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Part : DDR3 1333 204P 1GB Supplier : ADLINK Technology Manufacturer : Avnet Stock : - Best Price : $24.6575 Price Each : $28.1250
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DDR31333

Catalog Datasheet MFG & Type PDF Document Tags

ati es1000 specification

Abstract: /L5638/E5645 processors Six memory sockets support DDR3-1066/ DDR3-1333* REG/ECC up to 48 GB maximum capacity (*DDR3-1333 is supported by Intel® 5600 series CPU only) Intel® 82599 10GbE controller , Six DDR3-1066/DDR3-1333* 240-pin RDIMM sockets, up to 48 GB *DDR3-1333 is supported by Intel 5600 , 10GbE Six DDR3-1333 RDIMM sockets 2 6U cPCI Blades Two Intel® Xeonâ"¢ L5638/L5618/L5518 , Indicators and Reset Optional AMC or on-board HDD Functional Diagram 4 DDR3-1333 RDIMM Intel® XeonÂ
Adlink Technology
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ati es1000 specification TCA-6105A/6155A L5518/L5638/E5645 10GBASE-KX4 L5638 6C/12T L5518

RDIMM

Abstract: backup size â'¢ Saves costs â'¢ Saves space Key Features & Specs â'¢ DDR3-1333 RDIMM 24mm height (1GB 1R x8, 2GB 1R x8) â'¢ DDR3-1333 RDIMM 30mm height (4GB 2R x8, 8GB 2R x8) â'¢ Fits standard 240 , survive multiple power glitches without losing protected data. Ordering Information DDR3-1333 Flash , 2R x8 DeviceType DDR3-1333 DDR3-1333 DDR3-1333 DDR3-1333 Top 133.35 11.00 24.00 11.50
Smart Modular Technologies
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RDIMM SGN72288FH8P6PH SGN72568FH8P0PH SGN72128FH8P0PH SGN72128FH8P6PH

DDR3-1333

Abstract: DDR2-1066 ASIC x128 bus, 12.8GB/s ASIC x128 bus, 21.6GB/s 256Mb GDDR3-1600 DDR3-1333 x64 bus , ASIC x32 bus, 6.4GB/s DDR3-1333 ASIC 256-512Mb GDDR3-1600 (x32) x32 bus, 5.4GB/s DDR3-1333 64MB/system 8GB/s ASIC x64 bus, 5.2GB/s 4.0GHz XDR x16 bus, 6.4GB/s DDR2-667 ASIC DDR2-1066 ASIC 512Mb DDR3-1333 (x16) DDR2-800 32MB/system 5GB/s 256Mb DDR2 (x16) DDR3-1333 512Mb XDR (x16 mode) 3.2GHz XDR MB/System GB/s x64 bus, 12.8GB/s
Elpida Memory
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DDR333 DDR400 J0428EA0 ASIC XDR Rambus 104-FBGA 256MB 16I/ODRAM6 400MH 500MH 600MH I/ODRSL200V

DDR3-1333

Abstract: DDR3 DIMM SPD JEDEC Memory Module Specifications KVR1333D3E9S/4GHB 4GB 2Rx8 512M x 72-Bit DDR3-1333 CL9 ECC 240 , document describes ValueRAM's 512M x 72-bit (4GB) 2Rx8 DDR3-1333 CL9 SDRAM (Synchronous DRAM) ECC memory module, based on eighteen 256Mx 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers and requires +1.5V. , Programmable Additive Latency: 0, CL - 2, or CL - 1 clock · Programmable CAS Write Latency(CWL) = 7(DDR3-1333
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DDR3 DIMM SPD JEDEC DDR3 DIMM SPD DDR3 DIMM 240 clock termination DDR3 SPD sensor DDR3 1333 2Rx8 ddr3 240-P 667MH 1333M VALUERAM0954-001
Abstract: KVR1333D3S4R9S/2GEF FEATURES: 2GB 1Rx4 256M x 72-Bit DDR3-1333 Registered w/ Parity CL9 240 , CL - 1 clock Programmable CAS Write Latency(CWL) = 7(DDR31333) 8-bit pre-fetch Burst Length: 8 , '¢ DESCRIPTION: This document describes ValueRAM's 256M x 72-bit (2GB) 1Rx4 DDR3-1333 Registered w/ Parity CL9 SDRAM (Synchronous DRAM) ECC memory module, based on eighteen 256M x 4-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM Kingston Technology
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VALUERAM0955-001
Abstract: Memory Module Specifications KHX1333C7AD3K2/8G 8GB (4GB 512M x 64-Bit x 2 pcs.) DDR3-1333 CL7 240 , a kit of two 512M x 64-bit (4GB) DDR3-1333 CL7 SDRAM (Synchronous DRAM), 2Rx8 memory modules, based , been tested to run at DDR3-1333 at a low latency timing of 7-7-7-20 at 1.65V.The SPD's are programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9. This 240-pin DIMM uses gold contact fingers. The , - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 Kingston Technology
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2.5 sata hdd pin out

Abstract: range of -25°C ~ +55°C 4 isolated RS-232/422/485 ports High performance DDR3-1333 2 GB DRAM onboard , Intel® CoreTM2 Duo SP9300 2.26 GHz processor or Intel® Celeron® M 723 1.2 GHz processor onboard DDR3-1333 , support,onboard 2 GB DDR3-1333 DRAM and 4-pin M12 10/100Mbps Ethernet tBOX320-852-FL-1.2G-DC Fanless , DDR3-1333 DRAM and 8-pin M12 10/100/1000Mbps Ethernet tBOX320-852-FL-1.2GFanless embedded system with Intel® Celeron® M 723 1.2 GHz processor, 4 COM, 4 USB, CF, dual HDD support, onboard DC-G 2 GB DDR3-1333
Axiomtek
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2.5 sata hdd pin out BOX320-852-FL EN45545 EN60950 EN50155 10/100/1000M 826K3101010E

DDR3-1866

Abstract: IS46TR (CL = 13) Frequency (max) -187F DDR3-1066 7-7-7 1.875 -533 -15G DDR3-1333 8-8-8 1.875 1.5 -666 -15H DDR3-1333 9-9-9 1.875 1.875 1.5 -666 -125J DDR3-1600 10-10-10 1.875 1.5 1.5 1.25 -800 , . 64Mx16 128Mx8 128Mx16 256Mx8 Speeds DDR3-1333, DDR3-1600, DDR3-1866 DDR3-1066, DDR3-1333, DDR3-1600, DDR3
Integrated Silicon Solution
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IS43TR16640A IS43TR16128A IS43TR82560A IS46TR IS43TR16640 DDR3 timing parameters 1866M

1333Mb

Abstract: Memory Module Specifications KVR1333D3S4R9S/4GI 4GB 1Rx4 512M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION This document describes ValueRAM's 512M x 72-bit (4GB) DDR3-1333 , module, based on eighteen 512M x 4-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers. The electrical and , Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit
Kingston Technology
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1333Mb VALUERAM01001-001

DDR3 DIMM SPD JEDEC

Abstract: Memory Module Specifications KVR1333D3Q8R9S/8G 8GB 4Rx8 1G x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION This document describes ValueRAM's 1G x 72-bit (8GB) DDR31333 CL9 SDRAM (Synchronous DRAM), registered w/parity, 4Rx8 ECC memory module, based on thirty-six 256M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9. This 240pin , : 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst
Kingston Technology
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VALUERAM0968-001

DDR3-1333

Abstract: DDR3 4G SPD Memory Module Specifications KVR1333D3S4R9S/4G 4GB 1Rx4 512M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION This document describes ValueRAM's 512M x 72-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), registered w/ parity, 1Rx4 ECC memory module, based on eighteen 512M x 4-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 , Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8
Kingston Technology
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DDR3 4G SPD VALUERAM0979-001
Abstract: Memory Module Specifications KVR1333D3S8N9H/2G 2GB 1Rx8 256M x 64-Bit PC3-10600 CL9 240-Pin DIMM DESCRIPTION This document describes ValueRAM's 256M x 64-bit (2GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 256M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact , clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave Kingston Technology
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VALUERAM1020-001
Abstract: Features 3U cPCI Blades 2nd Generation Intel® Coreâ"¢ i7 quad/dual-core processor Supports DDR3-1333 , random vibration, 5-500Hz, each axis, operating Power Consumption Core i7-2655LE, 4GB DDR3-1333 SODIMM , Intel® i7-2655LE processor and 2x 2GB DDR3-1333, 2x GbE, VGA, 4x USB, Audio, KB/MS, COM, SATA, CF , DDR3-1333, 2x GbE, VGA, 4x USB, Audio, KB/MS, COM, SATA, CF cPCI-R3P00 8 HP Rear I/O module for , ) 3U CompactPCI® Blade with Intel® i7-2655LE processor and 2x 2GB DDR3-1333, 2x GbE, VGA, 4x USB Adlink Technology
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PCI-3970 PCI-3970D PCI-3970G 7-2715QE 7-2655LE 7-2610UE

Rambus XDR

Abstract: XDR Rambus , 8.0GB/s ASIC x128 bus, 12.8GB/s ASIC x128 bus, 21.6GB/s 256Mb GDDR3-1600 DDR3-1333 , ASIC 512Mb GDDR3-1600 ASIC ASIC DDR3-1333 ASIC 256-512Mb GDDR3-1600 (x32) x32 bus, 5.4GB/s DDR3-1333 Mid range 64MB/system 8GB/s ASIC x64 bus, 5.2GB/s 4.0GHz XDR x16 bus, 6.4GB/s DDR2-667 ASIC DDR2-1066 ASIC 512Mb DDR3-1333 (x16) DDR2-800 Low end 32MB/system 5GB/s 256Mb DDR2 (x16) DDR3-1333 512Mb XDR (x16 mode) 3.2GHz XDR
Elpida Memory
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Rambus XDR DDR2 x32 ELPIDA DDR3 XDR DRAM xdr elpida ELPIDA GDDR3 128MB/ 12GB/ 256-512M 64MB/ 32MB/ E0428EA0
Abstract: 72-bit (2GB) CL(IDD) 9 cycles DDR3-1333 CL9 SDRAM (Synchronous DRAM), registered w/ Row , -bit Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9. This 240- Row Active Time (tRASmin , - 1 clock â'¢ Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) â'¢ 8-bit pre-fetch Kingston Technology
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KVR1333D3S8R9S/2G VALUERAM0971-001
Abstract: Memory Module Specifications KHX1333C7AD3/4G 4GB 512M x 64-Bit DDR3-1333 CL7 240-Pin DIMM , on the SDRAM used. DESCRIPTION This document describes Kingston's 512M x 64-bit (4GB) DDR3-1333 , module has been tested to run at DDR3-1333 at a low latency timing of 7-7-7-20 at 1.65V.The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9. This 240-pin DIMM uses gold contact fingers , : 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Kingston Technology
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IT8718

Abstract: Intel® Coreâ"¢ i7-2655LE processor Up to 16GB DDR3-1333 memory in two DIMMs Supports real-time RTX , cPCI-6620 with Intel® Coreâ"¢ i7-2655LE Processor and 2x 2GB DDR3-1333, GbE x4, COM x2, DVI-D, USB x4, SATA cPCI-6620/847E/M2G 8HP cPCI-6620 with Intel® Celeron® Processor 847E and 2x1GB DDR3-1333 , ® Processor B810E and 2x 1GB DDR3-1333. GbE x4, COM x2, DVI-D, USB x4, SATA Contact your ADLINK , 3 axes, operating Power Consumption Celeron® Processor 847E, 1.10 GHz, 2GB DDR3-1333 memory
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IT8718 PCI-6620 PCI-6620/655L/M4G PCI-6620/847E/M2G PCI-6620/810E/M2G 10/100/1000BASE-T RS-232

ddr3-1333

Abstract: Memory Module Specifications KVR1333D3S8R9S/2GI 2GB 1Rx8 256M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION This document describes ValueRAM's 256M x 72-bit (2GB) DDR3-1333 , module, based on nine 256M x 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR31333 timing of 9-9-9. This 240-pin DIMM uses gold contact fingers. The electrical and , Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit
Kingston Technology
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VALUERAM0995-001

ddr3 4gb

Abstract: Memory Module Specifications KHX1333C9D3B1/4G 4GB 512M x 64-Bit DDR3-1333 CL9 240-Pin DIMM SPECIFICATIONS CL(IDD) Row Cycle Time (tRCmin) Refresh to Active/Refresh Command Time (tRFCmin) Row Active Time , on the SDRAM used. DESCRIPTION This document describes Kingston's 512M x 64-bit (4GB) DDR3-1333 , SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9. This 240-pin DIMM uses gold , Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8
Kingston Technology
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ddr3 4gb
Abstract: 's KVR1333D3N9K3/6G is a kit of three 256M x 64bit (2GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8 memory modules, based on sixteen 128M x 8-bit DDR3-1333 FBGA components per module. Total kit capacity is 6GB. The SPD's are programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. Each 240 , Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit Kingston Technology
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VALUERAM0722-001

H5TC8G83AMR-PBA

Abstract: HMT351U7EFR8C-PB ASIC x128 bus, 12.8GB/s ASIC x128 bus, 21.6GB/s 256Mb GDDR3-1600 DDR3-1333 x64 bus , ASIC x32 bus, 6.4GB/s DDR3-1333 ASIC 256-512Mb GDDR3-1600 (x32) x32 bus, 5.4GB/s DDR3-1333 64MB/system 8GB/s ASIC x64 bus, 5.2GB/s 4.0GHz XDR x16 bus, 6.4GB/s DDR2-667 ASIC DDR2-1066 ASIC 512Mb DDR3-1333 (x16) DDR2-800 32MB/system 5GB/s 256Mb DDR2 (x16) DDR3-1333 512Mb XDR (x16 mode) 3.2GHz XDR MB/System GB/s x64 bus, 12.8GB/s
SK Hynix
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H5TC8G83AMR-PBA HMT351U7EFR8C-PB H5TQ2G83EFR-RDC H5TQ2G83CFR-PBC H5TQ2G83EFR-PBC H5TQ2G83CFR-H9C H5TQ2G83EFR-H9C H5TQ2G63FFR-RDC
Abstract: KVR1333D3S4R9S/2GEF FEATURES: 2GB 1Rx4 256M x 72-Bit DDR3-1333 Registered w/ Parity CL9 240 , CL - 1 clock Programmable CAS Write Latency(CWL) = 7(DDR31333) 8-bit pre-fetch Burst Length: 8 , '¢ DESCRIPTION: This document describes ValueRAM's 256M x 72-bit (2GB) 1Rx4 DDR3-1333 Registered w/ Parity CL9 SDRAM (Synchronous DRAM) ECC memory module, based on eighteen 256M x 4-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM Virtium
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VL43B2863A-H0S-G9S-K9S 128MX72 VL43B2863A PC3-12800 A10/AP A12/BC

pinout DDR3-1333

Abstract: 97A8 204PIN DDR3 1333 SO-DIMM 4096MB With 256Mx8 CL9 TS512MSK64V3N Description Placement The TS512MSK64V3N is a 512M x 64bits DDR3-1333 SO-DIMM. The TS512MSK64V3N consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS512MSK64V3N is a Dual In-Line Memory Module D and is intended for mounting into 204-pin edge connector B A , , J PCB: 09-2842 CL-2 or CL-1 clock â'¢ Programmable /CAS Write Latency (CWL) = 7 (DDR3-1333
Virtium
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pinout DDR3-1333 97A8 ddr3 1333 00TYP 15TYP 45TYP 60TYP 55TYP
Abstract: 204PIN DDR3 1333 SO-DIMM TS512MSK64V3N-I 2Rank 4GB With 256Mx8 CL9 Description Placement The TS512MSK64V3N-I is a 512M x 64bits DDR3-1333 2Rank SO-DIMM. The TS512MSK64V3N-I consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit D board. The TS512MSK64V3N-I is a Dual In-Line Memory Module and is intended for mounting , Write Latency (CWL) = 7 (DDR3-1333) â'¢ 8 bit pre-fetch Burst Length: 4, 8 â Transcend Information
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667MHZ

TS512MSK64V3N-I

Abstract: 204PIN DDR3 1333 SO-DIMM JM1333KSN-2G 2048MB With 256Mx8 CL9 Description Placement The JM1333KSN-2G is a 256M x 64bits DDR3-1333 SO-DIMM. The JM1333KSN-2G consists of 8pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. D The JM1333KSN-2G is a Dual In-Line Memory Module and is intended for mounting into , Write Latency (CWL) =7 (DDR3-1333) â'¢ 8 bit pre-fetch Burst Length: 4, 8 â
Transcend Information
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Abstract: 204PIN DDR3 1333 SO-DIMM TS128MSK64V3U-I 1Rank 1GB With 128Mx8 CL9 Description Placement The TS128MSK64V3U-I is a 128M x 64bits DDR3-1333 1Rank SO-DIMM. The TS128MSK64V3U-I consists of 8pcs 128Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit D board. The TS128MSK64V3U-I is a Dual In-Line Memory Module and is intended for mounting , Write Latency (CWL) = 7 (DDR3-1333) â'¢ 8 bit pre-fetch Burst Length: 4, 8 â Transcend Information
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Abstract: kit RAM Module, Flash Disk, and 2.5" Hard Disk Drive Part Number Description 99G06-010871 1GB DDR3-1333, 128M x 8bits SODIMM, Industrial Grade, 0°C~85°C, Transcend 99G06-01096K 1GB DDR3-1333, 128M x 8bits SODIMM, Industrial Grade, 0°C~85°C, Memoright 99G06-010901 2GB DDR3-1333, 256M x 8bits SODIMM, Industrial Grade, 0°C~85°C, Transcend 99G06-01097K 2GB DDR3-1333, 256M x 8bits SODIMM, Industrial Grade, 0°C~85°C, Memoright 99G06-010911 4GB DDR3-1333, 256M x 8bits SODIMM, Industrial Grade, 0°C~85°C, Transcend Transcend Information
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204 pin so-DIMM DDR3 connector

Abstract: micro USB Connector Female series processor supports DDR3-1333 with a peak of 21GB/s bandwidth. This is a 66% improvement in memory , 65W DDR3-1333 2-ch Registered ECC & Chipkill Two 16-lanes@2.2GHz Full Duplex Q3-10 41QS HE OE41QSOHU4DGOE 4 cores up to 2 sockets 2.5GHz L2 512K x4; L3 6MB 65W DDR3-1333 , OE41LEOHU4DGOE 4 cores up to 2 sockets 2.3GHz L2 512K x4; L3 6MB 65W DDR3-1333 2-ch Registered , up to 2 sockets 1.8GHz L2 512K x4; L3 6MB 40W DDR3-1333 2-ch Registered ECC &
VIA
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A1150 VX900H EMIO-1533-00A1 320GB POS-DLNXXI-ENS14 204 pin so-DIMM DDR3 connector micro USB Connector Female EMIO-5130-00A1 EPIA-P900 ATG-1150-1D10A3 EMIO-1530-80A1 EMIO-1530-90A1

AMD Opteron

Abstract: , 8.0GB/s ASIC x128 bus, 12.8GB/s ASIC x128 bus, 21.6GB/s 256Mb GDDR3-1600 DDR3-1333 , ASIC 512Mb GDDR3-1600 ASIC ASIC DDR3-1333 ASIC 256-512Mb GDDR3-1600 (x32) x32 bus, 5.4GB/s DDR3-1333 Mid range 64MB/system 8GB/s ASIC x64 bus, 5.2GB/s 4.0GHz XDR x16 bus, 6.4GB/s DDR2-667 ASIC DDR2-1066 ASIC 512Mb DDR3-1333 (x16) DDR2-800 Low end 32MB/system 5GB/s 256Mb DDR2 (x16) DDR3-1333 512Mb XDR (x16 mode) 3.2GHz XDR
Advanced Micro Devices
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AMD Opteron 21GB/ 25GB/ 41KXHE 6400MT/ 4800MT/ 48509B
Abstract: 204PIN DDR3 1333 SO-DIMM 1024MB With 128Mx8 CL9 TS128MSK64V3U Description Placement The TS128MSK64V3U is a 128M x 64bits DDR3-1333 SO-DIMM. The TS128MSK64V3U consists of 8pcs 128Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. D The TS128MSK64V3U is a Dual In-Line Memory Module B A and is intended for mounting into 204-pin edge connector , , PCB: 09-2820 CL-2 or CL-1 clock â'¢ Programmable /CAS Write Latency (CWL) = 7 (DDR3-1333) â Transcend Information
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TS256MSK64V3N-I
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