 66 Room Room 14 Room 27 Room 27 Room Full 0.001 dB 8 CCOM(off) d pC - 113 Room ns - 78.5 Room CNO/NC(off) Off Capacitanced Channel-On Capacitance V+ = 2.7 V, VNO or VNC = 1.5 V RL = 300 , CL = 35 pF CNO/NC(on) VIN = 0 or V+, f = 1 MHz CCOM(on) pF Power Supply Power Supply Current www.vishay.com 4 I+ VIN = 0 or V+ 1.0 1.0 µA Document Number: 73320 S-60672-Rev. B, 01-May-06 DG3537/3538/3539/3540 DG3537/3538/3539/3540 Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 4.2 to 5.5 V, VIN = 0.8 V or 2.0 Ve Limits - 40 to 85 °C a Temp Minb Typc Unit Maxb Analog Switch Analog Signal Ranged On-Resistanced rON Flatnessd On-Resistance Match Between Channelsd Switch Off Leakage Current VNO, VNC, VCOM Full rON Room Full 2.6 3.5 3.7 Room 0.8 1.2 rON Flatness rDS(on) INO(off) INC(off) ICOM(off) Channel-On Leakage Current V+ = 4.2 V, VCOM = 0.5/3.5 V INO, INC = 10 mA ICOM(on) 0 V+ Room V+ = 5.5 V, VNO, VNC = 1.0 V/4.5 V, VCOM = 4.5 V/1.0 V V+ = 5.5 V, VNO, VNC = VCOM = 1.0 V/4.5 V V 0.2 Room Full -2 - 20 2 20 Room Full -2 - 20 2 20 Room Full -2 - 20 2 20 2.0 nA Digital Control Input High Voltaged VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Cin IINL or IINH 0.8 Full VIN = 0 or V+ Full 8 1 V pF 1 µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injectiond Off Capacitanced Channel-On Capacitanced QINJ CCOM(off) CNO/NC(on) VIN = 0 or V+, f = 1 MHz CCOM(on) 11 41 43 Room Full 7 37 39 Room 1 8 Room 14 Room 28 Room CL = 1 nF, VGEN = 2 V, RGEN = 0 CNO/NC(off) Room Full Room V+ = 4.2 V, VNO or VNC = 3.0 V RL = 300 , CL = 35 pF 28 Room Full 0.001 ns pC pF Power Supply Power Supply Current I+ VIN = 0 or V+ 1.0 1.0 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Document Number: 73320 S-60672-Rev. B, 01-May-06 www.vishay.com 5 DG3537/3538/3539/3540 DG3537/3538/3539/3540 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 6.0 T = 25 °C IS = 10 mA V+ = 1.8 V 5.5 5.0 V+ = 2.0 V r ON - On-Resistance () 4.5 4.0 V+ = 2.7 V V+ = 3.0 V V+ = 3.6 V V+ = 4.2 V V+ = 5.0 V 3.5 3.0 2.5 2.0 1.5 V+ = 5.5 V 1.0 0.5 0.0 0 1 2 3 4 5 6 VCOM - Analog Voltage (V) rON vs. VCOM and Supply Voltage 4.0 5 V+ = 2.7 V IS = 10 mA 4 - 40 °C 85 °C r ON - On-Resistance () r ON - On-Resistance () V+ = 4.2 V IS = 10 mA 3.5 25 °C 3 2 1 - 40 °C 3.0 85 °C 2.5 25 °C 2.0 1.5 1.0 0.5 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 1 2 3 4 VCOM - Analog Voltage (V) rON vs. Analog Voltage and Temperature rON vs. Analog Voltage and Temperature 10 mA 100000 1 mA V+ = 3.0 V VIN = 0 V I+ - Supply Current (A) I+ - Supply Current (nA) 10000 5 VCOM - Analog Voltage (V) 1000 100 V+ = 3 V 100 µA 10 µA 1 µA 100 nA 10 nA 1 nA 10 - 60 100 pA - 40 - 20 0 20 40 60 80 Temperature (°C) Supply Current vs. Temperature www.vishay.com 6 100 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency Document Number: 73320 S-60672-Rev. B, 01-May-06 DG3537/3538/3539/3540 DG3537/3538/3539/3540 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 300 10000 250 V+ = 3.6 V INO(off) INC(off) ICOM(on) 100 ICOM(off) 150 Leakage Current (pA) 1000 Leakage Current (pA) V+ = 3.6 V 200 10 INO(off), INC(off) 100 ICOM(off) 50 0 ICOM(on) - 50 - 100 - 150 - 200 - 250 1 - 60 - 40 - 20 0 20 40 60 80 - 300 0.0 100 0.5 1.0 Temperature (°C) 2.0 2.5 20 tON V+ = 2 V - 10 Loss, OIRR, X TALK (dB) 16 14 12 tON V+ = 4.2 V 10 8 tOFF V+ = 2 V 6 tOFF V+ = 4.2 V 4.0 Loss - 20 - 30 - 40 - 50 OIRR - 60 - 70 XTA LK - 80 - 90 4 2 V+ = 3.0 V RL = 50 - 110 0 - 60 - 120 - 40 - 20 0 20 40 60 80 100 100 K 1M 10 M 100 M 1G Frequency (Hz) Temperature (°C) Switching Time vs. Temperature Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 10 2.00 8 1.75 6 Q - Charge Injection (pC) - Switching Threshold (V) 3.5 10 0 18 - 100 VT 3.0 Leakage vs. Analog Voltage Leakage Current vs. Temperature t ON / t OFF - Switching Time (ns) 1.5 VCOM, V NO, V NC - Analog Voltage (V) 1.50 1.25 1.00 0.75 0.50 4 V+ = 2.0 V 2 0 -2 -4 V+ = 5.0 V -6 0.25 V+ = 3.0 V -8 - 10 0.00 1 2 3 4 5 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage Document Number: 73320 S-60672-Rev. B, 01-May-06 6 0 1 2 3 4 5 VCOM - Analog Voltage (V) Charge Injection vs. Analog Voltage www.vishay.com 7 DG3537/3538/3539/3540 DG3537/3538/3539/3540 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ COM NO or NC Switch Input VINH tr < 5 ns tf < 5 ns 50 % VINL Switch Output VOUT 0.9 x V OUT IN Logic Input CL 35 pF RL 300 GND Switch Output 0V tOFF tON 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = VNOorNC RL R L + R ON Figure 1. Switching Time V+ VOUT VOUT Rgen V+ COM NC or NO IN VOUT On + IN Off On CL = 1 nF VIN = 0 - V+ Q = VOUT x CL GND IN depends on switch configuration: input polarity determined by sense of switch. Figure 2. Charge Injection V+ V+ 10 nF 10 nF V+ NC or NO V+ IN COM 0V, 2.4 V COM Meter COM IN 0 V, 2.4 V RL GND NC or NO GND Analyzer HP4192A HP4192A Impedance Analyzer or Equivalent f = 1 MHz VCOM Off Isolation = 20 log V NO/ NC Figure 3. Off-Isolation www.vishay.com 8 Figure 4. Channel Off/On Capacitance Document Number: 73320 S-60672-Rev. B, 01-May-06 DG3537/3538/3539/3540 DG3537/3538/3539/3540 Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 8 BUMP (3 X 3, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT) 8 x Ø 0.150 0.229 Note 2 Solder Mask Ø Pad Diameter + 0.1 Silicon 0.5 A2 A A1 Bump Note 1 0.5 2 3 Recommended Land Pattern 1 b Diameter A e Index-Bump A1 Note 3 B E e XXX 3540 C S S e e Top Side (Die Back) D Notes (Unless Otherwise Specified): 1. Bump is Lead (Pb)-free Sn/Ag/Cu. 2. Non-solder mask defined copper landing pad. 3. Laser Mark on silicon die back; back-lapped, no coating. Shown is not actual marking; sample only. Dim Millimeters* Inches Min Max Min Max A 0.688 0.753 0.0271 0.0296 A1 0.218 0.258 0.0086 0.0102 A2 0.470 0.495 0.0185 0.0195 b 0.306 0.346 0.0120 0.0136 D 1.480 1.520 0.0583 0.0598 E 1.480 1.520 0.0583 0.0598 e S 0.5 BASIC 0.230 0.270 0.0197 BASIC 0.0091 0.0106 * Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73320. Document Number: 73320 S-60672-Rev. B, 01-May-06 www.vishay.com 9