DCR506-3 DCR506-8 DCR506-4 DCR506-6

THRU DCR506-8 DC COMPONENTS CO., LTD. DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED

DCR506-3 DCR506-3 THRU DCR506-8 DCR506-8 DC COMPONENTS CO., LTD. DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts CURRENT - 6.0 Amperes Description * Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 100 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors TO-220AB Pinning 1 = Cathode, 2 = Anode, 3 = Gate .055(1.39) .045(1.15) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic .185(4.70) .173(4.40) .405(10.28) .380(9.66) .151 Typ (3.83) Rating VDRM, VRRM 100 200 400 600 V On-State RMS Current (TA=57oC, 180o Conduction Angles) IT(RMS) 6.0 A .055(1.40) .045(1.14) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) ITSM 40 A .037(0.95) .030(0.75) Peak Repetitive Off-State Voltage and Reverse Voltage DCR506-3 DCR506-3 DCR506-4 DCR506-4 DCR506-6 DCR506-6 DCR506-8 DCR506-8 Unit .625(15.87) .570(14.48) Symbol Forward Peak Gate Current IGM 1.0 PGM 0.5 1 2 .562(14.27) .500(12.70) W Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature PG(AV) 0.1 TJ -40 to +110 TSTG -40 to +150 .640 Typ (16.25) 3 A Forward Peak Gate Power Dissipation .350(8.90) .330(8.38) .024(0.60) .014(0.35) .100 Typ (2.54) W o C Dimensions in inches and (millimeters) o C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Peak Repetitive Forward or Reverse Off-State Blocking Current Symbol TJ=110oC IDRM, IRRM Min Typ Max - TJ=25oC - 10 - - Unit Test Conditions 250 µA VAK=Rated VDRM or VRRM RGK=1K Peak Forward On-State Voltage VTM - - 2.0 V ITM=6A Peak Continuous DC Gate Trigger Current IGT - - 200 µA VAK=7V DC, RL=100 Continuous DC Gate Trigger Voltage VGT - - 1.0 V IH - - 6.0 mA DC Holding Current Critical Rate-of-Rise of Off-State Voltage Gate Controlled Turn-on Time(tD+tR) Thermal Resistance, Junction to Case VAK=7V DC, RL=100 RGK=1K dv/dt - 8.0 - V/µS RGK=1K Tgt - 2.2 - µsec IGT=10mA RJC - 2.2 - o - C/W