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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

DD 127 D TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D d e (4) IO H 4 OUT2, bipolar transistor V be = 0-7 V dd «£ 1.5V, w hen externa! reference , installation of SVM 7960C Series into microcomputer-applied equipment. I FEATURES ·M e lo d y ROM capacity.127 , BLOCK DIAGRAM PIN CONFIGU RATION D(P-16pin/SOP1-16Pin OSC1C OSC2[ 2 16 ] V dd 15 ]OUT2 14 ]OUT1 , perform ance, either by binary or terminal selection, at S E L 1 /S E L 2 V dd= 1 -5 V V d d 0.6 , transistor V il = V s s V d d = 1 .5 V V d d = 1 .2 V V d d = 1 .5 V A1 A V b e = 0 .7 V During
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SVM7960 DD 127 D TRANSISTOR transistor DD 127 D DD 127 transistor SVM7962 1PI12 PF237-06 DIP-16 J0055 SVM7900

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 5.8 5.8 5.8 a2 4.8 4.8 4.1 4.1 4.2 D 12.0 17.0 19.5 22.0 22.0 Xe 10.16 13.97 19.05 21.59 20.447 e 1.27 1.27 1.27 1.27 0.889 E 2.4 2.8 2.8 2.8 2.8 *L F S 24 : 2.54 ±0.25 31 ROHM CO LTD MOE D , ROHM CO LTD 4GE D El TfiSfiSTi 0 0 Q 3 2 S Ö Ô ^ R H M ~7p-zs2-/3-QS\ T - 7 7 ~ 2 . , ; internal output transistor anti-saturation circuit Pseudo linear system; built-in amplifier and hysterisis , -ch Reversible motor driver 2-ch Reversible motor driver 2-ch Reversible motor driver 2-phase DD motor driver
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BA6248 BA6414FP SLO 365 R dd 127 dd 127 d BA6414FS A 3121 IC BA6209/BA6209N/ BA6209FP MFS16 MFS20 MFS24 MFP24

DD 127 D transistor

Abstract: transistor V b e = 0 .7 V V d d = 1 .2 V 6 .0 20 60 PA V d d = 1 .5 V - - 1 .5 , ) MT PI V |H 3 = V d D l|H3 "1 " input current (4) V | hi- V dd, during p erform ance, eith er , bol C o n d itio n M in. M ax. 3 .0 V dd T yp. 5 .0 5 .5 V V dd V U , tones from a preprogrammed ROM. The ROM has a capacity of 127 words and can store up to 4 melodies from , FEATURES â'¢M elody ROM capacity.127 words â'¢ U p to 4 melodies (3 if it is
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PF237-05 SVM7960C SVM7960S

DD 127 D transistor

Abstract: 2N6804 7.5 , V DD = -35 V Rinse time I D = -11 A, V GS = -10 V, R G = 7.5 , V DD = -35 V Turn-off delay time I D = -11 A, V GS = -10 V, R G = 7.5 , V DD = -35 V Fall time I D = -11 A, V GS = -10 V, R G = 7.5 , V DD = -35 V Diode Reverse Recovery Time di/dt 100 A/µs, V DD -50 V, I F = -11 A Symbol t d(on) tr , MOSFET Qualified per MIL-PRF-19500/562 DESCRIPTION This 2N6804 switching transistor is military , transistor products to meet higher and lower power ratings with various switching speed requirements in both
Microsemi
Original
T4-LDS-0113

hfc4511

Abstract: DD 127 D TRANSISTOR ) MECHANICAL DATA mm DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.27 8.5 2.54 17.78 7.1 5.1 0.130 0.050 0.51 , ) MECHANICAL DATA mm MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 9.8 5.8 1.27 8.89 4.0 5.3 1.27 0.62 , constructed with COS/MOS logic and n-p-n bipolar transistor output devices on a single monolithic structure , multiplexing circuitry is used. November 1996 B c L T B L 1[ z( s[ !1 6V D 0 ]t5 ]i4 ]l3 ]l2 ]l1 ]'j ]9 f a a b c d « L E /5 T R 0 B Esj D A ¥ S S fi| 7f b[ 1/16 HCC/HFC4511 B FUNCTIONAL
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F4511 hfc4511 CC4511 HCC/HCF4511B CC4511BF HCF4511BC1 HCC4511B 4511B

DD 127 D TRANSISTOR

Abstract: MOTOR DRIVER VCR ROHN CORP Tß 3-Phase DD Motor Driver » e | 7 0 2 0 ^ O D flfll 1 | T - S '& '/ S 'T t S BA6200AL Dimensions (Unit: mm) lU lH f T I The BA6200AL is a monolithic, 3-phase DD , . 2 . 54± 0.5 1.27± 0.5 0 .6 ± 0.1 2 . 54+ 0.5 1.27± 0.5 Fig. 1 Block Diagram Features 1. Integrates on a single chip all func tions required for 3-phase DD motor driving. 2. Driving current feedback , driver VCR capstan motor driver DD motor driver for tape decks, record players, etc. Floppy disk drives
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MOTOR DRIVER VCR vcr drum motor 782Q999

HCF4007UBE

Abstract: HCF4007UBEY transistors. The transistor elements are accessible through the package terminals to DIP SOP ORDER , P2, SP3 13, 1 D P1, DP2 8, 5 DN1, DN2 4, 9 SN2, SN3 12 DN/P3 6, 3, 10 , n-channel transistor drains Gate connections to n-channel and p-channel of the three transistor pairs ABSOLUTE MAXIMUM RATINGS Symbol V DD Parameter Unit -0.5 to +22 Supply Voltage Value V , mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating
STMicroelectronics
Original
HCF4007UB HCF4007UBEY HCF4007UBM1 HCF4007UM013TR HCF4007UBE JESD13B PO13G

4081B

Abstract: 4082B B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 , /4082B S014 MECHANICAL DATA DIM. MIN. A al a2 b b1 C C1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 , mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 , DIAGRAM 4073B 4081B 4082B A v00 Q H I H 0 D C b Voo K H G F B D È F Ì" 10 , 2 3 7 ÜGbbSlb 3fll HCC/HCF4073B/4081B/4082B ABSOLUTE MAXIMUM RATINGS Symbol V dd' Vi l
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HCC4073B/81B/82B HCF4073B/81B/82B HCC4073B HCC4081B HCC4082B HCF4073B

DD 127 D TRANSISTOR

Abstract: MECHANICAL DATA DIM. MIN. A al a2 b bl C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 , rZ 7 Ë S G S -T H O M S O N [RfflD(g[E®[l[LI©Tri®K]D©i HCC/HCF4068B 8-INPUT NAND , 7^2^23? 00fc>b47b ^75 S 182)0 1/10 HCC/HCF4068B ABSOLUTE MAXIMUM RATINGS Symbol V dd* Vi h , ) Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full , to + 18 - 0.5 to V dd + 0.5 ± 10 200 100 - 55 to + 125 - 40 to + 85 - 65 to + 150 Unit V V V mA mW
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HCC4066BF HCF4068BM1 HCF4068BEY HCF4068BC1 HCC4068B HCF4068B

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D AND 25 °C . NOISE MARGIN (FULL PACKAGE TEMPERA­ TURE RANGE): 1V AT V dd = 5V, 2V AT V dd = 10V, 2.5V AT V dd = 15V F (Ceramic Package) M1 (Micro Package) APPLICATIONS: . KEYBOARD ENCODING , tied low. 1 5 DESCRIPTION [ [ 3 14 ] D 7 [ 4 13 1 3 8 [ 5 12 ] 2 c [ 6 11 ] B [ 7 10 3 9 8 9 3 A Vss [ 3 V dd o , RATING Parameter Symbol Vd d * Vi li P lo t Value -0.5 to +20 -0.5 to +18 Supply
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40147B F40147B HCC40147BF CF40147BEY HCF40147BM1 HCF40147BC1

DD 127 D TRANSISTOR

Abstract: KS58015 D I0 - D I 3 , TEN mA 100 100 Vss 0 .2V dd V dd V dd = 3V, V0 = 0.5, TEN = LOW , Colum n to Row dBcR V dd = 3V, RL = 5 K à à TH D (Dual Tone) TH D 1 M Hz Bandwidth, V Dd = 5V, R l = 5 K il ts T (OSC) D ata S et-up Tim e V mA 2 2 HA dBV 3 dB , HA K£i 0 .8V dd D I0 - D I 3 , TEN Vo (TONE) Unit 8.0 V dd = 3.0V, M UTE Open , 4 mS t s u (DATA) V dd = 3.0V 200 nS D ata Hold Tim e t H (DATA) V dd = 3.0V
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KS58015 579545M KS58015N KS58015D 14-DIP-300 14-SO

U11C

Abstract: b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 , DIM. MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 , " r = 7 T# S G S -T H O M S O N « M ilL IO r a W D O i K g i S S TM g HCF4007UB DUAL CO , Carrier) O R D ER CODES : HCC4007UBF HCF4007UBM1 HCF4007UBEY HCF4007UBC1 PIN CONNECTIONS Q2( p , . The transistor elements are accessible throughthe package terminals to provide a conveni ent means for
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U11C HCC4007UB 7RETB37 P001A HCC/HCF4007UB 7TETE37 PLCC20

CD4098

Abstract: MC14538B Derating: Plastic "P and D/DW" Packages: ­ 7.0 mW/_C From 65_C To 125_C Ceramic "L" Packages: ­ 12 mW/_C , COMPONENTS. VDD = PIN 16 VSS = PIN 8, PIN 1, PIN 15 * Consult factory for possible "D" suffix SOIC Case , the Q output low, and the timing capacitor CX completely charged to V DD. When the trigger input A goes from V SS to V DD (while inputs B and Reset are held to V DD) a valid trigger is recognized, which turns on comparator C1 and N­channel transistor N1 . At the same time the output latch is set
Motorola
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MC14538B MC14528B CD4528B CD4098 MC14XXXBCP MC14XXXBCL cx 770 104 K capacitor MC54/74HC4538A

HCF4511BE

Abstract: bcd to seven segment circuit diagram n-p-n bipolar transistor output devices on a single monolithic structure. This device combines the low , transistor capable of sourcing up to 25mA. This capability allows HCF4511B to drive LEDs and other displays , SYMBOL 7, 1, 2, 6 13, 12, 11, 10, 9, 15, 14 3 4 A, B, C, D 5 8 16 FUNCTIONAL DIAGRAM , Supply Voltage HCF4511B LOGIC DIAGRAM TRUTH TABLE LE BL LT D C B A a b c d e f g DISPLAY X X L L L L L X L H H H H H L H H H H H
STMicroelectronics
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HCF4511BEY HCF4511BM1 HCF4511M013TR PO13H HCF4511BE bcd to seven segment circuit diagram seven segment display cathode Common-cathode 7-segment LED display

DD 127 D transistor

Abstract: 2N6849 A, V GS = -10 V, R G = 7.5 â"¦, V DD = -40 V t d(on) 60 ns Rinse time I D = -6.5 A, V GS = -10 V, R G = 7.5 â"¦, V DD = -40 V tr 140 ns Turn-off delay time I D = -6.5 A, V GS = -10 V, R G = 7.5 â"¦, V DD = -40 V t d(off) 140 ns Fall time I D = -6.5 A, V GS = -10 , commercial versions Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849 switching transistor is , in a low profile U surface mount package. Microsemi also offers numerous other transistor products
Microsemi
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2N6849U T4-LDS-0009
Abstract: N D ITIO N S Symbol V dd Vi Top Parameter Supply Voltage : HCC Types HCF Types Input Voltage , .2 V min. with V dd = 10 V , 2.5 Vm in. with V d d = 15V. /= 7 SCS-THOMSON * 7# Dil6 ROBLB61fR , b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 , 0.46 0.25 c1 D 8.55 5.8 1.27 7.62 3.8 4.6 0.5 8.75 6.2 0.336 0.228 0.050 0.300 0.344 , PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 -
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HCC4078BF HCF4078BM1 HCF4078BEY HCF4078BC1 HCC4078B HCF4078B

4502B

Abstract: HCC4502B MAXIMUM RATINGS Symbol V DD* Parameter Value ­ 0.5 to + 20 ­ 0.5 to + 18 V V ­ 0.5 to V DD + 0.5 Supply Voltage : HC C Types H C F Types Unit V Vi Input Voltage II DC , Output Transistor for T o p = Full Package-temperature Range 200 mW 100 mW Pt ot Top , Symbol Parameter Value 3 to + 18 3 to + 15 Supply Voltage : HC C Types H CF Types V DD VI , = low 2/11 V V 0 to V DD Operating Temperature : HCC Types H CF Types Top Unit
STMicroelectronics
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HCC4502BF HCF4502BM1 HCF4502BEY HCF4502BC1 HCC4502B HCF4502B 4502B HCC/HCF4502B

4502B

Abstract: HCC4502B MAXIMUM RATINGS Symbol V DD* Parameter Value ­ 0.5 to + 20 ­ 0.5 to + 18 V V ­ 0.5 to V DD + 0.5 Supply Voltage : HC C Types H C F Types Unit V Vi Input Voltage II DC , Output Transistor for T o p = Full Package-temperature Range 200 mW 100 mW Pt ot Top , Symbol Parameter Value 3 to + 18 3 to + 15 Supply Voltage : HC C Types H CF Types V DD VI , = low 2/11 V V 0 to V DD Operating Temperature : HCC Types H CF Types Top Unit
STMicroelectronics
Original
P027A

HCF4015B

Abstract: HCC4015B /HCF4015B FUNCTIONAL DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DD * Parameter Unit ­ 0.5 to + 20 ­ 0.5 to + 18 V V ­ 0.5 to V DD + 0.5 Supply Voltage : HC C Types H CF Types Value , Dissipation (per package) Dissipation per Output Transistor for T o p = Full Package-temperature Range , voltage. RECOMMENDED OPERATING CONDITIONS Symbol V DD VI Top 2/12 Parameter Supply Voltage , 3 to 18 3 to 15 V V 0 to V DD V ­ 55 to + 125 ­ 40 to + 85 °C °C HCC/HCF4015B
STMicroelectronics
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HCC4015BF HCF4015BM1 HCF4015BEY HCF4015BC1 HCC4015B HCF4015B
Abstract: : 1Vm in. with V dd - 5V, 2Vm in.with Vdd - 10V, 2.5 V m in. with Vdd - 15V. 4/13 ^7# D D bbn? iS , mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 , MEDIUM SPEED OPERATION : t p m = t p L H = 60ns (typ.) AT C l = 50pF, V d d = 10V . STANDARDIZED , HCF4019BEY HCF4019BC1 PIN C O N N E C T IO N S 34 A3 a [ 1 [2 [ 3 1v D B 1 9] A4 1 16 , MAXIMUM RATINGS Symbol V dd* Vi li P lo t Parameter Supply Voltage : HCC Types HCF Types Input -
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T18VAND25 HCC4019BF HCF4019BM1 HCC4019B HCF4019B HCC/HCF4019B
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