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DATA SHEET SCR TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

Basic principle of AC to DC conversion using SCR

Abstract: SCR TRANSISTOR Setting V Voltage Waveform data sheet rating table. TISP® data sheets will often show a graph of , P-gate connection to the base of the NPN transistor creates a P-gate SCR (Silicon Controlled Figure 16 , and going short circuit under adverse power induction conditions. The transistor buffered SCR , of the diode current diverts to the SCR transistor base causing a negative gate current flow , = -7 mA -200 IK -300 0 5 10 Time - ms 15 Figure 22. Transistor Buffered SCR
Bourns
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SCR 2000

Abstract: SCR TRANSISTOR transistor. If sufficient clipping current flows the SCR will regenerate and switch into a low voltage , buffer transistor. If sufficient clipping current flows the SCR will regenerate and switch into a low , the VBATH supply. Without the transistor, the SCR gate current would charge the VBATH supply. An , the TISP8201M transistor base-emitter and the SCR gate-anode junctions. If sufficient current is , is marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR
Power Innovations
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SCR 2000 SCR TRANSISTOR TISP8200M GR-1089-CORE TISP8200M/TISP8201M

thyristor BT106

Abstract: bty79 scr Issued March 1985 003-396 Data Pack J Overvoltage protector 3423 Data Sheet RS stock , 1.4 261-520 THY 500-40 For further information on the RS range of thyristors (data sheet , overvoltage transients or regulator failures when used in conjunction with an external "crowbar" SCR The , will trigger and supply gate drive to the crowbar SCR, Q1, is given by the equation: Vtrip = Vref (1 , given in Fig. 2. Using this value of RG, the SCR, Q1, will receive the greatest gate current possible
RS Components
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thyristor BT106 bty79 scr SCR c106 PIN CONFIGURATION BT106 RS3423 50026

bty79 scr

Abstract: SCR c106 PIN CONFIGURATION Issued March 1997 232-2302 Data Pack J Overvoltage protector 3423 Data Sheet RS stock , 1.4 261-520 THY 500-40 For further information on the RS range of thyristors (data sheet , overvoltage transients or regulator failures when used in conjunction with an external "crowbar" SCR The , will trigger and supply gate drive to the crowbar SCR, Q1, is given by the equation: Vtrip = Vref (1 , given in Fig. 2. Using this value of RG, the SCR, Q1, will receive the greatest gate current possible
RS Components
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c106 scr 2n4444 ARE 3423 BTY79400R SCR Gate Drive BTX18-400

reverse-conducting thyristor

Abstract: gto Gate Drive circuit cycle. SCR Ratings A data sheet for a typical thyristor follows this section and includes the , than that of SCR. The turn-on time is the same as that of an SCR. Data Sheet for a Typical Thyristor , · The Silicon-Controlled Switch · The Gate Turn-Off Thyristor · Data Sheet for a Typical Thyristor , described in the data specification sheet (Fig 1.12) can handle up to 6 A in the forward direction when , Specifications The data specification sheet for a DSS 20-0015B power Schottky diode is provided as an example in
National Semiconductor
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reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor Usha Rectifier IGCT mitsubishi Emitter Turn-Off thyristor ETO4060

battery charging circuit using scr

Abstract: SCR GATE DRIVER follower action of the NPN buffer transistor. If sufficient clipping current flows the SCR will regenerate , follower action of the PNP buffer transistor. If sufficient clipping current flows the SCR will regenerate , Data Sheet Issue 14/07/2000 14/07/2000 -/08/2000 Short Circuit Current ±130 ±130 , (VBATH) by the conduction of the TISP8200M transistor base-emitter and the SCR gate-cathode junctions , reduces protectors source and sink current loading on the VBATH supply. Without the transistor, the SCR
Texas Instruments
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battery charging circuit using scr SCR GATE DRIVER PEB4264 TISP8200MDR TISP8201MDR transistor k44

TISP8200M

Abstract: TISP8200MDR-S conduction of the TISP8200M transistor base-emitter and the SCR gate-cathode junctions. If sufficient , 's source and sink current loading on the VBATH supply. Without the transistor, the SCR gate current would , rail value (VBATR ) by the conduction of the TISP8201M transistor base-emitter and the SCR gate-anode , marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK , . Testing transistor EB and SCR AK reverse: The highest reverse EB voltage and reverse AK voltage occurs
Bourns
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TISP8200MDR-S TISP8201MDR-S TISP8200M/TIS 8201M 8200M

MOC3001

Abstract: MOC3000 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6-Pin DIP Optoisolators SCR Output These devices , lead form options available. Consult "Optoisolator Lead Form Options" data sheet for details. MAXIMUM , controlled rectifier (SCR). They are designed for applications requiring high electrical isolation between , in Transistor Derate above 25°C Pd 100 1.33 mW mW/°C OUTPUT DRIVER Peak Forward Voltage VDM , °C MOC3000 MOC3001 6-PIN DIP OPTOISOLATORS SCR OUTPUT 400 VOLTS CASE 730A-02 PLASTIC SCHEMATIC
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OCR Scan
IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833 scr optoisolator mr5060 E54915 IEC380/VDE0806 IEC435/VDE0805 IEC65/VDE0860 VDE110

SCR GATE DRIVER

Abstract: SCR Gate Drive SERIES SLIC-S SLIC-E ISLICTM SLIC # PEB4264 PEB 4265 79R251 Data Sheet Issue , the VBATH supply. Without the transistor, the SCR gate current would charge the VBATH supply. An , conduction of the TISP8201M transistor base-emitter and the SCR gate-anode PRODUCT 8 INFORMATION , junctions are subject to voltage stress: Transistor EB and CB, SCR AK (reverse and off state). This clause , Figure 6. PROTECTOR ELECTRODES Testing transistor EB and SCR AK reverse: The highest reverse EB voltage
Bourns
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SCR gate drive circuit SCR FAST SWITCHING
Abstract: SP724 Semiconductor Data Sheet PRELIMINARY SCR/Diode Array for ESD and Transient , analog input circuits on data, signal, or control lines operating on power supplies up to 20VDC. The SP724 is com prised of bipolar SCR/diode structures to protect up to four independent lines by clam , the transient pulse, turning on the diode and fast triggering SCR structures when the voltage on the , 4458.2 Features â'¢ An Array of 4 SCR/Diode Pairs in 6-Lead SOT-23 â'¢ ESD Capability per HBM -
OCR Scan
5M-1982 SC-74

transistor k44

Abstract: 79r251 . Manufacturer SLIC SERIES SLIC # Data Sheet Issue Short Circuit Current VBATH max. VBATR max. VBATR-VBATH max , (VBATH) by the conduction of the TISP8200M transistor base-emitter and the SCR gate-cathode junctions. If , current loading on the VBATH supply. Without the transistor, the SCR gate current would charge the VBATH , conduction of the TISP8201M transistor base-emitter and the SCR gate-anode junctions. If sufficient current , junctions are subject to voltage stress: Transistor EB and CB, SCR AK (reverse and off state). This clause
Bourns
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15J 6KV

Abstract: speed control of induction motor by using scr supplied on the data sheet. CONTACT ARCING DUE TO INDUCTIVE LOAD Problem To extend the life of the , 0.20W rating of a small 31VDC varistor (V39ZA1). From the data sheet it can be seen that if the device , .This is done by using the measured data points to plot curves parallel to the data sheet curves. With , . The circuit shown in Figure 4. experiences failures of the rectifiers and SCR when the transformer , R1 330k 480V AC 60Hz SPEED CONTROL R3 250k and i M = I NL SCR SUS 4:1 R2 15k
Littelfuse
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EC638 15J 6KV speed control of induction motor by using scr SCR C106D equivalent circuit slip ring motor characteristics curve VARISTOR 275 LA 20A 117VAC V130LA2 V130LA5 V130LA10A V130LA20A UL1449

transistor k44

Abstract: GR-1089-CORE buffer transistor. If sufficient clipping current flows, the SCR will regenerate and switch into a low , the PNP buffer transistor. If sufficient clipping current flows, the SCR will regenerate and switch , PEB 4265 79R251 Data Sheet Issue 14/07/2000 14/07/2000 -/08/2000 Short Circuit , negative supply rail value (VBATH) by the conduction of the TISP8200M transistor base-emitter and the SCR , the VBATH supply. Without the transistor, the SCR gate current would charge the VBATH supply. An
Bourns
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tip 416 transistor TISP82

Q4010LS2

Abstract: BJT amplifiers light-activated circuit. Components Needed: 2N4400 BJT, MC 14007 transistor array, Q4015L5 Triac, Q4010LS2 SCR, XE2410 24V-0.5A incandescent lamp, operational amplifier, photo transistor, photo resistor, or , manufacturers data sheet. You will compare these parameters with those obtained by using standard test , experimental understanding of the operation of the bipolar transistor and on relating the experimental , parameters that characterize the MOS transistor along with the physical parameters W and L. Most of these
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BJT amplifiers BJT IC Vce red laser pointer bipolar junction transistor laser diode mosfet triggering circuit bjt ic operational amplifier

k44 transistor

Abstract: DATA SHEET SCR TRANSISTOR SLIC-E ISLICTM SLIC # PEB4264 PEB 4265 79R251 Data Sheet Issue 14/07/2000 14/07 , transistor base-emitter and the SCR gate-cathode junctions. If sufficient current is available from the , 's source and sink current loading on the VBATH supply. Without the transistor, the SCR gate current would , rail value (VBATR ) by the conduction of the TISP8201M transistor base-emitter and the SCR gate-anode , marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK
Bourns
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k44 transistor DATA SHEET SCR TRANSISTOR SCR 213 specifications of scr

SP724AH

Abstract: SP724AHT SP724 Data Sheet SCR/Diode Array for ESD and Transient Over-Voltage Protection [ /Title (SP724 ) /Subject (SCR/ Diode Array for ESD and Transient OverVoltage Protection) /Autho r , by increased leakage in excess of the data sheet published limits. The safe operating range of the , circuits on data, signal, or control lines operating on power supplies up to 20VDC. The SP724 is comprised of bipolar SCR/diode structures to protect up to four independent lines by clamping transients
Harris Semiconductor
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SP724AH SP724AHT General Electric scr SOT-23 triggering scr with microprocessor SCR AUTOMOTIVE APPLICATIONS SCR C 4458 EIA-481 ISO9000 1-800-4-HARRIS

GR-1089-CORE

Abstract: PEB4264 conduction of the TISP8200M transistor base-emitter and the SCR gate-cathode junctions. If sufficient , 's source and sink current loading on the V BATH supply. Without the transistor, the SCR gate current would , rail value (VBATR ) by the conduction of the TISP8201M transistor base-emitter and the SCR gate-anode , marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK , . Testing transistor EB and SCR AK reverse: The highest reverse EB voltage and reverse AK voltage occurs
Bourns
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K45 S2

manufacturing

Abstract: antiparallel scr circuit from data sheet conditions must be considered). Vishay has focused on the infrared LED to improve , . (°C) RH (%) Tj max. 85 According data sheet < 60 85 < 60 BIAS Derated max. rating 0 80 % of max , transistor, temperature, diode current, and device geometry. If all these factors remain constant, the , to fit most applications, including versions without access to the base of the transistor to reduce noise transmission. Darlington transistor outputs offer high gain with reduced input current
Vishay Semiconductors
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manufacturing antiparallel scr Optocoupler with triac transistor working principle Dual optocoupler hi speed smd OPTOCOUPLER for SCR

HP5082-2835

Abstract: The Transistor Manual Japanese 1993 process on which the device is manufactured, and can be found in the data sheet under the Absolute , electrical specifications are applicable only at the supply specified on the data sheet and will not be , the parasitic NPN transistor from being turned on, and also prevents SCR triggering. Figure 11 shows , current of the parasitic lateral-PNP transistor from flowing out the V DD pin, thus preventing SCR , application note: Andrew Olney, Analog Devices, Inc., personal communication 5. Review the data sheet
Analog Devices
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AN-397 HP5082-2835 The Transistor Manual Japanese 1993 TRANSISTOR C-111 HP5082-2835 diode SCR PNP NPN emitter area electrostatic discharge transzorb i-v curve E2054

4 pin scr optoisolator

Abstract: scr optoisolator MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6-Pin DIP Optoisolators SCR Output These devices , '¢ Various lead form options available. Consult "Optoisolator Lead Form Options" data sheet for details , controlled rectifiers (SCR). They are designed for applications requiring high electrical isolation between , 6-PIN DIP OPTOISOLATORS SCR OUTPUT 400 VOLTS CASE 730A-02 PLASTIC SCHEMATIC 1. ANODE 2. CATHODE 3. NC 4. SCR CATHODE 5. SCR ANODE 6. SCR GATE (1) Isolation surge voltage, V|gQ. is an Internal
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OCR Scan
H11C4 4 pin scr optoisolator B 647 AC transistor E54915S IEC204A/3 VDE0883/ H11C5 H11C6
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