PF08109B DCS1800 ADE-208-821C RF-O-12 D-85622 - Datasheet Archive

 

MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-821C (Z) 4th Edition Feb. 2001 Application

 

PF08109B PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 DCS1800 Dual Band Handy Phone ADE-208-821C ADE-208-821C (Z) 4th Edition Feb. 2001 Application · Dual band Amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 DCS1800 (1710 MHz to 1785 MHz) · For 3.5 V nominal battery use Features · · · · · 2 in / 2 out dual band amplifire Simple external circuit including output matching circuit High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ High efficiency : 50 % Typ at nominal output power for E-GSM 43 % Typ at 32.7 dBm for DCS1800 DCS1800 Pin Arrangement · RF-O-12 RF-O-12 7 8 G 9 10 G 11 12 6 1 G 5 G 2 4 3 1: N/C 2: N/C 3: Pout DCS 4: Vdd DCS 5: Vdd GSM 6: Pout GSM 7: N/C 8: Vtxlo 9: Pin GSM 10: Vapc GSM 11: Vapc DCS 12: Pin DCS G: GND PF08109B PF08109B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage Vdd 8 V Supply current Idd GSM 3 A Idd DCS 2 A Vtxlo voltage Vtxlo 4 V Vapc voltage Vapc 4 V Input power Pin 10 dBm Operating case temperature Tc (op) -30 to +100 °C Storage temperature Tstg -30 to +100 °C Output power Pout GSM 5 W Pout DCS 3 W Note: The maximum ratings shall be valid over both the E-GSM-band (880 MHz to 915 MHz), and the DCS1800-band (1710 MHz to 1785 MHz). 2 PF08109B PF08109B Electrical Characteristics for DC (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current Ids 100 µA Vdd = 8 V, Vapc = 0 V Vapc control current Iapc 3 mA Vapc =2.2 V Vtxlo control current Itxlo 100 µA Vtxlo = 2.4 V Electrical Characteristics for E-GSM mode (Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd GSM = 3.5 V, Pin GSM = 0 dBm, Rg = Rl = 50 , Tc = 25°C, Vapc DCS = 0.1 V Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Test Condition Frequency range f 880 915 MHz Total efficiency (Hi) T(Hi) 41 50 % Pout 2nd harmonic distortion 2nd H.D. -45 -38 dBc Vapc GSM = controlled 3rd harmonic distortion 3rd H.D. -45 -40 dBc Input VSWR VSWR (in) 1.5 3 Total efficiency (Lo) T(Lo) 27 35 % Pout GSM = 30.8dBm, Vtxlo = 2.4V, Vapc GSM = controlled Output power (1)(Hi) Pout (1)(Hi) 35.5 36.0 dBm Vapc GSM = 2.2V, Vtxlo = 0.1V Output power (1)(Lo) Pout (1)(Lo) 30.8 31.3 dBm Vapc GSM = 2.2V, Vtxlo = 2.4V Output power (2)(Hi) Pout (2)(Hi) 33.5 34.0 dBm Vdd GSM = 3.0V, Vapc GSM = 2.2V, Tc = +85°C, Vtxlo = 0.1V Output power (2)(Lo) Pout (2)(Lo) 28.8 29.3 dBm Vdd GSM = 3.0V, Vapc GSM = 2.2V, Tc = +85°C, Vtxlo = 2.4V Isolation -42 -36 dBm Vapc GSM = 0.2V, Vtxlo = 0.1V Isolation at DCS RF-output when GSM is active -23 -17 dBm Pout GSM = 35.5dBm, Vtxlo = 0.1V Measured at f = 1760 to 1830MHz Switching time tr, t f 1 2 µs Pout GSM = 0 to 35.5dBm, Vtxlo = 0.1V Stability No parasitic oscillation Vdd GSM = 3.0 to 5.1V, Pout GSM 35.5dBm, Vtxlo = 0.1, 2.4V, Vapc GSM 2.2V, GSMpulse. Rg = 50, Output VSWR = 6 : 1 All phases Load VSWR tolerance No degradation Vdd GSM = 3.0 to 5.1V, t = 20sec., Pout GSM 35.5dBm, Vtxlo = 0.1, 2.4V, Vapc GSM 2.2V, GSM pulse. Rg = 50, Output VSWR = 10 : 1 All phases GSM = 35.5dBm, Vtxlo = 0.1V, 3 PF08109B PF08109B Electrical Characteristics for DCS1800 DCS1800 mode (Tc = 25°C) Test conditions unless otherwise noted: f = 1710 to 1785 MHz, Vdd DCS = 3.5 V, Pin DCS = 0 dBm, Rg = Rl = 50 , Tc = 25°C, Vapc GSM =0.1 V Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Frequency range f 1710 1785 MHz Total efficiency (Hi) T(Hi) 36 43 % Pout 2nd harmonic distortion 2nd H.D. -45 -38 dBc Vapc DCS = controlled 3rd harmonic distortion 3rd H.D. -45 -40 dBc Input VSWR VSWR (in) 1.5 3 Total efficiency (Lo) T(Lo) 17 25 % Pout DCS = 26.7dBm, Vapc DCS = controlled Output power (1) Pout (1) 32.7 33.2 dBm Vapc DCS = 2.2V, Output power (2) Pout (2) 30.7 31.2 dBm Vdd DCS = 3.0V, Vapc DCS = 2.2V, Tc = +85°C Isolation -42 -36 dBm Vapc DCS = 0.2V Isolation at GSM RF-output when DCS is active -10 0 dBm Pout DCS = 32.7dBm, Measured at f = 1710 to 1785MHz Switching time tr, t f 1 2 µs Pout Stability No parasitic oscillation Vdd DCS = 3.0 to 5.1V, Pout DCS 32.7dBm, Vapc DCS 2.2V, DCS pulse. Rg = 50, Output VSWR = 6 : 1 All phases Load VSWR tolerance No degradation Vdd DCS = 3.0 to 5.1V, Pout DCS 32.7dBm, t = 20sec., Vapc DCS 2.2V, DCS pulse. Rg = 50, Output VSWR = 10 : 1 All phases 4 Test Condition DCS DCS = 32.7dBm, = 0 to 32.7dBm PF08109B PF08109B Characteristic Curves High mode, f = 880 MHz 55 40 20 Pout (dBm) 10 0 50 Pout 45 40 Eff 35 -10 30 -20 25 -30 20 -40 15 -50 Eff (%) 30 f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 10 5 -60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) Low mode, f = 880 MHz 55 40 20 Pout (dBm) 10 0 -10 50 Pout 45 40 35 Eff 30 -20 25 -30 20 -40 15 -50 Eff (%) 30 f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 10 5 -60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) 5 PF08109B PF08109B High mode, f = 915 MHz 55 40 20 Pout (dBm) 10 0 50 Pout 45 40 Eff 35 -10 30 -20 25 -30 20 -40 15 -50 Eff (%) 30 f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 10 5 -60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) Low mode, f = 915 MHz 55 40 20 Pout (dBm) 10 0 -10 50 Pout 45 40 35 Eff 30 -20 25 -30 20 -40 15 -50 10 5 -60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) 6 Eff (%) 30 f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 PF08109B PF08109B 38 High mode Pout (dBm) 37 36 Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V Low mode 35 34 33 800 840 880 920 f (MHz) 960 1000 50 High mode 45 Eff (%) 40 35 30 25 20 15 800 Low mode 840 Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 High mode: Pout = 35.5 dBm Vtxlo = 0.1 V Low mode: Pout = 30.8 dBm Vtxlo = 2.4 V 880 920 f (MHz) 960 1000 7 PF08109B PF08109B High mode 38 Pout (dBm) 37 Vdd = 3.5 V, Vapc = 2.2 V, Vtxlo = 0.1 V, Tc = 25°C, Rg = Rl = 50 f = 880 MHz 36 f = 915 MHz 35 34 33 -6 -4 -2 0 Pin (dBm) 2 4 6 4 6 Low mode 38 Pout (dBm) 37 Vdd = 3.5 V, Vapc = 2.2 V, Vtxlo = 2.4 V, Tc = 25°C, Rg = Rl = 50 36 f = 880 MHz 35 f = 915 MHz 34 33 -6 8 -4 -2 0 Pin (dBm) 2 PF08109B PF08109B High mode 60 55 f = 915 MHz 50 Eff (%) 45 f = 880 MHz 40 35 Pout = 35.5 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Tc = 25°C, Rg = Rl = 50 30 25 20 -6 -4 -2 0 Pin (dBm) 2 4 6 High mode 60 55 f = 915 MHz 50 Eff (%) 45 f = 880 MHz 40 35 Pout = 34.8 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Tc = 25°C, Rg = Rl = 50 30 25 20 -6 -4 -2 0 Pin (dBm) 2 4 6 9 PF08109B PF08109B Low mode 60 55 50 Pout = 30.8 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Tc = 25°C, Rg = Rl = 50 Eff (%) 45 40 f = 915 MHz 35 30 f = 880 MHz 25 20 -6 10 -4 -2 0 Pin (dBm) 2 4 6 PF08109B PF08109B Eff (%) 60 f = 880 MHz, Vdd = 3.5 V, Vapc = control, 50 Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 High mode: Vtxlo = 0.1 V 40 Low mode: Vtxlo = 2.4 V 30 Low mode 20 High mode 10 26 28 30 32 34 Pout (dBm) 36 38 Id (A) 4 f = 880 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, 3 Tc = 25°C, Rg = Rl = 50 High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V 2 1 High mode Low mode 0 -20 -10 0 10 20 Pout (dBm) 30 40 11 PF08109B PF08109B 60 Eff (%) 50 40 Low mode 30 High mode 20 10 26 28 30 f = 915 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V 32 34 Pout (dBm) 36 38 Id (A) 4 f = 915 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, 3 Tc = 25°C, Rg = Rl = 50 High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V 2 High mode 1 Low mode 0 -20 12 -10 0 10 20 Pout (dBm) 30 40 PF08109B PF08109B f = 1710 MHz 40 20 Pout (dBm) 10 45 40 35 30 0 -10 Pout 25 Eff (%) 30 50 f = 1710 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Eff -20 20 -30 15 -40 10 -50 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) f = 1785 MHz 40 20 Pout (dBm) 10 45 40 35 30 0 -10 Pout Eff 25 -20 20 -30 15 -40 Eff (%) 30 50 f = 1785 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 10 -50 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) 13 PF08109B PF08109B 50 45 40 Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Eff (%) 35 f = 1785 MHz 30 25 f = 1710 MHz 20 15 10 22 14 24 26 28 30 Pout (dBm) 32 34 PF08109B PF08109B 35 Pout (dBm) 34 33 32 31 Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 30 1600 1650 1700 1750 f (MHz) 1800 1850 1900 50 45 Pout = 32.7 dBm 40 Eff (%) 35 30 25 Pout = 26.7 dBm Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 20 15 10 1600 1650 1700 1750 f (MHz) 1800 1850 1900 15 PF08109B PF08109B 35 Pout (dBm) 34 Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 f = 1710 MHz 33 f = 1785 MHz 32 31 30 -6 -4 -2 0 Pin (dBm) 2 4 6 4 6 50 Eff (%) 45 Vdd = 3.5 V, Vapc = control, Pout = 32.7 dBm, Tc = 25°C, Rg = Rl = 50 f = 1785 MHz f = 1710 MHz 40 35 30 25 -6 16 -4 -2 0 Pin (dBm) 2 PF08109B PF08109B 35 Eff (%) 30 Vdd = 3.5 V, Vapc = control, Pout = 26.7 dBm, Tc = 25°C, Rg = Rl = 50 f = 1785 MHz 25 f = 1710 MHz 20 15 10 -6 -4 -2 0 Pin (dBm) 2 4 6 0 Cross band Isolation at GSM RF-output when DCS is active (dBm) -5 -10 Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 -15 f = 1785 MHz -20 f = 1710 MHz -25 -30 -35 15 20 25 Pout (dBm) 30 35 17 PF08109B PF08109B 40 39 Pout (dBm) 38 GSM Hi mode Pin = 0 dBm, Vapc = 2.2 V, Tc = 25°C, Vtxlo = 0.1 V 37 36 35 34 33 f = 880 MHz f = 915 MHz 32 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) 38 37 Pout (dBm) 36 GSM Lo mode Pin = 0 dBm, Vapc = 2.2 V, Tc = 25°C, Vtxlo = 2.4 V 35 34 33 32 31 f = 880 MHz f = 915 MHz 30 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) 18 PF08109B PF08109B 50 45 Eff (%) 40 35 GSM Hi mode 30 Pin = 0 dBm, 25 Po = 35.5 dBm, Tc = 25°C, Vtxlo = 0.1 V f = 880 MHz f = 915 MHz 20 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) 40 35 Eff (%) 30 25 GSM Lo mode 20 Pin = 0 dBm, 15 Po = 30.8 dBm, Tc = 25°C, Vtxlo = 2.4 V f = 880 MHz f = 915 MHz 10 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) 19 PF08109B PF08109B 38 DCS 37 Pin = 0 dBm, Pout (dBm) 36 35 Vapc = 2.2 V, Tc = 25°C f = 1710 MHz f = 1785 MHz 34 33 32 31 30 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) 45 Eff (%) 40 35 30 25 DCS Pin = 0 dBm, Po = 32.7 dBm, Tc = 25°C f = 1710 MHz f = 1785 MHz 20 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) 20 PF08109B PF08109B Isolation at DCS RF-output when GSM is active (dBm) 0 -10 -20 f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 -30 measured at f = 1760 MHz -40 -50 -60 10 15 20 25 30 Pout (dBm) 35 40 20 25 30 Pout (dBm) 35 40 Isolation at DCS RF-output when GSM is active (dBm) 0 -10 -20 f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 -30 measured at f = 1830 MHz -40 -50 -60 10 15 21 PF08109B PF08109B Package Dimensions Unit: mm 1.8 ± 0.2 8 G 7 5 G G 11 4 12 11.0 ± 0.3 6 10 (10.8) 11.0 ± 0.3 9 3 1 G 2 (Upper side) 7 8 G 9 10 G 11 12 13.75 ± 0.3 13.75 ± 0.3 (3.3) (0.8) (1.4) (1.0) (1.4) (0.8) (0.8) (1.4) (1.45) (3.7) (2.5) (2.5) (Bottom side) (1.2) (4.6) (1.2) (1.1) (3.7) 22 (1.4) (4.6) (1.0) (3.4) (1.0) (1.0) (2.8) (1.0) (1.0) (1.4) (2.4) (2.4) 11.0 ± 0.3 (1.0) (2.6) (2.6) (3.3) (1.4) 6 5 1 G G 4 3 2 1: N/C 2: N/C 3: Pout DCS 4: Vdd DCS 5: Vdd GSM 6: Pout GSM 7: N/C 8: Vtxlo 9: Pin GSM 10: Vapc GSM 11: Vapc DCS 12: Pin DCS G: GND Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. Hitachi Code JEDEC EIAJ Mass (reference value) RF-O-12 RF-O-12 PF08109B PF08109B Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : -(2)-2718-3666 Fax : -(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : -(2)-735-9218 Fax : -(2)-730-0281 URL : http://www.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 2.0 23