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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

D9D TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

D9D TRANSISTOR

Abstract: SOT-23 marking D9D UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 FEATURES *Collector , UNISONIC TECHNOLOGIES CO., LTD. 1 100 UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR PARAMETER , 10 3 10 Collector-Base voltage (V) MARKING CODE D9D UTC UNISONIC TECHNOLOGIES CO
Unisonic Technologies
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D9D TRANSISTOR SOT-23 marking D9D marking D9D d9d marking code transistor D9D 8550S

D9D TRANSISTOR

Abstract: transistor d9d · Reduced RFI and EMI · Reduced Power Loss in Diode and Switching Transistor · Higher Frequency , switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to , Rectifier :.9 2 (0.1151 \ 1 3 2 "4 'T C D r .Jo _1 7 2.04 (0.D9D) Q.-3C'(D.D0*: 2.89 (0.114
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OCR Scan
HFA06TB120

D9D TRANSISTOR

Abstract: SOT-23 marking D9D Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date :2010.10.19 Page No. : 1/4 HI-SINCERITY MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features · High DC Current hFE=150-400 at IC=150mA · Complementary to HMBT8550 Absolute Maximum Ratings · Maximum Temperatures Storage , hFE Rank D9D D9E Range 150-300 250-500 HMBT8050 HSMC Product Specification
Hi-Sincerity Microelectronics
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D9D SOT D9D sot23 npn D9D D9E sot23 marking code D9E

D9D TRANSISTOR

Abstract: SOT-23 marking D9D HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. Features SOT-23 · High DC Current hFE=150-400 at IC=150mA · Complementary to HMBT8550 Absolute Maximum Ratings · Maximum Temperatures Storage Temperature , : Pulse Width 380us, Duty Cycle2% Classification Of hFE Rank Range HMBT8050 D9D 150-300 D9E
Hi-Sincerity Microelectronics
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sot-23 d9d D9D marking D9D SOT-23 ROC SOT 23 UL94V-0

D9D TRANSISTOR

Abstract: SOT-23 marking D9D HI-SINCERITY Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features · High DC Current hFE=150-400 at IC=150mA · Complementary to HMBT8550 Absolute Maximum Ratings · Maximum Temperatures Storage , hFE Rank D9D D9E Range 150-300 250-500 HMBT8050 HSMC Product Specification
Hi-Sincerity Microelectronics
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D9D TRANSISTOR

Abstract: D9D TRANSISTOR T3 -203-AB 072809-A 1.35 1.25 1.15 Figure 37. 6-Lead Thin Shrink Small Outline Transistor Package [SC70 , -6 KS-6 KS-6 Branding D93 D92 D92 D94 D9D D9D Z = RoHS Compliant Part. The evaluation
Analog Devices
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AD5246 SC70-6 AD5246BKSZ5-RL7 D9D TRANSISTOR T3 d92 02 diode diode d92 02 Philips KS capacitors 128-P MO-203-AB AD5246BKSZ10-R21

D9D TRANSISTOR

Abstract: M61541FP 6 channel independent Electronic Volume with High Voltage Transistor. (0 to ­99dB/1dBstep, ­dB) 6 , 0 0 0 1 0 Slot4 D0d D1d D2d D3d D4d D5d D6d D7d D8d D9d D10d D11d D12d D13d D14d , SRch D0d D9d D1d D10d 0dB 6dB 0 0 0 1 12dB 18dB 1 1 0 1 ATT Setting
Renesas Technology
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M61541FP P-LQFP40-7x7-0 D17D 1402E BEST BASS TREBLE CIRCUIT 1D-14a REJ03F0122-0100

D9D TRANSISTOR

Abstract: M61540FP Volume · · · · 6 channel independent Electronic Volume with High Voltage Transistor. (0 to ­99dB , ) SWch Volume 0 0 0 0 1 D23 0 Slot4 D0d D1d D2d D3d D4d D5d D6d D7d D8d D9d D10d , D0c D9c D1c D10c SLch SRch D0d D9d D1d D10d 0dB 6dB 0 0 0 1 12dB 18dB
Renesas Technology
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M61540FP d11c diode D14D diode d15c REJ03F0117-0100Z D-85622

D9D TRANSISTOR

Abstract: BEST BASS TREBLE CIRCUIT Preliminary M61531FP 6ch Electronic Volume with 10 Input Selectors REJ03F0050-0110Z Rev.1.1 Jun.01.2004 Features Functions Features Electric volume 6 channel independent electric volume with high voltage transistor (0 to ­99 dB/1 dB step, ­ dB) Input selector L/R channel 10 , 0 0 0 0 1 1 D0d D1d D2d D3d D4d D5d D6d D7d D8d D9d D10d D11d D12d D13d D14d D15d , D18a Setting D9d D10d Setting D11d Mute off Depend 0 0 dB 0 0 Bypass
Renesas Technology
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capacitor 4.7u D19c D15C D19D

D15D

Abstract: cross reference D4D channel independent Electronic Volume with High Voltage Transistor. (0 to ­99dB/1dBstep, ­dB) 6 channel , Slot4 D0d D1d D2d D3d D4d D5d D6d D7d D8d D9d D10d D11d D12d D13d D14d D15d D16d D17d D18d D19d D20d , Control Lch Rch D0b D9b D1b D10b Cch SWch D0c D9c D1c D10c SLch SRch D0d D9d
Renesas Technology
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D15D cross reference D4D diode d15d

transistor D9C

Abstract: D9C transistor M61531FP 6ch Electronic Volume with 10 Input Selectors REJ03F0050-0100Z Preliminary Rev.1.0 Sep.17.2003 Features Functions Electric volume Input selector Multi channel input Tone Control Features 6 channel independent electric volume with high voltage transistor (0 to ­99 dB/1 dB step, ­ dB) L/R channel 10 input , D5d D6d D7d D8d D9d D10d D11d D12d D13d D14d D15d D16d D17d D18d D19d D20d D21d D22 D23 Slot3 , ­6 dB ­12 dB ­18 dB D9d 0 0 1 1 D10d 0 1 0 1 (13)Bypass/Tone Setting Bypass Tone D11d 0 1 Note
Renesas Technology
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transistor D9C D9C transistor inr234

D9D TRANSISTOR

Abstract: AD5246 STANDARDS MO-203-AB Figure 37. 6-Lead Thin Shrink Small Outline Transistor Package [SC70] (KS , D16 D93 D1D D1D D92 D1C D1C D94 D1A D1A D9D D9D Z = Pb-free part. The evaluation board
Analog Devices
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AD5246BKS10-R2 AD5246BKS5-R2 AD5246BKS5-RL7 FDV301N OP27 0-RL71 AD5246BKS50-R2 AD5246BKS50-RL7 AD5246BKSZ50-RL71 AD5246BKS100-R2 AD5246BKS100-RL7

D9D TRANSISTOR

Abstract: M61540FP 6 channel independent Electronic Volume with High Voltage Transistor. (0 to ­99dB/1dBstep, ­dB) 6 , ) SWch Volume 0 0 0 0 1 D23 0 Slot4 D0d D1d D2d D3d D4d D5d D6d D7d D8d D9d D10d , D0c D9c D1c D10c SLch SRch D0d D9d D1d D10d 0dB 6dB 0 0 0 1 12dB 18dB
Renesas Technology
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D21B d18c ssi d2d D15A D13b D21c

D9D TRANSISTOR

Abstract: AD5246BKSZ50-RL7 COMPLIANT TO JEDEC STANDARDS MO-203-AB Figure 36. 6-Lead Thin Shrink Small Outline Transistor Package , D92 D92 D94 D9D D9D Z = RoHS Compliant Part. The evaluation board is shipped with the 10 k RAB
Analog Devices
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AD5246BKSZ50-RL7 AD5246BKSZ10-R2 AD5246BKSZ10-RL7 AD5246BKSZ100-R2 AD5246BKSZ100-RL7 EVAL-AD5246DBZ
Abstract: independent Electronic Volume with High Voltage Transistor. (0 to â'"99dB/1dBstep, â'"âždB) 6 channel , ) SWch Volume 0 0 0 0 1 D23 0 Slot4 D0d D1d D2d D3d D4d D5d D6d D7d D8d D9d D10d , D1b D10b Cch SWch D0c D9c D1c D10c SLch SRch D0d D9d D1d D10d 0dB 6dB Renesas Electronics
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Abstract: Transistor Package [SC70] (KS-6) Dimensions shown in millimeters ORDERING GUIDE Model 1, 2 , Evaluation Board Package Option KS-6 KS-6 KS-6 KS-6 KS-6 KS-6 Branding D93 D92 D92 D94 D9D D9D Z = RoHS Compliant Part. The evaluation board is shipped with the 10 kâ"¦ RAB resistor option Analog Devices
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D03875
Abstract: independent Electronic Volume with High Voltage Transistor. (0 to â'"99dB/1dBstep, â'"âždB) 6 channel , ) SWch Volume 0 0 0 0 1 D23 0 Slot4 D0d D1d D2d D3d D4d D5d D6d D7d D8d D9d D10d , D1b D10b Cch SWch D0c D9c D1c D10c SLch SRch D0d D9d D1d D10d 0dB 6dB Renesas Technology
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Abstract: with High Voltage Transistor. (0 to â'"99dB/1dBstep, â'"âždB) 6 channel independent Gain Control (0 , 0 0 0 1 0 Slot4 D0d D1d D2d D3d D4d D5d D6d D7d D8d D9d D10d D11d D12d D13d D14d , D0c D9c D1c D10c SLch SRch D0d D9d D1d D10d 0dB 6dB 0 0 0 1 12dB 18dB Renesas Electronics
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Abstract: with High Voltage Transistor. (0 to â'"99dB/1dBstep, â'"âždB) 6 channel independent Gain Control (0 , 0 0 0 1 0 Slot4 D0d D1d D2d D3d D4d D5d D6d D7d D8d D9d D10d D11d D12d D13d D14d , D0c D9c D1c D10c SLch SRch D0d D9d D1d D10d 0dB 6dB 0 0 0 1 12dB 18dB Renesas Technology
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M61532

Abstract: M61532FP M61532FP 8ch Electronic Volume with 9 Input Selector REJ03F0041-0100Z Rev.1.0 Sep.19.2003 Feature FUNCTION FEATURE Electric Volume 8channel independent Electric Volume with High Voltage Transistor. (0~-99.0dB/0.5dBstep,-dB) Twin Input Selector Front L/R channel has twin 9 Input Selector.(Main & Sub) Multi Channel Input Selector Input Gain Control Every channel has 2 Input Selector , D9b D1c D9c D1d D9d D1e D9e 0 0 0 0 0 0 0 0 0 0 0 0 0 D2b D10b D2c D10c D2d
Renesas Technology
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M61532 SR587 QFP80-P-1420-0
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