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LTC6269HDD-10#PBF Linear Technology LTC6269-10 - Dual 4GHz Ultra-Low Bias Current FET Input Op Amp; Package: DFN; Pins: 10; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LTC6269IDD-10#PBF Linear Technology LTC6269-10 - Dual 4GHz Ultra-Low Bias Current FET Input Op Amp; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

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DD10 Datasheet

Part Manufacturer Description PDF Type
DD10 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
DD1000 Diotec Fast Switching High Voltage Si-Rectifiers Original
DD1000 Semikron Diode: 20mA: 1000V: Fast Switching High Voltage Silicon Diode Original
DD1000 Semikron Fast Switching High Voltage Si-Rectifier Original
DD1000 Honey Technology Fast Recovery High Voltage Silicon Rectifiers Scan
DD1000 Lucas Semiconductors Silicon Diffused Junction Rectifiers, 50-400V Peak Reverse Voltage Scan
DD1000 Lucas Semiconductors Semiconductor Products Scan
DD1000 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
DD1000 N/A Shortform Electronic Component Datasheets Scan
DD1000 Semtech FAST RECOVERY HIGH VOLTAGE SILICON RECTIFIERS Scan
DD1000P1 Deico Electronics 1M x 1 DRAM Single-In-Line Memory Module Scan
DD1000P100 Deico Electronics 1M x 1 DRAM Single-In-Line Memory Module Scan
DD1000P9 Deico Electronics 1 Meg x 9 DRAM Single-In-Line Memory Module Scan
DD1000P900 Deico Electronics 1 Meg x 9 DRAM Single-In-Line Memory Module Scan
DD1000S33HE3 Infineon Technologies IGBT Modules up to 3300V Diodes; Package: AG-IHVB130-1; I<sub>F </sub> (typ): 1,000.0 A; Configuration: Diode Modules; Technology: IGBT3 Fast; Housing: IHV B 130 mm; Features: -; Original
DD1000S9 Deico Electronics 1 Meg x 9 DRAM Single-In-Line Memory Module Scan
DD1000S900 Deico Electronics 1 Meg x 9 DRAM Single-In-Line Memory Module Scan
DD1001 Microchip Technology Electromechanical Timer Designs: 99 Minute Timer Original
DD1001 Lucas Semiconductors Silicon Diffused Junction Rectifiers, 50-400V Peak Reverse Voltage Scan
DD1001 Lucas Semiconductors Semiconductor Products Scan
Showing first 20 results.

DD10

Catalog Datasheet MFG & Type PDF Document Tags

dd104 murata

Abstract: 473z -999 DD107 CH 101 J 50 DD107 CH 121 J 50 DD108 CH 151 J 50 DD109 CH 181 J 50 DD109 CH 221 J , J 50 DD105 SL 151 J 50 DD106 SL 181 J 50 DD106 SL 221 J 50 -999 DD107 SL 271 J 50 , 06800 5.0 10000 6.0 DD104 F 472 Z 50 80 -20 50 DD105 F 682 Z 50 DD106 F , 1±0.2MHz 5V r.m.s. JIS C 5102 7.6 4 I. R. DC10±1V 10000M DD10DC500±50V 60±5 , I. R. C0.02F10000M DC10±1V C0.02F17500M DD10DC500±50V 60±5 JIS C 5102 7.1 5
muRata
Original
dd104 murata 473z 104z 25v 2KV 223Z DD104 989 104Z 500V C83-3 C83J3 DD100 DD300 DD400 DD300/DD400

33R 8P4R

Abstract: C3198 122 123 124 125 126 127 128 1_DD5 1_DD10 GND AD6 AD5 VDD33 AD4 AD3 AD2 AD1 AD0 , _DCS1# 1_DCS0# 1_DD10 1_DSA1 1_DACK# 1_DD4 VCC_3.3V VCC_3.3V_FIX 1_DIRQ 1_DRDY 1_DDRQ 1_DD13 1_DD2 1_DD12 1_DD3 1_DD11 1_DD4 1_DD10 1_DD5 1_DD15 1_DD0 1_DD14 1_DD1 1_DD9 1 , : 66MHZ M66EN 0.01UF C55 H2X4 DIRQ DRDY DDRQ DD13 DD2 DD12 DD3 DD11 DD4 DD10 , DD9/RA6 VDD18 DD5/RA7 DD10/RA12 VDD33 DD4/RA15 DD11 DD3/RD7 102 101 100 99 98 97 96
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Original
CAP0402 MTH315D158 XRS10L620 IDE-40P H20X2 33R 8P4R C3198 AD148 29ee512 L0805 22UF/16V DD12/RD6

CY7C64603-80NC

Abstract: DD15 Regulator 3.3V DD0 DD1 DD2 DD3 DD4 DD5 DD6 DD7 DD8 DD9 DD10 DD11 DD12 DD13 DD14 DD15 , 48 49 50 51 52 53 54 DD0 DD1 DD2 DD3 DD4 DD5 DD6 DD7 DD8 DD9 DD10 DD11 DD12 , RESET# GND DD7 DD8 DD6 DD9 DD5 DD10 DD4 DD11 DD3 DD12 DD2 DD13 DD1 DD14 DD0 DD15 GND , 3 DD8 DD9 DD10 DD11 DD12 DD13 DD14 DD15 IOCS16 3.3V C13 DA2 CS1# 0.1 ATA
-
Original
2N4401 SN75240PW MAX882 CY7C64603-80NC DD15 DD11 DD12 24LC00/01/64

F223Z 1kv capacitor

Abstract: capacitor 223z F DD104-DD106 12 12 B 102 472 DD107 & DD108 121J 331J B 332K 223Z M , DD106 M CH 680 J 50 DD106 M CH 820 J 50 -999 DD107 M CH 101 J 50 DD107 M CH 121 J 50 DD108 M CH , 330 DD104 M SL 101 J 50 DD104 M SL 121 J 50 DD105 M SL 151 J 50 DD106 M SL 181 J 50 DD106 M SL , C83E2.pdf 98.03.05 CERAMIC CAPACITOR 12V/16V/25V/50V/500V DD100 . DD10 . DD300 . DD400 Series , TEST METHOD 6-1. TEMPERATURE COMPENSATING TYPE DD100/DD10 SERIES · · · · · · · · · · · 17 6-2. HIGH
muRata
Original
F223Z 1kv capacitor capacitor 223z f103z 1kv 473m ceramic capacitors 223Z capacitor type 104z 50v C83E-2

LTBJD

Abstract: ms10 diode ) G = 1 (DD10) G = 2 (MS10) G = 2 (DD10) G = 4 (MS10) G = 4 (DD10) G = 1 (MS10) G = 1 (DD10) G = 1 (MS10) G = 1 (DD10) ±15V ±15V ±15V ±15V ±15V ±15V ±5V ±5V ±2.5V ±2.5V 1 1.5 , 1 (DD10) ±2.5V, ±5V, ±15V ±2.5V, ±5V, ±15V en Input Noise Voltage G = 1, f = 10kHz G = , ) G = 1 (DD10) G = 2 (MS10) G = 2 (DD10) G = 4 (MS10) G = 4 (DD10) G = 1 (MS10) G = 1 (DD10) G = 1 (MS10) G = 1 (DD10) VOS TC Input Offset Voltage Drift Referred to Input (Note 9
Linear Technology
Original
LT1995 LT1363 LT1991 LTBJD ms10 diode op-amp 15mhz Datasheet LT1880 LT6700-3 IRF9530 LT1990

PPC750L

Abstract: IBM powerpc 750l , and Frequency Note: In the 750CX first release (DD1.0), the data cache reload bus width is only 64 , in DD2.0, DD2.1, and DD2.2. Enabled in DD1.0, DD2.3e, DD2.4, and DD3.1 PPC750Lvs750CX_app.fm , .) instructions. Release Notes In 750CX release DD1.0, the CKSTP_OUT# signal is replaced by the CLKOUT signal , 750L and 750CX/CXe Microprocessors In 750CX/CXe releases DD1.0 and DD2.0, the DBWO# signal is , , release DD1.0. Bus Pull-Up Resistor Requirements Start-Up Functions Several pins are used to
IBM
Original
PPC750L IBM powerpc 750l IBM 750L 0.18-um CMOS technology characteristics 750CX/CX 750TM 256-KB

FMM5048GJ

Abstract: system (SATCOM). The drain voltage and gate voltage are the same for both models: drain voltage V DD10V , Characteristics (FMM5522GJ) Figure 4 Frequency Characteristics (FMM5048GJ) V DD10 VI DD1.75 AV GG-5.0 V 38 , PowerdBm 36 34 32 38 V DD10 VI DD2.1 AV GG-5.0 V 1 dB comp. Pin10 dBm Pin7.0 dBm Pin6.0 dBm Pin4 , 32 31 30 29 28 27 V DD10 VI DD1.75 AV GG-5.0 Vf14.25 GHz 80 70 Pout Output PowerdBm 60 add 50 40 30 add 20 10 0 V DD10 VI DD2.1 AV GG-5.0 Vf14.25 GHz 37 36 35 34 33 32 31 30
Fujitsu
Original

LT1995IDD

Abstract: LTBJD Referred to Input (Note 7) G = 1 (MS10) G = 1 (DD10) G = 2 (MS10) G = 2 (DD10) G = 4 (MS10) G = 4 (DD10) G = 1 (MS10) G = 1 (DD10) G = 1 (MS10) G = 1 (DD10) ±15V ±15V ±15V ±15V ±15V ±15V , Offset Voltage (Note 10) G = 1 (MS10) G = 1 (DD10) ±2.5V, ±5V, ±15V ±2.5V, ±5V, ±15V en , Referred to Input (Note 7) G = 1 (MS10) G = 1 (DD10) G = 2 (MS10) G = 2 (DD10) G = 4 (MS10) G = 4 (DD10) G = 1 (MS10) G = 1 (DD10) G = 1 (MS10) G = 1 (DD10) VOS TC Input Offset Voltage Drift
Linear Technology
Original
LT1995IDD op 30MHZ LT1995CDD LT1996 MS10 LTC1992 LTC6910-

f103z 1kv

Abstract: capacitor 223z Temp. Char. Item DD104YDD106 DD107 & DD108 DD109YDD112 Temperature Compensating Type High , 680 J 50 DD106 - CH 820 J 50 ­999 DD107 - CH 101 J 50 DD107 - CH 121 J 50 DD108 - CH 151 J 50 , DD104 - SL 101 J 50 DD104 - SL 121 J 50 DD105 - SL 151 J 50 DD106 - SL 181 J 50 DD106 - SL 221 J 50 , 50 7.5 DD107 - B 472 K 50 04700 05600 8.0 DD108 - B 562 K 50 06800 9.5 DD109 , 50 4.0 06800 Bulk DD104 - F 472 Z 50 W80 Y20 50 DD105 - F 682 Z 50 DD106 - F 103
muRata
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223z 1kv ceramic capacitor f103z 2kv 473m ceramic radial capacitors 332K 1kv ceramic capacitor f 104 z ceramic capacitor 104m 25v 61 C83E-3 C83E3 DD100/DD10

INVENTEC

Abstract: led smd 3028 : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N DATE POWER DATE INVENTEC TITLE DD1.0 DOC. NUMBER REV VER , (Northstar) INVENTEC TITLE DD1.0 DOC. NUMBER REV SIZE CODE A3 CHANGE by MORRIS CHANG 28 , RJ11 RJ45 CHANGE by KEY BOARD TOUCH PAD INVENTEC TITLE DD1.0 DOC. NUMBER REV SIZE , (ADP3208) INVENTEC TITLE DD1.0 DOC. NUMBER REV SIZE CODE A3 CHANGE by MORRIS CHANG 28 , MORRIS CHANG 28-Feb-2007 R524 2 2 DD1.0 DC &BATTERY CHARGER DOC. NUMBER REV 24K_1
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Original
INVENTEC led smd 3028 BCM5906M inventec dosxx INVENTEC davos3.0 R9225 52-MINI 53-ODD R9313 DIO11 C9167 C9169
Abstract: = 1k, G = 1 ±15V 10 G = 1 (MS10) G = 1 (DD10) G = 2 (MS10) G = 2 (DD10) G = 4 (MS10) G = 4 (DD10) G = 1 (MS10) G = 1 (DD10) G = 1 (MS10) G = 1 (DD10) ±15V ±15V ±15V  , Op Amp Input Offset Voltage (Note 10) G = 1 (MS10) G = 1 (DD10) ±2.5V, ±5V, ±15V  , ) G = 1 (MS10) G = 1 (DD10) G = 2 (MS10) G = 2 (DD10) G = 4 (MS10) G = 4 (DD10) G = 1 (MS10) G = 1 (DD10) G = 1 (MS10) G = 1 (DD10) VOS TC Input Offset Voltage Drift Referred to Input Linear Technology
Original

uPD6750

Abstract: e07sl PLLLE DD14 DD13 DD12 DD11 DD10 TXSW5 DD9 TXSW6 DD8 DD7 TXD0 DD6 MDC , DA11 28 55 DD8 6 27 TXD0 DA12 DD9 56 26 5 DD10 RXD0 DA13 , 25 DD11 DPRAM/ I/O CMOS 26 DD10 DPRAM/ I/O CMOS 27 DD9 , FREQ_1 DD15 DD14 DD13 DD12 DD11 DD10 DD9 DD8 CS LDS FC SW R14 , R6 R5 R4 R3 DD15 DD14 DD13 DD12 DD11 DD10 DD9 DD8 R2 R1 CNT
NEC
Original
uPD6750 e07sl ic 351 PD6750GC MDC300 DSRC 5.8 GHz PD6750 S14919JJ1V0UM00 S14829J FAX044435-9608

Inventec

Abstract: kbc1070 : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N DATE POWER DATE INVENTEC TITLE DD1.0 DOC. NUMBER REV VER , (Northstar) INVENTEC TITLE DD1.0 DOC. NUMBER REV SIZE CODE A3 CHANGE by MORRIS CHANG 4 , RJ11 RJ45 CHANGE by KEY BOARD TOUCH PAD INVENTEC TITLE DD1.0 DOC. NUMBER REV SIZE , (ADP3208) INVENTEC TITLE DD1.0 DOC. NUMBER REV SIZE CODE A3 CHANGE by MORRIS CHANG 4 , MORRIS CHANG 4-Jan-2007 R524 2 2 DD1.0 DC &BATTERY CHARGER DOC. NUMBER REV 24K_1
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Original
kbc1070 5A40V ICH8M REV 1.0 inventec dd1.0 si7686 VAIL2-0 R9309 R9308 FM211 U9032 60DGND U9030

inverse quick transformation

Abstract: LU126 DD5 DGND f CLK b it 1 b it 0 UNFL CËT V BB v refL CE2 n.c. V DD5 V DD10 analogue voltage input , devices (see "Handling MOS Devices"). July 1988 1339 symbol V DD5 V DD10 V| min. -0 .5 -0 .5 -0 .5 -6 5 0 , DD10 'DD5 'DD10 v refL v refH I ref 2.4 5.0 150 2.5 5.1 - 2.6 V V mA 5.2 450 V |L , destroy the device. 31 39 INL DNL dG dP Pe ± 1/4 ± 1/3 ±3 ±1 10 symbol typ. unit 'DD5 'DD10 f
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OCR Scan
inverse quick transformation LU126 saa90 SAA9079

750FX

Abstract: processor . 8.3.1 DD1.0 & DD1.1 Package Top View , . 11 Figure 8-1. DD1.0 & DD1.1 Package Top View , planned to be available on 750FX. Notes: DPM does not function on revision level DD1.0, but has been , Configuration The 750CX for DD1.0, the CKSTP_OUT is removed and CLKOUT is present. Beginning with DD2 , Mechanical Specifications Figure 8-1 DD1.0 & DD1.1 Package Top View on page 20 shows the top, bottom, and
IBM
Original
processor PowerPC 750FX 750FXTM 750CXTM/

JIS C 5102

Abstract: jis c 6-2. DD100 DD10 1 -25 85 JIS C 5102 7.8 10 2 2 20 1 ±0.2KHz 5Vrms JIS C 5102 7.9 3 D.F. BED. F. 2.5 20 F 1 ±0.2KHz D. F. 5.0 5Vrms JIS C 5102 7.6 4 I. R. C 0.02F 10000M C 0.02F 7500M 10 ±1V DD10 500 ±50V 60 ±5 JIS C 5102 7.1 5 ×250 1 5 50mA JIS C 5102 7.1 7.1.3 3.3 ×250 1 5 50mA B ±10 6 JIS C 5102 7.12 12
muRata
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2000M JIS C 5102 jis c JIS 5102 JISC5102 JIS-C-5102 1000M

V242

Abstract: 51n25 V DD5 V DD10 V| min. - 0 .5 - 0 .5 - 0 .5 - -65 max. + 7.0 + unit V V V mA W °C °c 12.0 + 7.0 , V DD10 !DD5 d d io 4.5 9.5 - - - - - 5.5 10.5 85 18 V V mA mA 4-5 t0 5 5 V DD10 = v 24-2 , D 5 = V 3 # 12, 23-13 = 4.5 V to 5.5 V ; V DD10 = V24-2 = 9.5 V to 10.5 V ; V ref L = 2.5 V ; V refH , LS B % % deg dB % 'D D 5 >DD10 fC LK B Ptot 51 n 25 20 365 1.5 mA mA MHz MHz mW LS B symbol typ. unit
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OCR Scan
V242 51n25 7Z97666

JIS C 5102

Abstract: jis c 6. 6-1. DD100 DD10 1 -25 85 JIS C 5102 7.8 10 3 2 20 1 ±0.2MHz 5Vrms JIS C 5102 7.9 30pF Q 1000 20 30pF Q 400 20C Q 3 1 ±0.2MHz 5Vrms JIS C 5102 7.6 4 I . R . 10000M 10 ±1V DD10 500 ±50V 60 ±5 JIS C 5102 7.1 5 ×300 1 5 50mA JIS C 5102 7.1 7.1.3 3.3 ×250 1 5 50mA JIS C 5102 7.12 12 6 2 -25 4 85 ±0.2
muRata
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Q1000 30PF 5102
Abstract: 3.4 4.5 Output charge Q oss V DD=10 V, V GS=0 V - 2.6 3.4 - - 1.5 - - pF 26 V DD=10 V, V GS=4.5 V, I D=6.5 A, R G=1.6 â"¦ ns Gate Charge Characteristics 4) V DD=10 V, I D=6.5 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous Infineon Technologies
Original
BSO330N02K IEC61249-2-21 330N2K
Abstract: . FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 3.4 4.5 Output charge Q oss V DD=10 V, V GS=0 V - 2.6 3.4 - - 1.5 - - pF 26 V DD=10 V, V GS=4.5 V, I D=6.5 A, R G,ext=1.6 W ns Gate Charge Characteristics4) V DD=10 V, I D=6.5 A, V GS=0 to 4.5 V Infineon Technologies
Original

1S6056A

Abstract: 1S6010A No.C83-3webPDF No.C83J3.pdf 00.3.15 12V/16V/25V/50V/500V DD100 DD10 DD300 DD400 , 3. 1.DD100 50V .6 1.DD10 500V , . .18 6. 1.6-1.DD100/DD10 .19 1.6-2.DD100/DD10 .21 1.6-3.DD300/DD400 , DD10 1560 500 1013 B 10010000 2 E 50 DD300 F 25 100010000 F
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OCR Scan
1S6006A 1S6007A 1S6008A 1S6009A 1S6010A 1S6011A 1S6056A 1S6012A 1S6015A S010 1S6030A

1B40K20

Abstract: 1B40K10 ) G = 1 (DD10) G = 2 (MS10) G = 2 (DD10) G = 4 (MS10) G = 4 (DD10) G = 1 (MS10) G = 1 (DD10) G = 1 (MS10) G = 1 (DD10) ±15V ±15V ±15V ±15V ±15V ±15V ±5V ±5V ±2.5V ±2.5V 1 1.5 , 1 (DD10) ±2.5V, ±5V, ±15V ±2.5V, ±5V, ±15V en Input Noise Voltage G = 1, f = 10kHz G = , ) G = 1 (DD10) G = 2 (MS10) G = 2 (DD10) G = 4 (MS10) G = 4 (DD10) G = 1 (MS10) G = 1 (DD10) G = 1 (MS10) G = 1 (DD10) VOS TC Input Offset Voltage Drift Referred to Input (Note 9
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OCR Scan
1S5027C 1B05J10 1B05J20 1B05J40 1B10J10 1B10J20 1B40K20 1B40K10 1B40K05 1B20K05 1B20K40 1S5015C 1S5016C 1S5000C 1S5018C 1S5020C 1S5022C
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