DFM1200EXM12-A000 DS5481-1 LN26170 IEC1287 - Datasheet Archive

 

Fast Recovery Diode Module DS5481-1.4 June 2008 (LN26170) FEATURES · Low Reverse Recovery Charge · High Switching

 

DFM1200EXM12-A000 DFM1200EXM12-A000 Fast Recovery Diode Module DS5481-1 DS5481-1.4 June 2008 (LN26170 LN26170) FEATURES · Low Reverse Recovery Charge · High Switching Speed · Low Forward Voltage Drop · VRRM VF IF IFM (typ) (max) (max) 1200V 1.9V 1200A 2400A Isolated Copper Base plate · KEY PARAMETERS Triple Diodes Can be paralleled for 3600A Rating · AlSiC Baseplate With AIN Substrates APPLICATIONS · Chopper Diodes · Boost and Buck Converters · Free-wheel Circuits · Snubber Circuit · Resonant Converters · Induction Heating · Multi-level Switch Inverters Fig. 1 Circuit diagram The DFM1200EXM12-A000 DFM1200EXM12-A000 is a triple 1200V, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: Outline type code: E (See package details for further information) DFM1200EXM12-A000 DFM1200EXM12-A000 Fig. 2 Package Note: When ordering, please use the whole part number. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1 /7 DFM1200EXM12-A000 DFM1200EXM12-A000 SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS ­ PER ARM Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol VRRM Parameter Test Conditions Max. Units Repetitive peak reverse voltage Tvj = 125°C 1200 V IF Forward current (per arm) DC, Tcase = 75°C, Tvj = 125°C 1200 A IFM Max. forward current Tcase =110°C, tp = 1ms 2400 A I2 t I2t value fuse current rating VR = 0, tP = 10ms, Tvj = 125°C 200 kA2s Pmax Maximum power dissipation Tcase = 25°C, Tvj = 125°C 7520 W Visol Isolation voltage ­ per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V QPD Partial discharge IEC1287 IEC1287, V1 = 1300V, V2 = 1000V, 50Hz RMS 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AIN AlSiC 32mm 20mm 350 Parameter Thermal resistance ­ diode (per arm) Test Conditions Continuous dissipation ­ Min. Typ. Max. Units - - 20 °C/kW - - 6 °C/kW junction to case Tj Thermal resistance ­ case to heatsink Mounting torque 5Nm (per module) Rth(c-h) (with mounting grease) - - - - 125 °C Storage temperature range - -40 - 125 °C Mounting ­ M6 - - 5 Nm Electrical connections ­ M8 Tstg Junction temperature - - 10 Nm Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 2 /7 DFM1200EXM12-A000 DFM1200EXM12-A000 SEMICONDUCTOR STATIC ELECTRICAL CHARACTERISTICS ­ PER ARM Tcase = 25°C unless stated otherwise. Parameter Symbol Test Conditions Min. Typ. Max. Units IRM Peak reverse current VR = 1200V, Tvj = 125°C - - 30 mA VF Forward voltage IF = 1200A - 1.9 2.2 V IF = 1200A, Tvj = 125°C - 2.1 2.4 V - - 20 - nH Test Conditions Min. Typ. Max. Units - - 15 - nH Test Conditions Min. Typ. Max. Units - 800 - A - 200 - µC VR = 600V - 80 - mJ Test Conditions Min. Typ. Max. Units - 920 - A - 300 - µC - 140 - mJ LM Inductance STATIC ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol LM Parameter Module Inductance (externally connected in parallel) DYNAMIC ELECTRICAL CHARACTERISTICS ­ PER ARM Tcase = 25°C unless stated otherwise. Parameter Symbol Irr Peak reverse recovery current Qrr Reverse recovery charge Erec Reverse recovery energy IF = 1200A, dIF/dt = 9000A/µs, Tcase = 125°C unless stated otherwise. Parameter Symbol Irr Peak reverse recovery current Qrr Reverse recovery charge Erec Reverse recovery energy IF = 1200A, dIF/dt = 8400A/µs, VR = 600V Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /7 DFM1200EXM12-A000 DFM1200EXM12-A000 SEMICONDUCTOR TYPICAL CHARACTERISTICS ­ PER ARM Transient thermal impedance, Zth (j-c) - (° C/kW ) 100 10 1 0.001 1 Ri (° C/KW) 0.8 ti (ms) 0.00663 0.01 2 2.74 1.43 0.1 Pulse width, tp - (s) 3 3.49 12.8 4 12.95 110.2 10 1 Fig.3 Diode typical forward characteristics Fig.4 Transient thermal impedance Fig.5 Power dissipation Fig.6 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 4 /7 DFM1200EXM12-A000 DFM1200EXM12-A000 SEMICONDUCTOR Fig.7 RBSOA Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /7 DFM1200EXM12-A000 DFM1200EXM12-A000 SEMICONDUCTOR PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1700g Module outline type code: E Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 6 /7 DFM1200EXM12-A000 DFM1200EXM12-A000 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Tel: +44(0)1522 500500 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION ­ NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 /7