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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

D600k transistor

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transistor D600k

Abstract: transistor d600 Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity , Collector-to-Base Voltage Symbol Conditions 2SB631, D600 2SB631K, D600K Unit Collector-to-Emitter , )100 V B631K, D600K V(BR)CEO IC=(­)1mA, RBE= (­)100 B631K, D600K Collector-to-Emitter
SANYO Electric
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transistor D600k transistor d600 transistor b631 D600k transistor transistor B631K b631 transistor 2009B

transistor D600k

Abstract: transistor d600 Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions · High , °C Parameter Symbol Conditions 2SB631, D600 2SB631K, D600K Unit Collector-to-Base Voltage , Current Unit B631, D600 (­)100 V B631K, D600K (­)120 V B631, D600 (­)100 V B631K, D600K (­)120 V VEB=(­)4V, IC=0 Collector Cutoff Current max (­)5 V VCB=(­
SANYO Electric
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k b631k 2sb631 transistor 2sd600 TO-126 D600 631k D600

2sb631 transistor

Abstract: transistor b631 Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions · High , šC Parameter Symbol Conditions 2SB631, D600 2SB631K, D600K Unit Collector-to-Base Voltage , Current Unit B631, D600 (â'")100 B631K, D600K (â'")120 V V B631, D600 (â'")100 V B631K, D600K (â'")120 V VCB=(â'")50V, IE=0 Collector Cutoff Current max (â
SANYO Electric
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