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1 - 14 of about 14 for DD15K |
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First line: DM01B 2N676 ft4017* D16P4* MA3232 SYMBOLS CODES EXPLAINED SYMBOLS CODES COMMON MORE THAN TECHNICAL SECTION LINE Type Revised Specificaions Non-JEDEC manufacured ouside U'S.A. TYPE Swiching ype, also lised Secion Chopper, also lised Secion Caegory These ypes also included elsewhere oher characerisics Abstract: .. 67 68 69 D16P3 D16P3 D16P4 D16P4 DD15K* 11 11 11 N N P-MOS Si Si L3e L3e TO 12 DM Darlington Amp. hFE-2.0k min;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V . Darlington Amp; hFE-7.0k-15k 0k-15k typ;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V .. Tags: MA3232 D16P4* ft4017* 2N676 DM01B datasheet abstract.. |
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First line: silicon epitaxial mesa diode microwave switch DM01B CA3036 L0NA DM02B SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 00 13d# 3.6m 175A 175A ^ L49y L49y L49y L49y L75 37 38 39 DD13K DD13K DD15K » DM01 DM01 B* 450m 450m 450m 450m 500m 500m 5.5 A 2.5A 6.OA 30 25 30 30 30 70 100m 100m 35m 30m 1 .On 20m 1 .On 500p 500p 5.On lOOf 10 5.0 15 10 5.0 15 9.0m 10m[Zl 5OOu0 14m 800uA 800uA 13p# 10p .. Tags: DM02B L0NA CA3036 DM01B silicon epitaxial mesa diode microwave switch datasheet abstract.. |
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First line: CA3036 BF123 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) Abstract: .. 67 68 69 D16P3 D16P3 D16P4 D16P4 DD15K* 11 11 11 N N P-MOS Si Si L3e L3e TO 12 DM Darlington Amp. hFE-2.0k min;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V . Darlington Amp; hFE-7.0k-15k 0k-15k typ;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V .. Tags: BF123 CA3036 datasheet abstract.. |
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First line: CA3036 NS1000 n SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Section Abstract: .. 67 68 69 D16P3 D16P3 D16P4 D16P4 DD15K* 11 11 11 N N P-MOS Si Si L3e L3e TO 12 DM Darlington Amp. hFE-2.0k min;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V . Darlington Amp; hFE-7.0k-15k 0k-15k typ;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V .. Tags: NS1000 n CA3036 datasheet abstract.. |
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First line: FV918 CA3036 L14B 2SC634 DM02B SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technic Abstract: .. 67 68 69 D16P3 D16P3 D16P4 D16P4 DD15K* 11 11 11 N N P-MOS Si Si L3e L3e TO 12 DM Darlington Amp. hFE-2.0k min;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V . Darlington Amp; hFE-7.0k-15k 0k-15k typ;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V .. Tags: DM02B 2SC634 L14B CA3036 FV918 datasheet abstract.. |
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First line: K1502 K1502* CA3036 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 67 68 69 D16P3 D16P3 D16P4 D16P4 DD15K* 11 11 11 N N P-MOS Si Si L3e L3e TO 12 DM Darlington Amp. hFE-2.0k min;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V . Darlington Amp; hFE-7.0k-15k 0k-15k typ;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V .. Tags: CA3036 K1502* K1502 datasheet abstract.. |
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First line: CA3036 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) avoid Abstract: .. 67 68 69 D16P3 D16P3 D16P4 D16P4 DD15K* 11 11 11 N N P-MOS Si Si L3e L3e TO 12 DM Darlington Amp. hFE-2.0k min;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V . Darlington Amp; hFE-7.0k-15k 0k-15k typ;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V .. Tags: CA3036 datasheet abstract.. |
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First line: CA3036 silicon epitaxial mesa diode microwave switch SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Typ Abstract: .. 67 68 69 D16P3 D16P3 D16P4 D16P4 DD15K* 11 11 11 N N P-MOS Si Si L3e L3e TO 12 DM Darlington Amp. hFE-2.0k min;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V . Darlington Amp; hFE-7.0k-15k 0k-15k typ;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V .. Tags: silicon epitaxial mesa diode microwave switch CA3036 datasheet abstract.. |
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First line: CA3036 ST25A 2N904 2N906 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Dat Abstract: .. 67 68 69 D16P3 D16P3 D16P4 D16P4 DD15K* 11 11 11 N N P-MOS Si Si L3e L3e TO 12 DM Darlington Amp. hFE-2.0k min;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V . Darlington Amp; hFE-7.0k-15k 0k-15k typ;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V .. Tags: 2N906 2N904 ST25A CA3036 datasheet abstract.. |
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First line: CA3036 2sa525 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) Abstract: .. 67 68 69 D16P3 D16P3 D16P4 D16P4 DD15K* 11 11 11 N N P-MOS Si Si L3e L3e TO 12 DM Darlington Amp. hFE-2.0k min;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V . Darlington Amp; hFE-7.0k-15k 0k-15k typ;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V .. Tags: 2sa525 CA3036 datasheet abstract.. |
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First line: CA3036 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 67 68 69 D16P3 D16P3 D16P4 D16P4 DD15K* 11 11 11 N N P-MOS Si Si L3e L3e TO 12 DM Darlington Amp. hFE-2.0k min;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V . Darlington Amp; hFE-7.0k-15k 0k-15k typ;Pt-320mW Pt-320mW ;Zin-650k Zin-650k ;BVCEO-20V BVCEO-20V .. Tags: CA3036 datasheet abstract.. |
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First line: 2N5417 2N3836 BD264A SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 00 13d# 3.6m 175A 175A ^ L49y L49y L49y L49y L75 37 38 39 DD13K DD13K DD15K » DM01 DM01 B* 450m 450m 450m 450m 500m 500m 5.5 A 2.5A 6.OA 30 25 30 30 30 70 100m 100m 35m 30m 1 .On 20m 1 .On 500p 500p 5.On lOOf 10 5.0 15 10 5.0 15 9.0m 10m[Zl 5OOu0 14m 800uA 800uA 13p# 10p .. Tags: BD264A 2N3836 2N5417 datasheet abstract.. |
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First line: 2N725 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 00 13d# 3.6m 175A 175A ^ L49y L49y L49y L49y L75 37 38 39 DD13K DD13K DD15K » DM01 DM01 B* 450m 450m 450m 450m 500m 500m 5.5 A 2.5A 6.OA 30 25 30 30 30 70 100m 100m 35m 30m 1 .On 20m 1 .On 500p 500p 5.On lOOf 10 5.0 15 10 5.0 15 9.0m 10m[Zl 5OOu0 14m 800uA 800uA 13p# 10p .. Tags: 2N725 datasheet abstract.. |
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First line: NS3041 ma7805 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 00 13d# 3.6m 175A 175A ^ L49y L49y L49y L49y L75 37 38 39 DD13K DD13K DD15K » DM01 DM01 B* 450m 450m 450m 450m 500m 500m 5.5 A 2.5A 6.OA 30 25 30 30 30 70 100m 100m 35m 30m 1 .On 20m 1 .On 500p 500p 5.On lOOf 10 5.0 15 10 5.0 15 9.0m 10m[Zl 5OOu0 14m 800uA 800uA 13p# 10p .. Tags: ma7805 NS3041 datasheet abstract.. |
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