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D2012 Datasheet

Part Manufacturer Description PDF Type
D2012 N/A Si NPN TRANSISTOR Original
D2012UK Semelab Metal Gate RF Silicon FET Original
D2012UK Semelab GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED Original
D2012UK N/A Shortform Datasheet & Cross References Data Scan

D2012

Catalog Datasheet MFG & Type PDF Document Tags

D2012

Abstract: D3512 7.6 9.7 9.5 1.5 S1365 222002B 60 20.5 21.85 24 2.41 D2012 222102B 60 21.5 24.8 14.5 1.29 D2012 222103B 60 21.5 24.8 14.5 1.29 D2012 , D2012 222051B 62.5 20.6 23.7 14.8 1.24 S1365 203207B 63.29 3.85 5 21.9 2.99 D3512 222101B 63.5 21.94 24.22 23 1.7 D2012 205207B 64 25.2 29 18 1.22 S1365 203217B 65 19.45 21.23 22 2.1 D2012 203221B
-
Original
203902b 202552B d2512 d2012 81 S2098 202545 203901B 203902B 203918B 203919B S1038 203909B

D2012

Abstract: transistor d2012 ) 5.5max 6.0max Package : D2012 Pin Configuration 1 Dimensions shown are nominal in millimeters , REF 3.1 us MI115A A1 2-8 D2012 M6S 3 CH2 Markers BW : 4. 262109 MHz : 114 . 980085 , 115 . 000 000 MHz REF -26.82 dB MI115A A1 MI115A A1 2-8 D2012 M6S 3 CH2 Markers BW , 115 . 000 000 MHz REF 0 REF 0 START CH1 CH3 MI115A A1 2-8 D2012 M6S 3 S11 S22 . , 2-8 D2012 M6S 3 Cor Cor Cor Cor 2 1 1 2 CENTER 115 . 000 000 MHz SPAN 15
Integrated Technology Future
Original
transistor d2012 T D2012 transistor equivalent d2012 d2012 transistor transistor d2012 specification transistor d2012 T D2012 D2012 203627B 04A001 DS4024-CS02

b1375

Abstract: 2sk270a 2SC2235 2SC2235 2SD526, D1408 2SC3421 2SC3421 2SC3421 2SC2073 2SC2073 2SD880, D2012 2SD526, D1408 2SD880, D2012 2SD526, D1408 2SD880, D2012 2SD526, D1408 2SD880, D2012 2SD526, D1408 2SD880. D2012 2SD526, D1408 2SD880, D2012 2SD526, D1408 2SC3419 2SC3419 2SC3419 2SC3419 2SC2235 2SC2235 2SC2229 2SC2229 2SC3419 , 2SD880, D2012 2SD880, D2012 2SD867 2SD867 2SD716 2SD553, D1412 2SD1148 2SD1148 2SD718 2SD718 2SD634
-
OCR Scan
2SA1015 MG15G1AL2 S-AU15 b1375 2sk270a 2SK150A 2SA1051b MG50G2CL1 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790

Transistor D2010

Abstract: transistor d2012 8+8 9+9 12+12 15+15 24+24 D2011 D2012 D2013 D2014 D2015 D2016 115+115 115+115 115+115
Dagnall Electronics
Original
D2006 D2007 D2008 D2009 D2010 Transistor D2010 transistor d2008 transistor D2006 dagnall electronics D2016 EN60950 EN60742 EN61558 UL506 UL94-V0 D2005

transistor d2012

Abstract: d2012 transistor D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR-D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tamb=25) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25 Collector Dissipation PCM Tamb=25 DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg SYMBOL
WuXi YouDa Electronics
Original
TRANSISTOR--D2012

D2012

Abstract: D2012 YOUDA TRANSISTOR SI NPN TRANSISTORâ'"D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tamb=25â"ƒ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25â"ƒ Collector Dissipation PCM Tamb=25â"ƒ DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage
WuXi YouDa Electronics
Original

transistor d2012

Abstract: D2012 D2012 YOUDA TRANSISTOR Si NPN TRANSISTORâ'"D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tamb=25â"ƒ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25â"ƒ Collector Dissipation PCM Tamb=25â"ƒ DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage
WuXi YouDa Electronics
Original

D2012

Abstract: br d2012 D2012 () No. (: : ) 2 2007-06-07 2SD2012 IC ­ VCE hFE ­ IC 1000 3.0
Toshiba
Original
br d2012 2-10R1A 20070701-JA

D2012

Abstract: 271101B SAW Bandpass Filter 271101B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40 ~ 85 Electrostatics Sensitive Device (ESD) 5.5max 6.0max Package : D2012 Pin Configuration 1 Dimensions shown are nominal in millimeters Base : Fe(SPCC), Au plating over Ni plated Cap : Cu & Cr Alloy, Ni Plated Termination : Kovar, Au Plated I T F Co., Ltd. 102-901, Bucheon Technopark 364, Samjeong-Dong, Ojeong-Gu, Bucheon-City
Integrated Technology Future
Original
DS4055-CS01

D2012

Abstract: 990884 SAW Bandpass Filter 201136B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40 ~ 85 Electrostatics Sensitive Device (ESD) Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2 0.45±0.05 5.5max 6.0max ITF 04A001 201136B 20.3±0.5 12.7±0.5 2.5±0.2 2. Package Dimension Pin Configuration 1 Dimensions shown are nominal in millimeters Base : Fe(SPCC), Au plating over Ni plated Cap : Cu & Cr Alloy, Ni Plated
Integrated Technology Future
Original
DS4058-CS01 990884 484dB

1400267

Abstract: 0619 817A SAW Bandpass Filter 254401B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40 ~ 85 Electrostatics Sensitive Device (ESD) 5.5max 6.0max Package : D2012 Pin Configuration 1 Dimensions shown are nominal in millimeters Base : Fe(SPCC), Au plating over Ni plated Cap : Cu & Cr Alloy, Ni Plated Termination : Kovar, Au Plated I T F Co., Ltd. 102-901, Bucheon Technopark 364, Samjeong-Dong, Ojeong-Gu, Bucheon-City
Integrated Technology Future
Original
1400267 0619 817A NM3026-CS03

D2012

Abstract: T D2012 6.0max Matching Schematic 7.6±0.2 2.5±0.2 D2012 Package Dimension 18nH 5 27pF
Integrated Technology Future
Original
263002B 10A001

BR D2012

Abstract: D2012 Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Marking : D2012 Switching Time
SANYO Electric
Original
FTD2012 FET MARKING QG 990702TM2

transistor d2012

Abstract: transistor d2012 specification : 2005.07.29 Revised Date : Page No. : 5/ 5 TO-220FP Dimension Marking: D2012 Style: Pin 1.Base 2
CYStech Electronics
Original
BTD2012FP C822FP UL94V-0

10840

Abstract: D2012 SAW Bandpass Filter 202142B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40 ~ 85 Electrostatics Sensitive Device (ESD) 5.5max 6.0max Package : D2012 Pin Configuration 1 Dimensions shown are nominal in millimeters Base : Fe(SPCC), Au plating over Ni plated Cap : Cu & Cr Alloy, Ni Plated Termination : Kovar, Au Plated I T F Co., Ltd. 102-901, Bucheon Technopark 364, Samjeong-Dong, Ojeong-Gu, Bucheon-City
Integrated Technology Future
Original
10840 NI1012-CS03

nm3001

Abstract: D2012 SAW Bandpass Filter 201143B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40 ~ 85 Electrostatics Sensitive Device (ESD) 5.5max 6.0max Package : D2012 Pin Configuration 1 Dimensions shown are nominal in millimeters Base : Fe(SPCC), Au plating over Ni plated Cap : Cu & Cr Alloy, Ni Plated Termination : Kovar, Au Plated I T F Co., Ltd. 102-901, Bucheon Technopark 364, Samjeong-Dong, Ojeong-Gu, Bucheon-City
Integrated Technology Future
Original
nm3001 9746 NM3001-CS02

schematic of 7483

Abstract: 202157B SAW Bandpass Filter 202157B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40 ~ 85 Electrostatics Sensitive Device (ESD) 5.5max 6.0max Package : D2012 Pin Configuration 1 Dimensions shown are nominal in millimeters Base : Fe(SPCC), Au plating over Ni plated Cap : Cu & Cr Alloy, Ni Plated Termination : Kovar, Au Plated I T F Co., Ltd. 102-901, Bucheon Technopark 364, Samjeong-Dong, Ojeong-Gu, Bucheon-City
Integrated Technology Future
Original
schematic of 7483 NM3023-CS01

NM6034-CS01

Abstract: D2012 SAW Bandpass Filter 253005B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40 ~ 85 Electrostatics Sensitive Device (ESD) 5.5max 6.0max Package : D2012 Pin Configuration 1 Dimensions shown are nominal in millimeters Base : Fe(SPCC), Au plating over Ni plated Cap : Cu & Cr Alloy, Ni Plated Termination : Kovar, Au Plated I T F Co., Ltd. 102-901, Bucheon Technopark 364, Samjeong-Dong, Ojeong-Gu, Bucheon-City
Integrated Technology Future
Original
NM6034-CS01 NM603 06A001

D2012

Abstract: transistor d2012 5.5max 6.0max Matching Schematic 7.6±0.2 2.5±0.2 D2012 Package Dimension 33nH 1 5
Integrated Technology Future
Original
251602B

br d2012

Abstract: D2012 D2012 () No. 2 2: No. : [[Pb]]/INCLUDES > MCV : [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb
Toshiba
Original
2002/95/EC
Abstract: 2SC2235 2SC2235 2SD526, D1408 2SC3421 2SC3421 2SC3421 2SC2073 2SC2073 2SD880, D2012 2SD526, D1408 2SD880, D2012 2SD526, D1408 2SD880, D2012 2SD526, D1408 2SD880, D2012 2SD526, D1408 2SD880. D2012 2SD526, D1408 2SD880, D2012 2SD526, D1408 2SC3419 2SC3419 2SC3419 2SC3419 2SC2235 2SC2235 2SC2229 2SC2229 2SC3419 , 2SD880, D2012 2SD880, D2012 2SD867 2SD867 2SD716 2SD553, D1412 2SD1148 2SD1148 2SD718 2SD718 2SD634 -
OCR Scan
EM-90858-0011 80REF PS-99020-0037 90B33 IPG2013-03AA X310W
Abstract: ) 5.5max 6.0max Package : D2012 Pin Configuration 1 Dimensions shown are nominal in millimeters , REF 3.1 us MI115A A1 2-8 D2012 M6S 3 CH2 Markers BW : 4. 262109 MHz : 114 . 980085 , 115 . 000 000 MHz REF -26.82 dB MI115A A1 MI115A A1 2-8 D2012 M6S 3 CH2 Markers BW , 115 . 000 000 MHz REF 0 REF 0 START CH1 CH3 MI115A A1 2-8 D2012 M6S 3 S11 S22 . , 2-8 D2012 M6S 3 Cor Cor Cor Cor 2 1 1 2 CENTER 115 . 000 000 MHz SPAN 15 -
OCR Scan
E2009-0131 200B/09/15 SD-90858-001

3182N

Abstract: 2sd4242 8+8 9+9 12+12 15+15 24+24 D2011 D2012 D2013 D2014 D2015 D2016 115+115 115+115 115+115
-
OCR Scan
3182N 2sd4242 1S1658 2482S 2sc 1091 A1015 2SC387A 2SC1815 2SC2347 2SC780A 2SC2101 2SC2181
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