| Fulltext Datasheet Results |
1 - 5 of about 5 for DD12J |
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First line: SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. .3m 2.3m 175J 175J 200J 200J 200J 200J DPL* P P T072 T072 T018 T018 TO 18 DM DA0 DA0 34 35 36 RM5008D RM5008D RM8007D RM8007D DD12J 400m 400m 400m 400m 450m 450m 3.0A 3.0A 5.5 A 5.0* 5.0* 15 15 30 30 100m 100m 1 .On 100p 100p 100p 100p 500p 500p 10 10 10 10 9.0m 14m 330 -.00 13d# 3.6m 175A 175A .. Tags: datasheet abstract.. |
176.78 Kb |
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First line: 2N5417 2N3836 BD264A SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. .3m 2.3m 175J 175J 200J 200J 200J 200J DPL* P P T072 T072 T018 T018 TO 18 DM DA0 DA0 34 35 36 RM5008D RM5008D RM8007D RM8007D DD12J 400m 400m 400m 400m 450m 450m 3.0A 3.0A 5.5 A 5.0* 5.0* 15 15 30 30 100m 100m 1 .On 100p 100p 100p 100p 500p 500p 10 10 10 10 9.0m 14m 330 -.00 13d# 3.6m 175A 175A .. Tags: BD264A 2N3836 2N5417 datasheet abstract.. |
361 Kb |
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First line: DM01B CA3036 L0NA DM02B MA3232 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. .3m 2.3m 175J 175J 200J 200J 200J 200J DPL* P P T072 T072 T018 T018 TO 18 DM DA0 DA0 34 35 36 RM5008D RM5008D RM8007D RM8007D DD12J 400m 400m 400m 400m 450m 450m 3.0A 3.0A 5.5 A 5.0* 5.0* 15 15 30 30 100m 100m 1 .On 100p 100p 100p 100p 500p 500p 10 10 10 10 9.0m 14m 330 -.00 13d# 3.6m 175A 175A .. Tags: MA3232 DM02B L0NA CA3036 DM01B datasheet abstract.. |
358.74 Kb |
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First line: L51A 2N725 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. .3m 2.3m 175J 175J 200J 200J 200J 200J DPL* P P T072 T072 T018 T018 TO 18 DM DA0 DA0 34 35 36 RM5008D RM5008D RM8007D RM8007D DD12J 400m 400m 400m 400m 450m 450m 3.0A 3.0A 5.5 A 5.0* 5.0* 15 15 30 30 100m 100m 1 .On 100p 100p 100p 100p 500p 500p 10 10 10 10 9.0m 14m 330 -.00 13d# 3.6m 175A 175A .. Tags: 2N725 L51A datasheet abstract.. |
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First line: BSX34* MA7805* sc-1625 NS3041 ma7805 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. .3m 2.3m 175J 175J 200J 200J 200J 200J DPL* P P T072 T072 T018 T018 TO 18 DM DA0 DA0 34 35 36 RM5008D RM5008D RM8007D RM8007D DD12J 400m 400m 400m 400m 450m 450m 3.0A 3.0A 5.5 A 5.0* 5.0* 15 15 30 30 100m 100m 1 .On 100p 100p 100p 100p 500p 500p 10 10 10 10 9.0m 14m 330 -.00 13d# 3.6m 175A 175A .. Tags: ma7805 NS3041 sc-1625 MA7805* BSX34* datasheet abstract.. |
354.4 Kb |
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