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DDlflaS11

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Abstract: C ELECTRONICS INC TS »E~ibMS7SaS DDlflöS11] □ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK659 2SK659 DESCRIPTION The 2SK659 2SK659 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. PACKAGE DIMENSIONS in millimeter! (inches) FEATURES • 4 V Gate Drive - Logic level - • Low Rosion) • No Secondary Breakdown ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature. -55to+150°C Channel Temperature . 150 °C Maximum Maximum ... OCR Scan
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3 pages,
135.97 Kb

2SK659 TEXT
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Abstract: 3875081 G E SOLID STATE Standard Power MOSFETs _ Ol P^§3fl7saöl DDlflaS11] 1 0 1E 18329 IRF510 IRF510, IRF511 IRF511, IRF512 IRF512, IRF513 IRF513 Power MOS Field-Effect Transistors File Number 1573 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.5A and 4.0A, 60V-100V ros(on) = 0.6 fi and 0.8 O Features: ■ SOA is power-dissipation limited m Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device The IRF510 IRF510, IRF511 IRF511, IRF512 IRF512 ànd IRF513 IRF513 are n-channel ... OCR Scan
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6 pages,
167.41 Kb

1RF512 IRF 511 MOSfet IRF510 Irf510 mosfet circuit diagram IRF512 IRF513 power mosfet irf511 IRF510 MOSFET transistor irf510 IRFS10 IRF51G IRF511 IRFS12 TEXT
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