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TH3A225K010D4600 Vishay Sprague CAPACITOR, TANTALUM, SOLID, POLARIZED, 10 V, 2.2 uF, SURFACE MOUNT, 1206, CHIP, ROHS COMPLIANT visit Digikey Buy
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LTD-4608JS Lite-On Semiconductor Corporation Smart/Normal 7 Seg Numeric LED Display, 2-Character, Yellow, 10mm visit Digikey Buy
DW-41-09-F-D-460 Samtec Inc Board Stacking Connector, 82 Contact(s), 2 Row(s), Male, Straight, Solder Terminal, visit Digikey Buy
LTD-4608JR Lite-On Semiconductor Corporation Smart/Normal 7 Seg Numeric LED Display, 2-Character, Super Red, 10mm visit Digikey Buy

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D460

Catalog Datasheet MFG & Type PDF Document Tags

D460

Abstract: Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-460 , voltage V GS(th)=f(T j); V GS=V DS; I D=-460 µA 500 3 400 98 % 2.5 2 max. R DS(on
Infineon Technologies
Original
D460 BSP171P PG-SOT223 L6327
Abstract: ) V DS=V GS, I D=-460 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS , V GS(th)=f(T j); V GS=V DS; I D=-460 µA 3 500 2.5 400 98 % 300 -V GS(th) [V Infineon Technologies
Original
IEC61249 H6327 JESD22-A114-HBM

D19D19

Abstract: BSP171P GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-460 µA V DS=-60 V, V GS=0 V, T j=25 °C V DS=-60 V, V GS , ; I D=-460 µA 500 3 400 98 % 2.5 2 max. R DS(on) [m ] -V GS(th) [V] 300
Infineon Technologies
Original
D19D19

DS48

Abstract: voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-460 µA V DS=-60 V, V GS=0 V, T j=25 °C V , )=f(T j); V GS=V DS; I D=-460 µA 500 3 400 98 % 2.5 2 max. R DS(on) [m ] -V
Infineon Technologies
Original
DS48 IEC61249221

sot-223 body marking D K Q F

Abstract: BSP171P threshold voltage V GS(th) V DS=V GS, I D=-460 µA -1 -1.5 -2 Zero gate voltage drain , V GS(th)=f(T j); V GS=V DS; I D=-460 µA 3 500 2.5 400 98 % 300 -V GS(th) [V] R
Infineon Technologies
Original
sot-223 body marking D K Q F PG-SOT-223

D460

Abstract: 1. Mechanical Dimensions: 0.880 Max 0.500±0.020 00.024+0.006 D.460 Max X X ~n ~n S IS) in O cr> i -< I < o B 0.420 ±0.020 Nates: 1. Solderabflltyi Leads shall meet MIL-STD-202. Method 208D for salderablirty. 2. FlDmmnbllity: UL94V-0 3. ASTM axyqen Index: > 2B% 4-. Temperature ratfngi 1 55"C. UL file El 51556 5. Operating Temperature Ranges â'"4D'C to 4-85*C 6. The tinned length is the same ds the lend length. 2. Schematic: o- o- 3. Electrical Specifications: Inductance
-
OCR Scan
1XF2706-V0

BSP171P

Abstract: BSP171 - Gate threshold voltage V GS(th) V DS=V GS, I D=-460 µA -1 -1.5 -2 Zero gate , V GS(th)=f(T j); V GS=V DS; I D=-460 µA 3 500 2.5 400 98 % 300 -V GS(th) [V] R
Infineon Technologies
Original
Q67041-S4019 BSP171

BSP171

Abstract: TRANSISTOR C 460 threshold voltage V GS(th) V DS=V GS, I D=-460 µA -1 -1.5 -2 Zero gate voltage drain , V GS(th)=f(T j); V GS=V DS; I D=-460 µA 3 500 2.5 400 98 % 300 -V GS(th) [V] R
Infineon Technologies
Original
TRANSISTOR C 460 sot-223 body marking A G Q E
Abstract: GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-460 µA V DS=-60 V, V GS=0 V, T j=25 °C V DS=-60 V, V GS , ; I D=-460 µA 500 3 400 98 % 2.5 2 max. R DS(on) [m ] -V GS(th) [V] 300 Infineon Technologies
Original

HVD9100

Abstract: ON / OFF, Front Control Key SNMP, Web GUI W432 x D460 x H44 (mm) 6kg AC 100 - 240V, 50Hz / 60Hz
NTT Electronics
Original
HVD9100 HVE9100S HVD9100S SMPTE302M SMPTE334M 28-D/D12-04-03
Abstract: , Web GUI W432 x D460 x H44 (mm) (excluding protrusions) 6kg AC 100 - 240V, 50Hz / 60Hz 70W In NTT Electronics
Original
XVE9300 HV9100 SMPTE125M SMPTE425 TR-B22 E296M
Abstract: Control Key SNMP, Web-GUI W432 x D460 x H44 (mm) 6kg AC 100 - 240V, 50Hz / 60Hz 60W This products is NTT Electronics
Original
HVE9200 SMPTE296M SMPTE299 B22/B23 31-D/D12-04-01

A940

Abstract: b950 D340 D350 D360 D370 D3A0 D3B0 D3C0 D3D0 D3E0 D3F0 D440 D450 D460 D470 D4A0 D4B0 D4C0
Sitronix
Original
ST7920 A940 b950 A950 ba40 A970
Abstract: ) Fig.8 -Undamped Inductive Test Circuit D-460 -
OCR Scan
TJ-125 401CNQ 244AB D-457 401CNQ035 401CNQ040

NEC D288

Abstract: d1397 .4 4.497 121.5 .050 51.2 .505 ð46.0 4.5 .913 ð59.9 4.429 114.6 .055 , .421 153.4 3.523 ð46.0 .097 ð43.9 .399 140.8 17.5 .399 143.1 3.537
NEC
Original
NEC D288 d1397 D331 transistor transistor d288 nec d1594 D78 NEC NE32984D NE32984D-T1 NE32984D-T1A NE32984D-SL

D458

Abstract: D457 ) D-460
-
OCR Scan
D458 D457 d459 401CNQ045 D-458 D-459

D478

Abstract: D446 D458 D459 D460 D461 D462 D463 D464 D465 D466 D467 D468 D469 D470 D471 D472 D473 D474 D475 D476 D477 , 0 0 1 0 D361 D362 D457 D458 D459 D460 D461 D462 D463 D464 D465 D466 D467 D468 D469 , D380 D388 D396 D404 D412 D420 D428 D436 D444 D452 D460 D468 D476 D484 D492 D500 D508 D516 D524 D532 , D451 D460 D469 D478 D487 D496 D505 D514 D523 D532 D541 D550 D559 D568 D577 D586 D595 D604 D613 D622 , D719 D729 COM10 D460 D470 D480 D490 D500 D510 D520 D530 D540 D550 D560 D570 D580 D590 D600 D610 D620
ON Semiconductor
Original
D478 D446 Met d248 D480 D636 R D482 EN6473A LC75878W

D478

Abstract: D446 D361 D362 D457 D458 D459 D460 D461 D462 D463 D464 D465 D466 D467 D468 D469 D470 D471 D472 D473 D474 , D460 D461 D462 D463 D464 D465 D466 D467 D468 D469 D470 D471 D472 D473 D474 D475 D476 D477 D478 D479 , D459 D460 D461 D462 D463 D464 S59 D465 D466 D467 D468 D469 D470 , D453 D454 D455 D456 D457 D458 D459 S52 D460 D461 D462 D463 D464 , D454 D455 D456 D457 D458 D459 D460 S47 D461 D462 D463 D464 D465
-
Original
D-436 D472 D436 D434 D526 D452

d478

Abstract: D636 R D457 D458 D459 D460 D461 D462 D463 D464 D465 D466 D467 D468 D469 D470 D471 D472 D473 D474 D475 D476 , D458 D459 D460 D461 D462 D463 D464 D465 D466 D467 D468 D469 D470 D471 D472 D473 D474 D475 D476 D477 , D459 D460 D461 D462 D463 D464 S59 D465 D466 D467 D468 D469 D470 , D453 D454 D455 D456 D457 D458 D459 S52 D460 D461 D462 D463 D464 , D460 S47 D461 D462 D463 D464 D465 D466 D467 D468 D469 D470 S48
-
Original
D476 D669 k d718 D768 D882, D772 d772 LC75848T O2506 B8-6221 S1S95 COM1COM10 VLCD44
Abstract: #29;#27;0#27;=2DD0C3D4039#27;C0>@56= TDK-Lambda
Original
N0D0062C0 5F4E6502 2E650 6DE020 62DFC6

hitachi mosfet audio

Abstract: D4L DIODE Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-460 , voltage V GS(th)=f(T j); V GS=V DS; I D=-460 µA 500 3 400 98 % 2.5 2 max. R DS(on
Hitachi Semiconductor
Original
hitachi mosfet audio D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 6AM11 4AK23 4AM14 4AM15 6AM12 6AM13

osram transistor Electronic ballast

Abstract: schiederwerk ) V DS=V GS, I D=-460 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS , V GS(th)=f(T j); V GS=V DS; I D=-460 µA 3 500 2.5 400 98 % 300 -V GS(th) [V
OSRAM
Original
osram transistor Electronic ballast schiederwerk ECG book electronic ballast MITRONIC mitronic ignitor schiederwerk pvg 5

Gems

Abstract: schiederwerk GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-460 µA V DS=-60 V, V GS=0 V, T j=25 °C V DS=-60 V, V GS , ; I D=-460 µA 500 3 400 98 % 2.5 2 max. R DS(on) [m ] -V GS(th) [V] 300
OSRAM
Original
Gems SFc-10-4 OSRAM hti SFC104

UR460

Abstract: TA49035 voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-460 µA V DS=-60 V, V GS=0 V, T j=25 °C V , )=f(T j); V GS=V DS; I D=-460 µA 500 3 400 98 % 2.5 2 max. R DS(on) [m ] -V
-
OCR Scan
TA49035 UR460 D440S RUR450 RURD440 RURD450 RURD460 RURD440S RURD450S RURD460S

r460

Abstract: RH 76 21 35 W 1. Mechanical Dimensions: 0.880 Max 0.500±0.020 00.024+0.006 D.460 Max X X ~n ~n S IS) in O cr> i -< I < o B 0.420 ±0.020 Nates: 1. Solderabflltyi Leads shall meet MIL-STD-202. Method 208D for salderablirty. 2. FlDmmnbllity: UL94V-0 3. ASTM axyqen Index: > 2B% 4-. Temperature ratfngi 1 55"C. UL file El 51556 5. Operating Temperature Ranges â'"4D'C to 4-85*C 6. The tinned length is the same ds the lend length. 2. Schematic: o- o- 3. Electrical Specifications: Inductance
-
OCR Scan
r460 RH 76 21 35 W RHRD44 RHRD450S RHRD460S RHRD440 RHRD450 RHRD460
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