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First line: 310M SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. # 6.0p# 6.0p# 6.6m 2.4m 2.4m 70A 175A 175A 175A 175A PL%t X59 L75 T072 T072 DA FR 10 11 12 DD09K DD09K DD10K DD10K DD11K 310m 310m 310m 310m 310m 310m 5.5 A 2.5A 6.OA 30 30 30 30 20 30 30m 50m 30m 1 -On 1 .On 1 .On 1 .On 1 .On 1 .On 15 10 15 15 10 15 2.0m 8.0mA .. Tags: 310M datasheet abstract.. |
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First line: 2N5417 2N3836 BD264A SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 1.5p# 6.0p# 6.0p# 6.6m 2.4m 2.4m 70A 175A 175A 175A 175A PL%t X59 L75 T072 T072 DA FR 10 11 12 DD09K DD09K DD10K DD10K DD11K 310m 310m 310m 310m 310m 310m 5.5 A 2.5A 6.OA 30 30 30 30 20 30 30m 50m 30m 1 -On 1 .On 1 .On 1 .On 1 .On 1 .On 15 10 15 15 10 15 2.0m .. Tags: BD264A 2N3836 2N5417 datasheet abstract.. |
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First line: silicon epitaxial mesa diode microwave switch DM01B CA3036 L0NA DM02B SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 1.5p# 6.0p# 6.0p# 6.6m 2.4m 2.4m 70A 175A 175A 175A 175A PL%t X59 L75 T072 T072 DA FR 10 11 12 DD09K DD09K DD10K DD10K DD11K 310m 310m 310m 310m 310m 310m 5.5 A 2.5A 6.OA 30 30 30 30 20 30 30m 50m 30m 1 -On 1 .On 1 .On 1 .On 1 .On 1 .On 15 10 15 15 10 15 2.0m .. Tags: DM02B L0NA CA3036 DM01B silicon epitaxial mesa diode microwave switch datasheet abstract.. |
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First line: 2N725 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 1.5p# 6.0p# 6.0p# 6.6m 2.4m 2.4m 70A 175A 175A 175A 175A PL%t X59 L75 T072 T072 DA FR 10 11 12 DD09K DD09K DD10K DD10K DD11K 310m 310m 310m 310m 310m 310m 5.5 A 2.5A 6.OA 30 30 30 30 20 30 30m 50m 30m 1 -On 1 .On 1 .On 1 .On 1 .On 1 .On 15 10 15 15 10 15 2.0m .. Tags: 2N725 datasheet abstract.. |
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First line: NS3041 ma7805 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 1.5p# 6.0p# 6.0p# 6.6m 2.4m 2.4m 70A 175A 175A 175A 175A PL%t X59 L75 T072 T072 DA FR 10 11 12 DD09K DD09K DD10K DD10K DD11K 310m 310m 310m 310m 310m 310m 5.5 A 2.5A 6.OA 30 30 30 30 20 30 30m 50m 30m 1 -On 1 .On 1 .On 1 .On 1 .On 1 .On 15 10 15 15 10 15 2.0m .. Tags: ma7805 NS3041 datasheet abstract.. |
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